Справочник транзисторов. 2SC369GV

 

Биполярный транзистор 2SC369GV - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SC369GV
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.2 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 40 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 125 °C
   Граничная частота коэффициента передачи тока (ft): 50 MHz
   Ёмкость коллекторного перехода (Cc): 3 pf
   Статический коэффициент передачи тока (hfe): 600
   Корпус транзистора: TO92

 Аналоги (замена) для 2SC369GV

 

 

2SC369GV Datasheet (PDF)

 8.1. Size:27K  jmnic
2sc3694.pdf

2SC369GV

Power Transistors www.jmnic.com 2SC3694 Silicon NPN Transistors Features B C E With TO-220Fa package High speed ,power switching applications Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNITVCBO Collector to base voltage 100 V VCEO Collector to emitter voltage 60 V VEBO Emitter to base voltage 5 V IC Collector current 15 A PC Collector power dissipa

 8.2. Size:303K  jmnic
2sc3691.pdf

2SC369GV
2SC369GV

Product Specification www.jmnic.comSilicon NPN Power Transistors 2SC3691 DESCRIPTION With TO-220Fa package Large current ,high speed Low saturation voltage APPLICATIONS Designed for high speed and power switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO C

 8.3. Size:29K  jmnic
2sc3692.pdf

2SC369GV

Power Transistors www.jmnic.ocm 2SC3692 Silicon NPN Transistors Features B C E With TO-220Fa package High speed ,power switching applications Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNITVCBO Collector to base voltage 100 V VCEO Collector to emitter voltage 60 V VEBO Emitter to base voltage 5 V IC Collector current 7 A PC Collector power dissipat

 8.4. Size:28K  jmnic
2sc3693.pdf

2SC369GV

Power Transistors www.jmnic.com 2SC3693 Silicon NPN Transistors Features B C E With TO-220Fa package High speed ,power switching applications Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNITVCBO Collector to base voltage 100 V VCEO Collector to emitter voltage 60 V VEBO Emitter to base voltage 5 V IC Collector current 10 A PC Collector power dissipa

 8.5. Size:203K  inchange semiconductor
2sc3694.pdf

2SC369GV
2SC369GV

isc Silicon NPN Power Transistor 2SC3694DESCRIPTIONLow Collector Saturation Voltage: V = 0.5V(Max)@ I = 12ACE(sat) CCollector-Emitter Sustaining Voltage-: V = 60V (Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed and power switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS

 8.6. Size:206K  inchange semiconductor
2sc3691.pdf

2SC369GV
2SC369GV

isc Silicon NPN Power Transistor 2SC3691DESCRIPTIONLow Collector Saturation Voltage: V = 0.5V(Max)@ I = 4ACE(sat) CCollector-Emitter Sustaining Voltage-: V = 60V (Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed and power switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSY

 8.7. Size:205K  inchange semiconductor
2sc3692.pdf

2SC369GV
2SC369GV

isc Silicon NPN Power Transistor 2SC3692DESCRIPTIONLow Collector Saturation Voltage: V = 0.5V(Max)@ I = 6ACE(sat) CCollector-Emitter Sustaining Voltage-: V = 60V (Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed and power switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSY

 8.8. Size:201K  inchange semiconductor
2sc3690.pdf

2SC369GV
2SC369GV

isc Silicon NPN Power Transistor 2SC3690DESCRIPTIONLow Collector Saturation Voltage: V = 0.5V(Max)@ I = 3ACE(sat) CCollector-Emitter Sustaining Voltage-: V = 60V (Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed and power switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSY

 8.9. Size:207K  inchange semiconductor
2sc3693.pdf

2SC369GV
2SC369GV

isc Silicon NPN Power Transistor 2SC3693DESCRIPTIONLow Collector Saturation Voltage: V = 0.5V(Max)@ I = 8ACE(sat) CCollector-Emitter Sustaining Voltage-: V = 60V (Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed and power switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSY

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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