Биполярный транзистор 2SC3847
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC3847
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 85
W
Макcимально допустимое напряжение коллектор-база (Ucb): 1200
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 800
V
Макcимальный постоянный ток коллектора (Ic): 10
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 15
MHz
Статический коэффициент передачи тока (hfe): 100
Корпус транзистора:
TO218
Аналоги (замена) для 2SC3847
2SC3847
Datasheet (PDF)
8.1. Size:96K nec
2sc3841.pdf DATA SHEETDATA SHEETSILICON TRANSISTOR2SC3841UHF OSCILLATOR AND UHF MIXERNPN SILICON EPITAXIAL TRANSISTORMINI MOLDDESCRIPTIONThe 2SC3841 is an NPN silicon epitaxial transistor intended for use asPACKAGE DIMENSIONS(Units: mm)UHF oscillators and a UHF mixer in a tuner of a TV receiver.The device features stable oscillation and small frequency drift against2.80.2any c
8.3. Size:146K jmnic
2sc3842.pdf JMnic Product Specification Silicon NPN Power Transistors 2SC3842 DESCRIPTION With TO-3PML package High voltage ,high speed High current capability APPLICATIONS For use in TV horizontal output and Power switching applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 EmitterAbsolute maximum ratings (Ta=25)
8.4. Size:1210K kexin
2sc3841.pdf SMD Type TransistorsNPN Transistors2SC3841SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13 Features Collector Current Capability IC=30mA Collector Emitter Voltage VCEO=12V 1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collect
8.5. Size:177K inchange semiconductor
2sc3842.pdf INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3842DESCRIPTIONHigh Breakdown VoltageHigh Switching SpeedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in TV horizontal output and powerSwitching applications.ABSOLUTE MAXIMUM RATINGS(T =25
8.6. Size:185K inchange semiconductor
2sc3841.pdf INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC3841DESCRIPTIONHigh Current-Gain Bandwidth Product:f = 4 GHz TYP.TLow Output Capacitance-C = 1.5 pF TYP.OBLow Base Time Constant:r C = 4.0 ps TYP.bb C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as UHF osc
8.7. Size:178K inchange semiconductor
2sc3843.pdf INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3843DESCRIPTIONHigh Breakdown VoltageHigh Switching SpeedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for silicon high speed transistorABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI
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