2SC3585 - описание и поиск аналогов

 ..1. Size:92K  nec
 2sc3585.pdf 

DATA SHEET DATA SHEET SILICON TRANSISTOR 2SC3585 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR DESCRIPTION PACKAGE DIMENSIONS The 2SC3585 is an NPN epitaxial silicon transistor designed for use in (Units mm) low-noise and small signal amplifiers from VHF band to UHF band. The 2SC3585 features excellent power gain with very low-noise figures. The 2.8 0.2 2SC3585 em

 ..2. Size:247K  nec
 ne680xx 2sc5013 2sc5008 2sc4228 2sc3585 2sc3587 2sc4095.pdf 

NEC's NPN SILICON HIGH NE680 FREQUENCY TRANSISTOR SERIES FEATURES HIGH GAIN BANDWIDTH PRODUCT fT = 10 GHz LOW NOISE FIGURE 1.7 dB at 2 GHz 2.6 dB at 4 GHz HIGH ASSOCIATED GAIN 12.5 dB at 2 GHz 8.0 dB at 4 GHz EXCELLENT LOW VOLTAGE 00 (CHIP) 35 (MICRO-X) LOW CURRENT PERFORMANCE DESCRIPTION NEC's NE680 series of NPN epitaxial silicon transistors is designed for l

 ..3. Size:1442K  kexin
 2sc3585.pdf 

SMD Type Transistors NPN Transistors 2SC3585 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=35mA 1 2 Collector Emitter Voltage VCEO=10V +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collect

 ..4. Size:209K  inchange semiconductor
 2sc3585.pdf 

isc Silicon NPN RF Transistor 2SC3585 DESCRIPTION Collector Current I = 35mA C Collector-Emitter Breakdown Voltage- V = 10V(Min) (BR)CEO High gain 2 S21e = 5.5 dB (typical) ( I =5mA,f=2GHz) C Gain bandwidth product fT = 10 GHZ (typical) (I =10mA,f=1GH) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Design

 0.1. Size:2472K  slkor
 2sc3585a 2sc3585b 2sc3585c 2sc3585d.pdf 

2SC3585 NPN 2SC3585 NPN SOT-23-3L VHF UHF CATV S21e 2 5.5dB @ VCE=6V IC=

 8.1. Size:91K  nec
 2sc3587.pdf 

DATA SHEET SILICON TRANSISTOR 2SC3587 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3587 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS (in mm) noise amplification at 0.5 to 6.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and E has a wide dynamic range. FEATURES 3.8 MIN. 3.8 M

 8.2. Size:109K  nec
 2sc3582.pdf 

DATA SHEET DATA SHEET SILICON TRANSISTOR 2SC3582 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3582 is an NPN epitaxial silicon transistor designed for use in PACKAFE DIMENSIONS in millimeters (inches) low-noise and small signal amplifiers from VHF band to UHF band. Low- 5.2 MAX. noise figure, high gain, and high current capability achieve a very

 8.3. Size:218K  nec
 2sc5012 2sc5007 2sc4227 2sc3583 2sc3604 2sc4094 ne681.pdf 

NEC's NPN SILICON HIGH NE681 FREQUENCY TRANSISTOR SERIES FEATURES HIGH GAIN BANDWIDTH PRODUCT fT = 8 GHz LOW NOISE FIGURE 1.2 dB at 1 GHz 1.6 dB at 2 GHz HIGH ASSOCIATED GAIN 15 dB at 1 GHz 12 dB at 2 GHz LOW COST 00 (CHIP) 35 (MICRO-X) DESCRIPTION NEC's NE681 series of NPN epitaxial silicon transistors are designed for low noise, high gain, low cost amplifier a

 8.4. Size:238K  nec
 2sc3588-z 2sc3588.pdf 

 8.5. Size:92K  nec
 2sc3583.pdf 

DATA SHEET DATA SHEET SILICON TRANSISTOR 2SC3583 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3583 is an NPN epitaxial silicon transistor designed for use in PACKAGE DIMENSIONS (Units mm) low-noise and small signal amplifiers from VHF band to UHF band. Low- noise figure, high gain, and high current capability achieve a very wide 2.8 0.2 dynamic

 8.6. Size:40K  kexin
 2sc3588-z.pdf 

SMD Type Transistors NPN Silicon Triple Diffused Transistor 2SC3588-Z TO-252 Unit mm +0.15 +0.1 6.50-0.15 2.30-0.1 +0.2 +0.8 5.30-0.2 0.50-0.7 Features High voltage VCEO=400V 0.127 +0.1 max 0.80-0.1 +0.1 2.3 0.60-0.1 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO 500 V Collector t

 8.7. Size:1453K  kexin
 2sc3583.pdf 

SMD Type Transistors NPN Transistors 2SC3583 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=65mA 1 2 Collector Emitter Voltage VCEO=10V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Colle

 8.8. Size:241K  inchange semiconductor
 2sc3588.pdf 

isc Silicon NPN Power Transistor 2SC3588 DESCRIPTION Low Collector Saturation Voltage- V = 0.5V(Max)@ I = 300mA CE(sat) C High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO Complement to Type 2SA1400 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high Voltage switching applications ABSOLUTE MAXIMUM

 8.9. Size:184K  inchange semiconductor
 2sc3582.pdf 

INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3582 DESCRIPTION Low Noise Figure, High Gain, and High Current Capability Achieve a Very Wide Dynamic Range and Excellent Linearity. Low Noise and High Gain NF = 1.2 dB TYP. @f = 1.0 GHz Ga = 12 dB TYP. @f = 1.0 GHz Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed f

 8.10. Size:241K  inchange semiconductor
 2sc3588-z.pdf 

isc Silicon NPN Power Transistor 2SC3588-Z DESCRIPTION Low Collector Saturation Voltage- V = 0.5V(Max)@ I = 300mA CE(sat) C High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO Complement to Type 2SA1400-Z Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high Voltage switching applications ABSOLUTE MAX

 8.11. Size:406K  inchange semiconductor
 2sc3583.pdf 

isc Silicon NPN RF Transistor 2SC3583 DESCRIPTION Low Noise and High Gain NF = 1.2 dB TYP., G = 11 dB TYP. a @V = 8 V, I = 7 mA, f = 1.0 GHz CE C High Power Gain MAG = 15dB TYP. @V = 8V, I = 20 mA, f = 1.0 GHz CE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low noise amplifier at VHF, UHF and CATV band. AB