2SC3729. Аналоги и основные параметры
Наименование производителя: 2SC3729
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 50 W
Макcимально допустимое напряжение коллектор-база (Ucb): 1500 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 800 V
Макcимальный постоянный ток коллектора (Ic): 5 A
Предельная температура PN-перехода (Tj): 125 °C
Электрические характеристики
Статический коэффициент передачи тока (hFE): 30
Корпус транзистора: TO218
Аналоги (замена) для 2SC3729
- подборⓘ биполярного транзистора по параметрам
2SC3729 даташит
..1. Size:196K inchange semiconductor
2sc3729.pdf 
isc Silicon NPN Power Transistor 2SC3729 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 800V(Min) (BR)CEO Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collect
8.4. Size:70K isahaya
2sc3728.pdf 
ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to persona
8.5. Size:416K jmnic
2sc3720.pdf 
Product Specification Silicon NPN Power Transistor 2SC3720 DESCRIPTION High Collector-Emitter Breakdown Voltage- V(BR)CEO= 800V (Min) High Switching Speed Wide Area of Safe Operation APPLICATIONS Designed for high speed switching and horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Volt
8.6. Size:151K jmnic
2sc3725.pdf 
JMnic Product Specification Silicon NPN Power Transistors 2SC3725 DESCRIPTION With TO-3PN package High voltage ,high speed switching High reliability APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1
8.7. Size:242K jmnic
2sc3723.pdf 
JMnic Product Specification Silicon NPN Power Transistors 2SC3723 DESCRIPTION With TO-220C package High voltage ,high speed switching High reliability APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Ab
8.8. Size:207K inchange semiconductor
2sc3720.pdf 
isc Silicon NPN Power Transistor 2SC3720 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 800V (Min) (BR)CEO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching and horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =2
8.9. Size:198K inchange semiconductor
2sc3725.pdf 
isc Silicon NPN Power Transistor 2SC3725 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers ABSOLUTE MAXI
8.10. Size:195K inchange semiconductor
2sc3723.pdf 
isc Silicon NPN Power Transistor 2SC3723 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers ABSOLUTE MAXI
Другие транзисторы: 2SC3722, 2SC3722K, 2SC3723, 2SC3724, 2SC3725, 2SC3726, 2SC3727, 2SC3728, D209L, 2SC372G, 2SC372GO, 2SC372GY, 2SC372O, 2SC372Y, 2SC373, 2SC3730, 2SC3731
