2SC39 - описание и поиск аналогов

Ordering number EN2509C NPN Triple Diffused Planar Silicon Transistor 2SC3996 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit mm High reliability (adoption of HVP process). 2048B High breakdown voltage (VCBO=1500V). [2SC3996] Adoption of MBIT process. 1 Base 2 Collector 3

Ordering number ENN2439B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1540/2SC3955 High-Definition CRT Display Video Output Applications Applications Package Dimensions High-definition CRT display video output, wide-band unit mm amplifier. 2042B [2SA1540/2SC3955] Features 8.0 4.0 3.3 1.0 1.0 High gain-bandwidth product fT=300MHz. High breakdown voltage VCEO=20

Ordering number EN2234C NPN Triple Diffused Planar Silicon Transistor 2SC3990 500V/35A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high reliability. unit mm Fast switching speed. 2048B Wide ASO. [2SC3990] Adoption of MBIT process. 1 Base 2 Collector 3 Emitter SANYO TO-3PBL Specifications Absolute Maximum Ratings a

Ordering number ENN2150B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1526/2SC3920 Switching Applications (with Bias Resistance) Applications Package Dimensions Switching circuits, inverter circuits, interface circuits, unit mm driver circuits. 2003B [2SA1526/2SC3920] 5.0 Features 4.0 4.0 On-chip bias resistance R1=10k , R2=10k . Large current capacity IC

Ordering number EN2836 NPN Triple Diffused Planar Silicon Transistor 2SC3991 500V/50A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high reliability. unit mm Fast switching speed (tf=0.1 s typ). 2048B Wide ASO. [2SC3991] Adoption of MBIT process. 1 Base 2 Collector 3 Emitter SANYO TO-3PBL Specifications Absolute M

Ordering number EN2101D 2SA1507 / 2SC3902 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1507 / 2SC3902 160V / 1.5A Switching Applications Applications Color TV audio output, converters, inverters. Features High breakdown voltage. Large current capacity. Adoption of FBET and MBIT process. The plastic-covered heat sink elimina

Ordering number ENN2151C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1527/2SC3921 Switching Applications (with Bias Resistance) Applications Package Dimensions Switching circuits, inverter circuits, interface circuits, unit mm driver circuits. 2003B [2SA1527/2SC3921] 5.0 Features 4.0 4.0 On-chip bias resistance R1=4.7k , R2=4.7k . Large current capacity

Ordering number ENN2101C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1507/2SC3902 160V/1.5A Switching Applications Applications Package Dimensions Color TV audio output, converters, inverters. unit mm 2042B Features [2SA1507/2SC3902] 8.0 High breakdown voltage. 4.0 3.3 1.0 1.0 Large current capacity. Adoption of FBET and MBIT process. 3.0 The plastic-cove

Ordering number ENN2162B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1522/2SC3916 Switching Applications (with Bias Resistance) Applications Package Dimensions Switching circuits, inverter circuits, interface circuits, unit mm driver circuits. 2033A [2SA1522/2SC3916] 2.2 4.0 Features On-chip bias resistance R1=10k , R2=10k . Small-sized package SPA. 0.4

Ordering number EN2236D NPN Triple Diffused Planar Silicon Transistor 2SC3993 800V/16A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high reliability. unit mm Fast switching speed. 2048B Wide ASO. [2SC3993] Adoption of MBIT process. 1 Base 2 Collector 3 Emitter SANYO TO-3PBL Specifications Absolute Maximum Ratings a

Ordering number ENN2152B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1528/2SC3922 Switching Applications (with Bias Resistance) Applications Package Dimensions Switching circuits, inverter circuits, interface circuits, unit mm dirver circuits. 2003B [2SA1528/2SC3922] 5.0 Features 4.0 4.0 On-chip bias resistance R1=2.2K , R2=10k . Large current capacity I

Ordering number ENN2163B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1523/2SC3917 Switching Applications (with Bias Resistance) Applications Package Dimensions Switching circuits, inverter circuits, interface circuits, unit mm driver circuits. 2033A [2SA1523/2SC3917] 2.2 Features 4.0 On-chip bias resistance R1=4.7k , R2=4.7k . Small-sized package SPA. 0.4

Ordering number ENN2159B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1518/2SC3912 Switching Applications (With Bias Resistance) Application Package Dimensions Switching circuits, inverters circuits, inferface unit mm circuits, driver circuits. 2018B [2SA1518/2SC3912] Features 0.4 On-chip bias resistance R1=10k , R2=10k . 0.16 3 Small-sized package CP. 0

Ordering number EN2441A PNP/NPN Epitaxial Planar Silicon Transistor 2SC3950 High-Definition CRT Display Video Output Applications Applications Package Dimensions High-definition CRT display video output, wide-band unit mm amplifier. 2042A [2SC3950] Features High fT fT=2.0GHz. Large current capacity IC=500mA. Micaless type TO-126 plastic package. B Base C

Ordering number ENN2160B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1519/2SC3913 Switching Applications (with Bias Resistance) Applications Package Dimensions Switching circuits, inverter circuits, interface circuits, unit mm driver circuits. 2018B [2SA1519/2SC3913] Features 0.4 On-chip bias resistance R1=4.7k , R2=4.7k . 0.16 3 Small-sized package CP.

Ordering number EN2732 NPN Triple Diffused Planar Silicon Transistor 2SC3998 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit mm High breakdown voltage (VCBO=1500V). 2048B High reliability (adoption of HVP process). [2SC3998] Adoption of MBIT process. 20.0 3.3 5.0 2.0 3.4 0.6

Ordering number ENN2166A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1521/2SC3915 Switching Applications (with Bias Resistance) Applications Package Dimensions Swicthing circuits, inverter circuits, interface circuits, unit mm dirver circuits. 2018B [2SA1521/2SC3915] Features 0.4 On-chip bias resistance R1=2.2k , R2=2.2k . 0.16 3 Small-sized package CP.

Ordering number EN2556 NPN Triple Diffused Planar Silicon Transistor 2SC3989 500V/25A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high reliability. unit mm Fast switching speed (tf=0.1 s typ). 2048B Adoption of MBIT process. [2SC3989] 1 Base 2 Collector 3 Emitter SANYO TO-3PBL Specifications Absolute Maximum Ratings

Ordering number EN2828 NPN Triple Diffused Planar Silicon Transistor 2SC3994 800V/25A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high reliability. unit mm Fast switching speed (tf=0.1 s typ). 2048B Wide ASO. [2SC3994] Adoption of MBIT process. 1 Base 2 Collector 3 Emitter SANYO TO-3PBL Specifications Absolute M

Ordering number ENN2153B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1529/2SC3923 Switching Applications (with Bias Resistance) Applications Package Dimensions Switching circuits, inverter circuits, interface circuits, unit mm driver circuits. 2003B [2SA1529/2SC3923] 5.0 Features 4.0 4.0 On-chip bias resistance R1=2.2k , R2=2.2k . Large current capacity

Ordering number ENN2149B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1525/2SC3919 Switching Applications (with Bias Resistance) Applications Package Dimensions Switching circuits, inverter circuits, interface circuits, unit mm driver circuits. 2033A [2SA1525/2SC3919] 2.2 4.0 Features On-chip bias resistance R1=2.2k , R2=2.2k . Small-sized package SPA. 0.

Ordering number EN2235D NPN Triple Diffused Planar Silicon Transistor 2SC3992 800V/12A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high reliability. unit mm Fast switching speed. 2048B Wide ASO. [2SC3992] Adoption of MBIT process. 1 Base 2 Collector 3 Emitter SANYO TO-3PBL Specifications Absolute Maximum Ratings a

Ordering number ENN2161B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1520/2SC3914 Switching Applications (with Bias Resistance) Applications Package Dimensions Switching circuits, inverter circuits, interface circuits, unit mm driver circuits. 2018B [2SA1520/2SC3914] Features 0.4 On-chip bias resistance R1=2.2k , R2=10k . 0.16 3 Small-sized package CP. 0

Ordering number ENN2438B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1539/2SC3954 High-Definition CRT Display Video Output Applications Package Dimensions Applications High-definition CRT display video output, wide-band unit mm amplifier. 2042B [2SA1539/SC3954] 8.0 Features 4.0 3.3 1.0 1.0 High fT fT=500MHz. High breakdown voltage VCEO=120Vmin. 3.0 Sm

Ordering number ENN2436C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1537/2SC3952 High-Definition CRT Display Video Output Applications Applications Package Dimensions High-definition CRT display video output, wide-band unit mm amplifier. 2042B [2SA1537/2SC3952] 8.0 Features 4.0 3.3 1.0 1.0 High fT fT=700MHz. High breakdown voltage VCEO=70Vmin. 3.0 Sma

Ordering number EN2508B NPN Triple Diffused Planar Silicon Transistor 2SC3995 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit mm High reliability (adoption of HVP process). 2048B High breakdown voltage (VCBO=1500V). [2SC3995] Adoption of MBIT process. 1 Base 2 Collector 3

Ordering number EN2232B NPN Triple Diffused Planar Silicon Transistor 2SC3988 500V/25A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high reliability. unit mm Fast switching speed. 2022A Wide ASO. [2SC3988] Adoption of MBIT process. 1 Base 2 Collector 3 Emitter SANYO TO-3PB Specifications Absolute Maximum Ratings at

Ordering number EN2220B NPN Planar Silicon Darlington Transistor 2SC3986 Driver Applications Applications Package Dimensions Suitable for use in switching of L load (motor unit mm drivers, printer hammer drivers, relay drivers). 2041A [2SC3986] Features High DC current gain. Large current capacity and wide ASO. On-chip Zener diode of 60 10V between collector and

Ordering number ENN2437B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1538/2SC3953 High-Definition CRT Display Video Output Applications Package Dimensions Applications High-definition CRT display video output, wide-band unit mm amplifier. 2042B [2SA1538/2SC3953] 8.0 Features 4.0 3.3 1.0 1.0 High fT fT=400MHz. High breakdown voltage VCEO=120Vmin. 3.0 S

Ordering number ENN2440B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1541/2SC3956 High-Definition CRT Display Video Output Applications Applications Package Dimensions High-definition CRT display video output, wide-band unit mm amplifier. 2042B [2SA1541/2SC3956] 8.0 Features 4.0 3.3 1.0 1.0 High gain-bandwidth product fT=300MHz. High breakdown voltage VCEO=2

Ordering number ENN2435B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1536/2SC3951 High-Definition CRT Display Video Output Applications Applications Package Dimensions High definition CRT display video output, wide-band unit mm amplifier. 2042B [2SA1536/2SC3951] 8.0 Features 4.0 3.3 1.0 1.0 High fT fT=600MHz. High breakdown voltage VCEO=70Vmin. 3.0 Sma

Ordering number EN2221B NPN Planar Silicon Darlington Transistor 2SC3987 Driver Applications Applications Package Dimensions Suitable for use in switching of L load (motor unit mm drivers, printer hammer drivers, relay drivers). 2041A [2SC3987] Features High DC current gain. Large current capacity and wide ASO. On-chip Zener diode of 60 10V between collector and

Ordering number ENN2164B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1524/2SC3918 Switching Applications (with Bias Resistance) Applications Package Dimensions Switching circuits, inverter circuits, interface circuits, unit mm driver circuits. 2033A [2SA1524/2SC3918] 2.2 4.0 Features On-chip bias resistance R1=2.2k , R2=10k . Small-sized package SPA. 0.4

2SC4102 / 2SC3906K Datasheet High-voltage Amplifier Transistor (120V, 50mA) lOutline l Parameter Value SOT-323 SOT-346 VCEO 120V IC 50mA 2SC4102 2SC3906K (UMT3) (SMT3) lFeatures lInner circuit l l 1)High breakdown voltage. (BVCEO=120V) 2)Complements the 2SA1579/2SA1514K.

2SC3906K FRA Datasheet High-voltage Amplifier Transistor (120V, 50mA) AEC-Q101 Qualified lOutline l SOT-346 Parameter Value SC-59 VCEO 120V IC 50mA SMT3 lFeatures lInner circuit l l 1)High breakdown voltage. (BVCEO=120V) 2)Complements the 2SA1514K FRA. lApplication l HIGH VOLTAGE AMPLIFIER lPackaging specifications l Basic Pac

Transistors High Voltage Switching Transistor (400V, 2A) 2SC3969 / 2SC5161 FFeatures FExternal dimensions (Units mm) 1) Low VCE(sat). VCE(sat) = 0.15V (Typ.) (IC / IB = 1A / 0.2A) 2) High breakdown voltage. VCEO = 400V 3) Fast switching. tr = 1.0 s (IC = 0.8A) FStructure Three-layer, diffused planar type NPN silicon transistor (96-698-C14) 236 Transistors 2SC3969 / 2SC5161

2SC4102 / 2SC3906K / 2SC2389S Transistors High-voltage Amplifier Transistor (120V, 50mA) 2SC4102 / 2SC3906K / 2SC2389S External dimensions (Unit mm) Features 1) High breakdown voltage. (BVCEO = 120V) 2SC4102 2) Complements the 2SA1579 / 2SA1514K / 2SA1038S. 1.25 Absolute maximum ratings (Ta=25 C) 2.1 Parameter Symbol Limits Unit Collector-base voltage VCBO 120 V C

2SC4102 / 2SC3906K / 2SC2389S Transistors High-voltage Amplifier Transistor (120V, 50mA) 2SC4102 / 2SC3906K / 2SC2389S External dimensions (Units mm) Features 1) High breakdown voltage. (BVCEO = 120V) 2SC4102 2) Complements the 2SA1579 / 2SA1514K / 2SA1038S. 1.25 2.1 Absolute maximum ratings (Ta=25 C) Parameter Symbol Limits Unit Collector-base voltage VCBO 120 V Collector-

Transistor 2SC3931 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm 2.1 0.1 0.425 1.25 0.1 0.425 Features Optimum for RF amplification of FM/AM radios. 1 High transition frequency fT. S-Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine 2 packing. Absolute Maximum Ratings (Ta

Power Transistors 2SC3973, 2SC3973A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 10.0 0.2 4.2 0.2 Features 5.5 0.2 2.7 0.2 High-speed switching High collector to base voltage VCBO 3.1 0.1 Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be insta

Power Transistors 2SC3971, 2SC3971A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 10.0 0.2 4.2 0.2 Features 5.5 0.2 2.7 0.2 High-speed switching High collector to base voltage VCBO 3.1 0.1 Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be insta

Transistor 2SC3940, 2SC3940A Silicon NPN epitaxial planer type For low-frequency output amplification and driver amplification Unit mm Complementary to 2SA1534 and 2SA1534A 5.0 0.2 4.0 0.2 Features Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. 0.7 0.1 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector

Power Transistors 2SC3981, 2SC3981A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm Features 15.0 0.3 5.0 0.2 High-speed switching 11.0 0.2 3.2 High collector to base voltage VCBO Wide area of safe operation (ASO) 3.2 0.1 Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed

Transistor 2SC3935 Silicon NPN epitaxial planer type For high-frequency amplification/oscillation/mixing Unit mm 2.1 0.1 0.425 1.25 0.1 0.425 Features High transition frequency fT. 1 Small collector output capacitance Cob and common base reverse transfer capacitance Crb. 3 S-Mini type package, allowing downsizing of the equipment and 2 automatic insertion through the tape p

Power Transistors 2SC3972, 2SC3972A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 10.0 0.2 4.2 0.2 Features 5.5 0.2 2.7 0.2 High-speed switching High collector to base voltage VCBO 3.1 0.1 Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be insta

Transistors 2SC3932 Silicon NPN epitaxial planer type Unit mm For high-frequency amplification / oscillation / mixing 0.3+0.1 0.15+0.10 0.05 0.0 3 Features High transition frequency fT 1 2 S-mini type package, allowing downsizing of the equipment and (0.65) (0.65) automatic insertion through the tape packing and the magazine 1.3 0.1 2.0 0.2 packing. 10 Abs

Transistor 2SC3940, 2SC3940A Silicon NPN epitaxial planer type For low-frequency output amplification and driver amplification Unit mm Complementary to 2SA1534 and 2SA1534A 5.0 0.2 4.0 0.2 Features Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. 0.7 0.1 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector

Transistor 2SC3936 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm 2.1 0.1 0.425 1.25 0.1 0.425 Features Optimum for RF amplification, oscillation, mixing, and IF of FM/ AM radios. 1 S-Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine 2 packing. Absolute Maximum Ratings (Ta=2

Transistor 2SC3904 Silicon NPN epitaxial planer type For 2GHz band low-noise amplification Unit mm +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features High transition frequency fT. Mini type package, allowing downsizing of the equipment and 1 automatic insertion through the tape packing and the magazine 3 packing. 2 Absolute Maximum Ratings (Ta=25 C) 0.1 to 0.

Power Transistors 2SC3982, 2SC3982A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 3.3 0.2 20.0 0.5 5.0 0.3 3.0 Features High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) 1.5 Satisfactory linearity of foward current transfer ratio hFE 1.5 2.0 0.3 Absolute Maximum Ratings (TC=2

Transistor 2SC3904 Silicon NPN epitaxial planer type For 2GHz band low-noise amplification Unit mm +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features High transition frequency fT. Mini type package, allowing downsizing of the equipment and 1 automatic insertion through the tape packing and the magazine 3 packing. 2 Absolute Maximum Ratings (Ta=25 C) 0.1 to 0.

Power Transistors 2SC3979, 2SC3979A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 10.0 0.2 4.2 0.2 Features 5.5 0.2 2.7 0.2 High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) 3.1 0.1 Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be insta

Transistor 2SC3935 Silicon NPN epitaxial planer type For high-frequency amplification/oscillation/mixing Unit mm 2.1 0.1 0.425 1.25 0.1 0.425 Features High transition frequency fT. 1 Small collector output capacitance Cob and common base reverse transfer capacitance Crb. 3 S-Mini type package, allowing downsizing of the equipment and 2 automatic insertion through the tape p

Power Transistors 2SC3978, 2SC3978A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 10.0 0.2 4.2 0.2 Features 5.5 0.2 2.7 0.2 High-speed switching High collector to base voltage VCBO 3.1 0.1 Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be insta

Power Transistors 2SC3976 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 3.3 0.2 20.0 0.5 5.0 0.3 3.0 Features High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) 1.5 Satisfactory linearity of foward current transfer ratio hFE 1.5 2.0 0.3 Absolute Maximum Ratings (TC=25 C) 2.7

Transistor 2SC3939 Silicon NPN epitaxial planer type For low-frequency driver amplification Unit mm Complementary to 2SA1533 5.0 0.2 4.0 0.2 Features High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier. Allowing supply with the radial taping. 0.7 0.1 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratin

Power Transistors 2SC3980, 2SC3980A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm Features 15.0 0.3 5.0 0.2 High-speed switching 11.0 0.2 3.2 High collector to base voltage VCBO Wide area of safe operation (ASO) 3.2 0.1 Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed

Transistor 2SC3937 Silicon NPN epitaxial planer type For UHF band low-noise amplification Unit mm 2.1 0.1 0.425 1.25 0.1 0.425 Features Low noise figure NF. 1 High gain. High transition frequency fT. 3 S-Mini type package, allowing downsizing of the equipment and 2 automatic insertion through the tape packing and the magazine packing. Absolute Maximum Ratings (Ta=25 C)

Transistor 2SC3936 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm 2.1 0.1 0.425 1.25 0.1 0.425 Features Optimum for RF amplification, oscillation, mixing, and IF of FM/ AM radios. 1 S-Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine 2 packing. Absolute Maximum Ratings (Ta=2

Transistor 2SC3934 Silicon NPN epitaxial planer type For high-frequency wide-band low-noise amplification Unit mm 2.1 0.1 0.425 1.25 0.1 0.425 Features High transition frequency fT. 1 S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 3 packing. 2 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol R

Power Transistors 2SC3946 Silicon NPN triple diffusion planar type For color TV horizontal deflection driver Unit mm 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features High collector to emitter VCEO 3.1 0.1 Large collector power dissipation PC Full-pack package which can be installed to the heat sink with one screw 1.3 0.2 1.4 0.1 +0.2 Absolute Maximum Ratings (TC=25 C

Transistor 2SC3937 Silicon NPN epitaxial planer type For UHF band low-noise amplification Unit mm 2.1 0.1 0.425 1.25 0.1 0.425 Features Low noise figure NF. 1 High gain. High transition frequency fT. 3 S-Mini type package, allowing downsizing of the equipment and 2 automatic insertion through the tape packing and the magazine packing. Absolute Maximum Ratings (Ta=25 C)

Power Transistors 2SC3943 Silicon NPN epitaxial planar type For video amplifier Unit mm 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features Small transition frequency fT 3.1 0.1 Small collector output capacitance Cob Full-pack package which can be installed to the heat sink with one screw 1.3 0.2 1.4 0.1 +0.2 Absolute Maximum Ratings (TC=25 C) 0.5 0.1 0.8 0.1 Pa

Transistor 2SC3938 Silicon NPN epitaxial planer type For high speed switching Unit mm 2.1 0.1 0.425 1.25 0.1 0.425 Features High-speed switching. 1 Low collector to emitter saturation voltage VCE(sat). S-Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine 2 packing. Allowing pair use with 2SA1739. Abso

Transistor 2SC3934 Silicon NPN epitaxial planer type For high-frequency wide-band low-noise amplification Unit mm 2.1 0.1 0.425 1.25 0.1 0.425 Features High transition frequency fT. 1 S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 3 packing. 2 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol R

Transistor 2SC3965 Silicon NPN triple diffusion planer type For small TV video output Unit mm 5.0 0.2 4.0 0.2 Features High collector to emitter voltage VCEO. Small collector output capacitance Cob. Allowing supply with the radial taping. 0.7 0.1 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.15 +0.15 Collector to base voltage VCBO 300 V 0.45 0.1 0

Transistor 2SC3929, 2SC3929A Silicon NPN epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SA1531 and 2SA1531A Features 2.1 0.1 Low noise voltage NV. 0.425 1.25 0.1 0.425 High foward current transfer ratio hFE. S-Mini type package, allowing downsizing of the equipment and 1 automatic insertion through the tape packing and the magazine p

Power Transistors 2SC3970, 2SC3970A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 10.0 0.2 4.2 0.2 Features 5.5 0.2 2.7 0.2 High-speed switching High collector to base voltage VCBO 3.1 0.1 Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be insta

Transistor 2SC3930 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm Complementary to 2SA1532 2.1 0.1 0.425 1.25 0.1 0.425 Features Optimum for RF amplification of FM/AM radios. 1 High transition frequency fT. S-Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine 2 packing. Ab

Power Transistors 2SC3977, 2SC3977A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 10.0 0.2 4.2 0.2 Features 5.5 0.2 2.7 0.2 High-speed switching High collector to base voltage VCBO 3.1 0.1 Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be insta

Transistor 2SC3933 Silicon NPN planer type For UHF amplification/mixing Unit mm 2.1 0.1 0.425 1.25 0.1 0.425 Features High power gain PG. 1 High transition frequency fT. S-Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine 2 packing. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit

Transistor 2SC3930 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm Complementary to 2SA1532 2.1 0.1 0.425 1.25 0.1 0.425 Features Optimum for RF amplification of FM/AM radios. 1 High transition frequency fT. S-Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine 2 packing. Ab

Transistor 2SC3929, 2SC3929A Silicon NPN epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SA1531 and 2SA1531A Features 2.1 0.1 Low noise voltage NV. 0.425 1.25 0.1 0.425 High foward current transfer ratio hFE. S-Mini type package, allowing downsizing of the equipment and 1 automatic insertion through the tape packing and the magazine p

Power Transistors 2SC3942 Silicon NPN triple diffusion planar type For color TV chroma output Unit mm 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features High collector to emitter VCEO 3.1 0.1 Small collector output capacitance Cob Full-pack package which can be installed to the heat sink with one screw 1.3 0.2 1.4 0.1 +0.2 Absolute Maximum Ratings (TC=25 C) 0.5 0.1

Transistor 2SC3932 Silicon NPN epitaxial planer type For high-frequency amplification/oscillation/mixing Unit mm 2.1 0.1 0.425 1.25 0.1 0.425 Features High transition frequency fT. 1 S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 3 packing. 2 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ra

Transistor 2SC3931 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm 2.1 0.1 0.425 1.25 0.1 0.425 Features Optimum for RF amplification of FM/AM radios. 1 High transition frequency fT. S-Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine 2 packing. Absolute Maximum Ratings (Ta

Transistor 2SC3941 Silicon NPN triple diffusion planer type For high breakdown voltage general amplification Unit mm For small TV video output 5.0 0.2 4.0 0.2 Complementary to 2SB1221 Features High collector to emitter voltage VCEO. High transition frequency fT. Allowing supply with the radial taping. 0.7 0.1 Absolute Maximum Ratings (Ta=25 C) +0.15 +0.15 Parameter Symbol

Power Transistors 2SC3944, 2SC3944A Silicon NPN epitaxial planar type For low-frequency driver and high power amplification Complementary to 2SA1535 and 2SA1535A Unit mm Features 10.0 0.2 4.2 0.2 Satisfactory foward current transfer ratio hFE vs. collector cur- 5.5 0.2 2.7 0.2 rent IC characteristics High transition frequency fT Makes up a complementary pair with 2SA1535 an

Transistor 2SC3939 Silicon NPN epitaxial planer type For low-frequency driver amplification Unit mm Complementary to 2SA1533 5.0 0.2 4.0 0.2 Features High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier. Allowing supply with the radial taping. 0.7 0.1 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratin

Power Transistors 2SC3975 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 15.0 0.3 5.0 0.2 Features 11.0 0.2 3.2 High-speed switching High collector to base voltage VCBO 3.2 0.1 Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the hea

Transistor 2SC3938 Silicon NPN epitaxial planer type For high speed switching Unit mm 2.1 0.1 0.425 1.25 0.1 0.425 Features High-speed switching. 1 Low collector to emitter saturation voltage VCE(sat). S-Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine 2 packing. Allowing pair use with 2SA1739. Abso

Power Transistors 2SC3974 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 15.0 0.3 5.0 0.2 Features 11.0 0.2 3.2 High-speed switching High collector to base voltage VCBO 3.2 0.1 Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the hea

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2SC3957 Silicon NPN Epitaxial, Darlington Application High gain amplifier Outline MPAK-4 2 1 3 3 1 1. Collector 2. Emitter 4 3. Base 4. NC 2 2SC3957 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 40 V Collector to emitter voltage VCEO 30 V Emitter to base voltage VEBO 10 V Collector current IC 300 mA Collector peak current

2SC3930 0.03A , 30V NPN Silicon Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURE SOT-323 For high-frequency Amplification Complementary A L to 2SA1532 3 3 Optimum for RF amplification of FM/AM radios Top View C B High transition frequency fT 1 1 2 2 K E D CLASSIFI

2SC3907 NPN PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SA1516 ABSOLUTE MAXIMUM RATING (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 180 V Collector-Emitter Voltage VCEO 180 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC 12 A

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with

JMnic Product Specification Silicon NPN Power Transistors 2SC3973 2SC3973A DESCRIPTION With TO-220Fa package High breakdown voltage High speed switching Wide area of safe operation APPLICATIONS For high breakdown voltate ,high-speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Ab

JMnic Product Specification Silicon NPN Power Transistors 2SC3972 2SC3972A DESCRIPTION With TO-220Fa package High speed switching High VCBO Wide area of safe operation APPLICATIONS For high breakdown voltate ,high-speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute maximu

Product Specification www.jmnic.com Silicon Power Transistors 2SC3979 DESCRIPTION With TO-220Fa package High breakdown voltage High speed switching Wide area of safe operation (SOA) Full-pack package which can be installed to the heak sink with one screw PINNING PIN DESCRIPTION 1 Base 2 Collector 3 emitter Fig.1 simplified outline (TO-220Fa) and symbol ABS

JMnic Product Specification Silicon NPN Power Transistors 2SC3970 2SC3970A DESCRIPTION With TO-220Fa package High speed switching High VCBO Wide area of safe operation APPLICATIONS For high breakdown voltate ,high-speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute maxim

JMnic Product Specification Silicon NPN Power Transistors 2SC3949 DESCRIPTION With TO-3PML package High voltage ,high speed APPLICATIONS For TV horizontal output and power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS MAX UN

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC3988 DESCRIPTION With TO-220Fa package High breakdown voltage high reliability. Wide ASO (Safe Operating Area) Fast switching speed APPLICATIONS 500V/25A Switching Regulator Applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified ou

JMnic Product Specification Silicon NPN Power Transistors 2SC3947 DESCRIPTION With TO-3PML package High voltage ,high speed APPLICATIONS For TV horizontal output and power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS MAX UNI

JMnic Product Specification Silicon NPN Power Transistors 2SC3962 DESCRIPTION With TO-220C package High voltage High speed switching APPLICATIONS For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNI

2SC3927 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application Switching Regulator and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions MT-100(TO3P) Symbol 2SC3927 Unit Symbol Conditions 2SC3927 Unit 0.2 4.8 0.4 15.6 VCBO 900 V A 0.1 ICBO VCB=800V 100max 9.6 2.0 VCEO 550

2SC3930 TRANSISTOR (NPN) SOT-323 FEATURES For high-frequency Amplification Complementary to 2SA1532 Optimum for RF amplification of FM/AM radios High transition frequency fT 1.BASE 2.EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.COLLECTOR Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Bas

2SC3928A SOT-23-3L Transistor(NPN) SOT-23-3L 1. BASE 2.92 2. EMITTER 0.35 1.17 3. COLLECTOR Features 2.80 1.60 Excellent hFE Linearity of DC forward current gain small collector to emitter saturation voltage 0.15 supper mini package easy mounting 1.90 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value U

SMD Type Transistors NPN Transistors 2SC3915 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=500mA 1 2 Collector Emitter Voltage VCEO=50V +0.1 +0.05 0.95-0.1 0.1-0.01 Complementary to 2SA1521 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector -

SMD Type Transistors NPN Transistors 2SC3928A SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=200mA Collector Emitter Voltage VCEO=50V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Coll

SMD Type Transistors NPN Transistors 2SC3904 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=65mA 1 2 Collector Emitter Voltage VCEO=10V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collec

SMD Type Transistors NPN Transistors 2SC3929A Features Low noise voltage NV. High foward current transfer ratio hFE. Complementary to 2SA1531A 1 Base 2 Emitter 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 55 Collector - Emitter Voltage VCEO 55 V Emitter - Base Voltage VEBO 5 Collector Current

SMD Type Transistors NPN Transistors 2SC3914 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=500mA 1 2 Collector Emitter Voltage VCEO=50V +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 Complementary to 2SA1520 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector

SMD Type Transistors NPN Transistors 2SC3930 Features Optimum for RF amplification of FM/AM radios. High transition frequency fT. Complementary to 2SA1532 1 Base 2 Emitter 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 20 V Emitter - Base Voltage VEBO 5 Colle

SMD Type Transistors NPN Transistors 2SC3912 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=500mA 1 2 Collector Emitter Voltage VCEO=50V +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 Complementary to 2SA1518 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector

SMD Type Transistors NPN Transistors 2SC3906K SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features High Breakdown Voltage Complementary to 2SA1514K 1 2 +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage

SMD Type Transistors NPN Transistors 2SC3913 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=500mA Collector Emitter Voltage VCEO=50V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 Complementary to 2SA1519 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector

SMD Type Transistors NPN Transistors 2SC3900 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=50V 1 2 +0.1 0.95-0.1 0.1+0.05 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collect

2SC3942(3DA3942) NPN /SILICON NPN TRANSISTOR Purpose Color TV chroma output applications. Features High V , small collector output capacitance. CEO /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 300 V CBO V

2SC3904 NPN Transistor Features SOT-89 Ideal for switching and amplification Equivalent Circuit 2.Collector 1.Base 2.Collector 3. Emitter Marking Code 1E. 1.Base 3. Emitter . Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage V 60 V CBO Collector Emitter Voltage V 40 V CEO Emitt

2SC3997T7TL Silicon NPN Power Transistor DESCRIPTION High Switching Speed High Breakdown Voltage- V = 1500V(Min) (BR)CBO APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO V Collector-Emitter Voltage 800 V CEO V Emitter-Base Voltage 6 V EBO I Collector

2SC3907T4TL Silicon NPN Power Transistor DESCRIPTION Collector-Emitter Breakdown Voltage- V = 180V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1516 APPLICATIONS Power amplifier applications Recommend for 80W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base

2SC3998T7TL Silicon NPN Power Transistor DESCRIPTION High Switching Speed High Breakdown Voltage- V = 1500V(Min) (BR)CBO APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO V Collector-Emitter Voltage 800 V CEO V Emitter-Base Voltage 6 V EBO I Collector

SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC3997 DESCRIPTION High Switching Speed High Breakdown Voltage- V = 1500V(Min) (BR)CBO APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO V Collector-Emitter Voltage 800 V CEO V Emitter-Ba

SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC3998 DESCRIPTION High Switching Speed High Breakdown Voltage- V = 1500V(Min) (BR)CBO APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO V Collector-Emitter Voltage 800 V CEO V Emitter-Ba

SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC3907 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 180V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1516 APPLICATIONS Power amplifier applications Recommend for 80W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME

isc Silicon NPN Power Transistor 2SC3973 DESCRIPTION Collector-Base Breakdown Voltage- V = 800V(Min.) (BR)CBO Wide Area of Safe Operation High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT

isc Silicon NPN Power Transistor 2SC3927 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 550V(Min) (BR)CEO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3973B DESCRIPTION With TO-220Fa package High voltage,high speed Wide area of safe operation APPLICATIONS For high voltage,high speed switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220Fa) and symbol 3 Emi

isc Silicon NPN Power Transistor 2SC3981 DESCRIPTION Collector-Base Breakdown Voltage- V = 900V(Min.) (BR)CBO Wide Area of Safe Operation High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT

isc Silicon NPN Power Transistor 2SC3996 DESCRIPTION High Switching Speed High Breakdown Voltage V = 1500V(Min) (BR)CBO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO

isc Silicon NPN Power Transistor 2SC3972 DESCRIPTION Collector-Base Breakdown Voltage- V = 800V(Min.) (BR)CBO Wide Area of Safe Operation High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3970 2SC3970A DESCRIPTION With TO-220Fa package High speed switching High VCBO Wide area of safe operation APPLICATIONS For high breakdown voltate ,high-speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitte

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3972 2SC3972A DESCRIPTION With TO-220Fa package High speed switching High VCBO Wide area of safe operation APPLICATIONS For high breakdown voltate ,high-speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitte

isc Silicon NPN Power Transistor 2SC3990 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 500V(Min) (BR)CEO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO

isc Silicon NPN Power Transistor 2SC3979 DESCRIPTION Collector-Base Breakdown Voltage- V = 900V(Min.) (BR)CBO Wide Area of Safe Operation High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3969 DESCRIPTION With TO-220C package Low collector saturation voltage High breakdown voltage Fast switching speed APPLICATIONS For high voltage switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings (Tc=25

isc Silicon NPN Power Transistor 2SC3907 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 180V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1516 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 80W high fidelity audio frequency amplifier output stage applications

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3973 2SC3973A DESCRIPTION With TO-220Fa package High breakdown voltage High speed switching Wide area of safe operation APPLICATIONS For high breakdown voltate ,high-speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and sym

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3902 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 160V(Min) (BR)CEO Large Current Capacity Complement to Type 2SA1507 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV audio output, converters, inverters. ABSOLUTE MAXIMUM

isc Silicon NPN Power Transistor 2SC3997 DESCRIPTION High Switching Speed High Breakdown Voltage- V = 1500V(Min) (BR)CBO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO

isc Product Specification isc Silicon NPN Power Transistor 2SC3993 DESCRIPTION High Switching Speed High Breakdown Voltage- V = 1100V(Min) (BR)CBO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS 800V/16A switching regulator applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltag

isc Silicon NPN Power Transistor 2SC3998 DESCRIPTION High Switching Speed High Breakdown Voltage- V = 1500V(Min) (BR)CBO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO

isc Silicon NPN Power Transistor 2SC3980 DESCRIPTION Collector-Base Breakdown Voltage- V = 900V(Min.) (BR)CBO Wide Area of Safe Operation High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT

isc Silicon NPN Power Transistor 2SC3989 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 500V(Min) (BR)CEO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO

isc Silicon NPN Power Transistor 2SC3994 DESCRIPTION High Switching Speed High Breakdown Voltage- V = 1100V(Min) (BR)CBO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1100 V CBO

isc Silicon NPN Power Transistor 2SC3969 DESCRIPTION Low Collector Saturation Voltage High Collector-Emitter Breakdown Voltage V = 400V (Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE

isc Silicon NPN Power Transistor 2SC3992 DESCRIPTION High Switching Speed High Breakdown Voltage- V = 1100V(Min) (BR)CBO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1100 V CBO

isc Silicon NPN Power Transistor 2SC3968 DESCRIPTION Low Collector Saturation Voltage High Collector-Emitter Breakdown Voltage- V = 400V (Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU

isc Silicon NPN Power Transistor 2SC3970 DESCRIPTION Collector-Base Breakdown Voltage- V = 800V(Min.) (BR)CBO Wide Area of Safe Operation High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3949 DESCRIPTION With TO-3PML package High voltage ,high speed APPLICATIONS For TV horizontal output and power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER

isc Silicon NPN Power Transistor 2SC3942 DESCRIPTION High Collector-Emitter Breakdown Voltage V = 300V(Min) (BR)CEO Good Linearity of h FE Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV chroma output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI

isc Silicon NPN Power Transistor 2SC3995 DESCRIPTION High Switching Speed High Breakdown Voltage- V = 1500V(Min) (BR)CBO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3944A DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 180V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1535A Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For low frequency driver and high power amplification. AB

isc Silicon NPN Power Transistor 2SC3944 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 150V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1535 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For low frequency driver and high power amplification. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3988 DESCRIPTION With TO-3PN package High breakdown voltage high reliability. Wide area of safe operation Fast switching speed APPLICATIONS 500V/25A switching regulator applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (

isc Silicon NPN Power Transistor 2SC3907S DESCRIPTION Collector-Emitter Breakdown Voltage- V = 180V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1516S Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 80W high fidelity audio frequency amplifier output stage applicatio

isc Silicon NPN Power Transistor 2SC3947 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 500V(Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 850

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3962 DESCRIPTION Low Collector Saturation Voltage Collector-Emitter Breakdown Voltage- V = 400V (Min) (BR)CEO Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in humidifier , DC/DC converter and general purpose applications A

isc Silicon NPN Power Transistor 2SC3975 DESCRIPTION Collector-Base Breakdown Voltage- V = 800V(Min.) (BR)CBO Wide Area of Safe Operation High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3944 2SC3944A DESCRIPTION With TO-220Fa package Complement to type 2SA1535/1535A High transition frequency APPLICATIONS For low-frequency driver and high power amplification Optimum for the driver-stage of a 60W to 100W output amplifier PINNING PIN DESCRIPTION 1 Base 2 Collector

isc Silicon NPN Power Transistor 2SC3974 DESCRIPTION Collector-Base Breakdown Voltage- V = 800V(Min.) (BR)CBO Wide Area of Safe Operation High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT

isc Silicon NPN Power Transistor 2SC3910 DESCRIPTION High Speed Switching High Collector-Base Breakdown Voltage- V = 800V(Min) (BR)CEO Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Co