Product Specification www.jmnic.comSilicon NPN Power Transistors 2SC3858 DESCRIPTION With MT-200 package Complement to type 2SA1494 APPLICATIONS Audio and general purpose PINNING(see Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol3 EmitterAbsolute maximum ratings (Ta=25C) SYMBOL PARAMETER

2SC3858Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1494)Application : Audio and General Purpose(Ta=25C) Absolute maximum ratings (Ta=25C) Electrical Characteristics External Dimensions MT-200Symbol 2SC3858 Unit Symbol Conditions 2SC3858 Unit0.26.00.336.4VCBO ICBO VCB=200V 100max A200 V0.224.42.10.12-3.29VCEO IEBO VEB=

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3858 DESCRIPTION With MT-200 package Complement to type 2SA1494 APPLICATIONS Audio and general purpose PINNING(see Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol3 EmitterAbsolute maximum ratings (Ta=25C) SYMBOL

High hFELOW VCE (sat)2SC3852/3852ASilicon NPN Epitaxial Planar Transistor Application : Driver for Solenoid and Motor, Series Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F)Symbol 2SC3852 2SC3852AUnit Symbol Conditions 2SC3852 2SC3852A Unit0.24.20.210.1c0.52.8VCBO 80 100 10ma

2SC3855 NPN PLANAR SILICON TRANSISTORAUDIO POWER AMPLIFIERDC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SA1491ABSOLUTE MAXIMUM RATING (Ta=25CC)CCCharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 200 V Collector-Emitter Voltage VCEO 140 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC 10 A Collecto

2SC3854 NPN PLANAR SILICON TRANSISTORAUDIO POWER AMPLIFIERDC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SA1490ABSOLUTE MAXIMUM RATING (Ta=25CC)CCCharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 160 V Collector-Emitter Voltage VCEO 120 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC 8 A Collector

JMnic Product SpecificationSilicon NPN Power Transistors 2SC3853 DESCRIPTION With TO-3PN package Complement to type 2SA1489 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNIT

Product Specification www.jmnic.com Silicon Power Transistors 2SC3855 DESCRIPTION With TO-3PN package Complement to type 2SA1491 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterFig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE U

JMnic Product Specification Silicon NPN Power Transistors 2SC3850 DESCRIPTION With TO-3PN package Good linearity of hFE Low collector saturation voltage APPLICATIONS For power switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=)

JMnic Product Specification Silicon NPN Power Transistors 2SC3851 2SC3851A DESCRIPTION With TO-220F package Complement to type 2SA1488/1488A APPLICATIONS Audio and PPC high voltage power supply ,and general purpose PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMET

JMnic Product SpecificationSilicon NPN Power Transistors 2SC3857 DESCRIPTION With MT-200 package Complement to type 2SA1493 APPLICATIONS Audio and general purpose PINNING(see Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITION

JMnic Product Specification Silicon NPN Power Transistors 2SC3856 DESCRIPTION With TO-3PN package Complement to type 2SA1492 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol3 EmitterAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNIT

JMnic Product SpecificationSilicon NPN Power Transistors 2SC3854 DESCRIPTION With TO-3PN package Complement to type 2SA1490 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNIT

High hFELOW VCE (sat)2SC3852/3852ASilicon NPN Epitaxial Planar Transistor Application : Driver for Solenoid and Motor, Series Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F)Symbol 2SC3852 2SC3852AUnit Symbol Conditions 2SC3852 2SC3852A Unit0.24.20.210.1c0.52.8VCBO 80 100 10ma

2SC3851/3851ASilicon NPN Epitaxial Planar Transistor (Complement to type 2SA1488/A)Application : Audio and PPC High Voltage Power Supply, and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F)Symbol 2SC3851A Unit Symbol Conditions 2SC3851 2SC3851A Unit2SC38510.24.20.210.1c0.52.8VCBO 100 V 100max

2SC3857Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1493)Application : Audio and General PurposeExternal Dimensions MT-200 Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol 2SC3857 Symbol Conditions 2SC3857 UnitUnit0.26.00.336.4VCBO 200 ICBO VCB=200V 100max AV0.224.42.10.1VCEO 200 IEBO VEB=6V 100m

2SC3856Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1492)Application : Audio and General PurposeExternal Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)SymbolSymbol 2SC3856 Unit Conditions 2SC3856 Unit0.24.80.415.6ICBO 0.1VCBO 200 V VCB=200V 100max A 9.6 2.0IEBOVCEO 180 V VEB=6V 100max

2SC3852(3DA3852R) NPN /SILICON NPN TRANSISTOR Application: Driver for solenoid and motor, series regulator and general purpose. :, Features: High h , low V FE CE(sat)./Absolute maximum ratings(Ta=25) Symbo

2SC3856T4TLSilicon NPN Power TransistorDESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V =180V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1492APPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 200 VCBOV Collector-Emitter Voltage 180 VCEOV E

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC3856DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V =180V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1492APPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 200 VCBOV Collector

isc Silicon NPN Power Transistor 2SC3853DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEODC Current Gain-: h = 50(Min)@ I = 2AFE CComplement to Type 2SA1489Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSY

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3852 DESCRIPTION With TO-220Fa package Low collector saturation voltage High hFEAPPLICATIONS Driver for solenoid and motor,series regulator and general purpose applications PINNING PIN DESCRIPTION1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute

isc Silicon NPN Power Transistor 2SC3855DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 140V(Min)(BR)CEODC Current Gain-: h = 50(Min)@ I = 3AFE CComplement to Type 2SA1491Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aS

isc Silicon NPN Power Transistor 2SC3850DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)Good Linearity of hFEHigh Collector CurrentMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA

isc Silicon NPN Power Transistor 2SC3852DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEODC Current Gain-: h = 200(Min)@ I = 0.5AFE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDriver for solenoid and motor, series regulator andgeneral purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)a

isc Silicon NPN Power Transistor 2SC3851DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEODC Current Gain-: h = 40(Min)@ I = 1AFE CComplement to Type 2SA1488Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSY

isc Silicon NPN Power Transistor 2SC3857DESCRIPTIONCollector-Emitter Breakdown Voltage-V = 200V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1493Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Coll

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3851 2SC3851A DESCRIPTION With TO-220F package Complement to type 2SA1488/1488A APPLICATIONS Audio and PPC high voltage power supply ,and general purpose PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 EmitterAbsolute maximum ratings (Ta=25)

isc Silicon NPN Power Transistor 2SC3856DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V =180V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1492Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE

isc Silicon NPN Power Transistor 2SC3854DESCRIPTIONCollector-Emitter Breakdown Voltage-V = 120V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1490Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Coll

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3851ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEODC Current Gain-: h = 40(Min)@ I = 1AFE CComplement to Type 2SA1488A100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose appli

isc Silicon NPN Power Transistor 2SC3852ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEODC Current Gain-: h = 200(Min)@ I = 0.5AFE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDriver for solenoid and motor, series regulator andgeneral purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)a