Ordering number:ENN2163BPNP/NPN Epitaxial Planar Silicon Transistors2SA1523/2SC3917Switching Applications (with Bias Resistance)Applications Package Dimensions Switching circuits, inverter circuits, interface circuits,unit:mmdriver circuits.2033A[2SA1523/2SC3917]2.2Features 4.0 On-chip bias resistance : R1=4.7k , R2=4.7k . Small-sized package : SPA.0.4

Ordering number:ENN2162BPNP/NPN Epitaxial Planar Silicon Transistors2SA1522/2SC3916Switching Applications (with Bias Resistance)Applications Package Dimensions Switching circuits, inverter circuits, interface circuits,unit:mmdriver circuits.2033A[2SA1522/2SC3916]2.24.0Features On-chip bias resistance : R1=10k , R2=10k . Small-sized package : SPA.0.4

Ordering number:ENN2159BPNP/NPN Epitaxial Planar Silicon Transistors2SA1518/2SC3912Switching Applications (With Bias Resistance)Application Package Dimensions Switching circuits, inverters circuits, inferfaceunit:mmcircuits, driver circuits.2018B[2SA1518/2SC3912]Features0.4 On-chip bias resistance : R1=10k , R2=10k . 0.163 Small-sized package : CP.0

Ordering number:ENN2160BPNP/NPN Epitaxial Planar Silicon Transistors2SA1519/2SC3913Switching Applications (with Bias Resistance)Applications Package Dimensions Switching circuits, inverter circuits, interface circuits,unit:mmdriver circuits.2018B[2SA1519/2SC3913]Features0.4 On-chip bias resistance : R1=4.7k , R2=4.7k . 0.163 Small-sized package : CP.

Ordering number:ENN2166APNP/NPN Epitaxial Planar Silicon Transistors2SA1521/2SC3915Switching Applications (with Bias Resistance)Applications Package Dimensions Swicthing circuits, inverter circuits, interface circuits,unit:mmdirver circuits.2018B[2SA1521/2SC3915]Features0.4 On-chip bias resistance : R1=2.2k , R2=2.2k . 0.163 Small-sized package : CP.

Ordering number:ENN2149BPNP/NPN Epitaxial Planar Silicon Transistors2SA1525/2SC3919Switching Applications (with Bias Resistance)Applications Package Dimensions Switching circuits, inverter circuits, interface circuits,unit:mmdriver circuits.2033A[2SA1525/2SC3919]2.24.0Features On-chip bias resistance : R1=2.2k , R2=2.2k . Small-sized package : SPA.0.

Ordering number:ENN2161BPNP/NPN Epitaxial Planar Silicon Transistors2SA1520/2SC3914Switching Applications (with Bias Resistance)Applications Package Dimensions Switching circuits, inverter circuits, interface circuits,unit:mmdriver circuits.2018B[2SA1520/2SC3914]Features0.4 On-chip bias resistance : R1=2.2k , R2=10k . 0.163 Small-sized package : CP.0

Ordering number:ENN2164BPNP/NPN Epitaxial Planar Silicon Transistors2SA1524/2SC3918Switching Applications (with Bias Resistance)Applications Package Dimensions Switching circuits, inverter circuits, interface circuits,unit:mmdriver circuits.2033A[2SA1524/2SC3918]2.24.0Features On-chip bias resistance : R1=2.2k , R2=10k . Small-sized package : SPA.0.4

SMD Type TransistorsNPN Transistors2SC3915SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=500mA1 2 Collector Emitter Voltage VCEO=50V+0.1+0.050.95-0.1 0.1-0.01 Complementary to 2SA1521 +0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector -

SMD Type TransistorsNPN Transistors2SC3914SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=500mA1 2 Collector Emitter Voltage VCEO=50V+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.1 Complementary to 2SA15201.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector

SMD Type TransistorsNPN Transistors2SC3912SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=500mA1 2 Collector Emitter Voltage VCEO=50V+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.1 Complementary to 2SA15181.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector

SMD Type TransistorsNPN Transistors2SC3913SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13 Features Collector Current Capability IC=500mA Collector Emitter Voltage VCEO=50V1 2+0.1+0.050.95 -0.1 0.1 -0.01 Complementary to 2SA1519+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector

isc Silicon NPN Power Transistor 2SC3910DESCRIPTIONHigh Speed SwitchingHigh Collector-Base Breakdown Voltage-: V = 800V(Min)(BR)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Co