2SC389 datasheet, аналоги, основные параметры
Наименование производителя: 2SC389 📄📄
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.15 W
Макcимально допустимое напряжение коллектор-база (Ucb): 20 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 15 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 3 V
Макcимальный постоянный ток коллектора (Ic): 0.02 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 250 MHz
Ёмкость коллекторного перехода (Cc): 1 pf
Статический коэффициент передачи тока (hFE): 50
Корпус транзистора: TO72
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Аналоги (замена) для 2SC389
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2SC389 даташит
0.1. Size:96K sanyo
2sc3896.pdf 
Ordering number EN4097 NPN Triple Diffused Planar Silicon Transistor 2SC3896 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit mm High reliability (Adoption of HVP process). 2039D High breakdown voltage (VCBO=1500V). [2SC3896] Adoption of MBIT process. 1 Base 2 Collector 3 E
0.2. Size:93K sanyo
2sc3897.pdf 
Ordering number EN4098 NPN Triple Diffused Planar Silicon Transistor 2SC3897 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit mm High reliability (Adoption of HVP process). 2039D High breakdown voltage (VCBO=1500V). [2SC3897] Adoption of MBIT process. 1 Base 2 Collector 3 E
0.4. Size:84K sanyo
2sc3894.pdf 
Ordering number EN2965B NPN Triple Diffused Planar Silicon Transistor 2SC3894 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit mm High breakdown voltage (VCBO=1500V). 2039D High reliability (Adoption of HVP process). [2SC3894] Adoption of MBIT process. 1 Base 2 Collector 3
0.5. Size:84K sanyo
2sc3895.pdf 
Ordering number EN2966B NPN Triple Diffused Planar Silicon Transistor 2SC3895 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit mm High breakdown voltage (VCBO=1500V). 2039D High reliability (Adoption of HVP process). [2SC3895] Adoption of MBIT process. 1 Base 2 Collector 3
0.6. Size:25K sanken-ele
2sc3890.pdf 
2SC3890 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application Switching Regulator and General Purpose External Dimensions FM20(TO220F) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol 2SC3890 Unit Symbol Conditions 2SC3890 Unit 0.2 4.2 0.2 10.1 c0.5 2.8 VCBO 500 V VCB=500V 100max A ICBO
0.9. Size:95K inchange semiconductor
2sc3892a.pdf 
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3892A DESCRIPTION With TO-3P(H)IS package Built-in damper diode High voltage ,high speed APPLICATIONS Horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3P(H)IS) and symbol 3 Emitter Absolute maximum ratings (Ta=25 )
0.10. Size:215K inchange semiconductor
2sc3894.pdf 
isc Silicon NPN Power Transistor 2SC3894 DESCRIPTION High Breakdown Voltage- V = 1500V(Min) (BR)CBO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Ultrahigh-definition CRT display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN
0.11. Size:206K inchange semiconductor
2sc3890.pdf 
isc Silicon NPN Power Transistor 2SC3890 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO Low Collector Saturation Voltage- V = 0.5V(Max)@ I = 3A CE(sat) C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUT
0.13. Size:214K inchange semiconductor
2sc3893a.pdf 
isc Silicon NPN Power Transistor 2SC3893A DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER
0.14. Size:214K inchange semiconductor
2sc3892.pdf 
isc Silicon NPN Power Transistor 2SC3892 DESCRIPTION High Breakdown Voltage- V = 1400V (Min) CBO High Switching Speed Low Saturation Voltage Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER
0.15. Size:214K inchange semiconductor
2sc3893.pdf 
isc Silicon NPN Power Transistor 2SC3893 DESCRIPTION High Breakdown Voltage- V = 1400V (Min) CBO High Switching Speed Low Saturation Voltage Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER
Другие транзисторы: 2SC3887, 2SC3887A, 2SC3888, 2SC3888A, 2SC3889, 2SC3889A, 2SC388A, 2SC388ATM, TIP31, 2SC3890, 2SC3890A, 2SC3891, 2SC3891A, 2SC3892, 2SC3892A, 2SC3893, 2SC3893A
