2SC3850 datasheet и подбор замены

 ..1. Size:79K  no
 2sc3850.pdf 

 ..2. Size:150K  jmnic
 2sc3850.pdf 

JMnic Product Specification Silicon NPN Power Transistors 2SC3850 DESCRIPTION With TO-3PN package Good linearity of hFE Low collector saturation voltage APPLICATIONS For power switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= )

 ..3. Size:213K  inchange semiconductor
 2sc3850.pdf 

isc Silicon NPN Power Transistor 2SC3850 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) Good Linearity of h FE High Collector Current Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PA

 8.1. Size:278K  no
 2sc3853.pdf 

 8.2. Size:23K  no
 2sc3852.pdf 

High hFE LOW VCE (sat) 2SC3852/3852A Silicon NPN Epitaxial Planar Transistor Application Driver for Solenoid and Motor, Series Regulator and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM20(TO220F) Symbol 2SC3852 2SC3852A Unit Symbol Conditions 2SC3852 2SC3852A Unit 0.2 4.2 0.2 10.1 c0.5 2.8 VCBO 80 100 10ma

 8.3. Size:25K  wingshing
 2sc3855.pdf 

2SC3855 NPN PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SA1491 ABSOLUTE MAXIMUM RATING (Ta=25 C C) C C Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 200 V Collector-Emitter Voltage VCEO 140 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC 10 A Collecto

 8.4. Size:25K  wingshing
 2sc3854.pdf 

2SC3854 NPN PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SA1490 ABSOLUTE MAXIMUM RATING (Ta=25 C C) C C Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 160 V Collector-Emitter Voltage VCEO 120 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC 8 A Collector

 8.5. Size:145K  jmnic
 2sc3853.pdf 

JMnic Product Specification Silicon NPN Power Transistors 2SC3853 DESCRIPTION With TO-3PN package Complement to type 2SA1489 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT

 8.6. Size:120K  jmnic
 2sc3855.pdf 

Product Specification www.jmnic.com Silicon Power Transistors 2SC3855 DESCRIPTION With TO-3PN package Complement to type 2SA1491 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE U

 8.7. Size:180K  jmnic
 2sc3851.pdf 

JMnic Product Specification Silicon NPN Power Transistors 2SC3851 2SC3851A DESCRIPTION With TO-220F package Complement to type 2SA1488/1488A APPLICATIONS Audio and PPC high voltage power supply ,and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMET

 8.8. Size:233K  jmnic
 2sc3857.pdf 

JMnic Product Specification Silicon NPN Power Transistors 2SC3857 DESCRIPTION With MT-200 package Complement to type 2SA1493 APPLICATIONS Audio and general purpose PINNING(see Fig.2) PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITION

 8.9. Size:179K  jmnic
 2sc3856.pdf 

JMnic Product Specification Silicon NPN Power Transistors 2SC3856 DESCRIPTION With TO-3PN package Complement to type 2SA1492 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT

 8.10. Size:92K  jmnic
 2sc3858.pdf 

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC3858 DESCRIPTION With MT-200 package Complement to type 2SA1494 APPLICATIONS Audio and general purpose PINNING(see Fig.2) PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 Emitter Absolute maximum ratings (Ta=25 C) SYMBOL PARAMETER

 8.11. Size:145K  jmnic
 2sc3854.pdf 

JMnic Product Specification Silicon NPN Power Transistors 2SC3854 DESCRIPTION With TO-3PN package Complement to type 2SA1490 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT

 8.12. Size:23K  sanken-ele
 2sc3852.pdf 

High hFE LOW VCE (sat) 2SC3852/3852A Silicon NPN Epitaxial Planar Transistor Application Driver for Solenoid and Motor, Series Regulator and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM20(TO220F) Symbol 2SC3852 2SC3852A Unit Symbol Conditions 2SC3852 2SC3852A Unit 0.2 4.2 0.2 10.1 c0.5 2.8 VCBO 80 100 10ma

 8.13. Size:24K  sanken-ele
 2sc3851.pdf 

2SC3851/3851A Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1488/A) Application Audio and PPC High Voltage Power Supply, and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM20(TO220F) Symbol 2SC3851A Unit Symbol Conditions 2SC3851 2SC3851A Unit 2SC3851 0.2 4.2 0.2 10.1 c0.5 2.8 VCBO 100 V 100max

 8.14. Size:24K  sanken-ele
 2sc3857.pdf 

2SC3857 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1493) Application Audio and General Purpose External Dimensions MT-200 Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol 2SC3857 Symbol Conditions 2SC3857 Unit Unit 0.2 6.0 0.3 36.4 VCBO 200 ICBO VCB=200V 100max A V 0.2 24.4 2.1 0.1 VCEO 200 IEBO VEB=6V 100m

 8.15. Size:24K  sanken-ele
 2sc3856.pdf 

2SC3856 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1492) Application Audio and General Purpose External Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol Symbol 2SC3856 Unit Conditions 2SC3856 Unit 0.2 4.8 0.4 15.6 ICBO 0.1 VCBO 200 V VCB=200V 100max A 9.6 2.0 IEBO VCEO 180 V VEB=6V 100max

 8.16. Size:24K  sanken-ele
 2sc3858.pdf 

2SC3858 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1494) Application Audio and General Purpose (Ta=25 C) Absolute maximum ratings (Ta=25 C) Electrical Characteristics External Dimensions MT-200 Symbol 2SC3858 Unit Symbol Conditions 2SC3858 Unit 0.2 6.0 0.3 36.4 VCBO ICBO VCB=200V 100max A 200 V 0.2 24.4 2.1 0.1 2- 3.2 9 VCEO IEBO VEB=

 8.17. Size:198K  foshan
 2sc3852 3da3852r.pdf 

2SC3852(3DA3852R) NPN /SILICON NPN TRANSISTOR Application Driver for solenoid and motor, series regulator and general purpose. , Features High h , low V FE CE(sat). /Absolute maximum ratings(Ta=25 ) Symbo

 8.18. Size:1824K  cn sps
 2sc3856t4tl.pdf 

2SC3856T4TL Silicon NPN Power Transistor DESCRIPTION High Collector-Emitter Breakdown Voltage- V =180V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1492 APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 200 V CBO V Collector-Emitter Voltage 180 V CEO V E

 8.19. Size:430K  cn sptech
 2sc3856o 2sc3856p 2sc3856y.pdf 

SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC3856 DESCRIPTION High Collector-Emitter Breakdown Voltage- V =180V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1492 APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 200 V CBO V Collector

 8.20. Size:212K  inchange semiconductor
 2sc3853.pdf 

isc Silicon NPN Power Transistor 2SC3853 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO DC Current Gain- h = 50(Min)@ I = 2A FE C Complement to Type 2SA1489 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY

 8.21. Size:152K  inchange semiconductor
 2sc3852-220fa.pdf 

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3852 DESCRIPTION With TO-220Fa package Low collector saturation voltage High hFE APPLICATIONS Driver for solenoid and motor,series regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute

 8.22. Size:212K  inchange semiconductor
 2sc3855.pdf 

isc Silicon NPN Power Transistor 2SC3855 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 140V(Min) (BR)CEO DC Current Gain- h = 50(Min)@ I = 3A FE C Complement to Type 2SA1491 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a S

 8.23. Size:206K  inchange semiconductor
 2sc3852.pdf 

isc Silicon NPN Power Transistor 2SC3852 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO DC Current Gain- h = 200(Min)@ I = 0.5A FE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Driver for solenoid and motor, series regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a

 8.24. Size:206K  inchange semiconductor
 2sc3851.pdf 

isc Silicon NPN Power Transistor 2SC3851 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO DC Current Gain- h = 40(Min)@ I = 1A FE C Complement to Type 2SA1488 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY

 8.25. Size:221K  inchange semiconductor
 2sc3857.pdf 

isc Silicon NPN Power Transistor 2SC3857 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 200V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1493 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Coll

 8.26. Size:144K  inchange semiconductor
 2sc3851 2sc3851a.pdf 

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3851 2SC3851A DESCRIPTION With TO-220F package Complement to type 2SA1488/1488A APPLICATIONS Audio and PPC high voltage power supply ,and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 )

 8.27. Size:217K  inchange semiconductor
 2sc3856.pdf 

isc Silicon NPN Power Transistor 2SC3856 DESCRIPTION High Collector-Emitter Breakdown Voltage- V =180V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1492 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE

 8.28. Size:183K  inchange semiconductor
 2sc3858.pdf 

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3858 DESCRIPTION With MT-200 package Complement to type 2SA1494 APPLICATIONS Audio and general purpose PINNING(see Fig.2) PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 Emitter Absolute maximum ratings (Ta=25 C) SYMBOL

 8.29. Size:212K  inchange semiconductor
 2sc3854.pdf 

isc Silicon NPN Power Transistor 2SC3854 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1490 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Coll

 8.30. Size:182K  inchange semiconductor
 2sc3851a.pdf 

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3851A DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO DC Current Gain- h = 40(Min)@ I = 1A FE C Complement to Type 2SA1488A 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose appli

 8.31. Size:206K  inchange semiconductor
 2sc3852a.pdf 

isc Silicon NPN Power Transistor 2SC3852A DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO DC Current Gain- h = 200(Min)@ I = 0.5A FE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Driver for solenoid and motor, series regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a