Справочник транзисторов. 2SC3760

 

Биполярный транзистор 2SC3760 - описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2SC3760

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 60 W

Макcимально допустимое напряжение коллектор-база (Ucb): 500 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V

Макcимальный постоянный ток коллектора (Ic): 10 A

Предельная температура PN-перехода (Tj): 150 °C

Статический коэффициент передачи тока (hfe): 100

Корпус транзистора: TO218

Аналоги (замена) для 2SC3760

 

 

2SC3760 Datasheet (PDF)

4.1. 2sc3769.pdf Size:34K _hitachi

2SC3760

4.2. 2sc3762.pdf Size:116K _inchange_semiconductor

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2SC3760

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3762 DESCRIPTION Ў¤ With TO-3PML package Ў¤ High speed switching Ў¤ High current capability APPLICATIONS Ў¤ For use in high speed and power switching applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings (Ta=25Ўж

 5.1. 2sc3794a.pdf Size:100K _update

2SC3760
2SC3760

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3794 2SC3794A DESCRIPTION ··With TO-220Fa package ·High VCBO ·High speed switching ·Low collector saturation voltage APPLICATIONS ·For high speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute maximum

5.2. 2sc3790 3da3790.pdf Size:176K _update

2SC3760
2SC3760

2SC3790(3DA3790) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于高清显示器的视频输出。 Purpose: High-definition CRT display video output applications. 特点:击穿电压高,反向传输电容小,极好的高频特性。 Features: High breakdown voltage, small reverse transfer capacitance and excellent high frequency characteristic. 极限参数/Absolu

 5.3. 2sc3788 3da3788.pdf Size:213K _update

2SC3760
2SC3760

2SC3788(3DA3788) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 用于高清晰 CRT 显示器的视频输出。 Purpose: High-definition CRT display video output applications. 特点:击穿电压高,反向传输电容小和极好的高频特性,与 2SA1478(3CA1478)互补。 Features: High breakdown voltage, small reverse transfer capacitance and excellent high frequenc

5.4. 2sc3709.pdf Size:213K _toshiba

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2SC3760



 5.5. 2sc3710.pdf Size:213K _toshiba

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5.6. 2sc3783.pdf Size:170K _toshiba

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5.7. 2sc3709a.pdf Size:142K _toshiba

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2SC3709A TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3709A High-Current Switching Applications Unit: mm • Low collector saturation voltage: V = 0.4 V (max) CE (sat) • High-speed switching: tstg = 1.0 µs (typ.) • Complementary to 2SA1451A Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitt

5.8. 2sc3710a.pdf Size:224K _toshiba

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2SC3760



5.9. 2sc3750.pdf Size:100K _sanyo

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2SC3760

Ordering number:EN1969A NPN Triple Diffused Planar Silicon Transistor 2SC3750 500V/5A Switching Regulator Applications Features Package Dimensions High breakdown voltage and high reliability. unit:mm Fast switching speed. 2041A Wide ASO. [2SC3750] Adoption of MBIT process. Micaless package facilitating mounting. 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220ML Sp

5.10. 2sc3705.pdf Size:94K _sanyo

2SC3760
2SC3760

Ordering number:EN2146B NPN Epitaxial Planar Silicon Darlington Transistor 2SC3705 Printer Driver Applications Applications Package Dimensions Switching of L load (motor drivers, printer drivers, unit:mm relay drivers). 2009B [2SC3705] Features High DC current gain. Large current capacityu and wide ASO. Contains a Zener diode across collector and base. 1 : Emitter JEDEC

5.11. 2sc3752.pdf Size:102K _sanyo

2SC3760
2SC3760

Ordering number:EN1971A NPN Triple Diffused Planar Silicon Transistor 2SC3752 800V/3A Switching Regulator Applications Features Package Dimensions High breakdown voltage and high reliability. unit:mm Fast switching speed. 2041A Wide ASO. [2SC3752] Adoption of MBIT process. Micaless package facilitating mounting. 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220ML Sp

5.12. 2sc3784.pdf Size:81K _sanyo

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2SC3760

5.13. 2sc3778.pdf Size:125K _sanyo

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2SC3760

Ordering number:EN1951B NPN Epitaxial Planar Silicon Transistor 2SC3778 UHF Low-Noise Amplifier, Wide-Band Amplifier Applications Applications Package Dimensions UHF low-noise amplifiers, wide-band amplifiers. unit:mm 2004A Features [2SC3778] Small noise figure : NF=2.2dB typ (f=0.9GHz). High power gain : MAG=14dB typ (f=0.9GHz). High cutoff frequency : fT=5.0GHz typ. C : Coll

5.14. 2sc3777.pdf Size:126K _sanyo

2SC3760
2SC3760

Ordering number:EN1950B NPN Epitaxial Planar Silicon Transistor 2SC3777 UHF Oscillator, Mixer, Low-Noise Amplifier, Wide-Band Amplifier Applications Applications Package Dimensions UHF frequency converters, local oscillators, low- unit:mm noise amplifiers, wide-band amplifiers. 2004A [2SC3777] Features Small noise figure : NF=3.0dB typ (f=0.9GHz). High power gain : MAG=12dB typ

5.15. 2sc3792.pdf Size:84K _sanyo

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5.16. 2sc3779.pdf Size:99K _sanyo

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5.17. 2sc3782.pdf Size:114K _sanyo

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Ordering number:EN2528A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1476/2SC3782 Ultrahigh-Definition CRT Display Video Output Applications Applications Package Dimensions Video output. unit:mm Color TV chroma output. 2010C Wide-band amp. [2SA1476/2SC3782] Features High fT (fT typ=400MHz). High breakdown voltage (VCEO? 200V). Small reverse transfer capacitance

5.18. 2sc3772.pdf Size:128K _sanyo

2SC3760
2SC3760

Ordering number:EN1945B NPN Epitaxial Planar Silicon Transistor 2SC3772 UHF Oscillator, Mixer, Low-Noise Amplifier, Wide-Band Amplifier Applications Applications Package Dimensions UHF frequency converters, local oscillators, low- unit:mm noise amplifiers, wide-band amplifiers. 2018A [2SC3772] Features Small noise figure : NF=2.5dB typ (f=0.9GHz). High power gain : MAG=12dB typ

5.19. 2sc3751.pdf Size:27K _sanyo

2SC3760
2SC3760

Ordering number : ENN1970B 2SC3751 NPN Triple Diffused Planar Silicon Transistor 2SC3751 800V / 1.5A Switching Regulator Applications Features Package Dimensions High breakdown voltage and high reliability. unit : mm Fast switching speed. 2041A Wide ASO. [2SC3751] Adoption of MBIT process. 4.5 Micaless package facilitating mounting. 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75

5.20. 2sc3773.pdf Size:125K _sanyo

2SC3760
2SC3760

Ordering number:EN1946B NPN Epitaxial Planar Silicon Transistor 2SC3773 UHF Oscillator, Mixer, Low-Noise Amplifier, Wide-Band Amplifier Applications Applications Package Dimensions UHF frequency converters, local oscillators, low- unit:mm noise amplifiers, wide-band amplifiers. 2018A [2SC3773] Features Small noise figure : NF=3.0dB typ (f=0.9GHz). High power gain : MAG=12dB typ

5.21. 2sc3747.pdf Size:95K _sanyo

2SC3760
2SC3760

Ordering number:EN1972A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1470/2SC3747 60V/7A High-Speed Switching Applications Applications Package Dimensions Inductance, lamp drivers. unit:mm Inveters, conveters (strobes, flashes, FLT lighting 2041 circiuts). [2SA1470/2SC3747] Power amplifiers (high-power car stereos, motor control). High-speed switching (switching regulat

5.22. 2sc3787.pdf Size:135K _sanyo

2SC3760
2SC3760

Ordering number:EN2089B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1477/2SC3787 160V/140mA Switching Applications Applications Package Dimensions Predrivers for 100W power amplifiers. unit:mm 2042B Features [2SA1477/2SC3787] Adoption of FBET process. Excellent linearity of hFE. Small Cob. Plastic-convered heat sink facilitating high-density mounting (TO-126ML packag

5.23. 2sc3790.pdf Size:175K _sanyo

2SC3760
2SC3760

Ordering number:EN2254 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1480/2SC3790 High-Definiton CRT Display Video Output Applications Features Package Dimensions High breakdown voltage (VCEO? 300V). unit:mm Small reverse transfer capacitance and excellent high 2042A frequency characteristic [2SA1480/2SC3790] : Cre=1.8pF (NPN), 2.3pF (PNP). Adoption of MBIT process. B : Ba

5.24. 2sc3775.pdf Size:125K _sanyo

2SC3760
2SC3760

Ordering number:EN1948B NPN Epitaxial Planar Silicon Transistor 2SC3775 UHF Low-Noise Amplifier, Wide-Band Amplifier Applications Applications Package Dimensions UHF low-noise amplifiers, wide-band amplifiers. unit:mm 2018A Features [2SC3775] Small noise figure : NF=1.5dB typ (f=0.9GHz). High power gain : MAG=14dB typ (f=0.9GHz). High cutoff frequency : fT=5.0GHz typ. C : Coll

5.25. 2sc3770.pdf Size:74K _sanyo

2SC3760
2SC3760

Ordering number:EN2095A NPN Epitaxial Planar Silicon Transistor 2SC3770 UHF, VHF Oscillator Mixer, HF Amplifier Applications Applications Package Dimensions UHF/VHF frequency converters, local oscillators, HF unit:mm amplifiers. 2018A [2SC3770] Features High power gain : PG=15dB typ (f=0.4GHz). High cutoff frequency : fT=1.2GHz typ. C : Collector B : Base E : Emitter SANY

5.26. 2sc3708.pdf Size:127K _sanyo

2SC3760
2SC3760

Ordering number:EN2217A PNP/NPN Epitaxial Planar Silicon Transistor 2SA1450/2SC3708 Low-Frequency Driver Applications Features Package Dimensions Adoption of FBET process. unit:mm AF amp, AF power amp. 2003A High breakdown voltage : VCEO>80V [2SA1450/2SC3708] JEDEC : TO-92 B : Base ( ) : 2SA1450 EIAJ : SC-43 C : Collector SANYO : NP E : Emitter Specifications Absolute Maxim

5.27. 2sc3748.pdf Size:94K _sanyo

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Ordering number:EN2001A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1471/2SC3748 60V/10A High-Speed Switching Applications Applications Package Dimensions Car-use inductance drivers, lamp drivers. unit:mm Inverters drivers, conveters (strobes, flashes, FLT 2041 lighting circuits). [2SA1471/2SC3748] Power amplifiers (high-power car stereos, motor control). High-speed sw

5.28. 2sc3785.pdf Size:84K _sanyo

2SC3760
2SC3760

5.29. 2sc3774.pdf Size:125K _sanyo

2SC3760
2SC3760

Ordering number:EN1947B NPN Epitaxial Planar Silicon Transistor 2SC3774 UHF Low-Noise Amplifier, Wide-Band Amplifier Applications Applications Package Dimensions UHF low-noise amplifiers, wide-band amplifiers. unit:mm 2018A Features [2SC3774] Small noise figure : NF=2.2dB typ (f=0.9GHz). High power gain : MAG=14dB typ (f=0.9GHz). High cutoff frequency : fT=5.0GHz typ. C : Coll

5.30. 2sc3749.pdf Size:100K _sanyo

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2SC3760

Ordering number:EN1968A NPN Triple Diffused Planar Silicon Transistor 2SC3749 500V/3A Switching Regulator Applications Features Package Dimensions High breakdown voltage and high reliability. unit:mm Fast switching speed. 2041A Wide ASO. [2SC3749] Adoption of MBIT process. Micaless package facilitating mounting. 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220ML Sp

5.31. 2sc3781.pdf Size:128K _sanyo

2SC3760
2SC3760

Ordering number:EN2527A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1475/2SC3781 Ultrahigh-Definition CRT Display Video Output Applications Applications Package Dimensions Video output. unit:mm Color TV chroma output. 2010C Wide-band amp. [2SA1475/2SC3781] Features High fT (fT typ=500MHz). High breakdown voltage (VCEO? 120V). Small reverse transfer capacitance

5.32. 2sc3776.pdf Size:124K _sanyo

2SC3760
2SC3760

Ordering number:EN1949B NPN Epitaxial Planar Silicon Transistor 2SC3776 UHF Oscillator, Mixer, Low-Noise Amplifier, Wide-Band Amplifier Applications Applications Package Dimensions UHF frequency converters, local oscillators, low- unit:mm noise amplifiers, wide-band amplifiers. 2004A [2SC3776] Features Small noise figure : NF=2.5dB typ (f=0.9GHz). High power gain : MAG=12dB typ

5.33. 2sc3771.pdf Size:137K _sanyo

2SC3760
2SC3760

Ordering number:EN1944B NPN Epitaxial Planar Silicon Transistor 2SC3771 UHF, VHF Oscillator Mixer, HF Amplifier Applications Applications Package Dimensions UHF/VHF frequency converters, local oscillators, HF unit:mm amplifiers. 2018A [2SC3771] Features High power gain : PG=10dB typ (f=0.9GHz). PG=16dB typ (f=0.4GHz). Small noise figure : NF=3.5dB typ (f=0.9GHz). High cu

5.34. 2sc3788.pdf Size:154K _sanyo

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2SC3760

Ordering number:EN2253A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1478/2SC3788 High-Definition CRT Display Video Output Applications Features Package Dimensions High breakdown voltage : VCEO? 200V. unit:mm Small reverse transfer capacitance and excellent high 2042A frequency cahaceteristic [2SA1478/2SC3788] : Cre=1.2pF (NPN), 1.7pF (PNP). Adoption of FBET process. B :

5.35. 2sc3786.pdf Size:81K _sanyo

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5.36. 2sc3780.pdf Size:125K _sanyo

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Ordering number:EN2526 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1474/2SC3780 Ultrahigh-Definition CRT Display Video Output Applications Applications Package Dimensions Video Output. unit:mm Color TV chroma output. 2010C Wide-band amp. [2SA1474/2SC3780] Features High fT (fT typ=800MHz). Small reverse transfer capacitance and excellent high frequency characterist

5.37. 2sc3789.pdf Size:157K _sanyo

2SC3760
2SC3760

Ordering number:EN2093 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1479/2SC3789 High-Definiton CRT Display Video Output Applications Applications Package Dimensions High-definition CRT display. unit:mm Color TV chroma output, high breakdown voltage 2042A drivers. [2SA1479/2SC3789] Features High breakdown voltage (VCEO? 300V). Excellent high frequency characteristic :

5.38. 2sc3746.pdf Size:101K _sanyo

2SC3760
2SC3760

Ordering number:EN1973A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1469/2SC3746 60V/5A High-Speed Switching Applications Applications Package Dimensions Various inductance lamp drivers for electrical unit:mm equipment. 2041 Inverters, converters (strobo, flash, fluorescent lamp [2SA1469/2SC3746] lighting circuit). Power amp (high power car stereo, motor controller). H

5.39. 2sc3734.pdf Size:233K _nec

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2SC3760

5.40. 2sc3732.pdf Size:161K _nec

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5.41. 2sc3736.pdf Size:161K _nec

2SC3760
2SC3760

DATA SHEET SILICON TRANSISTOR 2SC3736 HIGH SPEED SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION PACKAGE DRAWING (Unit: mm) The 2SC3736 is designed for power amplifier and high speed 4.5 0.1 switching applications. 1.6 0.2 1.5 0.1 FEATURES High speed, high voltage switching Low collector saturation voltage 2 Complementary to the 2SA1460 PNP

5.42. 2sc3731.pdf Size:193K _nec

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2SC3760

5.43. 2sc3735.pdf Size:180K _nec

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2SC3760

5.44. 2sc3739.pdf Size:240K _nec

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5.45. 2sc3722.pdf Size:229K _rohm

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2SC3760

5.46. 2sc3707.pdf Size:38K _panasonic

2SC3760
2SC3760

Transistor 2SC3707 Silicon NPN epitaxial planer type For UHF amplification Unit: mm +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features Possible with the small current and low voltage. High transition frequency fT. 1 Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine packing. 2 Absolute Maximum Rati

5.47. 2sc3757 e.pdf Size:47K _panasonic

2SC3760
2SC3760

Transistor 2SC3757 Silicon NPN epitaxial planer type For high speed switching Unit: mm +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features High-speed switching. Low collector to emitter saturation voltage VCE(sat). 1 Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine packing. 2 Allowing pair use wit

5.48. 2sc3795.pdf Size:63K _panasonic

2SC3760
2SC3760

Power Transistors 2SC3795, 2SC3795A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Features High-speed switching Unit: mm High collector to base voltage VCBO 10.0 0.2 4.2 0.2 Low collector to emitter saturation voltage VCE(sat) 5.5 0.2 2.7 0.2 Full-pack package which can be installed to the heat sink with one screw Absolute Maximum Rating

5.49. 2sc3757.pdf Size:64K _panasonic

2SC3760
2SC3760

Transistors 2SC3757 Silicon NPN epitaxial planer type Unit: mm 0.40+0.10 For high speed switching 0.05 0.16+0.10 0.06 3 Features High-speed switching 1 2 Low collector to emitter saturation voltage VCE(sat) (0.95) (0.95) Mini type package, allowing downsizing of the equipment and 1.90.1 automatic insertion through the tape packing and the magazine 2.90+0.20 0.05 packi

5.50. 2sc3796.pdf Size:80K _panasonic

2SC3760

5.51. 2sc3707 e.pdf Size:42K _panasonic

2SC3760
2SC3760

Transistor 2SC3707 Silicon NPN epitaxial planer type For UHF amplification Unit: mm +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features Possible with the small current and low voltage. High transition frequency fT. 1 Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine packing. 2 Absolute Maximum Rati

5.52. 2sc3704.pdf Size:37K _panasonic

2SC3760
2SC3760

Transistor 2SC3704 Silicon NPN epitaxial planer type For UHF band low-noise amplification Unit: mm +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features Low noise figure NF. High gain. 1 High transition frequency fT. 3 Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 2 packing. Absolute Maximum Ratin

5.53. 2sc3743.pdf Size:56K _panasonic

2SC3760
2SC3760

Power Transistors 2SC3743 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features High-speed switching ? 3.1 0.1 Wide area of safe operation (ASO) with high breakdown voltage Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with

5.54. 2sc3704 e.pdf Size:41K _panasonic

2SC3760
2SC3760

Transistor 2SC3704 Silicon NPN epitaxial planer type For UHF band low-noise amplification Unit: mm +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features Low noise figure NF. High gain. 1 High transition frequency fT. 3 Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 2 packing. Absolute Maximum Ratin

5.55. 2sc3793.pdf Size:27K _hitachi

2SC3760
2SC3760

2SC3793 Silicon NPN Epitaxial Application UHF local oscillator Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC3793 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 20 V Collector to emitter voltage VCEO 15 V Emitter to base voltage VEBO 3V Collector current IC 50 mA Collector power dissipation PC 150 mW Junction temperature Tj

5.56. 2sc3724.pdf Size:46K _no

2SC3760

5.57. 2sc3725.pdf Size:46K _no

2SC3760

5.58. 2sc3728.pdf Size:70K _isahaya

2SC3760
2SC3760

ISAHAYA ELECTRONICS CORPORATION http://www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN ??Keep safety in your circuit designs ! ? Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury,

5.59. 2sc3723.pdf Size:242K _jmnic

2SC3760
2SC3760

JMnic Product Specification Silicon NPN Power Transistors 2SC3723 DESCRIPTION · ·With TO-220C package ·High voltage ,high speed switching ·High reliability APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absol

5.60. 2sc3710.pdf Size:30K _jmnic

2SC3760

Power Transistors www.jmnic.com 2SC3710 Silicon NPN Transistors Features B C E ?With TO-220Fa package ?Complement to type 2SA1452 ?Hihg current switching applications Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 80 V VCEO Collector to emitter voltage 80 V VEBO Emitter to base voltage 6 V IB Base current 2 A IC Collector curr

5.61. 2sc3720.pdf Size:416K _jmnic

2SC3760
2SC3760

Product Specification Silicon NPN Power Transistor 2SC3720 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V (Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for high speed switching and horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 1

5.62. 2sc3725.pdf Size:151K _jmnic

2SC3760
2SC3760

JMnic Product Specification Silicon NPN Power Transistors 2SC3725 DESCRIPTION ·With TO-3PN package ·High voltage ,high speed switching ·High reliability APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 sim

5.63. 2sc3746.pdf Size:190K _jmnic

2SC3760
2SC3760

JMnic Product Specification Silicon NPN Power Transistors 2SC3746 DESCRIPTION ·With TO-220F package ·Complement to type 2SA1469 ·Low saturation voltage ·Excellent current dependence of hFE ·Short switching time APPLICATIONS ·Various inductance of lamp drivers for electronic equipment ·Inverters ,converters ·Switching regulator ,driver PINNING PIN DESCRIPTION 1

5.64. 2sc3714.pdf Size:601K _shindengen

2SC3760

5.65. 2sc3750.pdf Size:149K _inchange_semiconductor

2SC3760
2SC3760

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3750 DESCRIPTION ·With TO-220F package ·High breakdown voltage and high reliability. ·Fast switching speed. ·Wide area of safe operation APPLICATIONS ·500V/5A switching regulator applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter

5.66. 2sc3729.pdf Size:244K _inchange_semiconductor

2SC3760
2SC3760

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3729 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·Wide Area of Safe Operation APPLICATIONS ·Designed for TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Colle

5.67. 2sc3752.pdf Size:182K _inchange_semiconductor

2SC3760
2SC3760

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3752 DESCRIPTION Ў¤ With TO-220F package Ў¤ High breakdown voltage and high reliability. Ў¤ Fast switching speed. Ў¤ Wide ASO(Safe Operating Area) APPLICATIONS Ў¤ 800V/3A switching regulator applications PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-220F) and symbol Emitter DESCRIPT

5.68. 2sc3795 2sc3795a.pdf Size:146K _inchange_semiconductor

2SC3760
2SC3760

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-220Fa package Ў¤ High breakdown voltage Ў¤ High speed switching Ў¤ Low collector saturation voltage APPLICATIONS Ў¤ For high breakdown voltate ,high-speed switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter 2SC3795 2SC3795A Ў¤ Fig.1 simplified outline

5.69. 2sc3709.pdf Size:271K _inchange_semiconductor

2SC3760
2SC3760

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3709 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 0.4V(Max)@IC= 6A ·Good Linearity of hFE ·High Switching Speed ·Complement to Type 2SA1451 APPLICATIONS ·Designed for high current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Col

5.70. 2sc3751.pdf Size:232K _inchange_semiconductor

2SC3760
2SC3760

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3751 DESCRIPTION ·High Breakdown Voltage and High Reliability ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitte

5.71. 2sc3723.pdf Size:207K _inchange_semiconductor

2SC3760
2SC3760

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3723 DESCRIPTION Ў¤ With TO-220C package Ў¤ High voltage ,high speed switching Ў¤ High reliability APPLICATIONS Ў¤ Switching regulators Ў¤ Ultrasonic generators Ў¤ High frequency inverters Ў¤ General purpose power amplifiers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DE

5.72. 2sc3710.pdf Size:166K _inchange_semiconductor

2SC3760
2SC3760

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3710 DESCRIPTION Ў¤ With TO-220Fa package Ў¤ Complement to type 2SA1452 Ў¤ Low collector saturation voltage Ў¤ High speed switching time APPLICATIONS Ў¤ High current switching applications PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-220Fa) and symbol Emitter DESCRIPTION Absolut

5.73. 2sc3783.pdf Size:231K _inchange_semiconductor

2SC3760
2SC3760

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3783 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·High Switching Speed APPLICATIONS ·High speed and high voltage switching applications. ·Switching regulator applications. ·High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL

5.74. 2sc3799.pdf Size:260K _inchange_semiconductor

2SC3760
2SC3760

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3799 DESCRIPTION · ·Collector-Base Breakdown Voltage- : V(BR)CBO= 800V(Min.) ·Low Collector Saturation Voltage ·High Speed Switching APPLICATIONS ·Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800

5.75. 2sc3796.pdf Size:227K _inchange_semiconductor

2SC3760
2SC3760

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3796 DESCRIPTION · ·Collector-Base Breakdown Voltage- : V(BR)CBO= 800V(Min.) ·Low Collector Saturation Voltage ·High Speed Switching APPLICATIONS ·Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800

5.76. 2sc3795b.pdf Size:115K _inchange_semiconductor

2SC3760
2SC3760

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3795B DESCRIPTION Ў¤ With TO-220F package Ў¤ High breakdown voltage Ў¤ Fast switching speed Ў¤ Low collector saturation voltage APPLICATIONS Ў¤ For high voltalge ,high-speed switching applications PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-220F) and symbol Emitter DESCRIPTION

5.77. 2sc3737.pdf Size:255K _inchange_semiconductor

2SC3760
2SC3760

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3737 DESCRIPTION ·High Collector-Base Breakdown Voltage- : V(BR)CBO= 800V(Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for high speed switching and horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT V

5.78. 2sc3794 2sc3794a.pdf Size:119K _inchange_semiconductor

2SC3760
2SC3760

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3794 2SC3794A DESCRIPTION Ў¤ With TO-220Fa package Ў¤ High VCBO Ў¤ High speed switching Ў¤ Low collector saturation voltage APPLICATIONS Ў¤ For high speed switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol Ў¤ Absolute m

5.79. 2sc3748.pdf Size:154K _inchange_semiconductor

2SC3760
2SC3760

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-220F package Ў¤ Low saturation voltage. Ў¤ Excellent dependence of hFE on current. Ў¤ Fast switching speed. APPLICATIONS Ў¤ Car-use inductance drivers, lamp drivers. Ў¤ Inverters drivers, conveters (strobes, flashes, FLT lighting circuits). Ў¤ Power amplifiers Ў¤ High-speed swit

5.80. 2sc3720.pdf Size:226K _inchange_semiconductor

2SC3760
2SC3760

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3720 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V (Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for high speed switching and horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER MAX UNIT

5.81. 2sc3749.pdf Size:233K _inchange_semiconductor

2SC3760
2SC3760

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3749 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 500V(Min.) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCE

5.82. 2sc3797.pdf Size:227K _inchange_semiconductor

2SC3760
2SC3760

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3797 DESCRIPTION · ·Collector-Base Breakdown Voltage- : V(BR)CBO= 800V(Min.) ·Low Collector Saturation Voltage ·High Speed Switching APPLICATIONS ·Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800

5.83. 2sc3743.pdf Size:258K _inchange_semiconductor

2SC3760
2SC3760

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3743 DESCRIPTION · ·Collector-Emiiter Breakdown Voltage- : V(BR)CEO= 800V(Min.) ·Wide Area of Safe Operation ·High Speed Switching APPLICATIONS ·Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V

5.84. 2sc3725.pdf Size:119K _inchange_semiconductor

2SC3760
2SC3760

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3725 DESCRIPTION Ў¤ With TO-3PN package Ў¤ High voltage ,high speed switching Ў¤ High reliability APPLICATIONS Ў¤ Switching regulators Ў¤ Ultrasonic generators Ў¤ High frequency inverters Ў¤ General purpose power amplifiers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig

5.85. 2sc3798.pdf Size:260K _inchange_semiconductor

2SC3760
2SC3760

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3798 DESCRIPTION · ·Collector-Base Breakdown Voltage- : V(BR)CBO= 800V(Min.) ·Low Collector Saturation Voltage ·High Speed Switching APPLICATIONS ·Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800

5.86. 2sc3719.pdf Size:226K _inchange_semiconductor

2SC3760
2SC3760

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3719 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V (Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for high speed switching and horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER MAX UNIT

5.87. 2sc3756.pdf Size:88K _inchange_semiconductor

2SC3760
2SC3760

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3756 DESCRIPTION ·With TO-3PML package ·High speed ·High breakdown voltage ·High reliability APPLICATIONS ·For TV horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings (Ta=25?)

5.88. 2sc3746.pdf Size:154K _inchange_semiconductor

2SC3760
2SC3760

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-220F package Ў¤ Complement to type 2SA1469 Ў¤ Low saturation voltage Ў¤ Excellent current dependence of hFE Ў¤ Short switching time APPLICATIONS Ў¤ Various inductance of lamp drivers for electronic equipment Ў¤ Inverters ,converters Ў¤ Switching regulator ,driver PINNING PIN 1

5.89. 2sc3734.pdf Size:1621K _kexin

2SC3760
2SC3760

SMD Type Transistors NPN Transistors 2SC3734 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 ■ Features ● High Speed: tstg < 200ns ● Complementary to 2SA1461 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage V

5.90. 2sc3707.pdf Size:923K _kexin

2SC3760
2SC3760

SMD Type Transistors NPN Transistors 2SC3707 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Current Capability IC=10mA ● Collector Emitter Voltage VCEO=7V 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 10 Collecto

5.91. 2sc3772.pdf Size:1316K _kexin

2SC3760
2SC3760

SMD Type Transistors NPN Transistors 2SC3772 SOT-23 Unit: mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 ■ Features ● Collector Current Capability IC=70mA 1 2 ● Collector Emitter Voltage VCEO=16V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collec

5.92. 2sc3773.pdf Size:1320K _kexin

2SC3760
2SC3760

SMD Type Transistors NPN Transistors 2SC3773 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 ■ Features ● Collector Current Capability IC=50mA ● Collector Emitter Voltage VCEO=16V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collec

5.93. 2sc3775.pdf Size:1318K _kexin

2SC3760
2SC3760

SMD Type Transistors NPN Transistors 2SC3775 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Current Capability IC=100mA 1 2 ● Collector Emitter Voltage VCEO=12V +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collec

5.94. 2sc3757.pdf Size:703K _kexin

2SC3760
2SC3760

SMD Type Transistors NPN Transistors 2SC3757 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Current Capability IC=100mA ● Collector Emitter Voltage VCEO=40V 1 2 +0.05 0.95+0.1 -0.1 0.1 -0.01 ● Complementary to 2SA1738 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector -

5.95. 2sc3770.pdf Size:850K _kexin

2SC3760
2SC3760

SMD Type Transistors NPN Transistors 2SC3770 SOT-23 Unit: mm 2.9+0.1 -0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Current Capability IC=30mA ● Collector Emitter Voltage VCEO=20V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Colle

5.96. 2sc3736.pdf Size:1341K _kexin

2SC3760
2SC3760

SMD Type Transistors NPN Transistors 2SC3736 1.70 0.1 ■ Features ● High Speed,High Voltage Switching ● Low Collector Saturation Voltage ● Complementary to 2SA1463 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 80 Collector - Emitter Voltage VCEO 45 V Emitter - Base V

5.97. 2sc3774.pdf Size:1319K _kexin

2SC3760
2SC3760

SMD Type Transistors NPN Transistors 2SC3774 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 ■ Features ● Collector Current Capability IC=70mA 1 2 ● Collector Emitter Voltage VCEO=12V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Colle

5.98. 2sc3704.pdf Size:927K _kexin

2SC3760
2SC3760

SMD Type Transistors NPN Transistors 2SC3704 SOT-23 Unit: mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 ■ Features ● Collector Current Capability IC=80mA ● Collector Emitter Voltage VCEO=10V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collec

5.99. 2sc3771.pdf Size:1363K _kexin

2SC3760
2SC3760

SMD Type Transistors NPN Transistors 2SC3771 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 ■ Features ● Collector Current Capability IC=30mA 1 2 ● Collector Emitter Voltage VCEO=20V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Colle

5.100. 2sc3793.pdf Size:503K _kexin

2SC3760
2SC3760

SMD Type Transistors NPN Transistors 2SC3793 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Current Capability IC=50mA ● Collector Emitter Voltage VCEO=15V 1 2 +0.1 +0.05 0.95-0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collect

5.101. 2sc3735.pdf Size:1125K _kexin

2SC3760
2SC3760

SMD Type Transistors NPN Transistors 2SC3735 SOT-23 Unit: mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 ■ Features ● Collector Current Capability IC=200mA ● Collector Emitter Voltage VCEO=15V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collec

5.102. 2sc3739.pdf Size:2345K _kexin

2SC3760
2SC3760

SMD Type Transistors NPN Transistors 2SC3739 SOT-23 Unit: mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 ■ Features ● High Gain Bandwidth Product:fT=200MHz(min) ● Complementary to 2SA1464 1 2 +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector

Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 431 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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BJT: CHDTC114EKPT | CE1A3Q | 2SC6089 | 2SC4714 | 2SD1047C | 2SB817C | FW26025A1 | 2T665B9 | 2T665A9 | MJ13001A | HSC2682 | MRF660 | MP1620 | HLD133D | BFR360F | AV8050S | 3DD5027 | 3DD2901 | 3DD2102 | 3DD313 |

 

 

 

 

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