Биполярный транзистор 2SC3786 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC3786
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 20 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 3 A
Предельная температура PN-перехода (Tj): 125 °C
Граничная частота коэффициента передачи тока (ft): 180 MHz
Статический коэффициент передачи тока (hfe): 4000
Корпус транзистора: TO126
2SC3786 Datasheet (PDF)
2sa1477 2sc3787.pdf
Ordering number:EN2089BPNP/NPN Epitaxial Planar Silicon Transistors2SA1477/2SC3787160V/140mA Switching ApplicationsApplications Package Dimensions Predrivers for 100W power amplifiers. unit:mm2042BFeatures [2SA1477/2SC3787] Adoption of FBET process. Excellent linearity of hFE. Small Cob. Plastic-convered heat sink facilitating high-densitymounting (TO-126M
2sc3782.pdf
Ordering number:EN2528APNP/NPN Epitaxial Planar Silicon Transistors2SA1476/2SC3782Ultrahigh-Definition CRT DisplayVideo Output ApplicationsApplications Package Dimensions Video output.unit:mm Color TV chroma output.2010C Wide-band amp.[2SA1476/2SC3782]Features High fT (fT typ=400MHz). High breakdown voltage (VCEO 200V). Small reverse transfer c
2sa1479 2sc3789.pdf
Ordering number:EN2093PNP/NPN Epitaxial Planar Silicon Transistors2SA1479/2SC3789High-Definiton CRT DisplayVideo Output ApplicationsApplications Package Dimensions High-definition CRT display.unit:mm Color TV chroma output, high breakdown voltage2042Adrivers.[2SA1479/2SC3789]Features High breakdown voltage (VCEO 300V). Excellent high frequency characte
2sa1478 2sc3788.pdf
Ordering number:EN2253APNP/NPN Epitaxial Planar Silicon Transistors2SA1478/2SC3788High-Definition CRT DisplayVideo Output ApplicationsFeatures Package Dimensions High breakdown voltage : VCEO 200V.unit:mm Small reverse transfer capacitance and excellent high2042Afrequency cahaceteristic[2SA1478/2SC3788]: Cre=1.2pF (NPN), 1.7pF (PNP). Adoption of FBET proces
2sc3780.pdf
Ordering number:EN2526PNP/NPN Epitaxial Planar Silicon Transistors2SA1474/2SC3780Ultrahigh-Definition CRT DisplayVideo Output ApplicationsApplications Package Dimensions Video Output.unit:mm Color TV chroma output.2010C Wide-band amp.[2SA1474/2SC3780]Features High fT (fT typ=800MHz). Small reverse transfer capacitance and excellent highfrequency char
2sc3781.pdf
Ordering number:EN2527APNP/NPN Epitaxial Planar Silicon Transistors2SA1475/2SC3781Ultrahigh-Definition CRT DisplayVideo Output ApplicationsApplications Package Dimensions Video output.unit:mm Color TV chroma output.2010C Wide-band amp.[2SA1475/2SC3781]Features High fT (fT typ=500MHz). High breakdown voltage (VCEO 120V). Small reverse transfer c
2sc3788 3da3788.pdf
2SC3788(3DA3788) NPN /SILICON NPN TRANSISTOR : CRT Purpose: High-definition CRT display video output applications. , 2SA1478(3CA1478) Features: High breakdown voltage, small reverse transfer capacitance and excellent high frequenc
2sc3783.pdf
isc Silicon NPN Power Transistor 2SC3783DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 800V(Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed and high voltage switching applications.Switching regulator applications.High speed DC-DC converter applications.ABSOLUTE M
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050