2SC3803 - Даташиты. Аналоги. Основные параметры

2SC3803 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3803 High Frequency Amplifier Applications Unit mm Video Amplifier Applications High Speed Switching Applications High transition frequency fT = 200 MHz (typ.) Low collector output capacitance C = 3.5 pF (typ.) ob Complementary to 2SA1483 Maximum Ratings (Ta = 25 C) Characteristics Sym

SMD Type Transistors NPN Transistors 2SC3803 1.70 0.1 Features High transition frequency fT = 200 MHz Low collector output capacitance Cob = 3.5 pF 0.42 0.1 0.46 0.1 Complementary to 2SA1483 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 45

2SC380TM TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC380TM High Frequency Amplifier Applications Unit mm High power gain Gpe = 29dB (typ.) (f = 10.7 MHz) Recommended for FM IF, OSC stage and AM CONV. IF stage. Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 35 V Collector-emitter voltage

2SC3805 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3805 TV Horizontal Deflection Output Applications Unit mm TV Chroma Output Applications High voltage VCEO = 300 V Low output capacitance C = 3.0 pF (typ.) ob Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 300 V Collector-emitter voltage VCEO 300 V

Ordering number EN2105A NPN Epitaxial Planar Silicon Transistor 2SC3808 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Low frequency general-purpose amplifiers, drivers. unit mm 2043A Features [2SC3808] Large current capacity (IC=2A). Adoption of MBIT process. High DC current gain (hFE=800 to 3200). Low collector-to

Ordering number EN2018A NPN Epitaxial Planar Silicon Transistor 2SC3807 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Low frequency general-purpose amplifiers, drivers. unit mm 2043A Features [2SC3807] Large current capacity (IC=2A). Adoption of MBIT process. High DC current gain (hFE=800 to 3200). Low collector-to

DATA SHEET SILICON TRANSISTOR 2SC3809 NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE FEATURES PACKAGE DIMENSIONS (in millimeters) The 2SC3809 is an NPN silicon epitaxial dual transistor having +0.3 5.0 MIN. 3.5-0.2 5.0 MIN. a large-gain-bandwidth product performance in a wide operating 3 2 current range. Dual chips i

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

2SC380TM 0.05A , 35V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES High Frequency Amplifier Applications G H Emitter Collector J Base CLASSIFICATION OF hFE A D Millimeter REF. Min. Max. Product-Rank 2SC380TM-R 2SC380TM-O 2SC380TM-Y B A 4.40 4.70

2SC380TM Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features G =29dB( )(f=10.7MHz) pe High power Gain Gpe=29dB(Typ.)(f=10.7MHz).. / Applications High frequency amplifier applications.