2SC3739. Аналоги и основные параметры
Наименование производителя: 2SC3739
Маркировка: B12_B13_B14
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 1 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимальный постоянный ток коллектора (Ic): 0.5 A
Предельная температура PN-перехода (Tj): 125 °C
Электрические характеристики
Статический коэффициент передачи тока (hFE): 65
Корпус транзистора: TO236
Аналоги (замена) для 2SC3739
- подборⓘ биполярного транзистора по параметрам
2SC3739 даташит
..2. Size:2345K kexin
2sc3739.pdf 
SMD Type Transistors NPN Transistors 2SC3739 SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features High Gain Bandwidth Product fT=200MHz(min) Complementary to 2SA1464 1 2 +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector
8.3. Size:161K nec
2sc3736.pdf 
DATA SHEET SILICON TRANSISTOR 2SC3736 HIGH SPEED SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION PACKAGE DRAWING (Unit mm) The 2SC3736 is designed for power amplifier and high speed 4.5 0.1 switching applications. 1.6 0.2 1.5 0.1 FEATURES High speed, high voltage switching Low collector saturation voltage 2 Complementary to the
8.7. Size:1125K kexin
2sc3735.pdf 
SMD Type Transistors NPN Transistors 2SC3735 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=200mA Collector Emitter Voltage VCEO=15V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collec
8.8. Size:1341K kexin
2sc3736.pdf 
SMD Type Transistors NPN Transistors 2SC3736 1.70 0.1 Features High Speed,High Voltage Switching Low Collector Saturation Voltage Complementary to 2SA1463 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 80 Collector - Emitter Voltage VCEO 45 V Emitter - Base V
8.9. Size:1621K kexin
2sc3734.pdf 
SMD Type Transistors NPN Transistors 2SC3734 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features High Speed tstg
8.10. Size:197K inchange semiconductor
2sc3738.pdf 
isc Silicon NPN Power Transistor 2SC3738 DESCRIPTION High Voltage, High Speed Switching Wide Area of Safe Operation Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching and horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU
8.11. Size:195K inchange semiconductor
2sc3737.pdf 
isc Silicon NPN Power Transistor 2SC3737 DESCRIPTION High Collector-Base Breakdown Voltage- V = 800V(Min) (BR)CBO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching and horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25
Другие транзисторы: 2SC3731, 2SC3732, 2SC3733, 2SC3734, 2SC3735, 2SC3736, 2SC3737, 2SC3738, TIP142, 2SC373G, 2SC374, 2SC3740, 2SC3741, 2SC3742, 2SC3743, 2SC3744, 2SC3745
