2SC3455 - описание и поиск аналогов

Ordering number EN1577B NPN Triple Diffused Planar Silicon Transistor 2SC3451 500V/15A Switching Regulator Applications Features Package Dimensions High breakdown voltage and high reliability. unit mm Fast switching speed (tf 0.1 s typ). 2022A Wide ASO. [2SC3451] Adoption of MBIT process. 1 Base 2 Collector 3 Emitter SANYO TO-3PB Specifications Absol

Ordering number EN1579D NPN Triple Diffused Planar Silicon Transistor 2SC3456 800V/1.5A Switching Regulator Applications Features Package Dimensions High breakdown voltage and high reliability. unit mm Fast switching speed (tf 0.1 s typ). 2010C Wide ASO. [2SC3456] Adoption of MBIT process. 1 Base JEDEC TO-220AB 2 Collector EIAJ SC-46 3 Emitter Spec

Ordering number EN1576C NPN Triple Diffused Planar Silicon Transistor 2SC3450 500V/10A Switching Regulator Applications Features Package Dimensions High breakdown voltage and high reliability. unit mm Fast switching speed (tf 0.1 s typ). 2022A Wide ASO. [2SC3450] Adoption of MBIT process. 1 Base 2 Collector 3 Emitter SANYO TO-3PB Specifications Absol

Ordering number EN1589C NPN Triple Diffused Planar Type Silicon Transistor 2SC3458 800V/3A Switching Regulator Applications Features Package Dimensions High breakdown voltage and high reliability. unit mm Fast switching speed (tf 0.1 s typ). 2022A Wide ASO. [2SC3458] Adoption of MBIT process. 1 Base 2 Collector 3 Emitter SANYO TO-3PB Specifications A

Ordering number EN1591C NPN Triple Diffused Planar Silicon Transistor 2SC3459 800V/4.5A Switching Regulator Applications Features Package Dimensions High breakdown voltage and high reliability. unit mm Fast switching speed (tf 0.1 s typ). 2022A Wide ASO. [2SC3459] Adoption of MBIT process. 1 Base 2 Collector 3 Emitter SANYO TO-3PB Specifications Abso

Ordering number EN1580C NPN Triple Diffused Planar Type Silicon Transistor 2SC3457 800V/3A Switching Regulator Applications Features Package Dimensions High breakdown voltage and high reliability. unit mm Fast switching speed (tf 0.1 s typ). 2010C Wide ASO. [2SC3457] Adoption of MBIT process. 1 Base JEDEC TO-220AB 2 Collector EIAJ SC-46 3 Emitter S

JMnic Product Specification Silicon NPN Power Transistors 2SC3451 DESCRIPTION With TO-3PN package High breakdown voltage and high reliability. Fast switching speed Wide area of safe operation APPLICATIONS 500V/15A Switching Regulator Applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and sym

JMnic Product Specification Silicon NPN Power Transistors 2SC3456 DESCRIPTION With TO-220C package High breakdown voltage and high reliability Fast switching speed. Wide ASO area of safe operation APPLICATIONS 800V/1.5A switching regulator applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum

JMnic Product Specification Silicon NPN Power Transistors 2SC3458 DESCRIPTION With TO-3PN package High breakdown voltage and high reliability. Fast switching speed Wide ASO(Safe Operating Area) APPLICATIONS 800V/3A Switching Regulator Applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and sy

JMnic Product Specification Silicon NPN Power Transistors 2SC3457 DESCRIPTION With TO-220C package High breakdown voltage and high reliability Fast switching speed. Wide ASO (Safe Operating Area) APPLICATIONS 800V/3A switching regulator applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(

isc Silicon NPN Power Transistor 2SC3451 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 500V(Min) (BR)CEO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO

isc Silicon NPN Power Transistor 2SC3456 DESCRIPTION High Breakdown Voltage- V = 1100V(Min) (BR)CBO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Bas

isc Silicon NPN Power Transistor 2SC3450 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 500V(Min) (BR)CEO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO

isc Silicon NPN Power Transistor 2SC3458 DESCRIPTION High Breakdown Voltage- V = 1100V(Min) (BR)CBO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Bas

isc Silicon NPN Power Transistor 2SC3459 DESCRIPTION High Breakdown Voltage- V = 1100V(Min) (BR)CBO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Bas

isc Silicon NPN Power Transistor 2SC3457 DESCRIPTION High Breakdown Voltage- V = 1100V(Min) (BR)CBO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Bas