Биполярный транзистор 2SC3435 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC3435
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 120 W
Макcимально допустимое напряжение коллектор-база (Ucb): 500 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V
Макcимальный постоянный ток коллектора (Ic): 15 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 30
Корпус транзистора: MP80
2SC3435 Datasheet (PDF)
2sc3437.pdf
2SC3437 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3437 Ultra High Speed Switching Applications Unit: mm Computer, Counter Applications High transition frequency: fT = 400 MHz (typ.) Low saturation voltage: V = 0.3 V (max) CE (sat) High speed switching time: t = 15 ns (typ.) stgMaximum Ratings (Ta == 25C) ==Characteristics Symbol R
2sc3438.pdf
ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
2sc3439.pdf
ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
2sc3437.pdf
2 3437SC TRANSISTOR (NPN)SOT23 FEATURES High Transition Frequency Low Saturation Voltage 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR V Collector-Base Voltage 40 V CBOVCEO Collector-Emitter Voltage 15 V V Emitter-Base Voltage 5 V EBOI Collector Current 200 mA CP Collector Power Diss
2sc3437.pdf
SMD Type TransistorsNPN Transistors2SC3437SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features Collector Current Capability IC=200mA1 2 Collector Emitter Voltage VCEO=15V+0.1+0.050.95 -0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collec
2sc3438.pdf
SMD Type TransistorsNPN Transistors2SC34381.70 0.1 Features High Voltage VCEO = 100V High Collector Current (ICM = 800mA) High Collector Dissipation PC = 500mW Small Package For Mounting0.42 0.10.46 0.1 Complementary to 2SA13681.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Vo
2sc3439.pdf
SMD Type TransistorsNPN Transistors2SC34391.70 0.1 Features High hFE : hFE=400 to 1800 High collector current Low collector to emitter saturation voltage0.42 0.10.46 0.1 High collector dissipation Pc=500mW Small package for mounting1.Base Complementary to 2SA13692.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symb
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050