2SC38 datasheet, аналоги, основные параметры
Наименование производителя: 2SC38 📄📄
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.5 W
Макcимально допустимое напряжение коллектор-база (Ucb): 40 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 25 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 3 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 165 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 125 MHz
Ёмкость коллекторного перехода (Cc): 8 pf
Статический коэффициент передачи тока (hFE): 50
Корпус транзистора: TO5
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Аналоги (замена) для 2SC38
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2SC38 даташит
2sc3873.pdf
Power Transistors 2SC3873 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 15.0 0.3 5.0 0.2 Features 11.0 0.2 3.2 High-speed switching High collector to base voltage VCBO 3.2 0.1 Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the hea
2sc3880s 2sc3195 2sc3194 ktc9016 ktc9018 bf599 2sc3879s 2sc3193 2sc3192 ktc9011 2sc3878s 2sc3191 2sc3190.pdf
2sc380tm.pdf
2SC380TM TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC380TM High Frequency Amplifier Applications Unit mm High power gain Gpe = 29dB (typ.) (f = 10.7 MHz) Recommended for FM IF, OSC stage and AM CONV. IF stage. Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 35 V Collector-emitter voltage
2sc3805.pdf
2SC3805 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3805 TV Horizontal Deflection Output Applications Unit mm TV Chroma Output Applications High voltage VCEO = 300 V Low output capacitance C = 3.0 pF (typ.) ob Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 300 V Collector-emitter voltage VCEO 300 V
2sc3862.pdf
2SC3862 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3862 TV Tuner, UHF Mixer Applications Unit mm VHF UHF Band RF Amplifier Applications Exchange of emitter for base in 2SC3120 Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 15 V Emitter-base voltage VEBO 3 V Collector
2sc3803.pdf
2SC3803 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3803 High Frequency Amplifier Applications Unit mm Video Amplifier Applications High Speed Switching Applications High transition frequency fT = 200 MHz (typ.) Low collector output capacitance C = 3.5 pF (typ.) ob Complementary to 2SA1483 Maximum Ratings (Ta = 25 C) Characteristics Sym
2sc3896.pdf
Ordering number EN4097 NPN Triple Diffused Planar Silicon Transistor 2SC3896 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit mm High reliability (Adoption of HVP process). 2039D High breakdown voltage (VCBO=1500V). [2SC3896] Adoption of MBIT process. 1 Base 2 Collector 3 E
2sc3897.pdf
Ordering number EN4098 NPN Triple Diffused Planar Silicon Transistor 2SC3897 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit mm High reliability (Adoption of HVP process). 2039D High breakdown voltage (VCBO=1500V). [2SC3897] Adoption of MBIT process. 1 Base 2 Collector 3 E
2sc3820.pdf
Ordering number EN2544B NPN Epitaxial Planar Type Silicon Transistor 2SC3820 High hFE, AF Amplifier Applications Applications Package Dimensions Drivers, muting circuits. unit mm 2033 Features [2SC3820] Adoption of FBET and MBIT processes. High DC current gain (hFE=800 to 3200). Low collector-to-emitter saturation voltage (VCE(sat) 0.5V). High VEBO (VEBO 15
2sc3894.pdf
Ordering number EN2965B NPN Triple Diffused Planar Silicon Transistor 2SC3894 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit mm High breakdown voltage (VCBO=1500V). 2039D High reliability (Adoption of HVP process). [2SC3894] Adoption of MBIT process. 1 Base 2 Collector 3
2sc3808.pdf
Ordering number EN2105A NPN Epitaxial Planar Silicon Transistor 2SC3808 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Low frequency general-purpose amplifiers, drivers. unit mm 2043A Features [2SC3808] Large current capacity (IC=2A). Adoption of MBIT process. High DC current gain (hFE=800 to 3200). Low collector-to
2sc3807.pdf
Ordering number EN2018A NPN Epitaxial Planar Silicon Transistor 2SC3807 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Low frequency general-purpose amplifiers, drivers. unit mm 2043A Features [2SC3807] Large current capacity (IC=2A). Adoption of MBIT process. High DC current gain (hFE=800 to 3200). Low collector-to
2sc3895.pdf
Ordering number EN2966B NPN Triple Diffused Planar Silicon Transistor 2SC3895 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit mm High breakdown voltage (VCBO=1500V). 2039D High reliability (Adoption of HVP process). [2SC3895] Adoption of MBIT process. 1 Base 2 Collector 3
2sc3810.pdf
DATA SHEET SILICON TRANSISTOR 2SC3810 NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE FEATURES PACKAGE DIMENSIONS (in millimeters) The 2SC3810 is an NPN silicon epitaxial dual transistor having +0.3 5.0 MIN. 3.5-0.2 5.0 MIN. a large-gain-bandwidth product performance in a wide operating 3 2 current range. Dual chips i
2sc3841.pdf
DATA SHEET DATA SHEET SILICON TRANSISTOR 2SC3841 UHF OSCILLATOR AND UHF MIXER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD DESCRIPTION The 2SC3841 is an NPN silicon epitaxial transistor intended for use as PACKAGE DIMENSIONS (Units mm) UHF oscillators and a UHF mixer in a tuner of a TV receiver. The device features stable oscillation and small frequency drift against 2.8 0.2 any c
2sc3809.pdf
DATA SHEET SILICON TRANSISTOR 2SC3809 NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE FEATURES PACKAGE DIMENSIONS (in millimeters) The 2SC3809 is an NPN silicon epitaxial dual transistor having +0.3 5.0 MIN. 3.5-0.2 5.0 MIN. a large-gain-bandwidth product performance in a wide operating 3 2 current range. Dual chips i
2sc3839k.pdf
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2sc3838.pdf
2SC5662 / 2SC4726 / 2SC4083 / Transistors 2SC3838K / 2SC4043S High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz) 2SC5662 / 2SC4726 / 2SC4083 / 2SC3838K / 2SC4043S External dimensions (Units mm) Features 1) High transition frequency. (Typ. fT= 1.5GHz) 2SC5662 1.2 0.2 0.8 0.2 2) Small rbb Cc and high gain. (Typ. 4ps) (2) 3) Small NF. (3) (1) (1) Base 0.15Max. (2) E
2sc3802k.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
2sc4725 2sc5661 2sc4725 2sc4082 2sc3837k.pdf
High-Frequency Amplifier Transistor (20V, 50mA, 1.5GHz) 2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K Features Dimensions (Unit mm) 1) High transition frequency. (Typ. fT = 1.5GHz) 2SC5661 2) Small rbb Cc and high gain. (Typ. 6ps) 3) Small NF. (1) Base Packaging specifications and hFE ROHM VMT3 (2) Emitter Type 2SC5661 2SC4725 2SC4082 2SC3837K (3) Collector Package
2sc3838k.pdf
2SC3838K Datasheet High-Frequency Amplifer Transistor (11V, 50mA, 3.2GHz) lOutline l SOT-346 Parameter Value SC-59 VCEO 11V IC 50mA SMT3 lFeatures lInner circuit l l 1)High transition frequency.(Typ. fT=3.2GHz) 2)Small rbb' Cc and high gain.(Typ.4ps) 3)Small NF. lApplication l UHF FR
2sc5661 2sc4725 2sc4082 2sc3837k.pdf
High-Frequency Amplifier Transistor (20V, 50mA, 1.5GHz) 2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K Features Dimensions (Unit mm) 1) High transition frequency. (Typ. fT = 1.5GHz) 2SC5661 2) Small rbb Cc and high gain. (Typ. 6ps) 3) Small NF. (1) Base Packaging specifications and hFE ROHM VMT3 (2) Emitter Type 2SC5661 2SC4725 2SC4082 2SC3837K (3) Collector Package
2sc4726 2sc5662 2sc4726 2sc4083 2sc3838k.pdf
High-Frequency Amplifier Transistor(11V, 50mA, 3.2GHz) 2SC5662 / 2SC4726 /2SC4083 / 2SC3838K Features Dimensions (Unit mm) 1) High transition frequency. (Typ. fT= 3.2GHz) 2SC5662 1.2 2) Small rbb Cc and high gain. (Typ. 4ps) 0.32 3) Small NF. (3) (1)(2) 0.22 0.13 0.4 0.4 0.5 (1) Base 0.8 (2) Emitter (3) Collector ROHM VMT3 Packaging specifications and
2sc3837k.pdf
2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K Transistors High-Frequency Amplifier Transistor (18V, 50mA, 1.5GHz) 2SC5661 / 2SC4725 / 2SC4082 / 2SC3837K External dimensions (Units mm) Features 1) High transition frequency. (Typ. fT = 1.5GHz) 2SC5661 1.2 0.2 0.8 0.2 2) Small rbb Cc and high gain. (Typ. 6ps) (2) (3) 3) Small NF. (1) (1) Base 0.15Max. ROHM VMT3 (2) Emitter (3
2sc3829.pdf
Transistor 2SC3829 Silicon NPN epitaxial planer type For UHF band low-noise amplification Unit mm +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features Low noise figure NF. High gain. 1 High transition frequency fT. 3 Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 2 packing. Absolute Maxi
2sc3870.pdf
Power Transistors 2SC3870 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features High-speed switching 3.1 0.1 High collector to base voltage VCBO Wide area of safe operation (ASO) Full-pack package which can be installed to the heat sink with one screw 1.3 0.2 1.4 0.1 +0.2 Abso
2sc3811.pdf
Transistor 2SC3811 Silicon NPN epitaxial planer type For high speed switching Unit mm 5.0 0.2 4.0 0.2 Features High-speed switching. Low collector to emitter saturation voltage VCE(sat). Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 Collector to base voltage VCBO 40 V 0.45 0.1 0.45 0.1 Collector to emitter voltage VCES 40 V 1.27 1.27 Emit
2sc3869.pdf
Power Transistors 2SC3869 Silicon NPN triple diffusion planar type For high-speed switching Unit mm 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features High-speed switching 3.1 0.1 High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with 1.3
2sc3868.pdf
Power Transistors 2SC3868 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features High-speed switching 3.1 0.1 High collector to base voltage VCBO Wide area of safe operation (ASO) Full-pack package which can be installed to the heat sink with one screw 1.3 0.2 1.4 0.1 +0.2 Abso
2sc3824.pdf
Power Transistors 2SC3824, 2SC3824A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 7.0 0.3 3.5 0.2 3.0 0.2 0 to 0.15 2.0 0.2 Features High-speed switching High collector-base voltage (Emitter open) VCBO I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small
2sc3829 e.pdf
Transistor 2SC3829 Silicon NPN epitaxial planer type For UHF band low-noise amplification Unit mm +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features Low noise figure NF. High gain. 1 High transition frequency fT. 3 Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 2 packing. Absolute Maxi
2sc3811 e.pdf
Transistor 2SC3811 Silicon NPN epitaxial planer type For high speed switching Unit mm 5.0 0.2 4.0 0.2 Features High-speed switching. Low collector to emitter saturation voltage VCE(sat). Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 Collector to base voltage VCBO 40 V 0.45 0.1 0.45 0.1 Collector to emitter voltage VCES 40 V 1.27 1.27 Emit
2sc3872.pdf
Power Transistors 2SC3872 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 15.0 0.3 5.0 0.2 Features 11.0 0.2 3.2 High-speed switching High collector to base voltage VCBO 3.2 0.1 Wide area of safe operation (ASO) Full-pack package which can be installed to the heat sink with one screw 2.0 0.2 2.0 0.1 Absolute Maximu
2sc3874.pdf
Power Transistors 2SC3874 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 3.3 0.2 20.0 0.5 5.0 0.3 3.0 Features High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) 1.5 Satisfactory linearity of foward current transfer ratio hFE 1.5 2.0 0.3 Absolute Maximum Ratings (TC=25 C) 2.7
2sc3835.pdf
UTC 2SC3835 NPN EPITAXIAL SILICON TRANSISTOR SWITCH NPN TRANSISTOR APLLICATION *Humidifier,DC-DC converter,and general purpose. 1 TO-3PN 1 BASE 2 COLLECTOR 3 EMITTER ABSOLUTE MAXIMUM RATINGS (Ta=25 C) PARAMETER SYMBOL RATING UNIT Collector-Base Voltage VCBO 200 V Collector-Emitter Voltage VCEO 120 V Emitter-Base Voltage VEBO 8 V Base Current IB 3 A Collector Current 7 A
2sc3838.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SC3838 NPN SILICON TRANSISTOR HIGH-FREQUENCY AMPLIFIER TRANSISTOR 3 FEATURES 1 2 *High transition frequency. *Small rbb Cc and high gain. SOT-23 *Small NF. 3 1 2 SOT-323 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC3838L-x-AE3-R 2SC3838G-x-AE3-R SOT-23 E B C Tape Reel 2SC3
2sc3834.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SC3834 NPN SILICON TRANSISTOR SWITCH NPN TRANSISTOR DESCRIPTION The UTC 2SC3834 is an epitaxial planar type NPN silicon transistor.. FEATURES * Humidifier, DC-DC converter, and general purpose ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Plating Halogen Free 1 2 3 2SC3834L-TA3-T 2SC3834G-TA3-T TO-220
2sc3836.pdf
2SC3836 Silicon NPN Epitaxial Application Low frequency amplifier, switching Outline SPAK 1. Emitter 1 2 2. Collector 3 3. Base 2SC3836 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 15 V Collector current IC 300 mA Collector power dissipation PC 300 mW Ju
2sc3867.pdf
2SC3867 Silicon NPN Epitaxial Application UHF frequency converter Wide band amplifier Outline MPAK 3 1 1. Base 2. Emitter 2 3. Collector 2SC3867 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 20 V Collector to emitter voltage VCEO 11 V Emitter to base voltage VEBO 3V Collector current IC 50 mA Collector power dissipatio
2sc3852.pdf
High hFE LOW VCE (sat) 2SC3852/3852A Silicon NPN Epitaxial Planar Transistor Application Driver for Solenoid and Motor, Series Regulator and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM20(TO220F) Symbol 2SC3852 2SC3852A Unit Symbol Conditions 2SC3852 2SC3852A Unit 0.2 4.2 0.2 10.1 c0.5 2.8 VCBO 80 100 10ma
2sc380tm.pdf
2SC380TM 0.05A , 35V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES High Frequency Amplifier Applications G H Emitter Collector J Base CLASSIFICATION OF hFE A D Millimeter REF. Min. Max. Product-Rank 2SC380TM-R 2SC380TM-O 2SC380TM-Y B A 4.40 4.70
2sc388.pdf
2SC388 0.05A , 30V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES TV Final picture if amplifier applications G H Emitter Collector Base J A D Millimeter REF. Min. Max. B A 4.40 4.70 B 4.30 4.70 K C 12.70 - D 3.30 3.81 E 0.36 0.56 F 0.36 0.51
2sc3855.pdf
2SC3855 NPN PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SA1491 ABSOLUTE MAXIMUM RATING (Ta=25 C C) C C Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 200 V Collector-Emitter Voltage VCEO 140 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC 10 A Collecto
2sc3854.pdf
2SC3854 NPN PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SA1490 ABSOLUTE MAXIMUM RATING (Ta=25 C C) C C Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 160 V Collector-Emitter Voltage VCEO 120 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC 8 A Collector
2sc3873.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC3873 DESCRIPTION With TO-3PFa package High VCBO High speed switching Good linearity of hFE Wide area of safe operation APPLICATIONS For high speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS
2sc3842.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3842 DESCRIPTION With TO-3PML package High voltage ,high speed High current capability APPLICATIONS For use in TV horizontal output and Power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings (Ta=25 )
2sc3870.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3870 DESCRIPTION With TO-220Fa package High breakdown voltage Wide area of safe operation APPLICATIONS For high speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open
2sc3853.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3853 DESCRIPTION With TO-3PN package Complement to type 2SA1489 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT
2sc3835.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistor 2SC3835 DESCRIPTION Low Collector Saturation Voltage VCE(sat)= 0.5V(Max)@ IC=3A Collector-Emitter Breakdown Voltage- V(BR)CEO= 120V (Min) Good Linearity of hFE APPLICATIONS Designed for use in humidifier , DC/DC converter and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBO
2sc3866.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistor 2SC3866 DESCRIPTION High Breakdown Voltage- V(BR)CBO= 900V(Min) High Switching Speed High Reliability APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Coll
2sc3868.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3868 DESCRIPTION With TO-220Fa package High breakdown voltage Wide area of safe operation APPLICATIONS For high speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open
2sc3855.pdf
Product Specification www.jmnic.com Silicon Power Transistors 2SC3855 DESCRIPTION With TO-3PN package Complement to type 2SA1491 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE U
2sc3834.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistor 2SC3834 DESCRIPTION Low Collector Saturation Voltage VCE(sat)= 0.5V(Max)@ IC=3A Collector-Emitter Breakdown Voltage- V(BR)CEO= 120V (Min) Good Linearity of hFE APPLICATIONS Designed for use in humidifier , DC/DC converter and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBO
2sc3850.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3850 DESCRIPTION With TO-3PN package Good linearity of hFE Low collector saturation voltage APPLICATIONS For power switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= )
2sc3851.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3851 2SC3851A DESCRIPTION With TO-220F package Complement to type 2SA1488/1488A APPLICATIONS Audio and PPC high voltage power supply ,and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMET
2sc3857.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3857 DESCRIPTION With MT-200 package Complement to type 2SA1493 APPLICATIONS Audio and general purpose PINNING(see Fig.2) PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITION
2sc3856.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3856 DESCRIPTION With TO-3PN package Complement to type 2SA1492 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT
2sc3858.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC3858 DESCRIPTION With MT-200 package Complement to type 2SA1494 APPLICATIONS Audio and general purpose PINNING(see Fig.2) PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 Emitter Absolute maximum ratings (Ta=25 C) SYMBOL PARAMETER
2sc3854.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3854 DESCRIPTION With TO-3PN package Complement to type 2SA1490 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT
2sc3874.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3874 DESCRIPTION With TO-3PL package High speed switching High VCBO Wide area of safe operation APPLICATIONS For high-speed switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PL) and symbol 3 Emitter Absolute maximum ratin
2sc3832.pdf
2SC3832 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor) Application Switching Regulator and General Purpose External Dimensions MT-25(TO220) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol Conditions 2SC3832 Unit Symbol 2SC3832 Unit 0.2 4.8 0.2 10.2 0.1 ICBO VCBO 500 V VCB=500V 100max A 2.
2sc3831.pdf
2SC3831 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor) Application Switching Regulator and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions MT-100(TO3P) Symbol 2SC3831 Unit Symbol Conditions 2SC3831 Unit 0.2 4.8 0.4 15.6 0.1 9.6 2.0 VCBO 600 V VCB=600V 1max mA ICBO
2sc3833.pdf
2SC3833 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor) Application Switching Regulator and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions MT-100(TO3P) Symbol 2SC3833 Unit Symbol Conditions 2SC3833 Unit 0.2 4.8 0.4 15.6 0.1 9.6 2.0 VCBO 500 V VCB=500V 100max A
2sc3830.pdf
2SC3830 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor) Application Switching Regulator and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions MT-25(TO220) Symbol 2SC3830 Unit Symbol Conditions 2SC3830 Unit 0.2 4.8 0.2 10.2 0.1 VCBO 600 V ICBO VCB=600V 1max 2.0 mA VC
2sc3835.pdf
2SC3835 Silicon NPN Triple Diffused Planar Transistor (Switching Transistor) Application Humidifier, DC-DC Converter, and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions MT-100(TO3P) Symbol Ratings Unit Unit Symbol Conditions Ratings 0.2 4.8 0.4 15.6 VCBO 200 VCB=200V 100max A 0.1 V ICBO 9.6 2.0 VCEO 120 IEBO
2sc3834.pdf
2SC3834 Silicon NPN Triple Diffused Planar Transistor (Switching Transistor) Application Humidifier, DC-DC Converter, and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions MT-25(TO220) Symbol Symbol 2SC3834 Unit Conditions 2SC3834 Unit 0.2 4.8 0.2 10.2 0.1 2.0 ICBO VCBO 200 V VCB=200V 100max A IEBO 100max A
2sc3852.pdf
High hFE LOW VCE (sat) 2SC3852/3852A Silicon NPN Epitaxial Planar Transistor Application Driver for Solenoid and Motor, Series Regulator and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM20(TO220F) Symbol 2SC3852 2SC3852A Unit Symbol Conditions 2SC3852 2SC3852A Unit 0.2 4.2 0.2 10.1 c0.5 2.8 VCBO 80 100 10ma
2sc3851.pdf
2SC3851/3851A Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1488/A) Application Audio and PPC High Voltage Power Supply, and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM20(TO220F) Symbol 2SC3851A Unit Symbol Conditions 2SC3851 2SC3851A Unit 2SC3851 0.2 4.2 0.2 10.1 c0.5 2.8 VCBO 100 V 100max
2sc3857.pdf
2SC3857 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1493) Application Audio and General Purpose External Dimensions MT-200 Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol 2SC3857 Symbol Conditions 2SC3857 Unit Unit 0.2 6.0 0.3 36.4 VCBO 200 ICBO VCB=200V 100max A V 0.2 24.4 2.1 0.1 VCEO 200 IEBO VEB=6V 100m
2sc3856.pdf
2SC3856 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1492) Application Audio and General Purpose External Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol Symbol 2SC3856 Unit Conditions 2SC3856 Unit 0.2 4.8 0.4 15.6 ICBO 0.1 VCBO 200 V VCB=200V 100max A 9.6 2.0 IEBO VCEO 180 V VEB=6V 100max
2sc3858.pdf
2SC3858 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1494) Application Audio and General Purpose (Ta=25 C) Absolute maximum ratings (Ta=25 C) Electrical Characteristics External Dimensions MT-200 Symbol 2SC3858 Unit Symbol Conditions 2SC3858 Unit 0.2 6.0 0.3 36.4 VCBO ICBO VCB=200V 100max A 200 V 0.2 24.4 2.1 0.1 2- 3.2 9 VCEO IEBO VEB=
2sc3890.pdf
2SC3890 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application Switching Regulator and General Purpose External Dimensions FM20(TO220F) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol 2SC3890 Unit Symbol Conditions 2SC3890 Unit 0.2 4.2 0.2 10.1 c0.5 2.8 VCBO 500 V VCB=500V 100max A ICBO
2sc3838.pdf
Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM3838 MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter Voltage VCEO 11 Vdc C
2sc388.pdf
2SC388(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features TV final pictureif amplifier applications MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Emitter Voltage 30 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 4 V IC Collector Current -Continuous 50 mA Dimensions in inches a
2sc3838.pdf
2SC3838 COLLECTOR High-Frequency Amplifier Transistor 3 3 NPN Silicon 1 1 P b Lead(Pb)-Free 2 BASE 2 SOT-23 EMITTER MAXIMUM RATINGS (Ta=25 C) Rating Symbol Value Unit V Collector-Emitter Voltage CEO 11 V Collector-Base Voltage VCBO 20 V Emitter-Base Voltage VEBO 3.0 V IC mA Collector Current-Continuous 50 THERMAL CHARACTERISTICS Characteristics Symbol Value Unit T
2sc380tm.pdf
2SC380TM Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features G =29dB( )(f=10.7MHz) pe High power Gain Gpe=29dB(Typ.)(f=10.7MHz).. / Applications High frequency amplifier applications.
2sc383tm.pdf
2SC383TM(BR3DG383TMK) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features G =33dB( )(f=45MHz),h pe FE High gain Gpe=33dB(Typ)(f=45MHz),good linearity of hFE.. / Applications TV final picture IF
2sc3834f.pdf
2SC3834F(BR3DA3834F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features / Applications - Humidifier, DC-DC converter, and general purpose. / Equivalent Circuit /
l2sc3838qlt1g.pdf
LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor L2SC3838QLT1G Features 1.High transition frequency.(Typ.fT=3.2GHz) S-L2SC3838QLT1G 2.Small rbb Cc and high gain.(Typ.4ps) 3.Small NF. 4.We declare that the material of product compliance with RoHS requirements. 3 4.S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AE
l2sc3838lt1g.pdf
LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor Features L2SC3838LT1G 1.High transition frequency.(Typ.fT=3.2GHz) S-L2SC3838LT1G 2.Small rbb Cc and high gain.(Typ.4ps) 3.Small NF. 4.We declare that the material of product compliance with RoHS requirements. 3 5.S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-
s-l2sc3837t1g.pdf
LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor Features L2SC3837T1G 1.High transition frequency.(Typ.fT=1.5GHz) 2.Small rbb Cc and high gain.(Typ.6ps) S-L2SC3837T1G 3.Small NF. 4.We declare that the material of product compliance with RoHS requirements. 5.S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101
l2sc3838lt1g l2sc3838lt3g.pdf
LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor Features L2SC3838LT1G 1.High transition frequency.(Typ.fT=3.2GHz) S-L2SC3838LT1G 2.Small rbb Cc and high gain.(Typ.4ps) 3.Small NF. 4.We declare that the material of product compliance with RoHS requirements. 3 5.S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-
l2sc3837lt1g.pdf
LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor Features L2SC3837LT1G 1.High transition frequency.(Typ.fT=1.5GHz) S-L2SC3837LT1G 2.Small rbb Cc and high gain.(Typ.6ps) 3.Small NF. 4.We declare that the material of product compliance with RoHS requirements. 3 5.S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-
l2sc3837qlt1g.pdf
LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor Features L2SC3837QLT1G 1.High transition frequency.(Typ.fT=1.5GHz) S-L2SC3837QLT1G 2.Small rbb Cc and high gain.(Typ.6ps) 3.Small NF. 4.We declare that the material of product compliance with RoHS requirements. 3 5.S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AE
l2sc3837t1g.pdf
LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor Features L2SC3837T1G 1.High transition frequency.(Typ.fT=1.5GHz) 2.Small rbb Cc and high gain.(Typ.6ps) S-L2SC3837T1G 3.Small NF. 4.We declare that the material of product compliance with RoHS requirements. 5.S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101
l2sc3838nlt1g.pdf
LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor L2SC3838NLT1G Features 1.High transition frequency.(Typ.fT=3.2GHz) 3 2.Small rbb Cc and high gain.(Typ.4ps) 3.Small NF. 4.We declare that the material of product compliance with RoHS requirements. 1 2 MAXIMUM RATINGS (T = 25 C unless otherwise noted) A Parameter Symbol Value Unit Collector-Base Voltage V 20 V CBO
2sc3829.pdf
SMD Type Transistors NPN Transistors 2SC3829 SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features Collector Current Capability IC=80mA 1 2 Collector Emitter Voltage VCEO=10V +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collect
2sc3838.pdf
SMD Type Transistors NPN Transistors 2SC3838 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 Features 3 High transition frequency. Small rbb Cc and high gain. Small NF. 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Coll
2sc3841.pdf
SMD Type Transistors NPN Transistors 2SC3841 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=30mA Collector Emitter Voltage VCEO=12V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collect
2sc3867.pdf
SMD Type Transistors NPN Transistors 2SC3867 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=50mA 1 2 Collector Emitter Voltage VCEO=11V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Colle
2sc3862.pdf
SMD Type Transistors NPN Transistors 2SC3862 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=50mA Collector Emitter Voltage VCEO=15V 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collecto
2sc3803.pdf
SMD Type Transistors NPN Transistors 2SC3803 1.70 0.1 Features High transition frequency fT = 200 MHz Low collector output capacitance Cob = 3.5 pF 0.42 0.1 0.46 0.1 Complementary to 2SA1483 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 45
2sc3863.pdf
SMD Type Transistors NPN Transistors 2SC3863 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=100mA 1 2 Collector Emitter Voltage VCEO=50V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 Complementary to 2SA1502 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collecto
2sc3834f 3da3834f.pdf
2SC3834F(3DA3834F) NPN /SILICON NPN TRANSISTOR - Purpose Humidifier, DC-DC converter, and general purpose. /Absolute Maximum Ratings(Ta=25 ) Symbol Rating Unit V CBO 200 V V CEO 120 V V 8.0 V EBO I 7.0 A C I 3.0 A B P (Tc=25 )
2sc3852 3da3852r.pdf
2SC3852(3DA3852R) NPN /SILICON NPN TRANSISTOR Application Driver for solenoid and motor, series regulator and general purpose. , Features High h , low V FE CE(sat). /Absolute maximum ratings(Ta=25 ) Symbo
2sc3834 3da3834.pdf
2SC3834(3DA3834) NPN /SILICON NPN TRANSISTOR - Purpose Humidifier, DC-DC converter, and general purpose. /Absolute Maximum Ratings(Ta=25 ) Symbol Rating Unit V CBO 200 V V CEO 120 V V 8.0 V EBO I 7.0 A C I 3.0 A B P (Tc=25 ) 50
gst2sc3838.pdf
GST2SC3838 High-Frequency Amplifier Transistor NPN Silicon Product Description Features This device is designed as a general purpose Collector-Emitter Voltage 11V amplifier and switch. Collector Current 50mA Lead(Pb)-Free Packages & Pin Assignments GST2SC3838F(SOT-23) Pin Description 1 Base 2 Emitter 3 Collector Marking Information P/N Package Part Marking GST
2sc3834t1tl.pdf
2SC3834T1TL Silicon NPN Power Transistor DESCRIPTION Low Collector Saturation Voltage V = 0.5V(Max)@ I =3A CE(sat) C Collector-Emitter Breakdown Voltage- V = 120V (Min) (BR)CEO Good Linearity of h FE APPLICATIONS Designed for use in humidifier , DC/DC converter and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collec
2sc3856t4tl.pdf
2SC3856T4TL Silicon NPN Power Transistor DESCRIPTION High Collector-Emitter Breakdown Voltage- V =180V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1492 APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 200 V CBO V Collector-Emitter Voltage 180 V CEO V E
2sc3835t4tl.pdf
2SC3835T4TL Silicon NPN Power Transistor DESCRIPTION Low Collector Saturation Voltage V = 0.5V(Max)@ I =3A CE(sat) C Collector-Emitter Breakdown Voltage- V = 120V (Min) (BR)CEO Good Linearity of h FE APPLICATIONS Designed for use in humidifier , DC/DC converter and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collec
2sc3856o 2sc3856p 2sc3856y.pdf
SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC3856 DESCRIPTION High Collector-Emitter Breakdown Voltage- V =180V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1492 APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 200 V CBO V Collector
2sc3866.pdf
SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC3866 DESCRIPTION High Breakdown Voltage V = 900V(Min) (BR)CBO High Switching Speed High Reliability APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base V
2sc3832.pdf
isc Silicon NPN Power Transistor 2SC3832 DESCRIPTION Low Collector Saturation Voltage V = 0.5V(Max)@ I = 3A CE(sat) C Collector-Emitter Breakdown Voltage- V = 500V (Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUT
2sc3886.pdf
isc Silicon NPN Power Transistor 2SC3886 DESCRIPTION High Breakdown Voltage- V = 600V (Min) CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Horizontal deflection output for high resolution display. High speed switching regulator output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM
2sc3866-220f.pdf
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3866 DESCRIPTION With TO-220F package High speed switching High voltage High reliability APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (
2sc3831.pdf
isc Silicon NPN Power Transistor 2SC3831 DESCRIPTION Low Collector Saturation Voltage V = 0.5V(Max)@ I = 5A CE(sat) C Collector-Emitter Breakdown Voltage- V = 500V (Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUT
2sc3833.pdf
isc Silicon NPN Power Transistor 2SC3833 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER
2sc3853.pdf
isc Silicon NPN Power Transistor 2SC3853 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO DC Current Gain- h = 50(Min)@ I = 2A FE C Complement to Type 2SA1489 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY
2sc3830.pdf
isc Silicon NPN Power Transistor 2SC3830 DESCRIPTION Low Collector Saturation Voltage V = 0.5V(Max)@ I =2A CE(sat) C Collector-Emitter Breakdown Voltage- V = 500V (Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE
2sc3835.pdf
isc Silicon NPN Power Transistor 2SC3835 DESCRIPTION Low Collector Saturation Voltage V = 0.5V(Max)@ I =3A CE(sat) C Collector-Emitter Breakdown Voltage- V = 120V (Min) (BR)CEO Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in humidifier , DC/DC converter and general purpose appl
2sc3822.pdf
isc Silicon NPN Power Transistor 2SC3822 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V (Min) (BR)CEO High Speed Switching High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators DC-DC converters Solid state relay General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS
2sc3866a.pdf
isc Silicon NPN Power Transistor 2SC3866A DESCRIPTION High Breakdown Voltage V = 1000V(Min) (BR)CBO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(T =25
2sc3892a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3892A DESCRIPTION With TO-3P(H)IS package Built-in damper diode High voltage ,high speed APPLICATIONS Horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3P(H)IS) and symbol 3 Emitter Absolute maximum ratings (Ta=25 )
2sc3835g.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3835G DESCRIPTION Low Collector Saturation Voltage VCE(sat)= 0.5V(Max)@ IC=3A Collector-Emitter Breakdown Voltage- V(BR)CEO= 120V (Min) Good Linearity of hFE APPLICATIONS Designed for use in humidifier , DC/DC converter and general purpose applications ABSOLUTE MAXIMUM RATINGS
2sc3852-220fa.pdf
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3852 DESCRIPTION With TO-220Fa package Low collector saturation voltage High hFE APPLICATIONS Driver for solenoid and motor,series regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute
2sc3838.pdf
INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3838 DESCRIPTION Low Noise NF = 3.5 dB TYP. @V = 6 V, I = 2 mA, f = 500 MHz CE C High Current-Gain Bandwidth Product f = 3.2 GHz TYP. @V = 10 V, I = 10 mA, f = 500 MHz T CE C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in low-n
2sc3855.pdf
isc Silicon NPN Power Transistor 2SC3855 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 140V(Min) (BR)CEO DC Current Gain- h = 50(Min)@ I = 3A FE C Complement to Type 2SA1491 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a S
2sc3834.pdf
isc Silicon NPN Power Transistor 2SC3834 DESCRIPTION Low Collector Saturation Voltage V = 0.5V(Max)@ I =3A CE(sat) C Collector-Emitter Breakdown Voltage- V = 120V (Min) (BR)CEO Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in humidifier , DC/DC converter and general purpose appl
2sc3821.pdf
isc Silicon NPN Power Transistor 2SC3821 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators DC-DC converter Solid state relay General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(T
2sc3894.pdf
isc Silicon NPN Power Transistor 2SC3894 DESCRIPTION High Breakdown Voltage- V = 1500V(Min) (BR)CBO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Ultrahigh-definition CRT display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN
2sc3841.pdf
INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3841 DESCRIPTION High Current-Gain Bandwidth Product f = 4 GHz TYP. T Low Output Capacitance- C = 1.5 pF TYP. OB Low Base Time Constant r C = 4.0 ps TYP. bb C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as UHF osc
2sc3850.pdf
isc Silicon NPN Power Transistor 2SC3850 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) Good Linearity of h FE High Collector Current Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PA
2sc3852.pdf
isc Silicon NPN Power Transistor 2SC3852 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO DC Current Gain- h = 200(Min)@ I = 0.5A FE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Driver for solenoid and motor, series regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a
2sc3851.pdf
isc Silicon NPN Power Transistor 2SC3851 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO DC Current Gain- h = 40(Min)@ I = 1A FE C Complement to Type 2SA1488 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY
2sc3857.pdf
isc Silicon NPN Power Transistor 2SC3857 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 200V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1493 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Coll
2sc3886a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3886A DESCRIPTION With TO-3P(H)IS package High voltage ,high speed APPLICATIONS Horizontal deflection output for high resolution display High speed switching regulator output applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3P(H)IS) and symbol 3
2sc3883.pdf
isc Silicon NPN Power Transistor 2SC3883 DESCRIPTION High Breakdown Voltage- V = 800V (Min) CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Horizontal deflection output for high resolution display. High speed switching regulator output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM
2sc3843.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3843 DESCRIPTION High Breakdown Voltage High Switching Speed Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for silicon high speed transistor ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI
2sc3851 2sc3851a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3851 2SC3851A DESCRIPTION With TO-220F package Complement to type 2SA1488/1488A APPLICATIONS Audio and PPC high voltage power supply ,and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 )
2sc3856.pdf
isc Silicon NPN Power Transistor 2SC3856 DESCRIPTION High Collector-Emitter Breakdown Voltage- V =180V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1492 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE
2sc3858.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3858 DESCRIPTION With MT-200 package Complement to type 2SA1494 APPLICATIONS Audio and general purpose PINNING(see Fig.2) PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 Emitter Absolute maximum ratings (Ta=25 C) SYMBOL
2sc3862.pdf
INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3862 DESCRIPTION High Gain Bandwidth Product f = 2400 MHz TYP. T 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS TV tuner, UHF mixer applications. VHF UHF band RF amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE
2sc3890.pdf
isc Silicon NPN Power Transistor 2SC3890 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO Low Collector Saturation Voltage- V = 0.5V(Max)@ I = 3A CE(sat) C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUT
2sc3884.pdf
isc Silicon NPN Power Transistor 2SC3884 DESCRIPTION High Breakdown Voltage- V = 1400V (Min) CBO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Horizontal deflection output for high resolution display. High speed switching regulator output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARA
2sc3854.pdf
isc Silicon NPN Power Transistor 2SC3854 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1490 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Coll
2sc3874.pdf
isc Product Specification isc Silicon NPN Power Transistor 2SC3874 DESCRIPTION Silicon NPN triple diffusion planar type High Switching Speed Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage high-speed switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI
2sc3885.pdf
isc Silicon NPN Power Transistor 2SC3885 DESCRIPTION High Breakdown Voltage V = 1400V (Min) CBO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Horizontal deflection output for high resolution display. High speed switching regulator output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM
2sc3851a.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3851A DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO DC Current Gain- h = 40(Min)@ I = 1A FE C Complement to Type 2SA1488A 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose appli
2sc3893a.pdf
isc Silicon NPN Power Transistor 2SC3893A DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER
2sc3892.pdf
isc Silicon NPN Power Transistor 2SC3892 DESCRIPTION High Breakdown Voltage- V = 1400V (Min) CBO High Switching Speed Low Saturation Voltage Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER
2sc3893.pdf
isc Silicon NPN Power Transistor 2SC3893 DESCRIPTION High Breakdown Voltage- V = 1400V (Min) CBO High Switching Speed Low Saturation Voltage Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER
2sc3852a.pdf
isc Silicon NPN Power Transistor 2SC3852A DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO DC Current Gain- h = 200(Min)@ I = 0.5A FE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Driver for solenoid and motor, series regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a
Другие транзисторы: 2SC3792, 2SC3793, 2SC3794, 2SC3795, 2SC3796, 2SC3797, 2SC3798, 2SC3799, 2N2222A, 2SC380, 2SC3800, 2SC3801, 2SC3802, 2SC3803, 2SC3804, 2SC3805, 2SC3806
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