Power Transistors2SC3873Silicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm15.0 0.3 5.0 0.2Features11.0 0.2 3.2High-speed switchingHigh collector to base voltage VCBO 3.2 0.1Wide area of safe operation (ASO)Satisfactory linearity of foward current transfer ratio hFEFull-pack package which can be installed to the hea

2SC380TM TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC380TM High Frequency Amplifier Applications Unit: mm High power gain: Gpe = 29dB (typ.) (f = 10.7 MHz) Recommended for FM IF, OSC stage and AM CONV. IF stage. Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 35 VCollector-emitter voltage

2SC3805 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3805 TV Horizontal Deflection Output Applications Unit: mm TV Chroma Output Applications High voltage: VCEO = 300 V Low output capacitance: C = 3.0 pF (typ.) obMaximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 300 VCollector-emitter voltage VCEO 300 V

2SC3862 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3862 TV Tuner, UHF Mixer Applications Unit: mm VHF~UHF Band RF Amplifier Applications Exchange of emitter for base in 2SC3120 Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 30 VCollector-emitter voltage VCEO 15 VEmitter-base voltage VEBO 3 VCollector

2SC3803 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3803 High Frequency Amplifier Applications Unit: mm Video Amplifier Applications High Speed Switching Applications High transition frequency: fT = 200 MHz (typ.) Low collector output capacitance: C = 3.5 pF (typ.) ob Complementary to 2SA1483 Maximum Ratings (Ta = 25C) Characteristics Sym

Ordering number:EN4097NPN Triple Diffused Planar Silicon Transistor2SC3896Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High reliability (Adoption of HVP process).2039D High breakdown voltage (VCBO=1500V).[2SC3896] Adoption of MBIT process.1 : Base2 : Collector3 : E

Ordering number:EN4098NPN Triple Diffused Planar Silicon Transistor2SC3897Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High reliability (Adoption of HVP process).2039D High breakdown voltage (VCBO=1500V).[2SC3897] Adoption of MBIT process.1 : Base2 : Collector3 : E

Ordering number:EN2544BNPN Epitaxial Planar Type Silicon Transistor2SC3820High hFE, AF Amplifier ApplicationsApplications Package Dimensions Drivers, muting circuits. unit:mm2033Features [2SC3820] Adoption of FBET and MBIT processes. High DC current gain (hFE=800 to 3200). Low collector-to-emitter saturation voltage(VCE(sat) 0.5V). High VEBO (VEBO 15

Ordering number:EN2965BNPN Triple Diffused Planar Silicon Transistor2SC3894Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High breakdown voltage (VCBO=1500V).2039D High reliability (Adoption of HVP process).[2SC3894] Adoption of MBIT process.1 : Base2 : Collector3 :

Ordering number:EN2105ANPN Epitaxial Planar Silicon Transistor2SC3808High hFE, Low-FrequencyGeneral-Purpose Amplifier ApplicationsApplications Package Dimensions Low frequency general-purpose amplifiers, drivers. unit:mm2043AFeatures [2SC3808] Large current capacity (IC=2A). Adoption of MBIT process. High DC current gain (hFE=800 to 3200). Low collector-to

Ordering number:EN2018ANPN Epitaxial Planar Silicon Transistor2SC3807High hFE, Low-FrequencyGeneral-Purpose Amplifier ApplicationsApplications Package Dimensions Low frequency general-purpose amplifiers, drivers. unit:mm2043AFeatures [2SC3807] Large current capacity (IC=2A). Adoption of MBIT process. High DC current gain (hFE=800 to 3200). Low collector-to

Ordering number:EN2966BNPN Triple Diffused Planar Silicon Transistor2SC3895Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High breakdown voltage (VCBO=1500V).2039D High reliability (Adoption of HVP process).[2SC3895] Adoption of MBIT process.1 : Base2 : Collector3 :

DATA SHEETSILICON TRANSISTOR2SC3810NPN SILICON EPITAXIAL TRANSISTORFOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGSINDUSTRIAL USEFEATURES PACKAGE DIMENSIONS (in millimeters) The 2SC3810 is an NPN silicon epitaxial dual transistor having+0.35.0 MIN. 3.5-0.2 5.0 MIN.a large-gain-bandwidth product performance in a wide operating3 2current range. Dual chips i

DATA SHEETDATA SHEETSILICON TRANSISTOR2SC3841UHF OSCILLATOR AND UHF MIXERNPN SILICON EPITAXIAL TRANSISTORMINI MOLDDESCRIPTIONThe 2SC3841 is an NPN silicon epitaxial transistor intended for use asPACKAGE DIMENSIONS(Units: mm)UHF oscillators and a UHF mixer in a tuner of a TV receiver.The device features stable oscillation and small frequency drift against2.80.2any c

DATA SHEETSILICON TRANSISTOR2SC3809NPN SILICON EPITAXIAL TRANSISTORFOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGSINDUSTRIAL USEFEATURES PACKAGE DIMENSIONS (in millimeters) The 2SC3809 is an NPN silicon epitaxial dual transistor having+0.35.0 MIN. 3.5-0.2 5.0 MIN.a large-gain-bandwidth product performance in a wide operating3 2current range. Dual chips i

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2SC5662 / 2SC4726 / 2SC4083 /Transistors 2SC3838K / 2SC4043SHigh-Frequency Amplifier Transistor(11V, 50mA, 3.2GHz)2SC5662 / 2SC4726 / 2SC4083 /2SC3838K / 2SC4043S External dimensions (Units : mm) Features1) High transition frequency. (Typ. fT= 1.5GHz)2SC56621.20.2 0.8 0.22) Small rbbCc and high gain. (Typ. 4ps)(2)3) Small NF. (3)(1)(1) Base0.15Max.(2) E

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High-Frequency Amplifier Transistor (20V, 50mA, 1.5GHz) 2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K Features Dimensions (Unit : mm) 1) High transition frequency. (Typ. fT = 1.5GHz) 2SC56612) Small rbbCc and high gain. (Typ. 6ps) 3) Small NF. (1) BasePackaging specifications and hFE ROHM : VMT3 (2) EmitterType 2SC5661 2SC4725 2SC4082 2SC3837K(3) CollectorPackage

2SC3838KDatasheetHigh-Frequency Amplifer Transistor (11V, 50mA, 3.2GHz)lOutlinel SOT-346 Parameter Value SC-59 VCEO11VIC50mASMT3 lFeatures lInner circuitl l1)High transition frequency.(Typ. fT=3.2GHz)2)Small rbb'Cc and high gain.(Typ.4ps)3)Small NF.lApplicationlUHF FR

High-Frequency Amplifier Transistor (20V, 50mA, 1.5GHz) 2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K Features Dimensions (Unit : mm) 1) High transition frequency. (Typ. fT = 1.5GHz) 2SC56612) Small rbbCc and high gain. (Typ. 6ps) 3) Small NF. (1) BasePackaging specifications and hFE ROHM : VMT3 (2) EmitterType 2SC5661 2SC4725 2SC4082 2SC3837K(3) CollectorPackage

High-Frequency Amplifier Transistor(11V, 50mA, 3.2GHz) 2SC5662 / 2SC4726 /2SC4083 / 2SC3838K Features Dimensions (Unit : mm) 1) High transition frequency. (Typ. fT= 3.2GHz) 2SC56621.22) Small rbbCc and high gain. (Typ. 4ps) 0.323) Small NF. (3)(1)(2)0.220.130.4 0.4 0.5(1) Base0.8(2) Emitter(3) CollectorROHM : VMT3Packaging specifications and

2SC5661 / 2SC4725 / 2SC4082 / 2SC3837KTransistorsHigh-Frequency Amplifier Transistor(18V, 50mA, 1.5GHz)2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K External dimensions (Units : mm) Features1) High transition frequency. (Typ. fT = 1.5GHz)2SC5661 1.20.2 0.8 0.22) Small rbbCc and high gain. (Typ. 6ps)(2)(3)3) Small NF.(1)(1) Base0.15Max.ROHM : VMT3 (2) Emitter(3

Transistor2SC3829Silicon NPN epitaxial planer typeFor UHF band low-noise amplificationUnit: mm+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15FeaturesLow noise figure NF.High gain.1High transition frequency fT.3Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazine2packing.Absolute Maxi

Power Transistors2SC3870Silicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm10.0 0.2 4.2 0.25.5 0.2 2.7 0.2FeaturesHigh-speed switching 3.1 0.1High collector to base voltage VCBOWide area of safe operation (ASO)Full-pack package which can be installed to the heat sink withone screw1.3 0.21.4 0.1+0.2Abso

Transistor2SC3811Silicon NPN epitaxial planer typeFor high speed switchingUnit: mm5.0 0.2 4.0 0.2FeaturesHigh-speed switching.Low collector to emitter saturation voltage VCE(sat).Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2 +0.2Collector to base voltage VCBO 40 V0.45 0.1 0.45 0.1Collector to emitter voltage VCES 40 V1.27 1.27Emit

Power Transistors2SC3869Silicon NPN triple diffusion planar typeFor high-speed switchingUnit: mm10.0 0.2 4.2 0.25.5 0.2 2.7 0.2FeaturesHigh-speed switching 3.1 0.1High collector to base voltage VCBOWide area of safe operation (ASO)Satisfactory linearity of foward current transfer ratio hFEFull-pack package which can be installed to the heat sink with1.3

Power Transistors2SC3868Silicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm10.0 0.2 4.2 0.25.5 0.2 2.7 0.2FeaturesHigh-speed switching 3.1 0.1High collector to base voltage VCBOWide area of safe operation (ASO)Full-pack package which can be installed to the heat sink withone screw1.3 0.21.4 0.1+0.2Abso

Power Transistors2SC3824, 2SC3824ASilicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm7.00.33.50.23.00.2 0 to 0.152.00.2 Features High-speed switching High collector-base voltage (Emitter open) VCBO I type package enabling direct soldering of the radiating fin to theprinted circuit board, etc. of small

Transistor2SC3829Silicon NPN epitaxial planer typeFor UHF band low-noise amplificationUnit: mm+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15FeaturesLow noise figure NF.High gain.1High transition frequency fT.3Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazine2packing.Absolute Maxi

Transistor2SC3811Silicon NPN epitaxial planer typeFor high speed switchingUnit: mm5.0 0.2 4.0 0.2FeaturesHigh-speed switching.Low collector to emitter saturation voltage VCE(sat).Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2 +0.2Collector to base voltage VCBO 40 V0.45 0.1 0.45 0.1Collector to emitter voltage VCES 40 V1.27 1.27Emit

Power Transistors2SC3872Silicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm15.0 0.3 5.0 0.2Features11.0 0.2 3.2High-speed switchingHigh collector to base voltage VCBO 3.2 0.1Wide area of safe operation (ASO)Full-pack package which can be installed to the heat sink withone screw2.0 0.22.0 0.1Absolute Maximu

Power Transistors2SC3874Silicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm 3.3 0.220.0 0.5 5.0 0.33.0FeaturesHigh-speed switchingHigh collector to base voltage VCBOWide area of safe operation (ASO) 1.5Satisfactory linearity of foward current transfer ratio hFE1.52.0 0.3Absolute Maximum Ratings (TC=25C)2.7

UTC 2SC3835 NPN EPITAXIAL SILICON TRANSISTOR SWITCH NPN TRANSISTOR APLLICATION *Humidifier,DC-DC converter,and general purpose. 1TO-3PN1: BASE 2:COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS (Ta=25C) PARAMETER SYMBOL RATING UNITCollector-Base Voltage VCBO 200 VCollector-Emitter Voltage VCEO 120 VEmitter-Base Voltage VEBO 8 VBase Current IB 3 ACollector Current 7 A

UNISONIC TECHNOLOGIES CO., LTD 2SC3838 NPN SILICON TRANSISTOR HIGH-FREQUENCY AMPLIFIER TRANSISTOR 3 FEATURES 12*High transition frequency. *Small rbbCc and high gain. SOT-23*Small NF. 312SOT-323 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 32SC3838L-x-AE3-R 2SC3838G-x-AE3-R SOT-23 E B C Tape Reel2SC3

UNISONIC TECHNOLOGIES CO., LTD 2SC3834 NPN SILICON TRANSISTOR SWITCH NPN TRANSISTOR DESCRIPTION The UTC 2SC3834 is an epitaxial planar type NPN silicontransistor.. FEATURES * Humidifier, DC-DC converter, and general purpose ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Plating Halogen Free 1 2 3 2SC3834L-TA3-T 2SC3834G-TA3-T TO-220

2SC3836Silicon NPN EpitaxialApplicationLow frequency amplifier, switchingOutlineSPAK1. Emitter122. Collector33. Base2SC3836Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 60 VCollector to emitter voltage VCEO 50 VEmitter to base voltage VEBO 15 VCollector current IC 300 mACollector power dissipation PC 300 mWJu

2SC3867Silicon NPN EpitaxialApplication UHF frequency converter Wide band amplifierOutlineMPAK311. Base2. Emitter23. Collector2SC3867Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 20 VCollector to emitter voltage VCEO 11 VEmitter to base voltage VEBO 3VCollector current IC 50 mACollector power dissipatio

High hFELOW VCE (sat)2SC3852/3852ASilicon NPN Epitaxial Planar Transistor Application : Driver for Solenoid and Motor, Series Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F)Symbol 2SC3852 2SC3852AUnit Symbol Conditions 2SC3852 2SC3852A Unit0.24.20.210.1c0.52.8VCBO 80 100 10ma

2SC380TM 0.05A , 35V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES High Frequency Amplifier Applications G HEmitterCollectorJBase CLASSIFICATION OF hFE A DMillimeter REF.Min. Max.Product-Rank 2SC380TM-R 2SC380TM-O 2SC380TM-YBA 4.40 4.70

2SC388 0.05A , 30V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES TV Final picture if amplifier applications G HEmitterCollectorBase JA DMillimeter REF. Min. Max.BA 4.40 4.70B 4.30 4.70KC 12.70 -D 3.30 3.81E 0.36 0.56F 0.36 0.51

2SC3855 NPN PLANAR SILICON TRANSISTORAUDIO POWER AMPLIFIERDC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SA1491ABSOLUTE MAXIMUM RATING (Ta=25CC)CCCharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 200 V Collector-Emitter Voltage VCEO 140 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC 10 A Collecto

2SC3854 NPN PLANAR SILICON TRANSISTORAUDIO POWER AMPLIFIERDC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SA1490ABSOLUTE MAXIMUM RATING (Ta=25CC)CCCharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 160 V Collector-Emitter Voltage VCEO 120 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC 8 A Collector

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC3873 DESCRIPTION With TO-3PFa package High VCBO High speed switching Good linearity of hFE Wide area of safe operation APPLICATIONS For high speed switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS

JMnic Product Specification Silicon NPN Power Transistors 2SC3842 DESCRIPTION With TO-3PML package High voltage ,high speed High current capability APPLICATIONS For use in TV horizontal output and Power switching applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 EmitterAbsolute maximum ratings (Ta=25)

JMnic Product Specification Silicon NPN Power Transistors 2SC3870 DESCRIPTION With TO-220Fa package High breakdown voltage Wide area of safe operation APPLICATIONS For high speed switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open

JMnic Product SpecificationSilicon NPN Power Transistors 2SC3853 DESCRIPTION With TO-3PN package Complement to type 2SA1489 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNIT

Product Specification www.jmnic.comSilicon NPN Power Transistor 2SC3835 DESCRIPTION Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC=3A Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min) Good Linearity of hFE APPLICATIONS Designed for use in humidifier , DC/DC converter and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBO

Product Specification www.jmnic.com Silicon NPN Power Transistor 2SC3866 DESCRIPTION High Breakdown Voltage- : V(BR)CBO= 900V(Min) High Switching Speed High Reliability APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Coll

JMnic Product SpecificationSilicon NPN Power Transistors 2SC3868 DESCRIPTION With TO-220Fa package High breakdown voltage Wide area of safe operation APPLICATIONS For high speed switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open

Product Specification www.jmnic.com Silicon Power Transistors 2SC3855 DESCRIPTION With TO-3PN package Complement to type 2SA1491 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterFig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE U

Product Specification www.jmnic.comSilicon NPN Power Transistor 2SC3834 DESCRIPTION Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC=3A Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min) Good Linearity of hFE APPLICATIONS Designed for use in humidifier , DC/DC converter and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBO

JMnic Product Specification Silicon NPN Power Transistors 2SC3850 DESCRIPTION With TO-3PN package Good linearity of hFE Low collector saturation voltage APPLICATIONS For power switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=)

JMnic Product Specification Silicon NPN Power Transistors 2SC3851 2SC3851A DESCRIPTION With TO-220F package Complement to type 2SA1488/1488A APPLICATIONS Audio and PPC high voltage power supply ,and general purpose PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMET

JMnic Product SpecificationSilicon NPN Power Transistors 2SC3857 DESCRIPTION With MT-200 package Complement to type 2SA1493 APPLICATIONS Audio and general purpose PINNING(see Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITION

JMnic Product Specification Silicon NPN Power Transistors 2SC3856 DESCRIPTION With TO-3PN package Complement to type 2SA1492 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol3 EmitterAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNIT

Product Specification www.jmnic.comSilicon NPN Power Transistors 2SC3858 DESCRIPTION With MT-200 package Complement to type 2SA1494 APPLICATIONS Audio and general purpose PINNING(see Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol3 EmitterAbsolute maximum ratings (Ta=25C) SYMBOL PARAMETER

JMnic Product SpecificationSilicon NPN Power Transistors 2SC3854 DESCRIPTION With TO-3PN package Complement to type 2SA1490 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNIT

JMnic Product Specification Silicon NPN Power Transistors 2SC3874 DESCRIPTION With TO-3PL package High speed switching High VCBO Wide area of safe operation APPLICATIONS For high-speed switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PL) and symbol 3 EmitterAbsolute maximum ratin

2SC3832Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor)Application : Switching Regulator and General PurposeExternal Dimensions MT-25(TO220) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol Conditions 2SC3832 UnitSymbol 2SC3832 Unit0.24.80.210.20.1ICBOVCBO 500 V VCB=500V 100max A 2.

2SC3831Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor)Application : Switching Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-100(TO3P)Symbol 2SC3831 Unit Symbol Conditions 2SC3831 Unit0.24.80.415.60.19.6 2.0VCBO 600 V VCB=600V 1max mAICBO

2SC3833Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor)Application : Switching Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-100(TO3P)Symbol 2SC3833 Unit Symbol Conditions 2SC3833 Unit0.24.80.415.60.19.6 2.0VCBO 500 V VCB=500V 100max A

2SC3830Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor)Application : Switching Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-25(TO220)Symbol 2SC3830 Unit Symbol Conditions 2SC3830Unit0.24.80.210.20.1VCBO 600 V ICBO VCB=600V 1max 2.0mAVC

2SC3835Silicon NPN Triple Diffused Planar Transistor (Switching Transistor)Application : Humidifier, DC-DC Converter, and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-100(TO3P)Symbol Ratings UnitUnit Symbol Conditions Ratings0.24.80.415.6VCBO 200 VCB=200V 100max A 0.1V ICBO9.6 2.0VCEO 120 IEBO

2SC3834Silicon NPN Triple Diffused Planar Transistor (Switching Transistor)Application : Humidifier, DC-DC Converter, and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-25(TO220)SymbolSymbol 2SC3834 Unit Conditions 2SC3834 Unit0.24.80.210.20.12.0ICBOVCBO 200 V VCB=200V 100max AIEBO 100max A

High hFELOW VCE (sat)2SC3852/3852ASilicon NPN Epitaxial Planar Transistor Application : Driver for Solenoid and Motor, Series Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F)Symbol 2SC3852 2SC3852AUnit Symbol Conditions 2SC3852 2SC3852A Unit0.24.20.210.1c0.52.8VCBO 80 100 10ma

2SC3851/3851ASilicon NPN Epitaxial Planar Transistor (Complement to type 2SA1488/A)Application : Audio and PPC High Voltage Power Supply, and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F)Symbol 2SC3851A Unit Symbol Conditions 2SC3851 2SC3851A Unit2SC38510.24.20.210.1c0.52.8VCBO 100 V 100max

2SC3857Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1493)Application : Audio and General PurposeExternal Dimensions MT-200 Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol 2SC3857 Symbol Conditions 2SC3857 UnitUnit0.26.00.336.4VCBO 200 ICBO VCB=200V 100max AV0.224.42.10.1VCEO 200 IEBO VEB=6V 100m

2SC3856Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1492)Application : Audio and General PurposeExternal Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)SymbolSymbol 2SC3856 Unit Conditions 2SC3856 Unit0.24.80.415.6ICBO 0.1VCBO 200 V VCB=200V 100max A 9.6 2.0IEBOVCEO 180 V VEB=6V 100max

2SC3858Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1494)Application : Audio and General Purpose(Ta=25C) Absolute maximum ratings (Ta=25C) Electrical Characteristics External Dimensions MT-200Symbol 2SC3858 Unit Symbol Conditions 2SC3858 Unit0.26.00.336.4VCBO ICBO VCB=200V 100max A200 V0.224.42.10.12-3.29VCEO IEBO VEB=

2SC3890Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor)Application : Switching Regulator and General PurposeExternal Dimensions FM20(TO220F) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol 2SC3890 Unit Symbol Conditions 2SC3890 Unit0.24.20.210.1c0.52.8VCBO 500 V VCB=500V 100max AICBO

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM3838MAXIMUM RATINGSMAXIMUM RATINGS MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector-Emitter VoltageVCEO 11 VdcC

2SC388(NPN)TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE Features TV final pictureif amplifier applications MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Emitter Voltage 30 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 4 V IC Collector Current -Continuous 50 mA Dimensions in inches a

2SC3838COLLECTORHigh-Frequency Amplifier Transistor33NPN Silicon 11P b Lead(Pb)-Free2BASE2SOT-23EMITTERMAXIMUM RATINGS (Ta=25C)Rating Symbol ValueUnitVCollector-Emitter Voltage CEO 11 VCollector-Base Voltage VCBO20 VEmitter-Base Voltage VEBO3.0 VICmACollector Current-Continuous 50THERMAL CHARACTERISTICSCharacteristics Symbol ValueUnitT

2SC380TM Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features :G =29dB()(f=10.7MHz) pe High power Gain: Gpe=29dB(Typ.)(f=10.7MHz).. / Applications High frequency amplifier applications.

2SC383TM(BR3DG383TMK) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features :G =33dB()(f=45MHz),h pe FE High gain: Gpe=33dB(Typ)(f=45MHz),good linearity of hFE.. / Applications TV final picture IF

2SC3834F(BR3DA3834F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features / Applications - Humidifier, DC-DC converter, and general purpose. / Equivalent Circuit /

LESHAN RADIO COMPANY, LTD.High-Frequency AmplifierTransistorL2SC3838QLT1G Features1.High transition frequency.(Typ.fT=3.2GHz)S-L2SC3838QLT1G2.Small rbb`Cc and high gain.(Typ.4ps)3.Small NF.4.We declare that the material of product compliance with RoHS requirements.34.S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AE

LESHAN RADIO COMPANY, LTD.High-Frequency AmplifierTransistor FeaturesL2SC3838LT1G1.High transition frequency.(Typ.fT=3.2GHz)S-L2SC3838LT1G2.Small rbb`Cc and high gain.(Typ.4ps)3.Small NF.4.We declare that the material of product compliance with RoHS requirements.35.S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-

LESHAN RADIO COMPANY, LTD.High-Frequency AmplifierTransistor FeaturesL2SC3837T1G1.High transition frequency.(Typ.fT=1.5GHz)2.Small rbb`Cc and high gain.(Typ.6ps)S-L2SC3837T1G3.Small NF.4.We declare that the material of product compliance with RoHS requirements.5.S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101

LESHAN RADIO COMPANY, LTD.High-Frequency AmplifierTransistor FeaturesL2SC3838LT1G1.High transition frequency.(Typ.fT=3.2GHz)S-L2SC3838LT1G2.Small rbb`Cc and high gain.(Typ.4ps)3.Small NF.4.We declare that the material of product compliance with RoHS requirements.35.S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-

LESHAN RADIO COMPANY, LTD.High-Frequency AmplifierTransistor FeaturesL2SC3837LT1G1.High transition frequency.(Typ.fT=1.5GHz)S-L2SC3837LT1G2.Small rbb`Cc and high gain.(Typ.6ps)3.Small NF.4.We declare that the material of product compliance with RoHS requirements.35.S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-

LESHAN RADIO COMPANY, LTD.High-Frequency AmplifierTransistor FeaturesL2SC3837QLT1G1.High transition frequency.(Typ.fT=1.5GHz)S-L2SC3837QLT1G2.Small rbb`Cc and high gain.(Typ.6ps)3.Small NF.4.We declare that the material of product compliance with RoHS requirements.35.S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AE

LESHAN RADIO COMPANY, LTD.High-Frequency AmplifierTransistor FeaturesL2SC3837T1G1.High transition frequency.(Typ.fT=1.5GHz)2.Small rbb`Cc and high gain.(Typ.6ps)S-L2SC3837T1G3.Small NF.4.We declare that the material of product compliance with RoHS requirements.5.S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101

LESHAN RADIO COMPANY, LTD.High-Frequency AmplifierTransistorL2SC3838NLT1G Features1.High transition frequency.(Typ.fT=3.2GHz)32.Small rbb`Cc and high gain.(Typ.4ps)3.Small NF.4.We declare that the material of product compliance with RoHS requirements.12MAXIMUM RATINGS (T = 25C unless otherwise noted)AParameter Symbol Value UnitCollector-Base Voltage V 20 VCBO

SMD Type TransistorsNPN Transistors2SC3829SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features Collector Current Capability IC=80mA1 2 Collector Emitter Voltage VCEO=10V+0.1+0.050.95 -0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collect

SMD Type TransistorsNPN Transistors2SC3838SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.1 Features3 High transition frequency. Small rbbCc and high gain. Small NF.1 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Coll

SMD Type TransistorsNPN Transistors2SC3841SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13 Features Collector Current Capability IC=30mA Collector Emitter Voltage VCEO=12V 1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collect

SMD Type TransistorsNPN Transistors2SC3867SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=50mA1 2 Collector Emitter Voltage VCEO=11V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Colle

SMD Type TransistorsNPN Transistors2SC3862SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=50mA Collector Emitter Voltage VCEO=15V 1 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collecto

SMD Type TransistorsNPN Transistors2SC38031.70 0.1 Features High transition frequency: fT = 200 MHz Low collector output capacitance: Cob = 3.5 pF0.42 0.10.46 0.1 Complementary to 2SA14831.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 45

SMD Type TransistorsNPN Transistors2SC3863SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=100mA1 2 Collector Emitter Voltage VCEO=50V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1 Complementary to 2SA15021.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collecto

2SC3834F(3DA3834F) NPN /SILICON NPN TRANSISTOR :- Purpose: Humidifier, DC-DC converter, and general purpose. /Absolute Maximum Ratings(Ta=25) Symbol Rating Unit V CBO200 V V CEO120 V V 8.0 V EBO I 7.0 A C I 3.0 A B P (Tc=25)

2SC3807(3DA3807) NPN /SILION NPN TRANSISTOR:Purpose: low frequency general-purpose amplifiers, drivers.: IC , hFE ,VCE(sat),VEBO Features: Large current capacity, high DC current gain,Low collector-to-emitter saturation voltageHigh V .EBO/Absolute maximum ratings(Ta=25)

2SC3852(3DA3852R) NPN /SILICON NPN TRANSISTOR Application: Driver for solenoid and motor, series regulator and general purpose. :, Features: High h , low V FE CE(sat)./Absolute maximum ratings(Ta=25) Symbo

2SC3834(3DA3834) NPN /SILICON NPN TRANSISTOR :- Purpose: Humidifier, DC-DC converter, and general purpose. /Absolute Maximum Ratings(Ta=25) Symbol Rating Unit V CBO200 V V CEO120 V V 8.0 V EBO I 7.0 A C I 3.0 A B P (Tc=25) 50

GST2SC3838 High-Frequency Amplifier Transistor NPN Silicon Product Description Features This device is designed as a general purpose Collector-Emitter Voltage : 11V amplifier and switch. Collector Current : 50mA Lead(Pb)-FreePackages & Pin Assignments GST2SC3838F(SOT-23) Pin Description1 Base 2 Emitter 3 Collector Marking Information P/N Package Part Marking GST

2SC3834T1TLSilicon NPN Power TransistorDESCRIPTIONLow Collector Saturation Voltage: V = 0.5V(Max)@ I =3ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 120V (Min)(BR)CEOGood Linearity of hFEAPPLICATIONSDesigned for use in humidifier , DC/DC converter andgeneral purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collec

2SC3856T4TLSilicon NPN Power TransistorDESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V =180V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1492APPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 200 VCBOV Collector-Emitter Voltage 180 VCEOV E

2SC3835T4TLSilicon NPN Power TransistorDESCRIPTIONLow Collector Saturation Voltage: V = 0.5V(Max)@ I =3ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 120V (Min)(BR)CEOGood Linearity of hFEAPPLICATIONSDesigned for use in humidifier , DC/DC converter andgeneral purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collec

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC3856DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V =180V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1492APPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 200 VCBOV Collector

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC3866DESCRIPTIONHigh Breakdown Voltage: V = 900V(Min)(BR)CBOHigh Switching SpeedHigh ReliabilityAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base V

isc Silicon NPN Power Transistor 2SC3832DESCRIPTIONLow Collector Saturation Voltage: V = 0.5V(Max)@ I = 3ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 500V (Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUT

isc Silicon NPN Power Transistor 2SC3886DESCRIPTIONHigh Breakdown Voltage-: V = 600V (Min)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for high resolution display.High speed switching regulator output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3866 DESCRIPTION With TO-220F package High speed switching High voltage High reliability APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers PINNING PIN DESCRIPTION1 Base 2 Collector Fig.1 simplified outline (

isc Silicon NPN Power Transistor 2SC3873DESCRIPTION Collector-Base Breakdown Voltage-: V = 500V(Min.)(BR)CBOLow Collector Saturation VoltageWide Area of Safe OperationHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RATINGS (T =25

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3896DESCRIPTIONHigh Breakdown VoltageHigh Switching SpeedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSUltrahigh definition CRT display horizontal deflectionoutput applicationsABSOLUTE MAXIMUM RATINGS(T =25

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3897DESCRIPTIONHigh Breakdown VoltageHigh Switching SpeedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSUltrahigh definition CRT display horizontal deflectionoutput applicationsABSOLUTE MAXIMUM RATINGS(T =25

isc Silicon NPN Power Transistor 2SC3831DESCRIPTIONLow Collector Saturation Voltage: V = 0.5V(Max)@ I = 5ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 500V (Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUT

isc Silicon NPN Power Transistor 2SC3833DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3842DESCRIPTIONHigh Breakdown VoltageHigh Switching SpeedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in TV horizontal output and powerSwitching applications.ABSOLUTE MAXIMUM RATINGS(T =25

isc Silicon NPN Power Transistor 2SC3870DESCRIPTION Collector-Base Breakdown Voltage-: V = 500V(Min.)(BR)CBOLow Collector Saturation VoltageWide Area of Safe OperationHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RATINGS (T =25

isc Silicon NPN Power Transistor 2SC3853DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEODC Current Gain-: h = 50(Min)@ I = 2AFE CComplement to Type 2SA1489Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSY

isc Silicon NPN Power Transistor 2SC3830DESCRIPTIONLow Collector Saturation Voltage: V = 0.5V(Max)@ I =2ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 500V (Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE

isc Silicon NPN Power Transistor 2SC3835DESCRIPTIONLow Collector Saturation Voltage: V = 0.5V(Max)@ I =3ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 120V (Min)(BR)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in humidifier , DC/DC converter andgeneral purpose appl

isc Silicon NPN Power Transistor 2SC3822DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V (Min)(BR)CEOHigh Speed SwitchingHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsDC-DC convertersSolid state relayGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS

isc Silicon NPN Power Transistor 2SC3866ADESCRIPTIONHigh Breakdown Voltage: V = 1000V(Min)(BR)CBOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T =25

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3892A DESCRIPTION With TO-3P(H)IS package Built-in damper diode High voltage ,high speed APPLICATIONS Horizontal deflection output applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3P(H)IS) and symbol 3 EmitterAbsolute maximum ratings (Ta=25)

isc Silicon NPN Power Transistor 2SC3866DESCRIPTIONHigh Breakdown Voltage: V = 900V(Min)(BR)CBOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T =25

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3835G DESCRIPTION Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC=3A Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min) Good Linearity of hFEAPPLICATIONS Designed for use in humidifier , DC/DC converter and general purpose applications ABSOLUTE MAXIMUM RATINGS

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3852 DESCRIPTION With TO-220Fa package Low collector saturation voltage High hFEAPPLICATIONS Driver for solenoid and motor,series regulator and general purpose applications PINNING PIN DESCRIPTION1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute

isc Silicon NPN Power Transistor 2SC3868DESCRIPTION Collector-Base Breakdown Voltage-: V = 500V(Min.)(BR)CBOLow Collector Saturation VoltageWide Area of Safe OperationHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RATINGS (T =25

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC3838DESCRIPTIONLow NoiseNF = 3.5 dB TYP. @V = 6 V, I = 2 mA, f = 500 MHzCE CHigh Current-Gain Bandwidth Productf = 3.2 GHz TYP. @V = 10 V, I = 10 mA, f = 500 MHzT CE C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in low-n

isc Silicon NPN Power Transistor 2SC3855DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 140V(Min)(BR)CEODC Current Gain-: h = 50(Min)@ I = 3AFE CComplement to Type 2SA1491Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aS

isc Silicon NPN Power Transistor 2SC3834DESCRIPTIONLow Collector Saturation Voltage: V = 0.5V(Max)@ I =3ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 120V (Min)(BR)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in humidifier , DC/DC converter andgeneral purpose appl

isc Silicon NPN Power Transistor 2SC3821DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsDC-DC converterSolid state relayGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T

isc Silicon NPN Power Transistor 2SC3894DESCRIPTIONHigh Breakdown Voltage-: V = 1500V(Min)(BR)CBOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSUltrahigh-definition CRT display horizontal deflectionoutput applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC3841DESCRIPTIONHigh Current-Gain Bandwidth Product:f = 4 GHz TYP.TLow Output Capacitance-C = 1.5 pF TYP.OBLow Base Time Constant:r C = 4.0 ps TYP.bb C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as UHF osc

isc Silicon NPN Power Transistor 2SC3850DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)Good Linearity of hFEHigh Collector CurrentMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA

isc Silicon NPN Power Transistor 2SC3852DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEODC Current Gain-: h = 200(Min)@ I = 0.5AFE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDriver for solenoid and motor, series regulator andgeneral purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)a

isc Silicon NPN Power Transistor 2SC3851DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEODC Current Gain-: h = 40(Min)@ I = 1AFE CComplement to Type 2SA1488Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSY

isc Silicon NPN Power Transistor 2SC3857DESCRIPTIONCollector-Emitter Breakdown Voltage-V = 200V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1493Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Coll

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3886A DESCRIPTION With TO-3P(H)IS package High voltage ,high speed APPLICATIONS Horizontal deflection output for high resolution display High speed switching regulator output applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3P(H)IS) and symbol 3

isc Silicon NPN Power Transistor 2SC3871DESCRIPTION Collector-Base Breakdown Voltage-: V = 500V(Min.)(BR)CBOLow Collector Saturation VoltageWide Area of Safe OperationHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RATINGS (T =25

isc Silicon NPN Power Transistor 2SC3883DESCRIPTIONHigh Breakdown Voltage-: V = 800V (Min)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for high resolution display.High speed switching regulator output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3843DESCRIPTIONHigh Breakdown VoltageHigh Switching SpeedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for silicon high speed transistorABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3851 2SC3851A DESCRIPTION With TO-220F package Complement to type 2SA1488/1488A APPLICATIONS Audio and PPC high voltage power supply ,and general purpose PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 EmitterAbsolute maximum ratings (Ta=25)

isc Silicon NPN Power Transistor 2SC3856DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V =180V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1492Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3858 DESCRIPTION With MT-200 package Complement to type 2SA1494 APPLICATIONS Audio and general purpose PINNING(see Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol3 EmitterAbsolute maximum ratings (Ta=25C) SYMBOL

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC3862DESCRIPTIONHigh Gain Bandwidth Productf = 2400 MHz TYP.T100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSTV tuner, UHF mixer applications.VHF~UHF band RF amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

isc Silicon NPN Power Transistor 2SC3890DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOLow Collector Saturation Voltage-: V = 0.5V(Max)@ I = 3ACE(sat) CHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUT

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3895DESCRIPTIONHigh Breakdown VoltageHigh Switching SpeedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSUltrahigh definition CRT display horizontal deflectionoutput applicationsABSOLUTE MAXIMUM RATINGS(T =25

isc Silicon NPN Power Transistor 2SC3884DESCRIPTIONHigh Breakdown Voltage-: V = 1400V (Min)CBOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for high resolution display.High speed switching regulator output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA

isc Silicon NPN Power Transistor 2SC3854DESCRIPTIONCollector-Emitter Breakdown Voltage-V = 120V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1490Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Coll

isc Product Specificationisc Silicon NPN Power Transistor 2SC3874DESCRIPTIONSilicon NPN triple diffusion planar typeHigh Switching SpeedWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage high-speed switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI

isc Silicon NPN Power Transistor 2SC3885DESCRIPTIONHigh Breakdown Voltage: V = 1400V (Min)CBOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for high resolution display.High speed switching regulator output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3851ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEODC Current Gain-: h = 40(Min)@ I = 1AFE CComplement to Type 2SA1488A100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose appli

isc Silicon NPN Power Transistor 2SC3893ADESCRIPTIONHigh Breakdown Voltage-V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

isc Silicon NPN Power Transistor 2SC3892DESCRIPTIONHigh Breakdown Voltage-V = 1400V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

isc Silicon NPN Power Transistor 2SC3893DESCRIPTIONHigh Breakdown Voltage-V = 1400V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

isc Silicon NPN Power Transistor 2SC3852ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEODC Current Gain-: h = 200(Min)@ I = 0.5AFE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDriver for solenoid and motor, series regulator andgeneral purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)a