Справочник транзисторов. 2SC3535

 

Биполярный транзистор 2SC3535 - описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2SC3535

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 100 W

Макcимально допустимое напряжение коллектор-база (Ucb): 1000 V

Макcимальный постоянный ток коллектора (Ic): 5 A

Предельная температура PN-перехода (Tj): 150 °C

Статический коэффициент передачи тока (hfe): 200

Корпус транзистора: X104

Аналоги (замена) для 2SC3535

 

 

2SC3535 Datasheet (PDF)

5.1. 2sc3588-z.pdf Size:40K _update

2SC3535

SMD Type Transistors NPN Silicon Triple Diffused Transistor 2SC3588-Z TO-252 Unit: mm +0.15 +0.1 6.50-0.15 2.30-0.1 +0.2 +0.8 5.30-0.2 0.50-0.7 Features High voltage VCEO=400V 0.127 +0.1 max 0.80-0.1 +0.1 2.3 0.60-0.1 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO 500 V Collector t

5.2. 2sc3519b.pdf Size:217K _update

2SC3535
2SC3535

RoHS 2SC3519B Series RoHS SEMICONDUCTOR Nell High Power Products Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1386B) 15A/160V, 180V/130W 15.6±0.4 4.8±0.2 9.6 2.0±0.1 Φ3.2±0,1 2 TO-3P(B) 3 +0.2 +0.2 0.65 1.05 -0.1 -0.1 FEATURES 5.45±0.1 5.45±0.1 1.4 Recommend for 105W high Fiderity audio frequency B C E amplifier output stage C Complemen

 5.3. 2sc3528-3pfa.pdf Size:110K _update

2SC3535
2SC3535

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3528 DESCRIPTION ·With TO-3PFa package ·High collector current ·Low saturation voltage APPLICATIONS ·For high voltatge ,high speed power switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector 3 Emitter ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER CONDITIONS V

5.4. 2sc3519b-a.pdf Size:217K _update

2SC3535
2SC3535

RoHS 2SC3519B Series RoHS SEMICONDUCTOR Nell High Power Products Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1386B) 15A/160V, 180V/130W 15.6±0.4 4.8±0.2 9.6 2.0±0.1 Φ3.2±0,1 2 TO-3P(B) 3 +0.2 +0.2 0.65 1.05 -0.1 -0.1 FEATURES 5.45±0.1 5.45±0.1 1.4 Recommend for 105W high Fiderity audio frequency B C E amplifier output stage C Complemen

 5.5. 2sc3502 3da3502.pdf Size:218K _update

2SC3535
2SC3535

2SC3502(3DA3502) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于 CRT 显示器视放输出。 Purpose: Ultrahigh-definition CRT display, video output applications. 特点:击穿电压高,反向传输电容小,高频特性好。 Features: High breakdown voltage, small reverse transfer capacitance and excellent high frequency characteristic. 极限参数/Absolute maxim

5.6. 2sc3547.pdf Size:167K _toshiba

2SC3535
2SC3535



5.7. 2sc3515.pdf Size:225K _toshiba

2SC3535
2SC3535

2SC3515 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC3515 HIGH Voltage Control Applications Unit: mm Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = 300 V, V = 300 V CEO • Low saturation voltage: V = 0.5 V (max) CE (sat) • Small collector output capacitance: C = 3 pF (typ.)

5.8. 2sc3547b.pdf Size:289K _toshiba

2SC3535
2SC3535

2SC3547B TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3547B TV Tuner, UHF Oscillator Applications Unit: mm (common collector) • Transition frequency is high and dependent on current excellently. Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3

5.9. 2sc3547a.pdf Size:288K _toshiba

2SC3535
2SC3535

2SC3547A TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3547A TV Tuner, UHF Oscillator Applications Unit: mm (common collector) • Transition frequency is high and dependent on current excellently. Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3

5.10. 2sc3595.pdf Size:91K _sanyo

2SC3535
2SC3535

Ordering number:EN1756B NPN Epitaxial Planar Silicon Transistor 2SC3595 Ultrahigh-Definition CRT Display Video Output Applications Applications Package Dimensions Ultrahigh-definition CRT display. unit:mm Video output driver. 2009B Wideband amplifiers. [2SC3595] Features High fT : fT typ=2.0GHz. High current : IC=500mA. 1 : Emitter 2 : Collector 3 : Base JEDEC : TO

5.11. 2sc3502.pdf Size:157K _sanyo

2SC3535
2SC3535

Ordering number:EN1425C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1380/2SC3502 Ultrahigh-Definition CRT Display, Video Output Applications Features Package Dimensions High breakdown voltage : VCEO? 200V. unit:mm Small reverse transfer capacitance and excellent 2009B high-frequnecy characteristics [2SA1380/2SC3502] : Cre=1.2pF (NPN), 1.7pF (PNP), VCB=30V. Adoption of FBE

5.12. 2sc3576.pdf Size:108K _sanyo

2SC3535
2SC3535

Ordering number:EN1799D NPN Epitaxial Planar Silicon Transistor 2SC3576 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions LF general-purpose amplifiers, various drivers, unit:mm muting circuit. 2033 [2SC3576] Features Adoption of FBET process. High DC current gain (hFE=800 to 3200). Low collector-to-emitter saturation voltage

5.13. 2sc3504.pdf Size:48K _sanyo

2SC3535
2SC3535

Ordering number:EN1438B NPN Epitaxial Planar Silicon Transistor 2SC3504 High-Definition CRT Display, Video Output Applications Features Package Dimensions High fT. unit:mm Small reverse transfer capacitance. 2006A [2SC3504] B : Base EIAJ : SC-51 C : Collector E : Emitter SANYO : MP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit

5.14. 2sc3552.pdf Size:120K _sanyo

2SC3535
2SC3535

Ordering number:EN1597C NPN Triple Diffused Planar Silicon Transistor 2SC3552 800V/12A Switching Regulator Applications Features Package Dimensions High breakdown voltage and high reliability. unit:mm Fast switching speed (tf : 0.1 s typ). 2022A Wide ASO. [2SC3552] Adoption of MBIT process. 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB Specifications Absolute Maxi

5.15. 2sc3503.pdf Size:158K _sanyo

2SC3535
2SC3535

Ordering number:EN1426B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1381/2SC3503 High-Definition CRT Display, Video Output Applications Features Package Dimensions High breakdown voltage : VCEO? 300V. unit:mm Small reverse transfer capacitance and excellent high 2009A frequency characteristic [2SA1381/2SC3503] : Cre=1.8 pF (NPN), 2.3pF (PNP), VCB=30V. Adoption of MBIT pro

5.16. 2sc3591.pdf Size:77K _sanyo

2SC3535
2SC3535

5.17. 2sc3599.pdf Size:124K _sanyo

2SC3535
2SC3535

Ordering number:EN1764B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1405/2SC3599 Ultrahigh-Difinition CRT Display Video Output Applications Applications Package Dimensions Ultrahigh-definition CRT display. unit:mm Video output. 2009B Color TV chroma output. [2SA1405/2SC3599] Wide-band amp. Features High fT : fT typ=500MHz. High breakdown voltage : VCEO? 120V.

5.18. 2sc3596.pdf Size:118K _sanyo

2SC3535
2SC3535

Ordering number:EN1761B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1402/2SC3596 Ultrahigh-Difinition CRT Display Video Output Applications Applications Package Dimensions Ultrahigh-definition CRT display. unit:mm Video output. 2009B Color TV chroma output. [2SA1402/2SC3596] Wide-band amp. Features High fT: fT typ=700MHz. Small reverse transfer capacitance and

5.19. 2sc3597.pdf Size:118K _sanyo

2SC3535
2SC3535

Ordering number:EN1762B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1403/2SC3597 Ultrahigh-Difinition CRT Display Video Output Applications Applications Package Dimensions Ultrahig-definition CRT display. unit:mm Video output. 2009B Color TV chroma output. [2SA1403/2SC3597] Wide-band amp. Features High fT : fT typ=800MHz. Small reverse transfer capacitance and

5.20. 2sc3598.pdf Size:119K _sanyo

2SC3535
2SC3535

Ordering number:EN1763B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1404/2SC3598 Ultrahigh-Difinition CRT Display Video Output Applications Applictions Package Dimensions Ultrahigh-definition CRT display. unit:mm Video output. 2009B Color TV chroma output. [2SA1404/2SC3598] Wide-band amp. Features High fT : fT typ=500MHz. High breakdown voltage : VCEO? 120V.

5.21. ksc3503 2sc3503.pdf Size:153K _fairchild_semi

2SC3535
2SC3535

March 2008 2SC3503/KSC3503 NPN Epitaxial Silicon Transistor Applications Audio, Voltage Amplifier and Current Source CRT Display, Video Output General Purpose Amplifier Features High Voltage : VCEO= 300V Low Reverse Transfer Capacitance : Cre= 1.8pF at VCB = 30V TO-126 1 Excellent Gain Linearity for low THD 1. Emitter 2.Collector 3.Base High Frequency: 150MHz Full t

5.22. 2sc3554.pdf Size:195K _nec

2SC3535
2SC3535

5.23. ne680xx 2sc5013 2sc5008 2sc4228 2sc3585 2sc3587 2sc4095.pdf Size:247K _nec

2SC3535
2SC3535

NEC's NPN SILICON HIGH NE680 FREQUENCY TRANSISTOR SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE 00 (CHIP) 35 (MICRO-X) LOW CURRENT PERFORMANCE DESCRIPTION NEC's NE680 series of NPN epitaxial silicon transistors is designed for l

5.24. 2sc3567.pdf Size:172K _nec

2SC3535
2SC3535

5.25. 2sc3571.pdf Size:180K _nec

2SC3535
2SC3535

5.26. 2sc3588-z.pdf Size:238K _nec

2SC3535
2SC3535

5.27. 2sc3588.pdf Size:238K _nec

2SC3535
2SC3535

5.28. 2sc3568.pdf Size:172K _nec

2SC3535
2SC3535

5.29. 2sc3518.pdf Size:236K _nec

2SC3535
2SC3535

5.30. 2sc5012 2sc5007 2sc4227 2sc3583 2sc3604 2sc4094 ne681.pdf Size:218K _nec

2SC3535
2SC3535

NEC's NPN SILICON HIGH NE681 FREQUENCY TRANSISTOR SERIES FEATURES HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz LOW COST 00 (CHIP) 35 (MICRO-X) DESCRIPTION NEC's NE681 series of NPN epitaxial silicon transistors are designed for low noise, high gain, low cost amplifier applica- ti

5.31. 2sc3569.pdf Size:128K _nec

2SC3535
2SC3535

DATA SHEET SILICON POWER TRANSISTOR 2SC3569 NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING The 2SC3569 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT: mm) voltage high-speed switching, and is ideal for use in drivers such as switching regulators, DC/DC converters, and high-frequency power amplifiers. FEATURES Mold package that does no

5.32. 2sc3518-z.pdf Size:236K _nec

2SC3535
2SC3535

5.33. 2sc3570.pdf Size:136K _nec

2SC3535
2SC3535

DATA SHEET SILICON POWER TRANSISTOR 2SC3570 NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING The 2SC3570 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT: mm) voltage high-speed switching, and is ideal for use in drivers such as switching regulators, DC/DC converters, and high-frequency power amplifiers. FEATURES Mold package that does no

5.34. 2sc3582.pdf Size:109K _nec

2SC3535
2SC3535

DATA SHEET DATA SHEET SILICON TRANSISTOR 2SC3582 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3582 is an NPN epitaxial silicon transistor designed for use in PACKAFE DIMENSIONS in millimeters (inches) low-noise and small signal amplifiers from VHF band to UHF band. Low- 5.2 MAX. noise figure, high gain, and high current capability achieve a very wid

5.35. 2sc3587.pdf Size:91K _nec

2SC3535
2SC3535

DATA SHEET SILICON TRANSISTOR 2SC3587 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3587 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS (in mm) noise amplification at 0.5 to 6.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and E has a wide dynamic range. FEATURES 3.8 MIN. 3.8 MIN.

5.36. 2sc3545.pdf Size:98K _nec

2SC3535
2SC3535

DATA SHEET DATA SHEET SILICON TRANSISTOR 2SC3545 UHF OSCILLATOR AND MIXER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD DESCRIPTION The 2SC3545 is an NPN silicon epitaxial transistor intended for use as PACKAGE DIMENSIONS (Units: mm) UHF oscillator and mixer in a tuner of a TV receiver. The device features stable oscillation and small frequency drift against 2.80.2 any change of the su

5.37. 2sc3545 2sc4184 ne94430 ne94433.pdf Size:58K _nec

2SC3535
2SC3535

NPN SILICON NE944 OSCILLATOR AND MIXER TRANSISTOR SERIES DESCRIPTION FEATURES The NE944 series of NPN silicon epitaxial bipolar transistors LOW COST is intended for use in general purpose UHF oscillator and HIGH GAIN BANDWIDTH PRODUCT: mixer applications. It is suitable for automotive keyless entry fT = 2000 MHz TYP and TV tuner designs. LOW COLLECTOR TO BASE TIME CONSTANT: CCr

5.38. 2sc3583.pdf Size:92K _nec

2SC3535
2SC3535

DATA SHEET DATA SHEET SILICON TRANSISTOR 2SC3583 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3583 is an NPN epitaxial silicon transistor designed for use in PACKAGE DIMENSIONS (Units: mm) low-noise and small signal amplifiers from VHF band to UHF band. Low- noise figure, high gain, and high current capability achieve a very wide 2.80.2 dynamic ran

5.39. 2sc3585.pdf Size:92K _nec

2SC3535
2SC3535

DATA SHEET DATA SHEET SILICON TRANSISTOR 2SC3585 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR DESCRIPTION PACKAGE DIMENSIONS The 2SC3585 is an NPN epitaxial silicon transistor designed for use in (Units: mm) low-noise and small signal amplifiers from VHF band to UHF band. The 2SC3585 features excellent power gain with very low-noise figures. The 2.80.2 2SC3585 employ

5.40. 2sc3572.pdf Size:187K _nec

2SC3535
2SC3535

5.41. 2sc3528.pdf Size:130K _panasonic

2SC3535
2SC3535

5.42. 2sc3526.pdf Size:35K _panasonic

2SC3535
2SC3535

Transistor 2SC3526(H) Silicon NPN epitaxial planer type For display video output Unit: mm 5.9 0.2 4.9 0.2 Features High transition frequency fT. Small collector output capacitance Cob. Wide current range. 0.7 0.1 2.54 0.15 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 110 V +0.2 +0.2 Collector to emitter voltage VCER* 100 V 0.45

5.43. 2sc3526 e.pdf Size:39K _panasonic

2SC3535
2SC3535

Transistor 2SC3526(H) Silicon NPN epitaxial planer type For display video output Unit: mm 5.9 0.2 4.9 0.2 Features High transition frequency fT. Small collector output capacitance Cob. Wide current range. 0.7 0.1 2.54 0.15 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 110 V +0.2 +0.2 Collector to emitter voltage VCER* 100 V 0.45

5.44. 2sc3527.pdf Size:68K _panasonic

2SC3535

5.45. 2sc3507.pdf Size:60K _panasonic

2SC3535
2SC3535

Power Transistors 2SC3507 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm Features 15.0 0.3 5.0 0.2 High-speed switching 11.0 0.2 3.2 High collector to base voltage VCBO Satisfactory linearity of foward current transfer ratio hFE ? 3.2 0.1 Full-pack package which can be installed to the heat sink with one screw 2.0 0.2 Absolute

5.46. 2sc3506.pdf Size:59K _panasonic

2SC3535
2SC3535

Power Transistors 2SC3506 Silicon NPN triple diffusion planar type For high-speed switching Unit: mm Features 15.0 0.3 5.0 0.2 High-speed switching 11.0 0.2 3.2 High collector to base voltage VCBO Satisfactory linearity of foward current transfer ratio hFE ? 3.2 0.1 Full-pack package which can be installed to the heat sink with one screw 2.0 0.2 Absolute Maximum Ratings (TC=25?

5.47. 2sc3505.pdf Size:109K _fuji

2SC3535
2SC3535

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

5.48. 2sc3549.pdf Size:129K _fuji

2SC3535
2SC3535

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

5.49. 2sc3127 2sc3128 2sc3510.pdf Size:45K _hitachi

2SC3535
2SC3535

2SC3127, 2SC3128, 2SC3510 Silicon NPN Epitaxial Application UHF/VHF wide band amplifier Outline MPAK 2SC3127 3 1 1. Emitter 2. Base 2 3. Collector 2SC3127, 2SC3128, 2SC3510 TO-92 (2) 2SC3128, 2SC3510 1. Base 2. Emitter 3. Collector 3 2 1 Absolute Maximum Ratings (Ta = 25C) Item Symbol 2SC3127*1 2SC3128 2SC3510 Unit Collector to base voltage VCBO 20 20 20 V Collector to em

5.50. 2sc3553.pdf Size:23K _hitachi

2SC3535
2SC3535

2SC3553 Silicon NPN Epitaxial Application Low frequency amplifier Outline SPAK 1. Emitter 1 2 2. Collector 3 3. Base 2SC3553 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 35 V Collector to emitter voltage VCEO 35 V Emitter to base voltage VEBO 4V Collector current IC 500 mA Collector power dissipation PC 300 mW Junction temperatur

5.51. 2sc3512.pdf Size:28K _hitachi

2SC3535
2SC3535

2SC3512 Silicon NPN Epitaxial Application UHF / VHF wide band amplifier Outline TO-92 (2) 1. Base 2. Emitter 3. Collector 3 2 1 2SC3512 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 11 V Emitter to base voltage VEBO 2V Collector current IC 50 mA Collector power dissipation PC 600 mW Junction

5.52. 2sc3513.pdf Size:28K _hitachi

2SC3535
2SC3535

2SC3513 Silicon NPN Epitaxial Application UHF / VHF wide band amplifier Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC3513 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 11 V Emitter to base voltage VEBO 2V Collector current IC 50 mA Collector power dissipation PC 150 mW Junction tempe

5.53. 2sc3501.pdf Size:37K _hitachi

2SC3535

5.54. 2sc3519a.pdf Size:138K _mospec

2SC3535
2SC3535

A A A

5.55. 2sa1383 2sc3514.pdf Size:33K _no

2SC3535

5.56. 2sc3571.pdf Size:116K _savantic

2SC3535
2SC3535

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3571 DESCRIPTION With TO-220Fa package Low collector saturation voltage High switching speed APPLICATIONS Switching regulator DC-DC converter High frequency power amplifier PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute max

5.57. 2sc3552.pdf Size:80K _wingshing

2SC3535

Silicon Epitaxial Planar Transistor 2SC3552 GENERAL DESCRIPTION Silicon NPN high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose MT-100 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP MAX UNIT Collector-emitter voltage peak value V = 0V BE V - 1100 V CESM Collector-emitter voltage (open base) V - 500 V CEO Collector cur

5.58. 2sc3505.pdf Size:150K _jmnic

2SC3535
2SC3535

JMnic Product Specification Silicon NPN Power Transistors 2SC3505 DESCRIPTION ·With TO-3PN package ·High voltage ,high reliability ·High speed switching APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified ou

5.59. 2sc3507.pdf Size:182K _jmnic

2SC3535
2SC3535

JMnic Product Specification Silicon NPN Power Transistors 2SC3507 DESCRIPTION · ·With TO-3PFa package ·High-speed switching ·High collector-base voltage VCBO ·Satisfactory linearity of forward current transfer ratio hFE APPLICATIONS ·For high-speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL P

5.60. 2sc3506.pdf Size:180K _jmnic

2SC3535
2SC3535

JMnic Product Specification Silicon NPN Power Transistors 2SC3506 DESCRIPTION · ·With TO-3PFa package ·High-speed switching ·High collector-base voltage VCBO ·Satisfactory linearity of forward current transfer ratio hFE APPLICATIONS ·For high-speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL P

5.61. 2sc3519.pdf Size:28K _sanken-ele

2SC3535

LAPT 2SC3519/3519A Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1386/A) Application : Audio and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-100(TO3P) Ratings Ratings Symbol Unit Symbol Conditions Unit 2SC3519 2SC3519A 2SC3519 2SC3519A 0.2 4.8 0.4 15.6 VCBO 0.1 160 180 V 100max A 9.6 2.0 ICBO

5.62. 2sc3505.pdf Size:119K _inchange_semiconductor

2SC3535
2SC3535

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3505 DESCRIPTION Ў¤ With TO-3PN package Ў¤ High voltage ,high reliability Ў¤ High speed switching APPLICATIONS Ў¤ Switching regulators Ў¤ Ultrasonic generators Ў¤ High frequency inverters Ў¤ General purpose power amplifiers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DES

5.63. 2sc3551.pdf Size:232K _inchange_semiconductor

2SC3535
2SC3535

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3551 DESCRIPTION ·With TO-3PN package ·High voltage ,high speed switching ·High reliability APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fi

5.64. 2sc3571.pdf Size:80K _inchange_semiconductor

2SC3535
2SC3535

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3571 DESCRIPTION · ·With TO-220Fa package ·Low collector saturation voltage ·High switching speed APPLICATIONS ·Switching regulator ·DC-DC converter ·High frequency power amplifier PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolut

5.65. 2sc3550.pdf Size:261K _inchange_semiconductor

2SC3535
2SC3535

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3550 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL P

5.66. 2sc3549.pdf Size:265K _inchange_semiconductor

2SC3535
2SC3535

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2SC3549 DESCRIPTION ·High Voltage ·High Speed Switching ·High Reliability APPLICATIONS ·Switching regulators ·DC-DC converter ·Solids state relay ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Col

5.67. 2sc3502.pdf Size:136K _inchange_semiconductor

2SC3535
2SC3535

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3502 DESCRIPTION ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = 200 V ·Complement to Type 2SA1380 APPLICATIONS ·Designed for ultrahigh-definition CRT display, video out- put applicaitons ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V

5.68. 2sc3568.pdf Size:159K _inchange_semiconductor

2SC3535
2SC3535

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3568 DESCRIPTION · ·With TO-220Fa package ·Complement to type 2SA1396 ·Low collector saturation voltage ·High switching speed APPLICATIONS ·Switching regulator ·DC-DC converter ·High frequency power amplifier PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings

5.69. 2sc3559.pdf Size:123K _inchange_semiconductor

2SC3535
2SC3535

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3559 DESCRIPTION · ·With TO-220Fa package ·High breakdown voltage ·High speed switching APPLICATIONS ·Switching regulator and high voltage switching applications ·High speed DC-DC converter applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symb

5.70. 2sc3569.pdf Size:89K _inchange_semiconductor

2SC3535
2SC3535

Inchange Semiconductor Product SpecificationI Silicon NPN Power Transistors 2SC3569 DESCRIPTION · ·With TO-220F package ·Low collector saturation voltage APPLICATIONS ·High speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNI

5.71. 2sc3563.pdf Size:225K _inchange_semiconductor

2SC3535
2SC3535

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3563 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 450V (Min) ·High Switching Speed APPLICATIONS ·Switching regulator and high voltage switching applications. ·High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO C

5.72. 2sc3519 a.pdf Size:238K _inchange_semiconductor

2SC3535
2SC3535

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2SC3519/A DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= 160V(Min)-2SC3519 = 180V(Min)-2SC3519A ·Good Linearity of hFE ·Complement to Type 2SA1386/A APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT

5.73. 2sc3528.pdf Size:258K _inchange_semiconductor

2SC3535
2SC3535

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3528 DESCRIPTION ·Low Collector Saturation Voltage ·High Collector Current ·Good Linearity of hFE APPLICATIONS ·Designed for switching regulator and high voltage switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Co

5.74. 2sc3552.pdf Size:107K _inchange_semiconductor

2SC3535
2SC3535

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3552 DESCRIPTION ·High Breakdown Voltage ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VE

5.75. 2sc3570.pdf Size:276K _inchange_semiconductor

2SC3535
2SC3535

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3570 DESCRIPTION ·Collector-Emitter Sustaining Voltage : VCEO(SUS)= 400V(Min.) ·Low Collector Saturation Voltage ·Fast Switching Speed APPLICATIONS ·Designed for switching regulator, DC-DC converter and high frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL

5.76. 2sc3577.pdf Size:122K _inchange_semiconductor

2SC3535
2SC3535

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3577 DESCRIPTION Ў¤ With TO-3PFa package Ў¤ High breakdown voltage Ў¤ High speed APPLICATIONS Ў¤ For high speed switching applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Ў¤ Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB Collector-base voltage

5.77. 2sc3527.pdf Size:259K _inchange_semiconductor

2SC3535
2SC3535

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3527 DESCRIPTION ·Low Collector Saturation Voltage ·High Collector Current ·Good Linearity of hFE APPLICATIONS ·Designed for switching regulator and high voltage switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Co

5.78. 2sc3591.pdf Size:153K _inchange_semiconductor

2SC3535
2SC3535

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3591 DESCRIPTION Ў¤ With TO-220C package Ў¤ Fast switching speed Ў¤ Low collector saturation voltage APPLICATIONS Ў¤ High-definition CRT display horizontal deflection output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Ў¤ Absolute maximum rating

5.79. 2sc3565.pdf Size:217K _inchange_semiconductor

2SC3535
2SC3535

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3565 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·Good Linearity of hFE ·Low Saturation Voltage APPLICATIONS ·Designed for use in high frequency high voltage amplifier and TV viedo output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VA

5.80. 2sc3545.pdf Size:355K _inchange_semiconductor

2SC3535
2SC3535

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC3545 DESCRIPTION ·Low Base Time Constant; rbb’ • CC = 4 ps TYP. ·High Gain Bandwidth Product fT= 2 GHz TYP. @ IE= -5mA, VCE= 10V ·Low Feedback Capacitance; Cre = 0.48 pF TYP. APPLICATIONS ·Designed for use as UHF oscillator and mixer in a tuner of a TV receiver. ABSOLUTE MAXIMUM R

5.81. 2sc3507.pdf Size:148K _inchange_semiconductor

2SC3535
2SC3535

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3507 DESCRIPTION Ў¤ With TO-3PFa package Ў¤ High-speed switching Ў¤ High collector-base voltage VCBO Ў¤ Satisfactory linearity of forward current transfer ratio hFE APPLICATIONS Ў¤ For high-speed switching applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Ў¤ Absolute maximum

5.82. 2sc3540.pdf Size:131K _inchange_semiconductor

2SC3535
2SC3535

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3540 DESCRIPTION · ·With TO-220Fa package ·Low collector saturation voltage ·High speed switching time ·Complement to type 2SA1388 APPLICATIONS ·High current switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDIT

5.83. 2sc3512.pdf Size:142K _inchange_semiconductor

2SC3535
2SC3535

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC3512 DESCRIPTION ·Low Noise and High Gain NF = 1.6 dB TYP. @f = 900 MHz PG = 10.5 dB TYP. @f = 900 MHz APPLICATIONS ·Designed for use in low-noise and small signal amplifiers from VHF ~ UHF band. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 15 V

5.84. 2sc3557.pdf Size:55K _inchange_semiconductor

2SC3535
2SC3535

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3557 DESCRIPTION · ·With TO-220C package ·Low collector saturation voltage APPLICATIONS ·For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE

5.85. 2sc3566.pdf Size:278K _inchange_semiconductor

2SC3535
2SC3535

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3566 DESCRIPTION ·Low Collector Saturation Voltage ·Fast Switching Speed APPLICATIONS ·Designed for high-speed switching, and is ideal for use as a driver in devices such as switching reglators,DC/DC converters, and high frequency power amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PA

5.86. 2sc3506.pdf Size:146K _inchange_semiconductor

2SC3535
2SC3535

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3506 DESCRIPTION Ў¤ With TO-3PFa package Ў¤ High-speed switching Ў¤ High collector-base voltage VCBO Ў¤ Satisfactory linearity of forward current transfer ratio hFE APPLICATIONS Ў¤ For high-speed switching applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Ў¤ Absolute maximum

5.87. 2sc3514.pdf Size:262K _inchange_semiconductor

2SC3535
2SC3535

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3514 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1383 APPLICATIONS ·Adudio frequency power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collecto

5.88. 2sc3544.pdf Size:193K _inchange_semiconductor

2SC3535
2SC3535

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC3544 DESCRIPTION ·Low Base Time Constant; rbb’ • CC = 5 ps TYP. ·High Gain Bandwidth Product fT= 2 GHz TYP. @ IE= 5mA, VCE= 10V ·Low Feedback Capacitance; Cre = 0.55 pF TYP. APPLICATIONS ·Designed for use as UHF oscillator and mixer in a tuner of a TV receiver. ABSOLUTE MAXIMUM RA

5.89. 2sc3590.pdf Size:263K _inchange_semiconductor

2SC3535
2SC3535

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2SC3590 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·Fast Switching Speed ·Low Saturation Voltage APPLICATIONS ·Designed for high definition CRT display horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCB

5.90. 2sc3554.pdf Size:1100K _kexin

2SC3535
2SC3535

SMD Type Transistors NPN Transistors 2SC3554 SOT-89 Unit:mm 1.70 0.1 ■ Features ● Collector Current Capability IC=200mA ● Collector Emitter Voltage VCEO=300V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 300 Collector - Emitter Voltage VCEO 300 V Emitter - Base Voltag

5.91. 2sc3515.pdf Size:1234K _kexin

2SC3535
2SC3535

SMD Type Transistors NPN Transistors 2SC3515 SOT-89 Unit:mm 1.70 0.1 ■ Features ● Collector Current Capability IC=100mA ● Collector Emitter Voltage VCEO=300V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 300 Collector - Emitter Voltage VCEO 300 V Emitter - Base Voltag

5.92. 2sc3518-z.pdf Size:1205K _kexin

2SC3535
2SC3535

SMD Type Transistors NPN Transistors 2SC3518-Z TO-252 Unit: mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 ■ Features ● High DC current gain ● Low saturation voltage 0.127 ● Complementary to 2SA1385-Z +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector 3 Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbo

5.93. 2sc3547a.pdf Size:1044K _kexin

2SC3535
2SC3535

SMD Type Transistors NPN Transistors 2SC3547A SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Current Capability IC=30mA ● Collector Emitter Voltage VCEO=12V 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collec

5.94. 2sc3545.pdf Size:1218K _kexin

2SC3535
2SC3535

SMD Type Transistors NPN Transistors 2SC3545 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Current Capability IC=50mA 1 2 ● Collector Emitter Voltage VCEO=15V +0.1 +0.05 0.95-0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collect

5.95. 2sc3513.pdf Size:889K _kexin

2SC3535
2SC3535

SMD Type Transistors NPN Transistors 2SC3513 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Current Capability IC=50mA 1 2 ● Collector Emitter Voltage VCEO=11V +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collec

5.96. 2sc3583.pdf Size:1453K _kexin

2SC3535
2SC3535

SMD Type Transistors NPN Transistors 2SC3583 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 ■ Features ● Collector Current Capability IC=65mA 1 2 ● Collector Emitter Voltage VCEO=10V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Colle

5.97. 2sc3585.pdf Size:1442K _kexin

2SC3535
2SC3535

SMD Type Transistors NPN Transistors 2SC3585 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Current Capability IC=35mA 1 2 ● Collector Emitter Voltage VCEO=10V +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collect

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
Back to Top

 


2SC3535
  2SC3535
  2SC3535
 

social 

Список транзисторов

Обновления

BJT: FW26025A1 | 2T665B9 | 2T665A9 | MJ13001A | HSC2682 | MRF660 | MP1620 | HLD133D | BFR360F | AV8050S | 3DD5027 | 3DD2901 | 3DD2102 | 3DD313 | 3DD209L | XP6111 | STC8050N | CHT847BWPT | 3DD4204D | 2SC6092LS |

 

 

 

 

Back to Top