2SC36. Аналоги и основные параметры
Наименование производителя: 2SC36
Тип материала: Ge
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.14 W
Макcимально допустимое напряжение коллектор-база (Ucb): 20 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 20 V
Макcимальный постоянный ток коллектора (Ic): 0.4 A
Предельная температура PN-перехода (Tj): 75 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 9 MHz
Статический коэффициент передачи тока (hFE): 100
Корпус транзистора: R27
Аналоги (замена) для 2SC36
- подборⓘ биполярного транзистора по параметрам
2SC36 даташит
2sc3605.pdf
2SC3605 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC3605 VHF UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm FEATURES Low Noise Figure, High Gain NF = 1.1dB, S 2 = 10dB (f = 1GHz) 21e MAXIMUM RATINGS (Ta = 25 C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage VCEO 12 V Emitter-Base Voltage VEBO 3 V Col
2sc3606.pdf
2SC3606 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3606 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.1dB, S 2 = 11dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V C
2sc3607.pdf
2SC3607 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3607 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.1dB, S 2 = 9.5dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V
2sc3648.pdf
Ordering number EN1788A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1418/2SC3648 High-Voltage Switching, Predriver Applications Applications Package Dimensions Color TV audio output, inverter. unit mm 2038 Features [2SA1418/2SC3648] Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Fast switching speed. Very small size marki
2sa1407 2sc3601.pdf
Ordering number EN1766C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1407/2SC3601 Ultrahigh-Definition CRT Display Video Output Applications Applications Package Dimensions Ultrahigh-definition CRT display. unit mm Video output. 2009B Color TV chroma output. [2SA1407/2SC3601] Wide-band amp. Features High fT fT typ=400MHz. High breakdown voltage VCEO
2sc3647.pdf
Ordering number EN2006A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1417/2SC3647 High-Voltage Switching Applications Features Package Dimensions Adoption of FBET, MBIT processes. unit mm High breakdown voltage and large current capacity. 2038 Fast switching time. [2SA1417/2SC3647] Very small size making it easy to provide high- density, small-sized hybrid ICs. E
2sc3642.pdf
Ordering number EN1626C NPN Triple Diffused Planar Silicon Transistor 2SC3642 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High reliability (Adoption of HVP process). unit mm Fast speed. 2022A High breakdown voltage. [2SC3642] Adoption of MBIT process. 1 Base 2 Collector 3 Emitter SANYO TO-3PB Spe
2sc3644.pdf
Ordering number EN1628C NPN Triple Diffused Planar Silicon Transistor 2SC3644 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High reliability (Adoption of HVP process). unit mm High speed. 2022A High breakdown voltage. [2SC3644] Adoption of MBIT process. 1 Base 2 Collector 3 Emitter SANYO TO-3PB Spe
2sa1416 2sc3646.pdf
Ordering number EN2005B 2SA1416 / 2SC3646 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1416 / 2SC3646 High-Voltage Switching Applications Features Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Fast switching speed. Ultrasmall size making it easy to provide high-density, small-sized hybrid IC
2sc3687.pdf
Ordering number EN1939B NPN Triple Diffused Planar Silicon Transistor 2SC3687 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Applications Package Dimensions Ultrahigh-definition color display horizontal deflec- unit mm tion output. 2022A [2SC3687] Features Fast speed (tf typ=100ns). High breakdown voltage (VCBO=1500V). High reliability (
2sc3638.pdf
Ordering number EN1637C NPN Triple Diffused Planar Silicon Transistor 2SC3638 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High reliability (Adoption of HVP process). unit mm Fast speed. 2022A High breakdown voltage. [2SC3638] Adoption of MBIT process. 1 Base 2 Collector 3 Emitter SANYO TO-3PB Spe
2sc3651.pdf
Ordering number EN1779A NPN Epitaxial Planar Silicon Transistor 2SC3651 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions LF amplifiers, various drivers, muting circuit. unit mm 2038 Features [2SC3651] High DC current gain (hFE=500 to 2000). High breakdown voltage (VCEO 100V). Low collector-to-emitter saturation voltage
2sc3636.pdf
Ordering number EN1614C NPN Triple Diffused Planar Silicon Transistor 2SC3636 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High reliability (Adoption of HVP process). unit mm Fast speed. 2022A High breakdown voltage. [2SC3636] Adoption of MBIT process. 1 Base 2 Collector 3 Emitter SANYO TO-3PB Spe
2sc3685.pdf
Ordering number EN1937A NPN Triple Diffused Planar Silicon Transistor 2SC3685 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Applications Package Dimensions Ultrahigh-definition color display horizontal deflec- unit mm tion output. 2022A [2SC3685] Features Fast speed (tf typ=100ns). High breakdown voltage (VCBO=1500V). High reliability (
2sa1417 2sc3647.pdf
Ordering number EN2006C 2SA1417 / 2SC3647 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors High-Voltage Switching 2SA1417 / 2SC3647 Applications Features Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Ultrasmall size making it easy to provide high-density small-sized hybrid ICs. Specifications ( ) 2S
2sc3676.pdf
Ordering number EN1801E NPN Triple Diffused Planar Silicon Transistor 2SC3676 900V/300mA High-Voltage Amplifier High-Voltage Switching Applications Applications Package Dimensions High voltage amplifiers. unit mm High-voltage switching applications. 2010C Dynamic focus applications. [2SC3676] Features High breakdown voltage (VCEO min=900V). Small Cob (Cob typ=5
2sc3689.pdf
Ordering number EN1855A NPN Epitaxial Planar Silicon Transistor 2SC3689 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Low frequency general-purpose amplifiers, drivers, unit mm muting circuits. 2018A [2SC3689] Features Small Cob (Cob=1.5pF typ). Very small-sized package permitting 2SC3689-used sets to be made smaller, sl
2sc3686.pdf
Ordering number EN1938A NPN Triple Diffused Planar Silicon Transistor 2SC3686 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Applications Package Dimensions Ultrahigh-definition color display horizontal deflec- unit mm tion output. 2022A [2SC3686] Features Fast speed (tf typ=100ns). High breakdown voltage (VCBO=1500V). High reliability (
2sc3649.pdf
Ordering number EN2007A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1419/2SC3649 High-Voltage Switching Applications Features Package Dimensions Adoption of FBET, MBIT processes. unit mm High breakdown voltage and large current capacity. 2038 Very small size making it easy to provide high- [2SA1419/2SC3649] density hybrid ICs. E Emitter C Collector B Base (
2sc3675.pdf
Ordering number EN1800E NPN Triple Diffused Planar Silicon Transistor 2SC3675 900V/100mA High-Voltage Amplifier High-Voltage Switching Applications Applications Package Dimensions High voltage amplifiers. unit mm High-voltage switching applications. 2010C Dynamic focus applications. [2SC3675] Features High breakdown voltage (VCEO min=900V). Small Cob (Cob typ=2
2sc3643.pdf
Ordering number EN1627C NPN Triple Diffused Planar Silicon Transistor 2SC3643 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High reliability (Adoption of HVP process). unit mm Fast speed. 2022A High breakdown voltage. [2SC3643] Adoption of MBIT process. 1 Base 2 Collector 3 Emitter SANYO TO-3PB Spe
2sa1418 2sc3648.pdf
Ordering number EN1788B 2SA1418 / 2SC3648 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors High-Voltage Switching, 2SA1418 / 2SC3648 Preriver Applications Applications Color TV audio output, inverter. Features Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Fast switching speed. Ultrasmall siz
2sa1406 2sc3600.pdf
Ordering number EN1765A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1406/2SC3600 Ultrahigh-Definition CRT Display Video Output Applications Applications Package Dimensions Ultrahigh-definition CRT display. unit mm Video output. 2009A Color TV chroma output. [2SA1406/2SC3600] Wide-band amp. Features High fT fT typ=400MHz. High breakdown voltage VCEO
2sc3650.pdf
Ordering number EN1780A NPN Epitaxial Planar Silicon Transistor 2SC3650 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions LF amplifiers, various drivers, muting circuit. unit mm 2038 Features [2SC3650] High DC current gain (hFE=800 to 3200). Low collector-to-emitter saturation voltage (VCE(sat) 0.5V). Large current capa
2sc3661.pdf
Ordering number EN1854A NPN Epitaxial Planar Silicon Transistor 2SC3661 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Low frequency general-purpose amplifiers, drivers, unit mm muting circuit. 2018A [2SC3661] Features Very small-sized package permitting 2SC3661-used sets to be made smaller, slimmer. Adoption of FBET proc
2sc3637.pdf
Ordering number EN1615C NPN Triple Diffused Planar Silicon Transistor 2SC3637 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High reliability (Adoption of HVP process). unit mm Fast speed. 2022A High breakdown voltage. [2SC3637] Adoption of MBIT process. 1 Base 2 Collector 3 Emitter SANYO TO-3PB Spe
2sa1419 2sc3649.pdf
Ordering number EN2007B 2SA1419 / 2SC3649 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1419 / 2SC3649 High-Voltage Switching Applications Features Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Ultrasmall size making it easy to provide high-density, small-sized hybrid IC s. Specifications ( )
2sc3688.pdf
Ordering number EN1940B NPN Triple Diffused Planar Silicon Transistor 2SC3688 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Applications Package Dimensions Ultrahigh-definition color display horizontal deflec- unit mm tion output. 2022A [2SC3688] Features Fast speed (tf=100ns typ). High breakdown voltage (VCBO=1500V). High reliability (
2sc3646.pdf
Ordering number EN2005A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1416/2SC3646 High-Voltage Switching Applications Features Package Dimensions Adoption of FBET, MBIT processes. unit mm High breakdown voltage and large current capacity. 2038 Fast switching time. [2SA1416/2SC3646] Very small size making it easy to provide high- density, small-sized hybrid ICs. E
2sc3631-z.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
ne856 2sc5011 2sc5006 2sc4226 2sc3355 2sc3603 2sc3356 2sc3357 2sc3603 2sc4093.pdf
NEC's NPN SILICON HIGH NE856 FREQUENCY TRANSISTOR SERIES FEATURES HIGH GAIN BANDWIDTH PRODUCT fT = 7 GHz LOW NOISE FIGURE 1.1 dB at 1 GHz HIGH COLLECTOR CURRENT 100 mA HIGH RELIABILITY METALLIZATION 35 (MICRO-X) 00 (CHIP) LOW COST DESCRIPTION NEC's NE856 series of NPN epitaxial silicon transistors is designed for low cost amplifier and oscillator application
2sc3623 2sc3623a.pdf
DATA SHEET SILICON TRANSISTORS 2SC3623, 3623A NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND SWITCHING FEATURES PACKAGE DRAWING (UNIT mm) High hFE hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA Low VCE(sat) VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA High VEBO VEBO 12 V (2SC3623) VEBO 15 V (2SC3623A) ABSOLUTE MAXIMUM RATINGS (Ta = 25 C
2sc3663.pdf
DATA SHEET DATA SHEET SILICON TRANSISTOR 2SC3663 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FEATURES PACKAGE DIMENSIONS (in mm) Low-voltage, low-current, low-noise and high-gain 2.8 0.2 NF = 3.0 dB TYP. @VCE = 1 V, IC = 250 A, f = 1.0 GHz +0.1 1.5 0.65 0.15 GA = 3.5 dB TYP. @VCE = 1 V, IC = 250 A, f = 1.0 GHz Ideal for battery driv
2sc3603.pdf
DATA SHEET SILICON TRANSISTOR 2SC3603 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3603 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS (in mm) noise amplification at 0.5 to 4.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and E has a wide dynamic range. FEATURES 3.8 MIN. 3.8 M
2sc3604.pdf
DATA SHEET SILICON TRANSISTOR 2SC3604 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3604 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS (in mm) noise amplification at 1.0 to 6.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and E has a wide dynamic range. FEATURES 3.8 MIN. 3.8 M
2sc5012 2sc5007 2sc4227 2sc3583 2sc3604 2sc4094 ne681.pdf
NEC's NPN SILICON HIGH NE681 FREQUENCY TRANSISTOR SERIES FEATURES HIGH GAIN BANDWIDTH PRODUCT fT = 8 GHz LOW NOISE FIGURE 1.2 dB at 1 GHz 1.6 dB at 2 GHz HIGH ASSOCIATED GAIN 15 dB at 1 GHz 12 dB at 2 GHz LOW COST 00 (CHIP) 35 (MICRO-X) DESCRIPTION NEC's NE681 series of NPN epitaxial silicon transistors are designed for low noise, high gain, low cost amplifier a
2sa1416 2sc3646.pdf
DATA SHEET www.onsemi.com Bipolar Transistor ELECTRICAL CONNECTION 2 2 ( )100 V, ( )1 A, Low VCE(sat), (PNP)NPN Single PCP 1 Base 1 1 2 Collector 3 Emitter 2SA1416, 2SC3646 3 3 2SA1416 2SC3646 Features Adoption of FBET and MBIT Processes High Breakdown Voltage and Large Current Capacity Fast Switching Speed 1 2 Ultrasmall Size Making it Easy to Provi
2sa1418s 2sc3648s 2sc3648t.pdf
Ordering number EN1788C 2SA1418/2SC3648 Bipolar Transistor http //onsemi.com ( ) ( ) ( ) ( ) 160V, 0.7A, Low VCE sat , PNP NPN Single PCP Applicaitons Color TV audio output, inverter Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Fast switching speed Ultrasmall size making it easy to provide high-density, small-
2sa1416s 2sa1416t 2sc3646s 2sc3646t.pdf
Ordering number EN2005C 2SA1416/2SC3646 Bipolar Transistor http //onsemi.com ( ) ) ( ), ( 100V, ( 1A, Low VCE sat PNP)NPN Single PCP Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Fast switching speed Ultrasmall size making it easy to provide high-density, small-sized hybrid IC s Specifications ( ) 2SA1416 Absol
2sa1417 2sc3647.pdf
DATA SHEET www.onsemi.com Bipolar Transistor 1 2 (-)100 V, (-)2 A, Low VCE(sat), 3 SOT-89-3 (PNP) NPN Single PCP CASE 419AU 2SA1417, 2SC3647 ELECTRICAL CONNECTION Features 2 2 Adoption of FBET, MBIT Processes 1 Base High Breakdown Voltage and Large Current Capacity 1 1 2 Collector Ultrasmall Size Making it Easy to Provide High-density Small-sized 3 Emitter
2sa1417s 2sa1417t 2sc3647s 2sc3647t.pdf
Ordering number EN2006D 2SA1417/2SC3647 Bipolar Transistor http //onsemi.com (-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single PCP Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Fast switching speed Ultrasmall size making it easy to provide high-density small-sized hybrid ICs Specifications ( ) 2SA1417 Absolute Maximum Rati
2sa1418 2sc3648.pdf
Ordering number EN1788C 2SA1418/2SC3648 Bipolar Transistor http //onsemi.com ( ) ( ) ( ) ( ) 160V, 0.7A, Low VCE sat , PNP NPN Single PCP Applicaitons Color TV audio output, inverter Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Fast switching speed Ultrasmall size making it easy to provide high-density, small-
2sa1419s 2sa1419s-td-h 2sa1419t 2sa1419t-td-h 2sc3649s 2sc3649s-td-h 2sc3649t 2sc3649t-td-h.pdf
Ordering number EN2007C 2SA1419/2SC3649 Bipolar Transistor http //onsemi.com ( ) ( ) ( ) ( ) 160V, 1.5A, Low VCE sat , PNP NPN Single PCP Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Ultrasmall size making it easy to provide high-density, small-sized hybrid IC s Specifications ( ) 2SA1419 Absolute Maximum Ratings at
2sa1419 2sc3649.pdf
Ordering number EN2007C 2SA1419/2SC3649 Bipolar Transistor http //onsemi.com ( ) ( ) ( ) ( ) 160V, 1.5A, Low VCE sat , PNP NPN Single PCP Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Ultrasmall size making it easy to provide high-density, small-sized hybrid IC s Specifications ( ) 2SA1419 Absolute Maximum Ratings at
2sc3611.pdf
Power Transistors 2SC3611 Silicon NPN epitaxial planar type Unit mm For video amplifier 8.0+0.5 0.1 3.2 0.2 3.16 0.1 Features High transition frequency fT Small collector output capacitance Cob Wide current range TO-126B package which requires no insulation plate for installa- tion to the heat sink Absolute Maximum Ratings TC = 25 C 0.75 0.1 0.5 0.
2sc3648.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SC3648 NPN SILICON TRANSISTOR HIGH-VOLTAGE SWITCHING PREDRIVER APPLICATIONS FEATURES * High Breakdown Voltage and Large Current Capacity * Fast Switching Speed 1 * Over Current Protection Function SOT-89 ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 3 2SC3648G-x-AB3-R SOT-89 B C E Tape Reel Note Pin Ass
2sc3647.pdf
UNISONIC TECHNOLOGIES CO.,LTD 2SC3647 NPN SILICON TRANSISTOR HIGH-VOLTAGE SWITCHING APPLICATIONS FEATURES * High breakdown voltage and large current capacity * Fast switching time * Very small size marking it easy to provide high density, small-sized hybrid ICs 1 SOT-89 Lead-free 2SC3647L Halogen-free 2SC3647G ORDERING INFORMATION Ordering Number Pin Assignment
2sc3669.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SC3669 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES * Low saturation voltage VCE(SAT)=0.5V (Max.) * High speed switching time TSTG=1.0 s (Typ.) ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC3669L-x-AA3-R 2SC3669G-x-AA3-R SOT
2sc3650.pdf
2SC3650 1.2 A , 30 V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES Small Flat Package. 4 Large Current Capacity. High DC Current Gain 1 2 3 A Low VCE(sat) E C B D APPLICATION F G LF Amplifiers, Various Drivers, Muting Circuit H K J L Millimeter Mi
2sc3650.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SC3650 TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Small Flat Package High DC Current Gain 3. EMITTER Low VCE(sat) Large Current Capacity APPLICATIONS LF Amplifiers, Various Drivers, Muting Circuit MARKING CF MAXIMUM RATINGS (Ta=25 unless otherwise n
2sc3694.pdf
Power Transistors www.jmnic.com 2SC3694 Silicon NPN Transistors Features B C E With TO-220Fa package High speed ,power switching applications Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 100 V VCEO Collector to emitter voltage 60 V VEBO Emitter to base voltage 5 V IC Collector current 15 A PC Collector power dissipa
2sc3691.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC3691 DESCRIPTION With TO-220Fa package Large current ,high speed Low saturation voltage APPLICATIONS Designed for high speed and power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO C
2sc3679.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3679 DESCRIPTION With TO-3PN package High voltage switching transistor APPLICATIONS For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings (Ta=25 )
2sc3678.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC3678 ESCRIPTION High Voltage Switching With TO-3PN package APPLICATIONS Switching Regulator General Purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CON
2sc3638.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3638 DESCRIPTION With TO-3PN package High voltage ,high speed High reliability APPLICATIONS Ultrahigh-definition CRT display horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Abs
2sc3685.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3685 DESCRIPTION With TO-3PN package High breakdown voltage High reliability Fast speed APPLICATIONS Ultrahigh-definition CRT display horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3
2sc3692.pdf
Power Transistors www.jmnic.ocm 2SC3692 Silicon NPN Transistors Features B C E With TO-220Fa package High speed ,power switching applications Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 100 V VCEO Collector to emitter voltage 60 V VEBO Emitter to base voltage 5 V IC Collector current 7 A PC Collector power dissipat
2sc3658.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3658 DESCRIPTION With TO-3 package High voltage ,high speed Built-in damper diode APPLICATIONS For color TV horizontal deflection output applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PAR
2sc3686.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC3686 ESCRIPTION High breakdown voltage High reliability (adoption of HVP process). Fast speed Adoption of MBIT process. With TO-3PN package APPLICATIONS Ultrahigh-definition color display horizontal deflection output. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting ba
2sc3680.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC3680 ESCRIPTION High Voltage Switching Transistor With TO-3PN package APPLICATIONS Switching Regulator General Purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta= ) SYMBOL PA
2sc3693.pdf
Power Transistors www.jmnic.com 2SC3693 Silicon NPN Transistors Features B C E With TO-220Fa package High speed ,power switching applications Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 100 V VCEO Collector to emitter voltage 60 V VEBO Emitter to base voltage 5 V IC Collector current 10 A PC Collector power dissipa
2sc3637.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3637 DESCRIPTION With TO-3PN package High voltage ,high speed High reliability APPLICATIONS Ultrahigh-definition CRT display horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Abs
2sc3688.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3688 DESCRIPTION With TO-3PN package High breakdown voltage High speed APPLICATIONS Ultrahigh-definition color display horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute m
2sc3679.pdf
2SC3679 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switching Transistor) Application Switching Regulator and General Purpose External Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol 2SC3679 Symbol Conditions 2SC3679 Unit Unit 0.2 4.8 0.4 15.6 0.1 9.6 2.0 VCBO 900 ICBO VCB=800V 100max A V VCEO 80
2sc3678.pdf
2SC3678 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switching Transistor) Application Switching Regulator and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions MT-100(TO3P) Symbol 2SC3678 Symbol Conditions 2SC3678 Unit Unit 0.2 4.8 0.4 15.6 VCBO 900 ICBO VCB=800V 100max V A 0.1 9.6 2.0 VCEO 800
2sc3680.pdf
2SC3680 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switching Transistor) Application Switching Regulator and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions MT-100(TO3P) Symbol 2SC3680 Symbol Conditions 2SC3680 Unit Unit 0.2 4.8 0.4 15.6 VCBO 900 ICBO VCB=800V 100max A 2.0 0.1 V 9.6 VCEO 800
2sc3650.pdf
2S 3650 C SOT-89-3L TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Small Flat Package High DC Current Gain 3. EMITTER Low VCE(sat) Large Current Capacity APPLICATIONS LF Amplifiers, Various Drivers, Muting Circuit MARKING CF MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 30 V CBO V Col
2sc3679b.pdf
RoHS 2SC3679B RoHS SEMICONDUCTOR Nell High Power Products Silicon NPN triple diffusion planar transistor (High voltage switching transistor) 5A/800V/100W 15.6 0.4 4.8 0.2 9.6 2.0 0.1 3.2 0,1 TO-3P(B) 2 3 +0.2 +0.2 0.65 1.05 -0.1 -0.1 FEATURES 5.45 0.1 5.45 0.1 1.4 High-speed switching B C E High collector to base voltage VCBO Satisfactory linearity of fow
2sc3648.pdf
SMD Type Transistors NPN Transistors 2SC3648 1.70 0.1 Features High breakdown voltage and large current capacity. Fast switching speed. Complementary to 2SA1418 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 180 Collector - Emitter Voltage VCEO 160 V Emitter
2sc3647.pdf
SMD Type Transistors NPN Transistors 2SC3647 1.70 0.1 Features High breakdown voltage and large current capacity. Complementary to 2SA1417 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 100 V Emitter - Base Voltage VEBO 6 Coll
2sc3663.pdf
SMD Type Transistors NPN Transistors 2SC3663 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=5mA 1 2 Collector Emitter Voltage VCEO=8V +0.1 +0.05 0.95 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collecto
2sc3651.pdf
SMD Type Transistors NPN Transistors 2SC3651 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=0.2A Collector Emitter Voltage VCEO=100V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 100 V Emitter - Base Voltage
2sc3624.pdf
SMD Type Transistors NPN Transistors 2SC3624 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=150mA Collector Emitter Voltage VCEO=50V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Coll
2sc3618.pdf
SMD Type Transistors NPN Transistors 2SC3618 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=0.7A Collector Emitter Voltage VCEO=25V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 25 V Emitter - Base Voltage VE
2sc3689.pdf
SMD Type Transistors NPN Transistors 2SC3689 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=50V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Colle
2sc3649.pdf
SMD Type Transistors NPN Transistors 2SC3649 1.70 0.1 Features High breakdown voltage and large current capacity. Complementary to 2SA1419 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 180 Collector - Emitter Voltage VCEO 160 V Emitter - Base Voltage VEBO 6 Coll
2sc3606.pdf
SMD Type Transistors NPN Transistors 2SC3606 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=80mA 1 2 Collector Emitter Voltage VCEO=12V +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collect
2sc3645.pdf
SMD Type Transistors NPN Transistors 2SC3645 1.70 0.1 Features High breakdown voltage Excellent linearity of hFE and small Cob. Fast switching speed. 0.42 0.1 0.46 0.1 Small Package For Mounting Complementary to 2SA1415 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 18
2sc3617.pdf
SMD Type Transistors NPN Transistors 2SC3617 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=0.3A Collector Emitter Voltage VCEO=50V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VE
2sc3607.pdf
SMD Type Transistors NPN Transistors 2SC3607 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=80mA Collector Emitter Voltage VCEO=12V Marking MH 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 12 V Emitter
2sc3650.pdf
SMD Type Transistors NPN Transistors 2SC3650 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=1.2A Collector Emitter Voltage VCEO=25V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 25 V Emitter - Base Voltage VE
2sc3632-z.pdf
SMD Type Transistors NPN Transistors 2SC3632-Z TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features High voltage High speed 0.127 +0.1 0.80-0.1 max Complementary to 2SA1413-Z + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collec
2sc3661.pdf
SMD Type Transistors NPN Transistors 2SC3661 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=300mA 1 2 Collector Emitter Voltage VCEO=25V +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collec
2sc3624a.pdf
SMD Type Transistors NPN Transistors 2SC3624A SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=150mA Collector Emitter Voltage VCEO=50V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Col
2sc3646.pdf
SMD Type Transistors NPN Transistors 2SC3646 1.70 0.1 Features High breakdown voltage and large current capacity. Fast switching speed. Complementary to 2SA1416 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 100 V Emitter
2sc3677.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3677 DESCRIPTION Low Collector Saturation Voltage High breakdown voltage Good Linearity of h FE 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High voltage amplifier High-voltage switching applications Dynamis focus applications ABSOLUTE
2sc3694.pdf
isc Silicon NPN Power Transistor 2SC3694 DESCRIPTION Low Collector Saturation Voltage V = 0.5V(Max)@ I = 12A CE(sat) C Collector-Emitter Sustaining Voltage- V = 60V (Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed and power switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S
2sc3691.pdf
isc Silicon NPN Power Transistor 2SC3691 DESCRIPTION Low Collector Saturation Voltage V = 0.5V(Max)@ I = 4A CE(sat) C Collector-Emitter Sustaining Voltage- V = 60V (Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed and power switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY
2sc3679.pdf
isc Silicon NPN Power Transistor 2SC3679 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 800V(Min) (BR)CEO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER
2sc3678.pdf
isc Silicon NPN Power Transistor 2SC3678 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 800V(Min) (BR)CEO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER
2sc3631-z.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3631-Z DESCRIPTION With TO-252(DPAK) packaging Excellent linearity of h FE Low collector-to-emitter saturation voltage Fast switching speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Relay drivers High-speed inverters Converters High current switching a
2sc3642.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3642 DESCRIPTION Low Collector Saturation Voltage High breakdown voltage and high reliability Fast switching speed Wide ASO NPN triple diffused planar silicon transistor 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Ultrahigh deflection d
2sc3657.pdf
isc Silicon NPN Power Transistor 2SC3657 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 800V(Min) (BR)CEO Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a
2sc3638.pdf
isc Silicon NPN Power Transistor 2SC3638 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 500V(Min) CEO(SUS) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for ultrahigh-definition CRT display horizontal deflection output applications. ABSOLUTE MAXIMUM RAT
2sc3627.pdf
isc Silicon NPN Power Transistor 2SC3627 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 200V(Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications High speed DC-DC converter applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S
2sc3636.pdf
isc Silicon NPN Power Transistor 2SC3636 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 500V(Min) CEO(SUS) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for ultrahigh-definition CRT display horizontal deflection output applications. ABSOLUTE MAXIMUM RAT
2sc3685.pdf
isc Silicon NPN Power Transistor 2SC3685 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 800V(Min) CEO(SUS) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for ultrahigh-definition color display horizontal deflection output applications. ABSOLUTE MAXIMUM R
2sc3692.pdf
isc Silicon NPN Power Transistor 2SC3692 DESCRIPTION Low Collector Saturation Voltage V = 0.5V(Max)@ I = 6A CE(sat) C Collector-Emitter Sustaining Voltage- V = 60V (Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed and power switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY
2sc3676.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3676 DESCRIPTION Low Collector Saturation Voltage High breakdown voltage Small Cob Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High voltage amplifier High-voltage switching applications Dynamis focus applications ABSOLUTE MAXIMUM RAT
2sc3659.pdf
isc Silicon NPN Power Transistor 2SC3659 DESCRIPTION High Breakdown Voltage- V = 1700V (Min) CES Built-in Damper Didoe Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Emitter Voltage 1700
2sc3626.pdf
isc Silicon NPN Power Transistor 2SC3626 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications High speed DC-DC converter applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S
2sc3621.pdf
isc Silicon NPN Power Transistor 2SC3621 DESCRIPTION Low Collector Saturation Voltage High breakdown voltage Complementary to 2SA1408 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV vert.deflection output application Color TV class B sound output application ABSOLUTE MAXIMUM RATINGS(T =25 )
2sc3658.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3658 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CES Built-in Damper Didoe 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM
2sc3686.pdf
isc Silicon NPN Power Transistor 2SC3686 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 800V(Min) CEO(SUS) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for ultrahigh-definition color display horizontal deflection output applications. ABSOLUTE MAXIMUM R
2sc3619.pdf
isc Silicon NPN Power Transistor 2SC3619 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 300V(Min) (BR)CEO Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High voltage switching and amplifier applications. Color TV horizontal driver applications. Color TV chroma output applications. ABSOL
2sc3675.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3675 DESCRIPTION Low Collector Saturation Voltage High breakdown voltage Small Cob Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High voltage amplifier High-voltage switching applications Dynamis focus applications ABSOLUTE MAXIMUM RAT
2sc3640.pdf
isc Silicon NPN Power Transistor 2SC3640 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 800V(Min) (BR)CEO Fast Speed High reliability Adoption of MBIT process Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO
2sc3680.pdf
isc Silicon NPN Power Transistor 2SC3680 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 800V(Min) (BR)CEO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER
2sc3690.pdf
isc Silicon NPN Power Transistor 2SC3690 DESCRIPTION Low Collector Saturation Voltage V = 0.5V(Max)@ I = 3A CE(sat) C Collector-Emitter Sustaining Voltage- V = 60V (Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed and power switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY
2sc3693.pdf
isc Silicon NPN Power Transistor 2SC3693 DESCRIPTION Low Collector Saturation Voltage V = 0.5V(Max)@ I = 8A CE(sat) C Collector-Emitter Sustaining Voltage- V = 60V (Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed and power switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY
2sc3632-z.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3632-Z DESCRIPTION With TO-252(DPAK) packaging High collector-emitter voltage Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High voltage switching. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Vo
2sc3632.pdf
isc Silicon NPN Power Transistor 2SC3632 DESCRIPTION High Collector-Emitter Voltage Low collector saturation voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High voltage switching. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 600 V CBO V Collector-Em
2sc3637.pdf
isc Silicon NPN Power Transistor 2SC3637 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 500V(Min) CEO(SUS) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for ultrahigh-definition CRT display horizontal deflection output applications. ABSOLUTE MAXIMUM RAT
2sc3688.pdf
isc Silicon NPN Power Transistor 2SC3688 DESCRIPTION High Breakdown Voltage- V = 1500V(Min) (BR)CBO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for ultrahigh-definition color display horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PA
Другие транзисторы: 2SC3598D, 2SC3598E, 2SC3598F, 2SC3599, 2SC3599C, 2SC3599D, 2SC3599E, 2SC3599F, BC558, 2SC360, 2SC3600, 2SC3600C, 2SC3600D, 2SC3600E, 2SC3600F, 2SC3601, 2SC3601C
History: DTA144TET1G | LMUN2230LT1G | 2SC4680 | 2SC68M | NSBA113EDXV6T1G | DTA144ES3 | BCW77-16
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BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
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