Transistor2SC3904Silicon NPN epitaxial planer typeFor 2GHz band low-noise amplificationUnit: mm+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15FeaturesHigh transition frequency fT.Mini type package, allowing downsizing of the equipment and1automatic insertion through the tape packing and the magazine3packing.2Absolute Maximum Ratings (Ta=25C)0.1 to 0.

Transistor2SC3904Silicon NPN epitaxial planer typeFor 2GHz band low-noise amplificationUnit: mm+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15FeaturesHigh transition frequency fT.Mini type package, allowing downsizing of the equipment and1automatic insertion through the tape packing and the magazine3packing.2Absolute Maximum Ratings (Ta=25C)0.1 to 0.

SMD Type TransistorsNPN Transistors2SC3904SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13 Features Collector Current Capability IC=65mA1 2 Collector Emitter Voltage VCEO=10V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collec

2SC3904NPN TransistorFeatures SOT-89 Ideal for switching and amplificationEquivalent Circuit 2.Collector1.Base 2.Collector 3. EmitterMarking Code : 1E. 1.Base3. Emitter.Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified.Parameter Symbol Value UnitCollector Base Voltage V 60 VCBOCollector Emitter Voltage V 40 VCEOEmitt

Ordering number : EN2101D2SA1507 / 2SC3902SANYO SemiconductorsDATA SHEETPNP / NPN Epitaxial Planar Silicon Transistors2SA1507 / 2SC3902160V / 1.5A Switching ApplicationsApplications Color TV audio output, converters, inverters.Features High breakdown voltage. Large current capacity. Adoption of FBET and MBIT process. The plastic-covered heat sink elimina

Ordering number:ENN2101CPNP/NPN Epitaxial Planar Silicon Transistors2SA1507/2SC3902160V/1.5A Switching ApplicationsApplications Package Dimensions Color TV audio output, converters, inverters. unit:mm2042BFeatures [2SA1507/2SC3902]8.0 High breakdown voltage.4.03.31.0 1.0 Large current capacity. Adoption of FBET and MBIT process.3.0 The plastic-cove

2SC4102 / 2SC3906KDatasheetHigh-voltage Amplifier Transistor (120V, 50mA)lOutlinelParameter Value SOT-323 SOT-346VCEO120VIC50mA 2SC4102 2SC3906K(UMT3) (SMT3) lFeatures lInner circuitl l1)High breakdown voltage. (BVCEO=120V)2)Complements the 2SA1579/2SA1514K.

2SC3906K FRADatasheetHigh-voltage Amplifier Transistor (120V, 50mA)AEC-Q101 QualifiedlOutlinel SOT-346 Parameter Value SC-59 VCEO120VIC50mASMT3lFeatures lInner circuitl l1)High breakdown voltage. (BVCEO=120V)2)Complements the 2SA1514K FRA.lApplicationlHIGH VOLTAGE AMPLIFIERlPackaging specificationslBasicPac

2SC4102 / 2SC3906K / 2SC2389S Transistors High-voltage Amplifier Transistor (120V, 50mA) 2SC4102 / 2SC3906K / 2SC2389S External dimensions (Unit : mm) Features 1) High breakdown voltage. (BVCEO = 120V) 2SC41022) Complements the 2SA1579 / 2SA1514K / 2SA1038S. 1.25 Absolute maximum ratings (Ta=25C) 2.1Parameter Symbol Limits UnitCollector-base voltage VCBO 120 VC

2SC4102 / 2SC3906K / 2SC2389STransistorsHigh-voltage Amplifier Transistor(120V, 50mA)2SC4102 / 2SC3906K / 2SC2389S External dimensions (Units : mm) Features1) High breakdown voltage. (BVCEO = 120V)2SC41022) Complements the 2SA1579 / 2SA1514K / 2SA1038S.1.252.1 Absolute maximum ratings (Ta=25C)Parameter Symbol Limits UnitCollector-base voltage VCBO 120 VCollector-

2SC3907 NPN PLANAR SILICON TRANSISTORAUDIO POWER AMPLIFIERDC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SA1516 ABSOLUTE MAXIMUM RATING (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 180 V Collector-Emitter Voltage VCEO 180 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC 12 A

SMD Type TransistorsNPN Transistors2SC3906KSOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features High Breakdown Voltage Complementary to 2SA1514K1 2+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage

SMD Type TransistorsNPN Transistors2SC3900SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=50V1 2+0.10.95-0.1 0.1+0.05-0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collect

2SC3902(3DA3902) NPN /SILICON NPN TRANSISTOR :, Purpose: Color TV audio output, converters, inverters. 2SA1507(3CA1507) Features: High V , Large I , complementary to 2SA1507(3CA1507). CEOC/Absolute maximum ratings(Ta=25)

2SC3907T4TLSilicon NPN Power TransistorDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 180V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1516APPLICATIONSPower amplifier applicationsRecommend for 80W high fidelity audio frequencyamplifier output stage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC3907DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 180V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1516APPLICATIONSPower amplifier applicationsRecommend for 80W high fidelity audio frequencyamplifier output stage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

isc Silicon NPN Power Transistor 2SC3907DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 180V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1516Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 80W high fidelity audio frequencyamplifier output stage applications

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3902DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 160V(Min)(BR)CEOLarge Current CapacityComplement to Type 2SA1507100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV audio output, converters, inverters.ABSOLUTE MAXIMUM

isc Silicon NPN Power Transistor 2SC3907SDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 180V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1516SMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 80W high fidelity audio frequencyamplifier output stage applicatio