Биполярный транзистор 2SC3457 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC3457
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 50 W
Макcимально допустимое напряжение коллектор-база (Ucb): 1100 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 800 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 3 A
Предельная температура PN-перехода (Tj): 125 °C
Граничная частота коэффициента передачи тока (ft): 15 MHz
Ёмкость коллекторного перехода (Cc): 60 pf
Статический коэффициент передачи тока (hfe): 10
Корпус транзистора: TO220
2SC3457 Datasheet (PDF)
2sc3457.pdf
Ordering number:EN1580CNPN Triple Diffused Planar Type Silicon Transistor2SC3457800V/3A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage and high reliability.unit:mm Fast switching speed (tf : 0.1 s typ).2010C Wide ASO.[2SC3457] Adoption of MBIT process.1 : BaseJEDEC : TO-220AB2 : CollectorEIAJ : SC-463 : EmitterS
2sc3457.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3457 DESCRIPTION With TO-220C package High breakdown voltage and high reliability Fast switching speed. Wide ASO (Safe Operating Area) APPLICATIONS 800V/3A switching regulator applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(
2sc3457.pdf
isc Silicon NPN Power Transistor 2SC3457DESCRIPTIONHigh Breakdown Voltage-: V = 1100V(Min)(BR)CBOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator ApplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Bas
2sc3451.pdf
Ordering number:EN1577BNPN Triple Diffused Planar Silicon Transistor2SC3451500V/15A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage and high reliability.unit:mm Fast switching speed (tf : 0.1 s typ).2022A Wide ASO.[2SC3451] Adoption of MBIT process.1 : Base2 : Collector3 : EmitterSANYO : TO-3PBSpecificationsAbsol
2sc3456.pdf
Ordering number:EN1579DNPN Triple Diffused Planar Silicon Transistor2SC3456800V/1.5A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage and high reliability.unit:mm Fast switching speed (tf : 0.1 s typ).2010C Wide ASO.[2SC3456] Adoption of MBIT process.1 : BaseJEDEC : TO-220AB2 : CollectorEIAJ : SC-463 : EmitterSpec
2sc3450.pdf
Ordering number:EN1576CNPN Triple Diffused Planar Silicon Transistor2SC3450500V/10A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage and high reliability.unit:mm Fast switching speed (tf : 0.1 s typ).2022A Wide ASO.[2SC3450] Adoption of MBIT process.1 : Base2 : Collector3 : EmitterSANYO : TO-3PBSpecificationsAbsol
2sc3458.pdf
Ordering number:EN1589CNPN Triple Diffused Planar Type Silicon Transistor2SC3458800V/3A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage and high reliability.unit:mm Fast switching speed (tf : 0.1 s typ).2022A Wide ASO.[2SC3458] Adoption of MBIT process.1 : Base2 : Collector3 : EmitterSANYO : TO-3PBSpecificationsA
2sc3459.pdf
Ordering number:EN1591CNPN Triple Diffused Planar Silicon Transistor2SC3459800V/4.5A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage and high reliability.unit:mm Fast switching speed (tf : 0.1 s typ).2022A Wide ASO.[2SC3459] Adoption of MBIT process.1 : Base2 : Collector3 : EmitterSANYO : TO-3PBSpecificationsAbso
2sc3451.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3451 DESCRIPTION With TO-3PN package High breakdown voltage and high reliability. Fast switching speed Wide area of safe operation APPLICATIONS 500V/15A Switching Regulator Applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and sym
2sc3456.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3456 DESCRIPTION With TO-220C package High breakdown voltage and high reliability Fast switching speed. Wide ASOarea of safe operation APPLICATIONS 800V/1.5A switching regulator applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum
2sc3458.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3458 DESCRIPTION With TO-3PN package High breakdown voltage and high reliability. Fast switching speed Wide ASO(Safe Operating Area) APPLICATIONS 800V/3A Switching Regulator Applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and sy
2sc3451.pdf
isc Silicon NPN Power Transistor 2SC3451DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 500V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO
2sc3456.pdf
isc Silicon NPN Power Transistor 2SC3456DESCRIPTIONHigh Breakdown Voltage-: V = 1100V(Min)(BR)CBOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator ApplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Bas
2sc3450.pdf
isc Silicon NPN Power Transistor 2SC3450DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 500V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO
2sc3458.pdf
isc Silicon NPN Power Transistor 2SC3458DESCRIPTIONHigh Breakdown Voltage-: V = 1100V(Min)(BR)CBOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator ApplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Bas
2sc3459.pdf
isc Silicon NPN Power Transistor 2SC3459DESCRIPTIONHigh Breakdown Voltage-: V = 1100V(Min)(BR)CBOFast Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator ApplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Bas
Другие транзисторы... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050