Справочник транзисторов. 2SC3711

 

Биполярный транзистор 2SC3711 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SC3711
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.2 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 200 MHz
   Статический коэффициент передачи тока (hfe): 120
   Корпус транзистора: TO126

 Аналоги (замена) для 2SC3711

 

 

2SC3711 Datasheet (PDF)

 8.1. Size:213K  toshiba
2sc3710.pdf

2SC3711
2SC3711

 8.2. Size:224K  toshiba
2sc3710a.pdf

2SC3711
2SC3711

 8.3. Size:30K  jmnic
2sc3710.pdf

2SC3711

Power Transistors www.jmnic.com 2SC3710 Silicon NPN Transistors Features B C E With TO-220Fa package Complement to type 2SA1452 Hihg current switching applications Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNITVCBO Collector to base voltage 80 V VCEO Collector to emitter voltage 80 V VEBO Emitter to base voltage 6 V IB Base current 2 A IC Colle

 8.4. Size:601K  shindengen
2sc3714.pdf

2SC3711

 8.5. Size:177K  cn sptech
2sc3710o 2sc3710y.pdf

2SC3711
2SC3711

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC3710DESCRIPTIONLow Collector Saturation Voltage-: V = 0.4V(Max)@I = 6ACE(sat) CGood Linearity of hFEHigh Switching SpeedComplement to Type 2SA1452APPLICATIONSDesigned for high current switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Volta

 8.6. Size:210K  inchange semiconductor
2sc3719.pdf

2SC3711
2SC3711

isc Silicon NPN Power Transistor 2SC3719DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 800V (Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching and horizontal deflectionoutput applications.ABSOLUTE MAXIMUM RATINGS(T =2

 8.7. Size:202K  inchange semiconductor
2sc3710.pdf

2SC3711
2SC3711

isc Silicon NPN Power Transistor 2SC3710DESCRIPTIONLow Collector Saturation Voltage-: V = 0.4V(Max)@I = 6ACE(sat) CGood Linearity of hFEHigh Switching SpeedComplement to Type 2SA1452Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)

 8.8. Size:197K  inchange semiconductor
2sc3710a.pdf

2SC3711
2SC3711

isc Silicon NPN Power Transistor 2SC3710ADESCRIPTIONLow Collector Saturation Voltage-: V = 0.4V(Max)@I = 6ACE(sat) CGood Linearity of hFEComplement to Type 2SA1452AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA

 8.9. Size:196K  inchange semiconductor
2sc3714.pdf

2SC3711
2SC3711

isc Silicon NPN Power Transistor 2SC3714DESCRIPTIONHigh Switching SpeedHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 500 VCBOV Collector-Emitter Voltage 400 VCEOV Emitter-Base

Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
Back to Top