Биполярный транзистор 2SC386A
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC386A
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.2
W
Макcимально допустимое напряжение коллектор-база (Ucb): 30
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 15
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 3
V
Макcимальный постоянный ток коллектора (Ic): 0.02
A
Предельная температура PN-перехода (Tj): 125
°C
Граничная частота коэффициента передачи тока (ft): 300
MHz
Ёмкость коллекторного перехода (Cc): 3
pf
Статический коэффициент передачи тока (hfe): 40
Корпус транзистора:
TO92
Аналоги (замена) для 2SC386A
2SC386A
Datasheet (PDF)
8.3. Size:319K toshiba
2sc3862.pdf 
2SC3862 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3862 TV Tuner, UHF Mixer Applications Unit: mm VHF~UHF Band RF Amplifier Applications Exchange of emitter for base in 2SC3120 Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 30 VCollector-emitter voltage VCEO 15 VEmitter-base voltage VEBO 3 VCollector
8.5. Size:51K panasonic
2sc3869.pdf 
Power Transistors2SC3869Silicon NPN triple diffusion planar typeFor high-speed switchingUnit: mm10.0 0.2 4.2 0.25.5 0.2 2.7 0.2FeaturesHigh-speed switching 3.1 0.1High collector to base voltage VCBOWide area of safe operation (ASO)Satisfactory linearity of foward current transfer ratio hFEFull-pack package which can be installed to the heat sink with1.3
8.6. Size:59K panasonic
2sc3868.pdf 
Power Transistors2SC3868Silicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm10.0 0.2 4.2 0.25.5 0.2 2.7 0.2FeaturesHigh-speed switching 3.1 0.1High collector to base voltage VCBOWide area of safe operation (ASO)Full-pack package which can be installed to the heat sink withone screw1.3 0.21.4 0.1+0.2Abso
8.9. Size:27K hitachi
2sc3867.pdf 
2SC3867Silicon NPN EpitaxialApplication UHF frequency converter Wide band amplifierOutlineMPAK311. Base2. Emitter23. Collector2SC3867Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 20 VCollector to emitter voltage VCEO 11 VEmitter to base voltage VEBO 3VCollector current IC 50 mACollector power dissipatio
8.10. Size:62K jmnic
2sc3866.pdf 
Product Specification www.jmnic.com Silicon NPN Power Transistor 2SC3866 DESCRIPTION High Breakdown Voltage- : V(BR)CBO= 900V(Min) High Switching Speed High Reliability APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Coll
8.11. Size:152K jmnic
2sc3868.pdf 
JMnic Product SpecificationSilicon NPN Power Transistors 2SC3868 DESCRIPTION With TO-220Fa package High breakdown voltage Wide area of safe operation APPLICATIONS For high speed switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open
8.12. Size:808K kexin
2sc3867.pdf 
SMD Type TransistorsNPN Transistors2SC3867SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=50mA1 2 Collector Emitter Voltage VCEO=11V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Colle
8.13. Size:914K kexin
2sc3862.pdf 
SMD Type TransistorsNPN Transistors2SC3862SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=50mA Collector Emitter Voltage VCEO=15V 1 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collecto
8.14. Size:736K kexin
2sc3863.pdf 
SMD Type TransistorsNPN Transistors2SC3863SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=100mA1 2 Collector Emitter Voltage VCEO=50V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1 Complementary to 2SA15021.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collecto
8.15. Size:172K cn sptech
2sc3866.pdf 
SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC3866DESCRIPTIONHigh Breakdown Voltage: V = 900V(Min)(BR)CBOHigh Switching SpeedHigh ReliabilityAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base V
8.16. Size:223K inchange semiconductor
2sc3866-220f.pdf 
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3866 DESCRIPTION With TO-220F package High speed switching High voltage High reliability APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers PINNING PIN DESCRIPTION1 Base 2 Collector Fig.1 simplified outline (
8.17. Size:225K inchange semiconductor
2sc3866a.pdf 
isc Silicon NPN Power Transistor 2SC3866ADESCRIPTIONHigh Breakdown Voltage: V = 1000V(Min)(BR)CBOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T =25
8.18. Size:193K inchange semiconductor
2sc3866.pdf 
isc Silicon NPN Power Transistor 2SC3866DESCRIPTIONHigh Breakdown Voltage: V = 900V(Min)(BR)CBOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T =25
8.19. Size:212K inchange semiconductor
2sc3868.pdf 
isc Silicon NPN Power Transistor 2SC3868DESCRIPTION Collector-Base Breakdown Voltage-: V = 500V(Min.)(BR)CBOLow Collector Saturation VoltageWide Area of Safe OperationHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RATINGS (T =25
8.20. Size:180K inchange semiconductor
2sc3862.pdf 
INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC3862DESCRIPTIONHigh Gain Bandwidth Productf = 2400 MHz TYP.T100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSTV tuner, UHF mixer applications.VHF~UHF band RF amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE
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