Справочник транзисторов. 2SC3747R

 

Биполярный транзистор 2SC3747R - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SC3747R
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 25 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 7 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 100 MHz
   Статический коэффициент передачи тока (hfe): 100
   Корпус транзистора: TO220F

 Аналоги (замена) для 2SC3747R

 

 

2SC3747R Datasheet (PDF)

 7.1. Size:95K  sanyo
2sa1470 2sc3747.pdf

2SC3747R
2SC3747R

Ordering number:EN1972APNP/NPN Epitaxial Planar Silicon Transistors2SA1470/2SC374760V/7A High-Speed Switching ApplicationsApplications Package Dimensions Inductance, lamp drivers.unit:mm Inveters, conveters (strobes, flashes, FLT lighting2041circiuts).[2SA1470/2SC3747] Power amplifiers (high-power car stereos, motorcontrol). High-speed switching (switching

 7.2. Size:211K  inchange semiconductor
2sc3747.pdf

2SC3747R
2SC3747R

isc Silicon NPN Power Transistor 2SC3747DESCRIPTIONGood Linearity of hFEHigh Switching SpeedLow Collector Saturation VoltageComplement to Type 2SA1470Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSInductance, lamp driversInverters, convertersPower amplifiersHigh-speed switching applications.ABSOLUTE MAXI

 8.1. Size:100K  sanyo
2sc3749.pdf

2SC3747R
2SC3747R

Ordering number:EN1968ANPN Triple Diffused Planar Silicon Transistor2SC3749500V/3A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage and high reliability.unit:mm Fast switching speed.2041A Wide ASO.[2SC3749] Adoption of MBIT process. Micaless package facilitating mounting.1 : Base2 : Collector3 : EmitterSANYO : TO-2

 8.2. Size:101K  sanyo
2sa1469 2sc3746.pdf

2SC3747R
2SC3747R

Ordering number:EN1973APNP/NPN Epitaxial Planar Silicon Transistors2SA1469/2SC374660V/5A High-Speed Switching ApplicationsApplications Package Dimensions Various inductance lamp drivers for electricalunit:mmequipment.2041 Inverters, converters (strobo, flash, fluorescent lamp[2SA1469/2SC3746]lighting circuit). Power amp (high power car stereo, motor controller).

 8.3. Size:94K  sanyo
2sa1471 2sc3748.pdf

2SC3747R
2SC3747R

Ordering number:EN2001APNP/NPN Epitaxial Planar Silicon Transistors2SA1471/2SC374860V/10A High-Speed Switching ApplicationsApplications Package Dimensions Car-use inductance drivers, lamp drivers.unit:mm Inverters drivers, conveters (strobes, flashes, FLT2041lighting circuits).[2SA1471/2SC3748] Power amplifiers (high-power car stereos, motorcontrol). High-s

 8.4. Size:56K  panasonic
2sc3743.pdf

2SC3747R
2SC3747R

Power Transistors2SC3743Silicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm10.0 0.2 4.2 0.25.5 0.2 2.7 0.2FeaturesHigh-speed switching 3.1 0.1Wide area of safe operation (ASO) with high breakdown voltageSatisfactory linearity of foward current transfer ratio hFEFull-pack package which can be installed to the heat si

 8.5. Size:190K  jmnic
2sc3746.pdf

2SC3747R
2SC3747R

JMnic Product Specification Silicon NPN Power Transistors 2SC3746 DESCRIPTION With TO-220F package Complement to type 2SA1469 Low saturation voltage Excellent current dependence of hFE Short switching time APPLICATIONS Various inductance of lamp drivers for electronic equipment Inverters ,converters Switching regulator ,driver PINNING PIN DESCRIPTION

 8.6. Size:214K  inchange semiconductor
2sc3749.pdf

2SC3747R
2SC3747R

isc Silicon NPN Power Transistor 2SC3749DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 500V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

 8.7. Size:212K  inchange semiconductor
2sc3743.pdf

2SC3747R
2SC3747R

isc Silicon NPN Power Transistor 2SC3743DESCRIPTION Collector-Emiiter Breakdown Voltage-: V = 800V(Min.)(BR)CEOWide Area of Safe OperationHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UN

 8.8. Size:204K  inchange semiconductor
2sc3746.pdf

2SC3747R
2SC3747R

isc Silicon NPN Power Transistor 2SC3746DESCRIPTIONGood Linearity of hFEHigh Switching SpeedLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSVarious inductance lamp drivers for electrical equipmentInverters, convertersPower amplifiersHigh-speed switching applications.ABSOLUTE MA

 8.9. Size:211K  inchange semiconductor
2sc3748.pdf

2SC3747R
2SC3747R

isc Silicon NPN Power Transistor 2SC3748DESCRIPTIONGood Linearity of hFEHigh Switching SpeedLow Collector Saturation VoltageComplement to Type 2SA1471Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSInductance, lamp driversInverters, convertersPower amplifiersHigh-speed switching applications.ABSOLUTE MAXI

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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