2SC3794 datasheet, аналоги, основные параметры
Наименование производителя: 2SC3794 📄📄
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 25 W
Макcимально допустимое напряжение коллектор-база (Ucb): 800 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 500 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 1.5 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Статический коэффициент передачи тока (hFE): 25
Корпус транзистора: TO218
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Аналоги (замена) для 2SC3794
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2SC3794 даташит
..1. Size:211K inchange semiconductor
2sc3794.pdf 
isc Silicon NPN Power Transistor 2SC3794 DESCRIPTION Collector-Base Breakdown Voltage- V = 800V(Min.) (BR)CBO Low Collector Saturation Voltage High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE
..2. Size:119K inchange semiconductor
2sc3794 2sc3794a.pdf 
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3794 2SC3794A DESCRIPTION With TO-220Fa package High VCBO High speed switching Low collector saturation voltage APPLICATIONS For high speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute maximum r
0.1. Size:100K inchange semiconductor
2sc3794a.pdf 
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3794 2SC3794A DESCRIPTION With TO-220Fa package High VCBO High speed switching Low collector saturation voltage APPLICATIONS For high speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute maximum
8.2. Size:175K sanyo
2sa1480 2sc3790.pdf 
Ordering number EN2254 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1480/2SC3790 High-Definiton CRT Display Video Output Applications Features Package Dimensions High breakdown voltage (VCEO 300V). unit mm Small reverse transfer capacitance and excellent high 2042A frequency characteristic [2SA1480/2SC3790] Cre=1.8pF (NPN), 2.3pF (PNP). Adoption of MBIT process.
8.3. Size:63K panasonic
2sc3795.pdf 
Power Transistors 2SC3795, 2SC3795A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Features High-speed switching Unit mm High collector to base voltage VCBO 10.0 0.2 4.2 0.2 Low collector to emitter saturation voltage VCE(sat) 5.5 0.2 2.7 0.2 Full-pack package which can be installed to the heat sink with one screw Absolute Maximum
8.5. Size:27K hitachi
2sc3793.pdf 
2SC3793 Silicon NPN Epitaxial Application UHF local oscillator Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC3793 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 20 V Collector to emitter voltage VCEO 15 V Emitter to base voltage VEBO 3V Collector current IC 50 mA Collector power dissipation PC 150 mW Junction temperatur
8.6. Size:503K kexin
2sc3793.pdf 
SMD Type Transistors NPN Transistors 2SC3793 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=50mA Collector Emitter Voltage VCEO=15V 1 2 +0.1 +0.05 0.95-0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collect
8.7. Size:176K foshan
2sc3790 3da3790.pdf 
2SC3790(3DA3790) NPN /SILICON NPN TRANSISTOR Purpose High-definition CRT display video output applications. Features High breakdown voltage, small reverse transfer capacitance and excellent high frequency characteristic. /Absolu
8.8. Size:187K inchange semiconductor
2sc3790.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3790 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 300V(Min) (BR)CEO Complement to Type 2SA1480 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-definition CRT display and video output applications. ABSOLUTE MAXIMU
8.9. Size:211K inchange semiconductor
2sc3795.pdf 
isc Silicon NPN Power Transistor 2SC3795 DESCRIPTION Collector-Base Breakdown Voltage- V = 800V(Min.) (BR)CBO Low Collector Saturation Voltage High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE
8.10. Size:211K inchange semiconductor
2sc3798.pdf 
isc Silicon NPN Power Transistor 2SC3798 DESCRIPTION Collector-Base Breakdown Voltage- V = 800V(Min.) (BR)CBO Low Collector Saturation Voltage High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE
8.11. Size:146K inchange semiconductor
2sc3795 2sc3795a.pdf 
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3795 2SC3795A DESCRIPTION With TO-220Fa package High breakdown voltage High speed switching Low collector saturation voltage APPLICATIONS For high breakdown voltate ,high-speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) an
8.12. Size:210K inchange semiconductor
2sc3799.pdf 
isc Silicon NPN Power Transistor 2SC3799 DESCRIPTION Collector-Base Breakdown Voltage- V = 800V(Min.) (BR)CBO Low Collector Saturation Voltage High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE
8.13. Size:212K inchange semiconductor
2sc3797.pdf 
isc Silicon NPN Power Transistor 2SC3797 DESCRIPTION Collector-Base Breakdown Voltage- V = 800V(Min.) (BR)CBO Low Collector Saturation Voltage High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE
8.14. Size:213K inchange semiconductor
2sc3796.pdf 
isc Silicon NPN Power Transistor 2SC3796 DESCRIPTION Collector-Base Breakdown Voltage- V = 800V(Min.) (BR)CBO Low Collector Saturation Voltage High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE
8.15. Size:214K inchange semiconductor
2sc3795b.pdf 
isc Silicon NPN Power Transistor 2SC3795B DESCRIPTION Collector-Base Breakdown Voltage- V = 1000V(Min.) (BR)CBO Low Collector Saturation Voltage High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALU
8.16. Size:179K inchange semiconductor
2sc3793.pdf 
INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3793 DESCRIPTION Low Noise High Gain 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in UHF local oscillator. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 20 V CBO V Collector-Emitter
Другие транзисторы: 2SC3790, 2SC3790C, 2SC3790D, 2SC3790E, 2SC3790F, 2SC3791, 2SC3792, 2SC3793, BC557, 2SC3795, 2SC3796, 2SC3797, 2SC3798, 2SC3799, 2SC38, 2SC380, 2SC3800
