Power Transistors2SC3795, 2SC3795ASilicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingFeaturesHigh-speed switchingUnit: mm High collector to base voltage VCBO10.0 0.2 4.2 0.2Low collector to emitter saturation voltage VCE(sat)5.5 0.2 2.7 0.2Full-pack package which can be installed to the heat sink withone screwAbsolute Maximum

isc Silicon NPN Power Transistor 2SC3795DESCRIPTION Collector-Base Breakdown Voltage-: V = 800V(Min.)(BR)CBOLow Collector Saturation VoltageHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3795 2SC3795A DESCRIPTION With TO-220Fa package High breakdown voltage High speed switching Low collector saturation voltage APPLICATIONS For high breakdown voltate ,high-speed switching applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) an

isc Silicon NPN Power Transistor 2SC3795BDESCRIPTION Collector-Base Breakdown Voltage-: V = 1000V(Min.)(BR)CBOLow Collector Saturation VoltageHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALU

Ordering number:EN2254PNP/NPN Epitaxial Planar Silicon Transistors2SA1480/2SC3790High-Definiton CRT DisplayVideo Output ApplicationsFeatures Package Dimensions High breakdown voltage (VCEO 300V).unit:mm Small reverse transfer capacitance and excellent high2042Afrequency characteristic[2SA1480/2SC3790]: Cre=1.8pF (NPN), 2.3pF (PNP). Adoption of MBIT process.

2SC3793Silicon NPN EpitaxialApplicationUHF local oscillatorOutlineMPAK311. Emitter2. Base23. Collector2SC3793Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 20 VCollector to emitter voltage VCEO 15 VEmitter to base voltage VEBO 3VCollector current IC 50 mACollector power dissipation PC 150 mWJunction temperatur

SMD Type TransistorsNPN Transistors2SC3793SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=50mA Collector Emitter Voltage VCEO=15V1 2+0.1+0.050.95-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collect

2SC3790(3DA3790) NPN /SILICON NPN TRANSISTOR : Purpose: High-definition CRT display video output applications. : Features: High breakdown voltage, small reverse transfer capacitance and excellent high frequency characteristic. /Absolu

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3790DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOComplement to Type 2SA1480100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-definition CRT display and video outputapplications.ABSOLUTE MAXIMU

isc Silicon NPN Power Transistor 2SC3798DESCRIPTION Collector-Base Breakdown Voltage-: V = 800V(Min.)(BR)CBOLow Collector Saturation VoltageHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE

isc Silicon NPN Power Transistor 2SC3799DESCRIPTION Collector-Base Breakdown Voltage-: V = 800V(Min.)(BR)CBOLow Collector Saturation VoltageHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3794 2SC3794A DESCRIPTION With TO-220Fa package High VCBO High speed switching Low collector saturation voltage APPLICATIONS For high speed switching applications PINNING PIN DESCRIPTION1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol3 Emitter Absolute maximum

isc Silicon NPN Power Transistor 2SC3797DESCRIPTION Collector-Base Breakdown Voltage-: V = 800V(Min.)(BR)CBOLow Collector Saturation VoltageHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE

isc Silicon NPN Power Transistor 2SC3794DESCRIPTION Collector-Base Breakdown Voltage-: V = 800V(Min.)(BR)CBOLow Collector Saturation VoltageHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE

isc Silicon NPN Power Transistor 2SC3796DESCRIPTION Collector-Base Breakdown Voltage-: V = 800V(Min.)(BR)CBOLow Collector Saturation VoltageHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3794 2SC3794A DESCRIPTION With TO-220Fa package High VCBO High speed switching Low collector saturation voltage APPLICATIONS For high speed switching applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol3 EmitterAbsolute maximum r

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC3793DESCRIPTIONLow NoiseHigh Gain100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in UHF local oscillator.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 20 VCBOV Collector-Emitter