2SC3625. Аналоги и основные параметры
Наименование производителя: 2SC3625
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 60 W
Макcимально допустимое напряжение коллектор-база (Ucb): 500 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V
Макcимальный постоянный ток коллектора (Ic): 8 A
Предельная температура PN-перехода (Tj): 125 °C
Электрические характеристики
Статический коэффициент передачи тока (hFE): 30
Корпус транзистора: TO220
Аналоги (замена) для 2SC3625
- подборⓘ биполярного транзистора по параметрам
2SC3625 даташит
8.3. Size:128K nec
2sc3623 2sc3623a.pdf 

DATA SHEET SILICON TRANSISTORS 2SC3623, 3623A NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND SWITCHING FEATURES PACKAGE DRAWING (UNIT mm) High hFE hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA Low VCE(sat) VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA High VEBO VEBO 12 V (2SC3623) VEBO 15 V (2SC3623A) ABSOLUTE MAXIMUM RATINGS (Ta = 25 C
8.8. Size:1169K kexin
2sc3624.pdf 

SMD Type Transistors NPN Transistors 2SC3624 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=150mA Collector Emitter Voltage VCEO=50V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Coll
8.9. Size:1199K kexin
2sc3624a.pdf 

SMD Type Transistors NPN Transistors 2SC3624A SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=150mA Collector Emitter Voltage VCEO=50V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Col
8.10. Size:196K inchange semiconductor
2sc3627.pdf 

isc Silicon NPN Power Transistor 2SC3627 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 200V(Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications High speed DC-DC converter applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S
8.11. Size:195K inchange semiconductor
2sc3626.pdf 

isc Silicon NPN Power Transistor 2SC3626 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications High speed DC-DC converter applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S
8.12. Size:211K inchange semiconductor
2sc3621.pdf 

isc Silicon NPN Power Transistor 2SC3621 DESCRIPTION Low Collector Saturation Voltage High breakdown voltage Complementary to 2SA1408 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV vert.deflection output application Color TV class B sound output application ABSOLUTE MAXIMUM RATINGS(T =25 )
Другие транзисторы: 2SC3620, 2SC3621, 2SC3622, 2SC3622A, 2SC3623, 2SC3623A, 2SC3624, 2SC3624A, TIP32C, 2SC3626, 2SC3627, 2SC3628, 2SC3629, 2SC363, 2SC3630, 2SC3631, 2SC3632