Справочник транзисторов. 2SC3869

 

Биполярный транзистор 2SC3869 - описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2SC3869

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 35 W

Макcимально допустимое напряжение коллектор-база (Ucb): 500 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V

Макcимальный постоянный ток коллектора (Ic): 5 A

Предельная температура PN-перехода (Tj): 150 °C

Статический коэффициент передачи тока (hfe): 40

Корпус транзистора: TO218

Аналоги (замена) для 2SC3869

 

 

2SC3869 Datasheet (PDF)

1.1. 2sc3869.pdf Size:51K _panasonic

2SC3869
2SC3869

Power Transistors 2SC3869 Silicon NPN triple diffusion planar type For high-speed switching Unit: mm 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features High-speed switching ? 3.1 0.1 High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with 1.3 0.2 1.4

4.1. 2sc3866-220f.pdf Size:223K _update

2SC3869
2SC3869

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3866 DESCRIPTION ·With TO-220F package ·High speed switching ·High voltage ·High reliability APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (

4.2. 2sc3862.pdf Size:319K _toshiba

2SC3869
2SC3869

2SC3862 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3862 TV Tuner, UHF Mixer Applications Unit: mm VHF~UHF Band RF Amplifier Applications • Exchange of emitter for base in 2SC3120 Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 15 V Emitter-base voltage VEBO 3 V Collector

 4.3. 2sc3860.pdf Size:88K _sanyo

2SC3869
2SC3869

4.4. 2sc3868.pdf Size:59K _panasonic

2SC3869
2SC3869

Power Transistors 2SC3868 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features High-speed switching ? 3.1 0.1 High collector to base voltage VCBO Wide area of safe operation (ASO) Full-pack package which can be installed to the heat sink with one screw 1.3 0.2 1.4 0.1 +0.2 Absolute Maximu

 4.5. 2sc3866.pdf Size:160K _fuji

2SC3869
2SC3869

4.6. 2sc3865.pdf Size:158K _fuji

2SC3869
2SC3869

4.7. 2sc3867.pdf Size:27K _hitachi

2SC3869
2SC3869

2SC3867 Silicon NPN Epitaxial Application UHF frequency converter Wide band amplifier Outline MPAK 3 1 1. Base 2. Emitter 2 3. Collector 2SC3867 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 20 V Collector to emitter voltage VCEO 11 V Emitter to base voltage VEBO 3V Collector current IC 50 mA Collector power dissipation PC 150

4.8. 2sc3866.pdf Size:62K _jmnic

2SC3869
2SC3869

Product Specification www.jmnic.com Silicon NPN Power Transistor 2SC3866 DESCRIPTION ·High Breakdown Voltage- : V(BR)CBO= 900V(Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector

4.9. 2sc3868.pdf Size:152K _jmnic

2SC3869
2SC3869

JMnic Product Specification Silicon NPN Power Transistors 2SC3868 DESCRIPTION · ·With TO-220Fa package ·High breakdown voltage ·Wide area of safe operation APPLICATIONS ·For high speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitt

4.10. 2sc3866.pdf Size:139K _inchange_semiconductor

2SC3869
2SC3869

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3866 DESCRIPTION ·High Breakdown Voltage- : V(BR)CBO= 900V(Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNI

4.11. 2sc3868.pdf Size:122K _inchange_semiconductor

2SC3869
2SC3869

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3868 DESCRIPTION Ў¤ With TO-220Fa package Ў¤ High breakdown voltage Ў¤ Wide area of safe operation APPLICATIONS Ў¤ For high speed switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Ў¤ Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMET

4.12. 2sc3862.pdf Size:914K _kexin

2SC3869
2SC3869

SMD Type Transistors NPN Transistors 2SC3862 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Current Capability IC=50mA ● Collector Emitter Voltage VCEO=15V 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collecto

4.13. 2sc3863.pdf Size:736K _kexin

2SC3869
2SC3869

SMD Type Transistors NPN Transistors 2SC3863 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 ■ Features ● Collector Current Capability IC=100mA 1 2 ● Collector Emitter Voltage VCEO=50V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 ● Complementary to 2SA1502 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collecto

4.14. 2sc3867.pdf Size:808K _kexin

2SC3869
2SC3869

SMD Type Transistors NPN Transistors 2SC3867 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 ■ Features ● Collector Current Capability IC=50mA 1 2 ● Collector Emitter Voltage VCEO=11V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Colle

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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