Справочник транзисторов. 2SC3489

 

Биполярный транзистор 2SC3489 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SC3489
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 10 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 900 V
   Макcимальный постоянный ток коллектора (Ic): 0.8 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 70
   Корпус транзистора: TO218

 Аналоги (замена) для 2SC3489

 

 

2SC3489 Datasheet (PDF)

 8.1. Size:40K  sanyo
2sc3482.pdf

2SC3489

 8.2. Size:131K  sanyo
2sc3481.pdf

2SC3489
2SC3489

 8.3. Size:41K  sanyo
2sc3486.pdf

2SC3489

 8.4. Size:52K  sanyo
2sc3484.pdf

2SC3489

 8.5. Size:37K  sanyo
2sc3483.pdf

2SC3489

 8.6. Size:118K  sanyo
2sc3485.pdf

2SC3489
2SC3489

 8.7. Size:153K  jmnic
2sc3486.pdf

2SC3489
2SC3489

JMnic Product Specification Silicon NPN Power Transistors 2SC3486 DESCRIPTION With TO-3PN package High voltage ,high speed Wide area of safe operation APPLICATIONS For color TV display horizontal output applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximu

 8.8. Size:199K  inchange semiconductor
2sc3482.pdf

2SC3489
2SC3489

isc Silicon NPN Power Transistor 2SC3482DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high definition CRT display horizontaldeflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25

 8.9. Size:199K  inchange semiconductor
2sc3481.pdf

2SC3489
2SC3489

isc Silicon NPN Power Transistor 2SC3481DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high definition CRT display horizontaldeflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25

 8.10. Size:198K  inchange semiconductor
2sc3486.pdf

2SC3489
2SC3489

isc Silicon NPN Power Transistor 2SC3486DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high definition CRT display horizontaldeflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25

 8.11. Size:199K  inchange semiconductor
2sc3480.pdf

2SC3489
2SC3489

isc Silicon NPN Power Transistor 2SC3480DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high definition CRT display horizontaldeflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25

Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
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