Биполярный транзистор 2SC3733 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC3733
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 1 W
Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
Макcимальный постоянный ток коллектора (Ic): 1 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 55
Корпус транзистора: TO92MOD
2SC3733 Datasheet (PDF)
2sc3736.pdf
DATA SHEETSILICON TRANSISTOR2SC3736HIGH SPEED SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION PACKAGE DRAWING (Unit: mm) The 2SC3736 is designed for power amplifier and high speed 4.5 0.1switching applications. 1.6 0.2 1.5 0.1FEATURES High speed, high voltage switching Low collector saturation voltage 2 Complementary to the
2sc3735.pdf
SMD Type TransistorsNPN Transistors2SC3735SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13 Features Collector Current Capability IC=200mA Collector Emitter Voltage VCEO=15V 1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collec
2sc3736.pdf
SMD Type TransistorsNPN Transistors2SC37361.70 0.1 Features High Speed,High Voltage Switching Low Collector Saturation Voltage Complementary to 2SA14630.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 80 Collector - Emitter Voltage VCEO 45 V Emitter - Base V
2sc3734.pdf
SMD Type TransistorsNPN Transistors2SC3734SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features High Speed: tstg
2sc3739.pdf
SMD Type TransistorsNPN Transistors2SC3739SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features High Gain Bandwidth Product:fT=200MHz(min) Complementary to 2SA14641 2+0.1+0.050.95 -0.1 0.1-0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector
2sc3738.pdf
isc Silicon NPN Power Transistor 2SC3738DESCRIPTIONHigh Voltage, High Speed SwitchingWide Area of Safe OperationGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching and horizontal deflectionoutput applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU
2sc3737.pdf
isc Silicon NPN Power Transistor 2SC3737DESCRIPTIONHigh Collector-Base Breakdown Voltage-: V = 800V(Min)(BR)CBOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching and horizontal deflectionoutput applications.ABSOLUTE MAXIMUM RATINGS(T =25
Другие транзисторы... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050