2SC3829 datasheet и подбор замены

 ..1. Size:38K  panasonic
 2sc3829.pdf 

Transistor 2SC3829 Silicon NPN epitaxial planer type For UHF band low-noise amplification Unit mm +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features Low noise figure NF. High gain. 1 High transition frequency fT. 3 Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 2 packing. Absolute Maxi

 ..2. Size:42K  panasonic
 2sc3829 e.pdf 

Transistor 2SC3829 Silicon NPN epitaxial planer type For UHF band low-noise amplification Unit mm +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features Low noise figure NF. High gain. 1 High transition frequency fT. 3 Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 2 packing. Absolute Maxi

 ..3. Size:626K  kexin
 2sc3829.pdf 

SMD Type Transistors NPN Transistors 2SC3829 SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features Collector Current Capability IC=80mA 1 2 Collector Emitter Voltage VCEO=10V +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collect

 8.1. Size:167K  1
 2sc3822.pdf 

 8.2. Size:119K  1
 2sc3821.pdf 

 8.3. Size:86K  sanyo
 2sc3820.pdf 

Ordering number EN2544B NPN Epitaxial Planar Type Silicon Transistor 2SC3820 High hFE, AF Amplifier Applications Applications Package Dimensions Drivers, muting circuits. unit mm 2033 Features [2SC3820] Adoption of FBET and MBIT processes. High DC current gain (hFE=800 to 3200). Low collector-to-emitter saturation voltage (VCE(sat) 0.5V). High VEBO (VEBO 15

 8.4. Size:100K  panasonic
 2sc3824.pdf 

Power Transistors 2SC3824, 2SC3824A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 7.0 0.3 3.5 0.2 3.0 0.2 0 to 0.15 2.0 0.2 Features High-speed switching High collector-base voltage (Emitter open) VCBO I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small

 8.5. Size:212K  inchange semiconductor
 2sc3822.pdf 

isc Silicon NPN Power Transistor 2SC3822 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V (Min) (BR)CEO High Speed Switching High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators DC-DC converters Solid state relay General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS

 8.6. Size:212K  inchange semiconductor
 2sc3821.pdf 

isc Silicon NPN Power Transistor 2SC3821 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators DC-DC converter Solid state relay General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(T