2SC3605 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC3605 VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm FEATURES: Low Noise Figure, High Gain NF = 1.1dB, |S |2 = 10dB (f = 1GHz) 21eMAXIMUM RATINGS (Ta = 25C) CHARACTERISTIC SYMBOL RATING UNITCollector-Base Voltage VCBO 20 VCollector-Emitter Voltage VCEO 12 VEmitter-Base Voltage VEBO 3 VCol

2SC3606 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3606 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 11dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3 VC

2SC3607 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3607 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 9.5dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3 V

Ordering number:EN1788APNP/NPN Epitaxial Planar Silicon Transistors2SA1418/2SC3648High-Voltage Switching,Predriver ApplicationsApplications Package Dimensions Color TV audio output, inverter. unit:mm2038Features [2SA1418/2SC3648] Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Fast switching speed. Very small size marki

Ordering number:EN1766CPNP/NPN Epitaxial Planar Silicon Transistors2SA1407/2SC3601Ultrahigh-Definition CRT DisplayVideo Output ApplicationsApplications Package Dimensions Ultrahigh-definition CRT display.unit:mm Video output.2009B Color TV chroma output.[2SA1407/2SC3601] Wide-band amp.Features High fT : fT typ=400MHz. High breakdown voltage : VCEO

Ordering number:EN2488NPN Triple Diffused Planar Type Darlington Silicon Transistor2SC3664400V/20A Driver ApplicationsApplications Package Dimensions Induction cookers.unit:mm High-voltage, high power switching.2022A[2SC3664]Features Fast speed (adoption of MBIT process). High breakdown voltage (VCBO=800V). High reliability (adoption of HVP process).

Ordering number:EN2006APNP/NPN Epitaxial Planar Silicon Transistors2SA1417/2SC3647High-Voltage Switching ApplicationsFeatures Package Dimensions Adoption of FBET, MBIT processes.unit:mm High breakdown voltage and large current capacity.2038 Fast switching time.[2SA1417/2SC3647] Very small size making it easy to provide high-density, small-sized hybrid ICs.E

Ordering number:EN1626CNPN Triple Diffused Planar Silicon Transistor2SC3642Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High reliability (Adoption of HVP process).unit:mm Fast speed.2022A High breakdown voltage.[2SC3642] Adoption of MBIT process.1 : Base2 : Collector3 : EmitterSANYO : TO-3PBSpe

Ordering number:EN1628CNPN Triple Diffused Planar Silicon Transistor2SC3644Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High reliability (Adoption of HVP process).unit:mm High speed.2022A High breakdown voltage.[2SC3644] Adoption of MBIT process.1 : Base2 : Collector3 : EmitterSANYO : TO-3PBSpe

Ordering number : EN2005B2SA1416 / 2SC3646SANYO SemiconductorsDATA SHEETPNP / NPN Epitaxial Planar Silicon Transistors2SA1416 / 2SC3646High-Voltage Switching ApplicationsFeatures Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Fast switching speed. Ultrasmall size making it easy to provide high-density, small-sized hybrid IC

Ordering number:EN1939BNPN Triple Diffused Planar Silicon Transistor2SC3687Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsApplications Package Dimensions Ultrahigh-definition color display horizontal deflec-unit:mmtion output.2022A[2SC3687]Features Fast speed (tf typ=100ns). High breakdown voltage (VCBO=1500V). High reliability (

Ordering number:EN1637CNPN Triple Diffused Planar Silicon Transistor2SC3638Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High reliability (Adoption of HVP process).unit:mm Fast speed.2022A High breakdown voltage.[2SC3638] Adoption of MBIT process.1 : Base2 : Collector3 : EmitterSANYO : TO-3PBSpe

Ordering number:EN1779ANPN Epitaxial Planar Silicon Transistor2SC3651High hFE, Low-FrequencyGeneral-Purpose Amplifier ApplicationsApplications Package Dimensions LF amplifiers, various drivers, muting circuit. unit:mm2038Features [2SC3651] High DC current gain (hFE=500 to 2000). High breakdown voltage (VCEO 100V). Low collector-to-emitter saturation voltage

Ordering number:EN1614CNPN Triple Diffused Planar Silicon Transistor2SC3636Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High reliability (Adoption of HVP process).unit:mm Fast speed.2022A High breakdown voltage.[2SC3636] Adoption of MBIT process.1 : Base2 : Collector3 : EmitterSANYO : TO-3PBSpe

Ordering number:EN1937ANPN Triple Diffused Planar Silicon Transistor2SC3685Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsApplications Package Dimensions Ultrahigh-definition color display horizontal deflec-unit:mmtion output.2022A[2SC3685]Features Fast speed (tf typ=100ns). High breakdown voltage (VCBO=1500V). High reliability (

Ordering number : EN2006C2SA1417 / 2SC3647SANYO SemiconductorsDATA SHEETPNP / NPN Epitaxial Planar Silicon TransistorsHigh-Voltage Switching2SA1417 / 2SC3647ApplicationsFeatures Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Ultrasmall size making it easy to provide high-density small-sized hybrid ICs.Specifications ( ) : 2S

Ordering number:EN1801ENPN Triple Diffused Planar Silicon Transistor2SC3676900V/300mA High-Voltage AmplifierHigh-Voltage Switching ApplicationsApplications Package Dimensions High voltage amplifiers.unit:mm High-voltage switching applications.2010C Dynamic focus applications.[2SC3676]Features High breakdown voltage (VCEO min=900V). Small Cob (Cob typ=5

Ordering number:EN1855ANPN Epitaxial Planar Silicon Transistor2SC3689High hFE, Low-FrequencyGeneral-Purpose Amplifier ApplicationsApplications Package Dimensions Low frequency general-purpose amplifiers, drivers,unit:mmmuting circuits.2018A[2SC3689]Features Small Cob (Cob=1.5pF typ). Very small-sized package permitting 2SC3689-usedsets to be made smaller, sl

Ordering number:EN1938ANPN Triple Diffused Planar Silicon Transistor2SC3686Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsApplications Package Dimensions Ultrahigh-definition color display horizontal deflec-unit:mmtion output.2022A[2SC3686]Features Fast speed (tf typ=100ns). High breakdown voltage (VCBO=1500V). High reliability (

Ordering number:EN2007APNP/NPN Epitaxial Planar Silicon Transistors2SA1419/2SC3649High-Voltage Switching ApplicationsFeatures Package Dimensions Adoption of FBET, MBIT processes.unit:mm High breakdown voltage and large current capacity.2038 Very small size making it easy to provide high-[2SA1419/2SC3649]density hybrid ICs.E : EmitterC : CollectorB : Base(

Ordering number:EN1800ENPN Triple Diffused Planar Silicon Transistor2SC3675900V/100mA High-Voltage AmplifierHigh-Voltage Switching ApplicationsApplications Package Dimensions High voltage amplifiers.unit:mm High-voltage switching applications.2010C Dynamic focus applications.[2SC3675]Features High breakdown voltage (VCEO min=900V). Small Cob (Cob typ=2

Ordering number:EN1627CNPN Triple Diffused Planar Silicon Transistor2SC3643Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High reliability (Adoption of HVP process).unit:mm Fast speed.2022A High breakdown voltage.[2SC3643] Adoption of MBIT process.1 : Base2 : Collector3 : EmitterSANYO : TO-3PBSpe

Ordering number : EN1788B2SA1418 / 2SC3648SANYO SemiconductorsDATA SHEETPNP / NPN Epitaxial Planar Silicon TransistorsHigh-Voltage Switching,2SA1418 / 2SC3648Preriver ApplicationsApplications Color TV audio output, inverter.Features Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Fast switching speed. Ultrasmall siz

Ordering number:EN1765APNP/NPN Epitaxial Planar Silicon Transistors2SA1406/2SC3600Ultrahigh-Definition CRT DisplayVideo Output ApplicationsApplications Package Dimensions Ultrahigh-definition CRT display.unit:mm Video output.2009A Color TV chroma output.[2SA1406/2SC3600] Wide-band amp.Features High fT : fT typ=400MHz. High breakdown voltage : VCEO

Ordering number:EN1780ANPN Epitaxial Planar Silicon Transistor2SC3650High hFE, Low-FrequencyGeneral-Purpose Amplifier ApplicationsApplications Package Dimensions LF amplifiers, various drivers, muting circuit. unit:mm2038Features [2SC3650] High DC current gain (hFE=800 to 3200). Low collector-to-emitter saturation voltage(VCE(sat) 0.5V). Large current capa

Ordering number:EN1854ANPN Epitaxial Planar Silicon Transistor2SC3661High hFE, Low-FrequencyGeneral-Purpose Amplifier ApplicationsApplications Package Dimensions Low frequency general-purpose amplifiers, drivers,unit:mmmuting circuit.2018A[2SC3661]Features Very small-sized package permitting 2SC3661-usedsets to be made smaller, slimmer. Adoption of FBET proc

Ordering number:EN1615CNPN Triple Diffused Planar Silicon Transistor2SC3637Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High reliability (Adoption of HVP process).unit:mm Fast speed.2022A High breakdown voltage.[2SC3637] Adoption of MBIT process.1 : Base2 : Collector3 : EmitterSANYO : TO-3PBSpe

Ordering number : EN2007B2SA1419 / 2SC3649SANYO SemiconductorsDATA SHEETPNP / NPN Epitaxial Planar Silicon Transistors2SA1419 / 2SC3649High-Voltage Switching ApplicationsFeatures Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Ultrasmall size making it easy to provide high-density, small-sized hybrid ICs.Specifications ( ) :

Ordering number:EN1940BNPN Triple Diffused Planar Silicon Transistor2SC3688Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsApplications Package Dimensions Ultrahigh-definition color display horizontal deflec-unit:mmtion output.2022A[2SC3688]Features Fast speed (tf=100ns typ). High breakdown voltage (VCBO=1500V). High reliability (

Ordering number:EN2005APNP/NPN Epitaxial Planar Silicon Transistors2SA1416/2SC3646High-Voltage Switching ApplicationsFeatures Package Dimensions Adoption of FBET, MBIT processes.unit:mm High breakdown voltage and large current capacity.2038 Fast switching time.[2SA1416/2SC3646] Very small size making it easy to provide high-density, small-sized hybrid ICs.E

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

NEC's NPN SILICON HIGH NE856FREQUENCY TRANSISTOR SERIESFEATURES HIGH GAIN BANDWIDTH PRODUCT:fT = 7 GHz LOW NOISE FIGURE:1.1 dB at 1 GHz HIGH COLLECTOR CURRENT: 100 mA HIGH RELIABILITY METALLIZATION35 (MICRO-X)00 (CHIP) LOW COSTDESCRIPTIONNEC's NE856 series of NPN epitaxial silicon transistors isdesigned for low cost amplifier and oscillator application

DATA SHEETSILICON TRANSISTORS2SC3623, 3623ANPN SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY POWER AMPLIFIERS AND SWITCHINGFEATURES PACKAGE DRAWING (UNIT: mm) High hFE:hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA Low VCE(sat):VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA High VEBO:VEBO: 12 V (2SC3623)VEBO: 15 V (2SC3623A)ABSOLUTE MAXIMUM RATINGS (Ta = 25C

DATA SHEETDATA SHEETSILICON TRANSISTOR2SC3663NPN EPITAXIAL SILICON TRANSISTORFOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATIONFEATURESPACKAGE DIMENSIONS (in mm) Low-voltage, low-current, low-noise and high-gain2.8 0.2NF = 3.0 dB TYP. @VCE = 1 V, IC = 250 A, f = 1.0 GHz+0.11.5 0.650.15GA = 3.5 dB TYP. @VCE = 1 V, IC = 250 A, f = 1.0 GHz Ideal for battery driv

DATA SHEETSILICON TRANSISTORS2SC3622, 3622ANPN SILICON EPITAXIAL TRANSISTORFOR LOWFREQUENCY POWER AMPLIFIERS AND SWITCHINGFEATURES PACKAGE DRAWING (UNIT: mm) High hFE:hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA Low VCE(sat):VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA High VEBO:VEBO: 12 V (2SC3622)VEBO: 15 V (2SC3622A)ABSOLUTE MAXIMUM RATINGS (Ta = 25

DATA SHEETSILICON TRANSISTOR2SC3603NPN EPITAXIAL SILICON TRANSISTORFOR MICROWAVE LOW-NOISE AMPLIFICATIONThe 2SC3603 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS (in mm)noise amplification at 0.5 to 4.0 GHz. This transistor has low-noiseand high-gain characteristics in a wide collector current region, and Ehas a wide dynamic range.FEATURES3.8 MIN. 3.8 M

DATA SHEETSILICON TRANSISTOR2SC3604NPN EPITAXIAL SILICON TRANSISTORFOR MICROWAVE LOW-NOISE AMPLIFICATIONThe 2SC3604 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS (in mm)noise amplification at 1.0 to 6.0 GHz. This transistor has low-noiseand high-gain characteristics in a wide collector current region, and Ehas a wide dynamic range.FEATURES3.8 MIN. 3.8 M

NEC's NPN SILICON HIGH NE681FREQUENCY TRANSISTOR SERIESFEATURES HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz LOW NOISE FIGURE:1.2 dB at 1 GHz1.6 dB at 2 GHz HIGH ASSOCIATED GAIN:15 dB at 1 GHz12 dB at 2 GHz LOW COST00 (CHIP) 35 (MICRO-X)DESCRIPTIONNEC's NE681 series of NPN epitaxial silicon transistors aredesigned for low noise, high gain, low cost amplifier a

DATA SHEETwww.onsemi.comBipolar TransistorELECTRICAL CONNECTION22()100 V, ()1 A, Low VCE(sat), (PNP)NPN Single PCP1: Base1 12: Collector3: Emitter2SA1416, 2SC36463 32SA1416 2SC3646Features Adoption of FBET and MBIT Processes High Breakdown Voltage and Large Current Capacity Fast Switching Speed12 Ultrasmall Size Making it Easy to Provi

Ordering number : EN1788C2SA1418/2SC3648Bipolar Transistorhttp://onsemi.com() () ( ) ( )160V, 0.7A, Low VCE sat , PNP NPN Single PCPApplicaitons Color TV audio output, inverterFeatures Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Fast switching speed Ultrasmall size making it easy to provide high-density, small-

Ordering number : EN2005C2SA1416/2SC3646Bipolar Transistorhttp://onsemi.com() ) ( ), (100V, ( 1A, Low VCE sat PNP)NPN Single PCPFeatures Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Fast switching speed Ultrasmall size making it easy to provide high-density, small-sized hybrid ICsSpecifications ( ) : 2SA1416Absol

DATA SHEETwww.onsemi.comBipolar Transistor12(-)100 V, (-)2 A, Low VCE(sat),3SOT-89-3(PNP) NPN Single PCPCASE 419AU2SA1417, 2SC3647ELECTRICAL CONNECTIONFeatures2 2 Adoption of FBET, MBIT Processes1 : Base High Breakdown Voltage and Large Current Capacity1 1 2 : Collector Ultrasmall Size Making it Easy to Provide High-density Small-sized3 : Emitter

Ordering number : EN2006D2SA1417/2SC3647Bipolar Transistorhttp://onsemi.com(-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single PCPFeatures Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Fast switching speed Ultrasmall size making it easy to provide high-density small-sized hybrid ICsSpecifications ( ) : 2SA1417Absolute Maximum Rati

Ordering number : EN1788C2SA1418/2SC3648Bipolar Transistorhttp://onsemi.com() () ( ) ( )160V, 0.7A, Low VCE sat , PNP NPN Single PCPApplicaitons Color TV audio output, inverterFeatures Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Fast switching speed Ultrasmall size making it easy to provide high-density, small-

Ordering number : EN2007C2SA1419/2SC3649Bipolar Transistorhttp://onsemi.com() () ( ) ( )160V, 1.5A, Low VCE sat , PNP NPN Single PCPFeatures Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Ultrasmall size making it easy to provide high-density, small-sized hybrid ICsSpecifications ( ) : 2SA1419Absolute Maximum Ratings at

Ordering number : EN2007C2SA1419/2SC3649Bipolar Transistorhttp://onsemi.com() () ( ) ( )160V, 1.5A, Low VCE sat , PNP NPN Single PCPFeatures Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Ultrasmall size making it easy to provide high-density, small-sized hybrid ICsSpecifications ( ) : 2SA1419Absolute Maximum Ratings at

Power Transistors2SC3611Silicon NPN epitaxial planar typeUnit: mmFor video amplifier8.0+0.50.13.20.2 3.160.1 Features High transition frequency fT Small collector output capacitance Cob Wide current range TO-126B package which requires no insulation plate for installa-tion to the heat sink Absolute Maximum Ratings TC = 25C0.750.10.50.

UNISONIC TECHNOLOGIES CO., LTD 2SC3648 NPN SILICON TRANSISTOR HIGH-VOLTAGE SWITCHING PREDRIVER APPLICATIONS FEATURES * High Breakdown Voltage and Large Current Capacity * Fast Switching Speed 1* Over Current Protection Function SOT-89 ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 32SC3648G-x-AB3-R SOT-89 B C E Tape ReelNote: Pin Ass

UNISONIC TECHNOLOGIES CO.,LTD 2SC3647 NPN SILICON TRANSISTOR HIGH-VOLTAGE SWITCHING APPLICATIONS FEATURES * High breakdown voltage and large current capacity * Fast switching time * Very small size marking it easy to provide high density, small-sized hybrid ICs 1SOT-89Lead-free: 2SC3647LHalogen-free: 2SC3647G ORDERING INFORMATION Ordering Number Pin Assignment

UNISONIC TECHNOLOGIES CO., LTD 2SC3669 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES * Low saturation voltage VCE(SAT)=0.5V (Max.) * High speed switching time: TSTG=1.0s (Typ.) ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC3669L-x-AA3-R 2SC3669G-x-AA3-R SOT

2SC3650 1.2 A , 30 V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES Small Flat Package. 4 Large Current Capacity. High DC Current Gain 123A Low VCE(sat) ECB DAPPLICATION F GLF Amplifiers, Various Drivers, Muting Circuit H KJ LMillimeter Mi

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate TransistorsSOT-89-3L 2SC3650 TRANSISTOR (NPN)1. BASEFEATURES2. COLLECTOR Small Flat Package High DC Current Gain3. EMITTER Low VCE(sat) Large Current CapacityAPPLICATIONS LF Amplifiers, Various Drivers, Muting CircuitMARKING:CF MAXIMUM RATINGS (Ta=25 unless otherwise n

Power Transistors www.jmnic.com 2SC3694 Silicon NPN Transistors Features B C E With TO-220Fa package High speed ,power switching applications Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNITVCBO Collector to base voltage 100 V VCEO Collector to emitter voltage 60 V VEBO Emitter to base voltage 5 V IC Collector current 15 A PC Collector power dissipa

Product Specification www.jmnic.comSilicon NPN Power Transistors 2SC3691 DESCRIPTION With TO-220Fa package Large current ,high speed Low saturation voltage APPLICATIONS Designed for high speed and power switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO C

JMnic Product Specification Silicon NPN Power Transistors 2SC3679 DESCRIPTION With TO-3PN package High voltage switching transistor APPLICATIONS For switching regulator and general purpose applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol3 EmitterAbsolute maximum ratings (Ta=25)

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC3678 ESCRIPTION High Voltage Switching With TO-3PN package APPLICATIONS Switching Regulator General Purpose PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterFig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=) SYMBOL PARAMETER CON

JMnic Product Specification Silicon NPN Power Transistors 2SC3638 DESCRIPTION With TO-3PN package High voltage ,high speed High reliability APPLICATIONS Ultrahigh-definition CRT display horizontal deflection output applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbs

JMnic Product Specification Silicon NPN Power Transistors 2SC3685 DESCRIPTION With TO-3PN package High breakdown voltage High reliability Fast speed APPLICATIONS Ultrahigh-definition CRT display horizontal deflection output applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3

Power Transistors www.jmnic.ocm 2SC3692 Silicon NPN Transistors Features B C E With TO-220Fa package High speed ,power switching applications Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNITVCBO Collector to base voltage 100 V VCEO Collector to emitter voltage 60 V VEBO Emitter to base voltage 5 V IC Collector current 7 A PC Collector power dissipat

JMnic Product Specification Silicon NPN Power Transistors 2SC3658 DESCRIPTION With TO-3 package High voltage ,high speed Built-in damper diode APPLICATIONS For color TV horizontal deflection output applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PAR

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC3686 ESCRIPTION High breakdown voltage High reliability (adoption of HVP process). Fast speed Adoption of MBIT process. With TO-3PN package APPLICATIONS Ultrahigh-definition color display horizontal deflection output. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting ba

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC3680 ESCRIPTION High Voltage Switching Transistor With TO-3PN package APPLICATIONS Switching Regulator General Purpose PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterFig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=) SYMBOL PA

Power Transistors www.jmnic.com 2SC3693 Silicon NPN Transistors Features B C E With TO-220Fa package High speed ,power switching applications Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNITVCBO Collector to base voltage 100 V VCEO Collector to emitter voltage 60 V VEBO Emitter to base voltage 5 V IC Collector current 10 A PC Collector power dissipa

JMnic Product Specification Silicon NPN Power Transistors 2SC3637 DESCRIPTION With TO-3PN package High voltage ,high speed High reliability APPLICATIONS Ultrahigh-definition CRT display horizontal deflection output applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbs

JMnic Product Specification Silicon NPN Power Transistors 2SC3688 DESCRIPTION With TO-3PN package High breakdown voltage High speed APPLICATIONS Ultrahigh-definition color display horizontal deflection output applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute m

2SC3679Silicon NPN Triple Diffused Planar Transistor (High Voltage Switching Transistor)Application : Switching Regulator and General PurposeExternal Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol 2SC3679 Symbol Conditions 2SC3679 UnitUnit0.24.80.415.60.19.6 2.0VCBO 900 ICBO VCB=800V 100max AVVCEO 80

2SC3678Silicon NPN Triple Diffused Planar Transistor (High Voltage Switching Transistor)Application : Switching Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-100(TO3P)Symbol 2SC3678 Symbol Conditions 2SC3678Unit Unit0.24.80.415.6VCBO 900 ICBO VCB=800V 100maxV A 0.19.6 2.0VCEO 800

2SC3680Silicon NPN Triple Diffused Planar Transistor (High Voltage Switching Transistor)Application : Switching Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-100(TO3P)Symbol 2SC3680 Symbol Conditions 2SC3680 UnitUnit0.24.80.415.6VCBO 900 ICBO VCB=800V 100max A 2.00.1V 9.6VCEO 800

2S 3650C SOT-89-3L TRANSISTOR (NPN)1. BASE FEATURES 2. COLLECTOR Small Flat Package High DC Current Gain 3. EMITTER Low VCE(sat) Large Current Capacity APPLICATIONS LF Amplifiers, Various Drivers, Muting Circuit MARKING:CF MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 30 V CBOV Col

RoHS 2SC3679B RoHS SEMICONDUCTORNell High Power ProductsSilicon NPN triple diffusion planar transistor(High voltage switching transistor)5A/800V/100W15.60.44.80.29.62.00.13.20,1TO-3P(B)23+0.2+0.20.651.05-0.1-0.1FEATURES5.450.1 5.450.11.4 High-speed switchingB C E High collector to base voltage VCBO Satisfactory linearity of fow

SMD Type TransistorsNPN Transistors2SC36481.70 0.1 Features High breakdown voltage and large current capacity. Fast switching speed. Complementary to 2SA14180.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 180 Collector - Emitter Voltage VCEO 160 V Emitter

SMD Type TransistorsNPN Transistors2SC36471.70 0.1 Features High breakdown voltage and large current capacity. Complementary to 2SA14170.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 100 V Emitter - Base Voltage VEBO 6 Coll

SMD Type TransistorsNPN Transistors2SC3663SOT-23Unit: mm2.9+0.1-0.1+0.10.4 -0.13 Features Collector Current Capability IC=5mA1 2 Collector Emitter Voltage VCEO=8V+0.1+0.050.95 -0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collecto

SMD Type TransistorsNPN Transistors2SC3651SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=0.2A Collector Emitter Voltage VCEO=100V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 100 V Emitter - Base Voltage

SMD Type TransistorsNPN Transistors2SC3624SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=150mA Collector Emitter Voltage VCEO=50V1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Coll

SMD Type TransistorsNPN Transistors2SC3618SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=0.7A Collector Emitter Voltage VCEO=25V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 25 V Emitter - Base Voltage VE

SMD Type TransistorsNPN Transistors2SC3689SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=50V 1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Colle

SMD Type TransistorsNPN Transistors2SC36491.70 0.1 Features High breakdown voltage and large current capacity. Complementary to 2SA14190.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 180 Collector - Emitter Voltage VCEO 160 V Emitter - Base Voltage VEBO 6 Coll

SMD Type TransistorsNPN Transistors2SC3606SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=80mA1 2 Collector Emitter Voltage VCEO=12V+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collect

SMD Type TransistorsNPN Transistors2SC36451.70 0.1 Features High breakdown voltage Excellent linearity of hFE and small Cob. Fast switching speed.0.42 0.10.46 0.1 Small Package For Mounting Complementary to 2SA14151.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 18

SMD Type TransistorsNPN Transistors2SC3617SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=0.3A Collector Emitter Voltage VCEO=50V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VE

SMD Type TransistorsNPN Transistors2SC3607SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=80mA Collector Emitter Voltage VCEO=12V Marking : MH0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 12 V Emitter

SMD Type TransistorsNPN Transistors2SC3650SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=1.2A Collector Emitter Voltage VCEO=25V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 25 V Emitter - Base Voltage VE

SMD Type TransistorsNPN Transistors2SC3632-ZTO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features High voltage High speed0.127+0.10.80-0.1max Complementary to 2SA1413-Z+ 0.11 Base2.3 0.60- 0.1+0.154.60 -0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collec

SMD Type TransistorsNPN Transistors2SC3661SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=300mA1 2 Collector Emitter Voltage VCEO=25V+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collec

SMD Type TransistorsNPN Transistors2SC3624ASOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=150mA Collector Emitter Voltage VCEO=50V1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Col

SMD Type TransistorsNPN Transistors2SC36461.70 0.1 Features High breakdown voltage and large current capacity. Fast switching speed. Complementary to 2SA14160.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 100 V Emitter

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3677DESCRIPTIONLow Collector Saturation VoltageHigh breakdown voltageGood Linearity of hFE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh voltage amplifierHigh-voltage switching applicationsDynamis focus applicationsABSOLUTE

isc Silicon NPN Power Transistor 2SC3694DESCRIPTIONLow Collector Saturation Voltage: V = 0.5V(Max)@ I = 12ACE(sat) CCollector-Emitter Sustaining Voltage-: V = 60V (Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed and power switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS

isc Silicon NPN Power Transistor 2SC3691DESCRIPTIONLow Collector Saturation Voltage: V = 0.5V(Max)@ I = 4ACE(sat) CCollector-Emitter Sustaining Voltage-: V = 60V (Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed and power switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSY

isc Silicon NPN Power Transistor 2SC3679DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 800V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

isc Silicon NPN Power Transistor 2SC3678DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 800V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3631-ZDESCRIPTIONWith TO-252(DPAK) packagingExcellent linearity of hFELow collector-to-emitter saturation voltageFast switching speedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRelay driversHigh-speed invertersConvertersHigh current switching a

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3642DESCRIPTIONLow Collector Saturation VoltageHigh breakdown voltage and high reliabilityFast switching speedWide ASONPN triple diffused planar silicon transistor100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSUltrahigh deflection d

isc Silicon NPN Power Transistor 2SC3657DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 800V(Min)(BR)CEOFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switching applicationsHigh speed DC-DC converter applications.ABSOLUTE MAXIMUM RATINGS(T =25)a

isc Silicon NPN Power Transistor 2SC3638DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 500V(Min)CEO(SUS)High Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for ultrahigh-definition CRT display horizontaldeflection output applications.ABSOLUTE MAXIMUM RAT

isc Silicon NPN Power Transistor 2SC3627DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 200V(Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switching applicationsHigh speed DC-DC converter applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS

isc Silicon NPN Power Transistor 2SC3636DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 500V(Min)CEO(SUS)High Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for ultrahigh-definition CRT display horizontaldeflection output applications.ABSOLUTE MAXIMUM RAT

isc Silicon NPN Power Transistor 2SC3685DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 800V(Min)CEO(SUS)High Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for ultrahigh-definition color display horizontaldeflection output applications.ABSOLUTE MAXIMUM R

isc Silicon NPN Power Transistor 2SC3692DESCRIPTIONLow Collector Saturation Voltage: V = 0.5V(Max)@ I = 6ACE(sat) CCollector-Emitter Sustaining Voltage-: V = 60V (Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed and power switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSY

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3676DESCRIPTIONLow Collector Saturation VoltageHigh breakdown voltageSmall CobGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh voltage amplifierHigh-voltage switching applicationsDynamis focus applicationsABSOLUTE MAXIMUM RAT

isc Silicon NPN Power Transistor 2SC3659DESCRIPTIONHigh Breakdown Voltage-: V = 1700V (Min)CESBuilt-in Damper DidoeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Emitter Voltage 1700

isc Silicon NPN Power Transistor 2SC3626DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switching applicationsHigh speed DC-DC converter applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS

isc Silicon NPN Power Transistor 2SC3621DESCRIPTIONLow Collector Saturation VoltageHigh breakdown voltageComplementary to 2SA1408100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV vert.deflection output applicationColor TV class B sound output applicationABSOLUTE MAXIMUM RATINGS(T =25)

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3658DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CESBuilt-in Damper Didoe100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM

isc Silicon NPN Power Transistor 2SC3686DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 800V(Min)CEO(SUS)High Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for ultrahigh-definition color display horizontaldeflection output applications.ABSOLUTE MAXIMUM R

isc Silicon NPN Power Transistor 2SC3619DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh voltage switching and amplifier applications.Color TV horizontal driver applications.Color TV chroma output applications.ABSOL

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3675DESCRIPTIONLow Collector Saturation VoltageHigh breakdown voltageSmall CobGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh voltage amplifierHigh-voltage switching applicationsDynamis focus applicationsABSOLUTE MAXIMUM RAT

isc Silicon NPN Power Transistor 2SC3640DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 800V(Min)(BR)CEOFast SpeedHigh reliabilityAdoption of MBIT processMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switchingapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO

isc Silicon NPN Power Transistor 2SC3680DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 800V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

isc Silicon NPN Power Transistor 2SC3690DESCRIPTIONLow Collector Saturation Voltage: V = 0.5V(Max)@ I = 3ACE(sat) CCollector-Emitter Sustaining Voltage-: V = 60V (Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed and power switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSY

isc Silicon NPN Power Transistor 2SC3693DESCRIPTIONLow Collector Saturation Voltage: V = 0.5V(Max)@ I = 8ACE(sat) CCollector-Emitter Sustaining Voltage-: V = 60V (Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed and power switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSY

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3632-ZDESCRIPTIONWith TO-252(DPAK) packagingHigh collector-emitter voltageLow collector saturation voltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh voltage switching.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vo

isc Silicon NPN Power Transistor 2SC3632DESCRIPTIONHigh Collector-Emitter VoltageLow collector saturation voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh voltage switching.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 600 VCBOV Collector-Em

isc Silicon NPN Power Transistor 2SC3637DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 500V(Min)CEO(SUS)High Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for ultrahigh-definition CRT display horizontaldeflection output applications.ABSOLUTE MAXIMUM RAT

isc Silicon NPN Power Transistor 2SC3688DESCRIPTIONHigh Breakdown Voltage-: V = 1500V(Min)(BR)CBOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for ultrahigh-definition color display horizontaldeflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA