2SC3635. Аналоги и основные параметры
Наименование производителя: 2SC3635
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 100 W
Макcимально допустимое напряжение коллектор-база (Ucb): 900 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 500 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 15 A
Предельная температура PN-перехода (Tj): 125 °C
Электрические характеристики
Статический коэффициент передачи тока (hFE): 75
Корпус транзистора: TO247
Аналоги (замена) для 2SC3635
- подборⓘ биполярного транзистора по параметрам
2SC3635 даташит
8.1. Size:115K sanyo
2sc3638.pdf 
Ordering number EN1637C NPN Triple Diffused Planar Silicon Transistor 2SC3638 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High reliability (Adoption of HVP process). unit mm Fast speed. 2022A High breakdown voltage. [2SC3638] Adoption of MBIT process. 1 Base 2 Collector 3 Emitter SANYO TO-3PB Spe
8.2. Size:117K sanyo
2sc3636.pdf 
Ordering number EN1614C NPN Triple Diffused Planar Silicon Transistor 2SC3636 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High reliability (Adoption of HVP process). unit mm Fast speed. 2022A High breakdown voltage. [2SC3636] Adoption of MBIT process. 1 Base 2 Collector 3 Emitter SANYO TO-3PB Spe
8.3. Size:117K sanyo
2sc3637.pdf 
Ordering number EN1615C NPN Triple Diffused Planar Silicon Transistor 2SC3637 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High reliability (Adoption of HVP process). unit mm Fast speed. 2022A High breakdown voltage. [2SC3637] Adoption of MBIT process. 1 Base 2 Collector 3 Emitter SANYO TO-3PB Spe
8.4. Size:744K renesas
2sc3631-z.pdf 
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.7. Size:211K jmnic
2sc3638.pdf 
JMnic Product Specification Silicon NPN Power Transistors 2SC3638 DESCRIPTION With TO-3PN package High voltage ,high speed High reliability APPLICATIONS Ultrahigh-definition CRT display horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Abs
8.8. Size:213K jmnic
2sc3637.pdf 
JMnic Product Specification Silicon NPN Power Transistors 2SC3637 DESCRIPTION With TO-3PN package High voltage ,high speed High reliability APPLICATIONS Ultrahigh-definition CRT display horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Abs
8.9. Size:1334K kexin
2sc3632-z.pdf 
SMD Type Transistors NPN Transistors 2SC3632-Z TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features High voltage High speed 0.127 +0.1 0.80-0.1 max Complementary to 2SA1413-Z + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collec
8.10. Size:189K inchange semiconductor
2sc3631-z.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3631-Z DESCRIPTION With TO-252(DPAK) packaging Excellent linearity of h FE Low collector-to-emitter saturation voltage Fast switching speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Relay drivers High-speed inverters Converters High current switching a
8.11. Size:198K inchange semiconductor
2sc3638.pdf 
isc Silicon NPN Power Transistor 2SC3638 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 500V(Min) CEO(SUS) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for ultrahigh-definition CRT display horizontal deflection output applications. ABSOLUTE MAXIMUM RAT
8.12. Size:198K inchange semiconductor
2sc3636.pdf 
isc Silicon NPN Power Transistor 2SC3636 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 500V(Min) CEO(SUS) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for ultrahigh-definition CRT display horizontal deflection output applications. ABSOLUTE MAXIMUM RAT
8.13. Size:195K inchange semiconductor
2sc3632-z.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3632-Z DESCRIPTION With TO-252(DPAK) packaging High collector-emitter voltage Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High voltage switching. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Vo
8.14. Size:204K inchange semiconductor
2sc3632.pdf 
isc Silicon NPN Power Transistor 2SC3632 DESCRIPTION High Collector-Emitter Voltage Low collector saturation voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High voltage switching. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 600 V CBO V Collector-Em
8.15. Size:198K inchange semiconductor
2sc3637.pdf 
isc Silicon NPN Power Transistor 2SC3637 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 500V(Min) CEO(SUS) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for ultrahigh-definition CRT display horizontal deflection output applications. ABSOLUTE MAXIMUM RAT
Другие транзисторы: 2SC3628, 2SC3629, 2SC363, 2SC3630, 2SC3631, 2SC3632, 2SC3633, 2SC3634, BC547, 2SC3636, 2SC3637, 2SC3638, 2SC3639, 2SC364, 2SC3640, 2SC3641, 2SC3642
