2SC3671B. Аналоги и основные параметры
Наименование производителя: 2SC3671B
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 1 W
Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 20 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 8 V
Макcимальный постоянный ток коллектора (Ic): 5 A
Предельная температура PN-перехода (Tj): 125 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 100 MHz
Ёмкость коллекторного перехода (Cc): 40 pf
Статический коэффициент передачи тока (hFE): 200
Корпус транзистора: TOSH2
Аналоги (замена) для 2SC3671B
- подборⓘ биполярного транзистора по параметрам
2SC3671B даташит
8.4. Size:96K sanyo
2sc3676.pdf 
Ordering number EN1801E NPN Triple Diffused Planar Silicon Transistor 2SC3676 900V/300mA High-Voltage Amplifier High-Voltage Switching Applications Applications Package Dimensions High voltage amplifiers. unit mm High-voltage switching applications. 2010C Dynamic focus applications. [2SC3676] Features High breakdown voltage (VCEO min=900V). Small Cob (Cob typ=5
8.5. Size:97K sanyo
2sc3675.pdf 
Ordering number EN1800E NPN Triple Diffused Planar Silicon Transistor 2SC3675 900V/100mA High-Voltage Amplifier High-Voltage Switching Applications Applications Package Dimensions High voltage amplifiers. unit mm High-voltage switching applications. 2010C Dynamic focus applications. [2SC3675] Features High breakdown voltage (VCEO min=900V). Small Cob (Cob typ=2
8.6. Size:178K jmnic
2sc3679.pdf 
JMnic Product Specification Silicon NPN Power Transistors 2SC3679 DESCRIPTION With TO-3PN package High voltage switching transistor APPLICATIONS For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings (Ta=25 )
8.7. Size:93K jmnic
2sc3678.pdf 
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC3678 ESCRIPTION High Voltage Switching With TO-3PN package APPLICATIONS Switching Regulator General Purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CON
8.8. Size:25K sanken-ele
2sc3679.pdf 
2SC3679 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switching Transistor) Application Switching Regulator and General Purpose External Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol 2SC3679 Symbol Conditions 2SC3679 Unit Unit 0.2 4.8 0.4 15.6 0.1 9.6 2.0 VCBO 900 ICBO VCB=800V 100max A V VCEO 80
8.9. Size:24K sanken-ele
2sc3678.pdf 
2SC3678 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switching Transistor) Application Switching Regulator and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions MT-100(TO3P) Symbol 2SC3678 Symbol Conditions 2SC3678 Unit Unit 0.2 4.8 0.4 15.6 VCBO 900 ICBO VCB=800V 100max V A 0.1 9.6 2.0 VCEO 800
8.10. Size:218K nell
2sc3679b.pdf 
RoHS 2SC3679B RoHS SEMICONDUCTOR Nell High Power Products Silicon NPN triple diffusion planar transistor (High voltage switching transistor) 5A/800V/100W 15.6 0.4 4.8 0.2 9.6 2.0 0.1 3.2 0,1 TO-3P(B) 2 3 +0.2 +0.2 0.65 1.05 -0.1 -0.1 FEATURES 5.45 0.1 5.45 0.1 1.4 High-speed switching B C E High collector to base voltage VCBO Satisfactory linearity of fow
8.11. Size:185K inchange semiconductor
2sc3677.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3677 DESCRIPTION Low Collector Saturation Voltage High breakdown voltage Good Linearity of h FE 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High voltage amplifier High-voltage switching applications Dynamis focus applications ABSOLUTE
8.12. Size:199K inchange semiconductor
2sc3679.pdf 
isc Silicon NPN Power Transistor 2SC3679 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 800V(Min) (BR)CEO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER
8.13. Size:199K inchange semiconductor
2sc3678.pdf 
isc Silicon NPN Power Transistor 2SC3678 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 800V(Min) (BR)CEO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER
8.14. Size:183K inchange semiconductor
2sc3676.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3676 DESCRIPTION Low Collector Saturation Voltage High breakdown voltage Small Cob Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High voltage amplifier High-voltage switching applications Dynamis focus applications ABSOLUTE MAXIMUM RAT
8.15. Size:184K inchange semiconductor
2sc3675.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3675 DESCRIPTION Low Collector Saturation Voltage High breakdown voltage Small Cob Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High voltage amplifier High-voltage switching applications Dynamis focus applications ABSOLUTE MAXIMUM RAT
Другие транзисторы: 2SC367, 2SC3670, 2SC3670A, 2SC3670B, 2SC3670C, 2SC3670D, 2SC3671, 2SC3671A, TIP2955, 2SC3671C, 2SC3671D, 2SC3672, 2SC3672O, 2SC3672Y, 2SC3673, 2SC3674, 2SC3675
