2SC3912 - описание и поиск аналогов

Ordering number ENN2159B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1518/2SC3912 Switching Applications (With Bias Resistance) Application Package Dimensions Switching circuits, inverters circuits, inferface unit mm circuits, driver circuits. 2018B [2SA1518/2SC3912] Features 0.4 On-chip bias resistance R1=10k , R2=10k . 0.16 3 Small-sized package CP. 0

SMD Type Transistors NPN Transistors 2SC3912 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=500mA 1 2 Collector Emitter Voltage VCEO=50V +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 Complementary to 2SA1518 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector

Ordering number ENN2162B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1522/2SC3916 Switching Applications (with Bias Resistance) Applications Package Dimensions Switching circuits, inverter circuits, interface circuits, unit mm driver circuits. 2033A [2SA1522/2SC3916] 2.2 4.0 Features On-chip bias resistance R1=10k , R2=10k . Small-sized package SPA. 0.4

Ordering number ENN2163B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1523/2SC3917 Switching Applications (with Bias Resistance) Applications Package Dimensions Switching circuits, inverter circuits, interface circuits, unit mm driver circuits. 2033A [2SA1523/2SC3917] 2.2 Features 4.0 On-chip bias resistance R1=4.7k , R2=4.7k . Small-sized package SPA. 0.4

Ordering number ENN2160B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1519/2SC3913 Switching Applications (with Bias Resistance) Applications Package Dimensions Switching circuits, inverter circuits, interface circuits, unit mm driver circuits. 2018B [2SA1519/2SC3913] Features 0.4 On-chip bias resistance R1=4.7k , R2=4.7k . 0.16 3 Small-sized package CP.

Ordering number ENN2166A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1521/2SC3915 Switching Applications (with Bias Resistance) Applications Package Dimensions Swicthing circuits, inverter circuits, interface circuits, unit mm dirver circuits. 2018B [2SA1521/2SC3915] Features 0.4 On-chip bias resistance R1=2.2k , R2=2.2k . 0.16 3 Small-sized package CP.

Ordering number ENN2149B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1525/2SC3919 Switching Applications (with Bias Resistance) Applications Package Dimensions Switching circuits, inverter circuits, interface circuits, unit mm driver circuits. 2033A [2SA1525/2SC3919] 2.2 4.0 Features On-chip bias resistance R1=2.2k , R2=2.2k . Small-sized package SPA. 0.

Ordering number ENN2161B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1520/2SC3914 Switching Applications (with Bias Resistance) Applications Package Dimensions Switching circuits, inverter circuits, interface circuits, unit mm driver circuits. 2018B [2SA1520/2SC3914] Features 0.4 On-chip bias resistance R1=2.2k , R2=10k . 0.16 3 Small-sized package CP. 0

Ordering number ENN2164B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1524/2SC3918 Switching Applications (with Bias Resistance) Applications Package Dimensions Switching circuits, inverter circuits, interface circuits, unit mm driver circuits. 2033A [2SA1524/2SC3918] 2.2 4.0 Features On-chip bias resistance R1=2.2k , R2=10k . Small-sized package SPA. 0.4

SMD Type Transistors NPN Transistors 2SC3915 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=500mA 1 2 Collector Emitter Voltage VCEO=50V +0.1 +0.05 0.95-0.1 0.1-0.01 Complementary to 2SA1521 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector -

SMD Type Transistors NPN Transistors 2SC3914 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=500mA 1 2 Collector Emitter Voltage VCEO=50V +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 Complementary to 2SA1520 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector

SMD Type Transistors NPN Transistors 2SC3913 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=500mA Collector Emitter Voltage VCEO=50V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 Complementary to 2SA1519 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector

isc Silicon NPN Power Transistor 2SC3910 DESCRIPTION High Speed Switching High Collector-Base Breakdown Voltage- V = 800V(Min) (BR)CEO Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Co