2SC3900 datasheet, аналоги, основные параметры
Наименование производителя: 2SC3900 📄📄
Маркировка: SY
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.3 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 175 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 250 MHz
Ёмкость коллекторного перехода (Cc): 3.7 pf
Статический коэффициент передачи тока (hFE): 80
Корпус транзистора: TO236
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Аналоги (замена) для 2SC3900
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2SC3900 даташит
..1. Size:700K kexin
2sc3900.pdf 
SMD Type Transistors NPN Transistors 2SC3900 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=50V 1 2 +0.1 0.95-0.1 0.1+0.05 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collect
8.2. Size:61K sanyo
2sa1507 2sc3902.pdf 
Ordering number EN2101D 2SA1507 / 2SC3902 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1507 / 2SC3902 160V / 1.5A Switching Applications Applications Color TV audio output, converters, inverters. Features High breakdown voltage. Large current capacity. Adoption of FBET and MBIT process. The plastic-covered heat sink elimina
8.3. Size:53K sanyo
2sc3902.pdf 
Ordering number ENN2101C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1507/2SC3902 160V/1.5A Switching Applications Applications Package Dimensions Color TV audio output, converters, inverters. unit mm 2042B Features [2SA1507/2SC3902] 8.0 High breakdown voltage. 4.0 3.3 1.0 1.0 Large current capacity. Adoption of FBET and MBIT process. 3.0 The plastic-cove
8.4. Size:1772K rohm
2sc4102 2sc3906k.pdf 
2SC4102 / 2SC3906K Datasheet High-voltage Amplifier Transistor (120V, 50mA) lOutline l Parameter Value SOT-323 SOT-346 VCEO 120V IC 50mA 2SC4102 2SC3906K (UMT3) (SMT3) lFeatures lInner circuit l l 1)High breakdown voltage. (BVCEO=120V) 2)Complements the 2SA1579/2SA1514K.
8.5. Size:1509K rohm
2sc3906kfra.pdf 
2SC3906K FRA Datasheet High-voltage Amplifier Transistor (120V, 50mA) AEC-Q101 Qualified lOutline l SOT-346 Parameter Value SC-59 VCEO 120V IC 50mA SMT3 lFeatures lInner circuit l l 1)High breakdown voltage. (BVCEO=120V) 2)Complements the 2SA1514K FRA. lApplication l HIGH VOLTAGE AMPLIFIER lPackaging specifications l Basic Pac
8.6. Size:67K rohm
2sc4102 2sc3906k 2sc2389s.pdf 
2SC4102 / 2SC3906K / 2SC2389S Transistors High-voltage Amplifier Transistor (120V, 50mA) 2SC4102 / 2SC3906K / 2SC2389S External dimensions (Unit mm) Features 1) High breakdown voltage. (BVCEO = 120V) 2SC4102 2) Complements the 2SA1579 / 2SA1514K / 2SA1038S. 1.25 Absolute maximum ratings (Ta=25 C) 2.1 Parameter Symbol Limits Unit Collector-base voltage VCBO 120 V C
8.7. Size:57K rohm
2sc3906k.pdf 
2SC4102 / 2SC3906K / 2SC2389S Transistors High-voltage Amplifier Transistor (120V, 50mA) 2SC4102 / 2SC3906K / 2SC2389S External dimensions (Units mm) Features 1) High breakdown voltage. (BVCEO = 120V) 2SC4102 2) Complements the 2SA1579 / 2SA1514K / 2SA1038S. 1.25 2.1 Absolute maximum ratings (Ta=25 C) Parameter Symbol Limits Unit Collector-base voltage VCBO 120 V Collector-
8.8. Size:37K panasonic
2sc3904.pdf 
Transistor 2SC3904 Silicon NPN epitaxial planer type For 2GHz band low-noise amplification Unit mm +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features High transition frequency fT. Mini type package, allowing downsizing of the equipment and 1 automatic insertion through the tape packing and the magazine 3 packing. 2 Absolute Maximum Ratings (Ta=25 C) 0.1 to 0.
8.9. Size:41K panasonic
2sc3904 e.pdf 
Transistor 2SC3904 Silicon NPN epitaxial planer type For 2GHz band low-noise amplification Unit mm +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features High transition frequency fT. Mini type package, allowing downsizing of the equipment and 1 automatic insertion through the tape packing and the magazine 3 packing. 2 Absolute Maximum Ratings (Ta=25 C) 0.1 to 0.
8.10. Size:48K wingshing
2sc3907.pdf 
2SC3907 NPN PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SA1516 ABSOLUTE MAXIMUM RATING (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 180 V Collector-Emitter Voltage VCEO 180 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC 12 A
8.11. Size:617K kexin
2sc3904.pdf 
SMD Type Transistors NPN Transistors 2SC3904 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=65mA 1 2 Collector Emitter Voltage VCEO=10V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collec
8.12. Size:1268K kexin
2sc3906k.pdf 
SMD Type Transistors NPN Transistors 2SC3906K SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features High Breakdown Voltage Complementary to 2SA1514K 1 2 +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage
8.14. Size:1283K slkor
2sc3904.pdf 
2SC3904 NPN Transistor Features SOT-89 Ideal for switching and amplification Equivalent Circuit 2.Collector 1.Base 2.Collector 3. Emitter Marking Code 1E. 1.Base 3. Emitter . Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage V 60 V CBO Collector Emitter Voltage V 40 V CEO Emitt
8.15. Size:1284K cn sps
2sc3907t4tl.pdf 
2SC3907T4TL Silicon NPN Power Transistor DESCRIPTION Collector-Emitter Breakdown Voltage- V = 180V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1516 APPLICATIONS Power amplifier applications Recommend for 80W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base
8.16. Size:177K cn sptech
2sc3907r 2sc3907o.pdf 
SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC3907 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 180V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1516 APPLICATIONS Power amplifier applications Recommend for 80W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME
8.17. Size:223K inchange semiconductor
2sc3907.pdf 
isc Silicon NPN Power Transistor 2SC3907 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 180V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1516 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 80W high fidelity audio frequency amplifier output stage applications
8.18. Size:187K inchange semiconductor
2sc3902.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3902 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 160V(Min) (BR)CEO Large Current Capacity Complement to Type 2SA1507 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV audio output, converters, inverters. ABSOLUTE MAXIMUM
8.19. Size:240K inchange semiconductor
2sc3907s.pdf 
isc Silicon NPN Power Transistor 2SC3907S DESCRIPTION Collector-Emitter Breakdown Voltage- V = 180V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1516S Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 80W high fidelity audio frequency amplifier output stage applicatio
Другие транзисторы: 2SC3896, 2SC3896A, 2SC3897, 2SC3897A, 2SC3898, 2SC3899, 2SC39, 2SC390, NJW0281G, 2SC3901, 2SC3902, 2SC3902R, 2SC3902S, 2SC3902T, 2SC3903, 2SC3904, 2SC3905
