2SC3667Y - параметры, поиск аналогов, даташиты транзистора

Биполярный транзистор 2SC3667Y Даташит. Аналоги

   Наименование производителя: 2SC3667Y
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 1 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 30 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 1.5 A
   Предельная температура PN-перехода (Tj): 125 °C
   Граничная частота коэффициента передачи тока (ft): 120 MHz
   Статический коэффициент передачи тока (hfe): 120
   Корпус транзистора: TOSH2

Аналог (замена) для 2SC3667Y

- подбор ⓘ биполярного транзистора по параметрам

2SC3667Y Datasheet (PDF)

8.1. Size:175K toshiba
2sc3666.pdf pdf_icon

8.2. Size:217K toshiba
2sc3668.pdf pdf_icon

8.3. Size:192K toshiba
2sc3669.pdf pdf_icon

8.4. Size:175K toshiba
2sc3665.pdf pdf_icon

8.5. Size:33K sanyo
2sc3664.pdf pdf_icon

Ordering number:EN2488NPN Triple Diffused Planar Type Darlington Silicon Transistor2SC3664400V/20A Driver ApplicationsApplications Package Dimensions Induction cookers.unit:mm High-voltage, high power switching.2022A[2SC3664]Features Fast speed (adoption of MBIT process). High breakdown voltage (VCBO=800V). High reliability (adoption of HVP process).

8.6. Size:87K sanyo
2sc3661.pdf pdf_icon

Ordering number:EN1854ANPN Epitaxial Planar Silicon Transistor2SC3661High hFE, Low-FrequencyGeneral-Purpose Amplifier ApplicationsApplications Package Dimensions Low frequency general-purpose amplifiers, drivers,unit:mmmuting circuit.2018A[2SC3661]Features Very small-sized package permitting 2SC3661-usedsets to be made smaller, slimmer. Adoption of FBET proc

8.7. Size:110K nec
2sc3663.pdf pdf_icon

DATA SHEETDATA SHEETSILICON TRANSISTOR2SC3663NPN EPITAXIAL SILICON TRANSISTORFOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATIONFEATURESPACKAGE DIMENSIONS (in mm) Low-voltage, low-current, low-noise and high-gain2.8 0.2NF = 3.0 dB TYP. @VCE = 1 V, IC = 250 A, f = 1.0 GHz+0.11.5 0.650.15GA = 3.5 dB TYP. @VCE = 1 V, IC = 250 A, f = 1.0 GHz Ideal for battery driv

8.8. Size:270K utc
2sc3669.pdf pdf_icon

UNISONIC TECHNOLOGIES CO., LTD 2SC3669 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES * Low saturation voltage VCE(SAT)=0.5V (Max.) * High speed switching time: TSTG=1.0s (Typ.) ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC3669L-x-AA3-R 2SC3669G-x-AA3-R SOT

8.9. Size:1389K kexin
2sc3663.pdf pdf_icon

SMD Type TransistorsNPN Transistors2SC3663SOT-23Unit: mm2.9+0.1-0.1+0.10.4 -0.13 Features Collector Current Capability IC=5mA1 2 Collector Emitter Voltage VCEO=8V+0.1+0.050.95 -0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collecto

8.10. Size:947K kexin
2sc3661.pdf pdf_icon

SMD Type TransistorsNPN Transistors2SC3661SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=300mA1 2 Collector Emitter Voltage VCEO=25V+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collec

Другие транзисторы... 2SC3665 , 2SC3665O , 2SC3665Y , 2SC3666 , 2SC3666O , 2SC3666Y , 2SC3667 , 2SC3667O , A1013 , 2SC3668 , 2SC3668O , 2SC3668Y , 2SC3669 , 2SC3669O , 2SC3669Y , 2SC366G , 2SC366GO .