2SC385 datasheet, аналоги, основные параметры
Наименование производителя: 2SC385 📄📄
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.2 W
Макcимально допустимое напряжение коллектор-база (Ucb): 20 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 15 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 2 V
Макcимальный постоянный ток коллектора (Ic): 0.02 A
Предельная температура PN-перехода (Tj): 125 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 300 MHz
Ёмкость коллекторного перехода (Cc): 4 pf
Статический коэффициент передачи тока (hFE): 80
Корпус транзистора: TO92
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Аналоги (замена) для 2SC385
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2SC385 даташит
0.3. Size:23K no
2sc3852.pdf 
High hFE LOW VCE (sat) 2SC3852/3852A Silicon NPN Epitaxial Planar Transistor Application Driver for Solenoid and Motor, Series Regulator and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM20(TO220F) Symbol 2SC3852 2SC3852A Unit Symbol Conditions 2SC3852 2SC3852A Unit 0.2 4.2 0.2 10.1 c0.5 2.8 VCBO 80 100 10ma
0.4. Size:25K wingshing
2sc3855.pdf 
2SC3855 NPN PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SA1491 ABSOLUTE MAXIMUM RATING (Ta=25 C C) C C Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 200 V Collector-Emitter Voltage VCEO 140 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC 10 A Collecto
0.5. Size:25K wingshing
2sc3854.pdf 
2SC3854 NPN PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SA1490 ABSOLUTE MAXIMUM RATING (Ta=25 C C) C C Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 160 V Collector-Emitter Voltage VCEO 120 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC 8 A Collector
0.6. Size:145K jmnic
2sc3853.pdf 
JMnic Product Specification Silicon NPN Power Transistors 2SC3853 DESCRIPTION With TO-3PN package Complement to type 2SA1489 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT
0.7. Size:120K jmnic
2sc3855.pdf 
Product Specification www.jmnic.com Silicon Power Transistors 2SC3855 DESCRIPTION With TO-3PN package Complement to type 2SA1491 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE U
0.8. Size:150K jmnic
2sc3850.pdf 
JMnic Product Specification Silicon NPN Power Transistors 2SC3850 DESCRIPTION With TO-3PN package Good linearity of hFE Low collector saturation voltage APPLICATIONS For power switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= )
0.9. Size:180K jmnic
2sc3851.pdf 
JMnic Product Specification Silicon NPN Power Transistors 2SC3851 2SC3851A DESCRIPTION With TO-220F package Complement to type 2SA1488/1488A APPLICATIONS Audio and PPC high voltage power supply ,and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMET
0.10. Size:233K jmnic
2sc3857.pdf 
JMnic Product Specification Silicon NPN Power Transistors 2SC3857 DESCRIPTION With MT-200 package Complement to type 2SA1493 APPLICATIONS Audio and general purpose PINNING(see Fig.2) PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITION
0.11. Size:179K jmnic
2sc3856.pdf 
JMnic Product Specification Silicon NPN Power Transistors 2SC3856 DESCRIPTION With TO-3PN package Complement to type 2SA1492 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT
0.12. Size:92K jmnic
2sc3858.pdf 
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC3858 DESCRIPTION With MT-200 package Complement to type 2SA1494 APPLICATIONS Audio and general purpose PINNING(see Fig.2) PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 Emitter Absolute maximum ratings (Ta=25 C) SYMBOL PARAMETER
0.13. Size:145K jmnic
2sc3854.pdf 
JMnic Product Specification Silicon NPN Power Transistors 2SC3854 DESCRIPTION With TO-3PN package Complement to type 2SA1490 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT
0.14. Size:23K sanken-ele
2sc3852.pdf 
High hFE LOW VCE (sat) 2SC3852/3852A Silicon NPN Epitaxial Planar Transistor Application Driver for Solenoid and Motor, Series Regulator and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM20(TO220F) Symbol 2SC3852 2SC3852A Unit Symbol Conditions 2SC3852 2SC3852A Unit 0.2 4.2 0.2 10.1 c0.5 2.8 VCBO 80 100 10ma
0.15. Size:24K sanken-ele
2sc3851.pdf 
2SC3851/3851A Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1488/A) Application Audio and PPC High Voltage Power Supply, and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM20(TO220F) Symbol 2SC3851A Unit Symbol Conditions 2SC3851 2SC3851A Unit 2SC3851 0.2 4.2 0.2 10.1 c0.5 2.8 VCBO 100 V 100max
0.16. Size:24K sanken-ele
2sc3857.pdf 
2SC3857 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1493) Application Audio and General Purpose External Dimensions MT-200 Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol 2SC3857 Symbol Conditions 2SC3857 Unit Unit 0.2 6.0 0.3 36.4 VCBO 200 ICBO VCB=200V 100max A V 0.2 24.4 2.1 0.1 VCEO 200 IEBO VEB=6V 100m
0.17. Size:24K sanken-ele
2sc3856.pdf 
2SC3856 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1492) Application Audio and General Purpose External Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol Symbol 2SC3856 Unit Conditions 2SC3856 Unit 0.2 4.8 0.4 15.6 ICBO 0.1 VCBO 200 V VCB=200V 100max A 9.6 2.0 IEBO VCEO 180 V VEB=6V 100max
0.18. Size:24K sanken-ele
2sc3858.pdf 
2SC3858 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1494) Application Audio and General Purpose (Ta=25 C) Absolute maximum ratings (Ta=25 C) Electrical Characteristics External Dimensions MT-200 Symbol 2SC3858 Unit Symbol Conditions 2SC3858 Unit 0.2 6.0 0.3 36.4 VCBO ICBO VCB=200V 100max A 200 V 0.2 24.4 2.1 0.1 2- 3.2 9 VCEO IEBO VEB=
0.19. Size:198K foshan
2sc3852 3da3852r.pdf 
2SC3852(3DA3852R) NPN /SILICON NPN TRANSISTOR Application Driver for solenoid and motor, series regulator and general purpose. , Features High h , low V FE CE(sat). /Absolute maximum ratings(Ta=25 ) Symbo
0.20. Size:1824K cn sps
2sc3856t4tl.pdf 
2SC3856T4TL Silicon NPN Power Transistor DESCRIPTION High Collector-Emitter Breakdown Voltage- V =180V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1492 APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 200 V CBO V Collector-Emitter Voltage 180 V CEO V E
0.21. Size:430K cn sptech
2sc3856o 2sc3856p 2sc3856y.pdf 
SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC3856 DESCRIPTION High Collector-Emitter Breakdown Voltage- V =180V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1492 APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 200 V CBO V Collector
0.22. Size:212K inchange semiconductor
2sc3853.pdf 
isc Silicon NPN Power Transistor 2SC3853 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO DC Current Gain- h = 50(Min)@ I = 2A FE C Complement to Type 2SA1489 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY
0.23. Size:152K inchange semiconductor
2sc3852-220fa.pdf 
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3852 DESCRIPTION With TO-220Fa package Low collector saturation voltage High hFE APPLICATIONS Driver for solenoid and motor,series regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute
0.24. Size:212K inchange semiconductor
2sc3855.pdf 
isc Silicon NPN Power Transistor 2SC3855 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 140V(Min) (BR)CEO DC Current Gain- h = 50(Min)@ I = 3A FE C Complement to Type 2SA1491 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a S
0.25. Size:213K inchange semiconductor
2sc3850.pdf 
isc Silicon NPN Power Transistor 2SC3850 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) Good Linearity of h FE High Collector Current Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PA
0.26. Size:206K inchange semiconductor
2sc3852.pdf 
isc Silicon NPN Power Transistor 2SC3852 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO DC Current Gain- h = 200(Min)@ I = 0.5A FE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Driver for solenoid and motor, series regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a
0.27. Size:206K inchange semiconductor
2sc3851.pdf 
isc Silicon NPN Power Transistor 2SC3851 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO DC Current Gain- h = 40(Min)@ I = 1A FE C Complement to Type 2SA1488 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY
0.28. Size:221K inchange semiconductor
2sc3857.pdf 
isc Silicon NPN Power Transistor 2SC3857 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 200V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1493 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Coll
0.29. Size:144K inchange semiconductor
2sc3851 2sc3851a.pdf 
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3851 2SC3851A DESCRIPTION With TO-220F package Complement to type 2SA1488/1488A APPLICATIONS Audio and PPC high voltage power supply ,and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 )
0.30. Size:217K inchange semiconductor
2sc3856.pdf 
isc Silicon NPN Power Transistor 2SC3856 DESCRIPTION High Collector-Emitter Breakdown Voltage- V =180V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1492 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE
0.31. Size:183K inchange semiconductor
2sc3858.pdf 
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3858 DESCRIPTION With MT-200 package Complement to type 2SA1494 APPLICATIONS Audio and general purpose PINNING(see Fig.2) PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 Emitter Absolute maximum ratings (Ta=25 C) SYMBOL
0.32. Size:212K inchange semiconductor
2sc3854.pdf 
isc Silicon NPN Power Transistor 2SC3854 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1490 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Coll
0.33. Size:182K inchange semiconductor
2sc3851a.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3851A DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO DC Current Gain- h = 40(Min)@ I = 1A FE C Complement to Type 2SA1488A 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose appli
0.34. Size:206K inchange semiconductor
2sc3852a.pdf 
isc Silicon NPN Power Transistor 2SC3852A DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO DC Current Gain- h = 200(Min)@ I = 0.5A FE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Driver for solenoid and motor, series regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a
Другие транзисторы: 2SC3842, 2SC3843, 2SC3844, 2SC3845, 2SC3846, 2SC3847, 2SC3848, 2SC3849, BD136, 2SC3850, 2SC3851, 2SC3851A, 2SC3852, 2SC3852A, 2SC3853, 2SC3854, 2SC3855
