2SC3489. Аналоги и основные параметры
Наименование производителя: 2SC3489
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 10 W
Макcимально допустимое напряжение коллектор-база (Ucb): 900 V
Макcимальный постоянный ток коллектора (Ic): 0.8 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Статический коэффициент передачи тока (hFE): 70
Корпус транзистора: TO218
Аналоги (замена) для 2SC3489
- подборⓘ биполярного транзистора по параметрам
2SC3489 даташит
8.7. Size:153K jmnic
2sc3486.pdf 
JMnic Product Specification Silicon NPN Power Transistors 2SC3486 DESCRIPTION With TO-3PN package High voltage ,high speed Wide area of safe operation APPLICATIONS For color TV display horizontal output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximu
8.8. Size:199K inchange semiconductor
2sc3482.pdf 
isc Silicon NPN Power Transistor 2SC3482 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high definition CRT display horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25
8.9. Size:199K inchange semiconductor
2sc3481.pdf 
isc Silicon NPN Power Transistor 2SC3481 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high definition CRT display horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25
8.10. Size:198K inchange semiconductor
2sc3486.pdf 
isc Silicon NPN Power Transistor 2SC3486 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high definition CRT display horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25
8.11. Size:199K inchange semiconductor
2sc3480.pdf 
isc Silicon NPN Power Transistor 2SC3480 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high definition CRT display horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25
Другие транзисторы: 2SC3484, 2SC3485, 2SC3486, 2SC3487, 2SC3488, 2SC3488G, 2SC3488O, 2SC3488Y, BD136, 2SC349, 2SC3490, 2SC3491, 2SC3492, 2SC3493, 2SC3494, 2SC3495, 2SC3496
