Биполярный транзистор 2SC3883 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC3883
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 50 W
Макcимально допустимое напряжение коллектор-база (Ucb): 1500 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 800 V
Макcимальный постоянный ток коллектора (Ic): 5 A
Предельная температура PN-перехода (Tj): 175 °C
Статический коэффициент передачи тока (hfe): 10
Корпус транзистора: TO218
2SC3883 Datasheet (PDF)
2sc3883.pdf
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isc Silicon NPN Power Transistor 2SC3883DESCRIPTIONHigh Breakdown Voltage-: V = 800V (Min)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for high resolution display.High speed switching regulator output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM
2sc388.pdf
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2SC388 0.05A , 30V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES TV Final picture if amplifier applications G HEmitterCollectorBase JA DMillimeter REF. Min. Max.BA 4.40 4.70B 4.30 4.70KC 12.70 -D 3.30 3.81E 0.36 0.56F 0.36 0.51
2sc388.pdf
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2SC388(NPN)TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE Features TV final pictureif amplifier applications MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Emitter Voltage 30 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 4 V IC Collector Current -Continuous 50 mA Dimensions in inches a
2sc3886.pdf
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isc Silicon NPN Power Transistor 2SC3886DESCRIPTIONHigh Breakdown Voltage-: V = 600V (Min)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for high resolution display.High speed switching regulator output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM
2sc3886a.pdf
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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3886A DESCRIPTION With TO-3P(H)IS package High voltage ,high speed APPLICATIONS Horizontal deflection output for high resolution display High speed switching regulator output applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3P(H)IS) and symbol 3
2sc3884.pdf
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isc Silicon NPN Power Transistor 2SC3884DESCRIPTIONHigh Breakdown Voltage-: V = 1400V (Min)CBOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for high resolution display.High speed switching regulator output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA
2sc3885.pdf
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isc Silicon NPN Power Transistor 2SC3885DESCRIPTIONHigh Breakdown Voltage: V = 1400V (Min)CBOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for high resolution display.High speed switching regulator output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .