2SC3659. Аналоги и основные параметры
Наименование производителя: 2SC3659
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 50 W
Макcимально допустимое напряжение коллектор-база (Ucb): 1700 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 800 V
Макcимальный постоянный ток коллектора (Ic): 5 A
Предельная температура PN-перехода (Tj): 175 °C
Электрические характеристики
Статический коэффициент передачи тока (hFE): 30
Корпус транзистора: TO3
Аналоги (замена) для 2SC3659
- подборⓘ биполярного транзистора по параметрам
2SC3659 даташит
..2. Size:188K inchange semiconductor
2sc3659.pdf 
isc Silicon NPN Power Transistor 2SC3659 DESCRIPTION High Breakdown Voltage- V = 1700V (Min) CES Built-in Damper Didoe Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Emitter Voltage 1700
8.3. Size:97K sanyo
2sc3651.pdf 
Ordering number EN1779A NPN Epitaxial Planar Silicon Transistor 2SC3651 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions LF amplifiers, various drivers, muting circuit. unit mm 2038 Features [2SC3651] High DC current gain (hFE=500 to 2000). High breakdown voltage (VCEO 100V). Low collector-to-emitter saturation voltage
8.5. Size:123K sanyo
2sc3650.pdf 
Ordering number EN1780A NPN Epitaxial Planar Silicon Transistor 2SC3650 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions LF amplifiers, various drivers, muting circuit. unit mm 2038 Features [2SC3650] High DC current gain (hFE=800 to 3200). Low collector-to-emitter saturation voltage (VCE(sat) 0.5V). Large current capa
8.7. Size:264K secos
2sc3650.pdf 
2SC3650 1.2 A , 30 V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES Small Flat Package. 4 Large Current Capacity. High DC Current Gain 1 2 3 A Low VCE(sat) E C B D APPLICATION F G LF Amplifiers, Various Drivers, Muting Circuit H K J L Millimeter Mi
8.8. Size:703K jiangsu
2sc3650.pdf 
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SC3650 TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Small Flat Package High DC Current Gain 3. EMITTER Low VCE(sat) Large Current Capacity APPLICATIONS LF Amplifiers, Various Drivers, Muting Circuit MARKING CF MAXIMUM RATINGS (Ta=25 unless otherwise n
8.9. Size:142K jmnic
2sc3658.pdf 
JMnic Product Specification Silicon NPN Power Transistors 2SC3658 DESCRIPTION With TO-3 package High voltage ,high speed Built-in damper diode APPLICATIONS For color TV horizontal deflection output applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PAR
8.10. Size:362K htsemi
2sc3650.pdf 
2S 3650 C SOT-89-3L TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Small Flat Package High DC Current Gain 3. EMITTER Low VCE(sat) Large Current Capacity APPLICATIONS LF Amplifiers, Various Drivers, Muting Circuit MARKING CF MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 30 V CBO V Col
8.11. Size:767K kexin
2sc3651.pdf 
SMD Type Transistors NPN Transistors 2SC3651 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=0.2A Collector Emitter Voltage VCEO=100V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 100 V Emitter - Base Voltage
8.12. Size:826K kexin
2sc3650.pdf 
SMD Type Transistors NPN Transistors 2SC3650 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=1.2A Collector Emitter Voltage VCEO=25V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 25 V Emitter - Base Voltage VE
8.13. Size:201K inchange semiconductor
2sc3657.pdf 
isc Silicon NPN Power Transistor 2SC3657 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 800V(Min) (BR)CEO Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a
8.14. Size:178K inchange semiconductor
2sc3658.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3658 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CES Built-in Damper Didoe 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM
Другие транзисторы: 2SC3651, 2SC3652, 2SC3653, 2SC3654, 2SC3655, 2SC3656, 2SC3657, 2SC3658, 2SC1815, 2SC366, 2SC3660, 2SC3661, 2SC3662, 2SC3663, 2SC3664, 2SC3665, 2SC3665O
