Биполярный транзистор 2SC3488Y
Даташит. Аналоги
Наименование производителя: 2SC3488Y
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.3
W
Макcимально допустимое напряжение коллектор-база (Ucb): 30
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 25
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V
Макcимальный постоянный ток коллектора (Ic): 0.3
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 300
MHz
Статический коэффициент передачи тока (hfe): 120
Корпус транзистора:
TO92
- подбор биполярного транзистора по параметрам
2SC3488Y
Datasheet (PDF)
8.7. Size:153K jmnic
2sc3486.pdf 

JMnic Product Specification Silicon NPN Power Transistors 2SC3486 DESCRIPTION With TO-3PN package High voltage ,high speed Wide area of safe operation APPLICATIONS For color TV display horizontal output applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximu
8.8. Size:199K inchange semiconductor
2sc3482.pdf 

isc Silicon NPN Power Transistor 2SC3482DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high definition CRT display horizontaldeflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25
8.9. Size:199K inchange semiconductor
2sc3481.pdf 

isc Silicon NPN Power Transistor 2SC3481DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high definition CRT display horizontaldeflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25
8.10. Size:198K inchange semiconductor
2sc3486.pdf 

isc Silicon NPN Power Transistor 2SC3486DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high definition CRT display horizontaldeflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25
8.11. Size:199K inchange semiconductor
2sc3480.pdf 

isc Silicon NPN Power Transistor 2SC3480DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high definition CRT display horizontaldeflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25
Другие транзисторы... 2SA1801
, 2SA1802
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.
History: BFV14
| BC231B
| 2SC1162
| ECG238
| 2SC2947
| 2SC2468
| 2N6076