Справочник транзисторов. 2SC3892A

 

Биполярный транзистор 2SC3892A - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SC3892A
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 60 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 1500 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 600 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 7 A
   Предельная температура PN-перехода (Tj): 175 °C
   Граничная частота коэффициента передачи тока (ft): 8 MHz
   Ёмкость коллекторного перехода (Cc): 210 pf
   Статический коэффициент передачи тока (hfe): 8
   Корпус транзистора: ISOWATT218

 Аналоги (замена) для 2SC3892A

 

 

2SC3892A Datasheet (PDF)

 ..1. Size:95K  inchange semiconductor
2sc3892a.pdf

2SC3892A 2SC3892A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3892A DESCRIPTION With TO-3P(H)IS package Built-in damper diode High voltage ,high speed APPLICATIONS Horizontal deflection output applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3P(H)IS) and symbol 3 EmitterAbsolute maximum ratings (Ta=25)

 7.1. Size:214K  inchange semiconductor
2sc3892.pdf

2SC3892A 2SC3892A

isc Silicon NPN Power Transistor 2SC3892DESCRIPTIONHigh Breakdown Voltage-V = 1400V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

 8.1. Size:96K  sanyo
2sc3896.pdf

2SC3892A 2SC3892A

Ordering number:EN4097NPN Triple Diffused Planar Silicon Transistor2SC3896Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High reliability (Adoption of HVP process).2039D High breakdown voltage (VCBO=1500V).[2SC3896] Adoption of MBIT process.1 : Base2 : Collector3 : E

 8.2. Size:93K  sanyo
2sc3897.pdf

2SC3892A 2SC3892A

Ordering number:EN4098NPN Triple Diffused Planar Silicon Transistor2SC3897Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High reliability (Adoption of HVP process).2039D High breakdown voltage (VCBO=1500V).[2SC3897] Adoption of MBIT process.1 : Base2 : Collector3 : E

 8.3. Size:87K  sanyo
2sa1509 2sc3899.pdf

2SC3892A 2SC3892A

 8.4. Size:84K  sanyo
2sc3894.pdf

2SC3892A 2SC3892A

Ordering number:EN2965BNPN Triple Diffused Planar Silicon Transistor2SC3894Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High breakdown voltage (VCBO=1500V).2039D High reliability (Adoption of HVP process).[2SC3894] Adoption of MBIT process.1 : Base2 : Collector3 :

 8.5. Size:84K  sanyo
2sc3895.pdf

2SC3892A 2SC3892A

Ordering number:EN2966BNPN Triple Diffused Planar Silicon Transistor2SC3895Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High breakdown voltage (VCBO=1500V).2039D High reliability (Adoption of HVP process).[2SC3895] Adoption of MBIT process.1 : Base2 : Collector3 :

 8.6. Size:25K  sanken-ele
2sc3890.pdf

2SC3892A

2SC3890Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor)Application : Switching Regulator and General PurposeExternal Dimensions FM20(TO220F) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol 2SC3890 Unit Symbol Conditions 2SC3890 Unit0.24.20.210.1c0.52.8VCBO 500 V VCB=500V 100max AICBO

 8.7. Size:179K  inchange semiconductor
2sc3896.pdf

2SC3892A 2SC3892A

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3896DESCRIPTIONHigh Breakdown VoltageHigh Switching SpeedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSUltrahigh definition CRT display horizontal deflectionoutput applicationsABSOLUTE MAXIMUM RATINGS(T =25

 8.8. Size:179K  inchange semiconductor
2sc3897.pdf

2SC3892A 2SC3892A

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3897DESCRIPTIONHigh Breakdown VoltageHigh Switching SpeedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSUltrahigh definition CRT display horizontal deflectionoutput applicationsABSOLUTE MAXIMUM RATINGS(T =25

 8.9. Size:215K  inchange semiconductor
2sc3894.pdf

2SC3892A 2SC3892A

isc Silicon NPN Power Transistor 2SC3894DESCRIPTIONHigh Breakdown Voltage-: V = 1500V(Min)(BR)CBOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSUltrahigh-definition CRT display horizontal deflectionoutput applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

 8.10. Size:206K  inchange semiconductor
2sc3890.pdf

2SC3892A 2SC3892A

isc Silicon NPN Power Transistor 2SC3890DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOLow Collector Saturation Voltage-: V = 0.5V(Max)@ I = 3ACE(sat) CHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUT

 8.11. Size:178K  inchange semiconductor
2sc3895.pdf

2SC3892A 2SC3892A

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3895DESCRIPTIONHigh Breakdown VoltageHigh Switching SpeedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSUltrahigh definition CRT display horizontal deflectionoutput applicationsABSOLUTE MAXIMUM RATINGS(T =25

 8.12. Size:214K  inchange semiconductor
2sc3893a.pdf

2SC3892A 2SC3892A

isc Silicon NPN Power Transistor 2SC3893ADESCRIPTIONHigh Breakdown Voltage-V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

 8.13. Size:214K  inchange semiconductor
2sc3893.pdf

2SC3892A 2SC3892A

isc Silicon NPN Power Transistor 2SC3893DESCRIPTIONHigh Breakdown Voltage-V = 1400V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

Другие транзисторы... 2SC388A , 2SC388ATM , 2SC389 , 2SC3890 , 2SC3890A , 2SC3891 , 2SC3891A , 2SC3892 , 2SC2625 , 2SC3893 , 2SC3893A , 2SC3894 , 2SC3894A , 2SC3895 , 2SC3895A , 2SC3896 , 2SC3896A .

 

 
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