2SC3926 - описание и поиск аналогов

Ordering number ENN2150B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1526/2SC3920 Switching Applications (with Bias Resistance) Applications Package Dimensions Switching circuits, inverter circuits, interface circuits, unit mm driver circuits. 2003B [2SA1526/2SC3920] 5.0 Features 4.0 4.0 On-chip bias resistance R1=10k , R2=10k . Large current capacity IC

Ordering number ENN2151C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1527/2SC3921 Switching Applications (with Bias Resistance) Applications Package Dimensions Switching circuits, inverter circuits, interface circuits, unit mm driver circuits. 2003B [2SA1527/2SC3921] 5.0 Features 4.0 4.0 On-chip bias resistance R1=4.7k , R2=4.7k . Large current capacity

Ordering number ENN2152B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1528/2SC3922 Switching Applications (with Bias Resistance) Applications Package Dimensions Switching circuits, inverter circuits, interface circuits, unit mm dirver circuits. 2003B [2SA1528/2SC3922] 5.0 Features 4.0 4.0 On-chip bias resistance R1=2.2K , R2=10k . Large current capacity I

Ordering number ENN2153B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1529/2SC3923 Switching Applications (with Bias Resistance) Applications Package Dimensions Switching circuits, inverter circuits, interface circuits, unit mm driver circuits. 2003B [2SA1529/2SC3923] 5.0 Features 4.0 4.0 On-chip bias resistance R1=2.2k , R2=2.2k . Large current capacity

Transistor 2SC3929, 2SC3929A Silicon NPN epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SA1531 and 2SA1531A Features 2.1 0.1 Low noise voltage NV. 0.425 1.25 0.1 0.425 High foward current transfer ratio hFE. S-Mini type package, allowing downsizing of the equipment and 1 automatic insertion through the tape packing and the magazine p

Transistor 2SC3929, 2SC3929A Silicon NPN epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SA1531 and 2SA1531A Features 2.1 0.1 Low noise voltage NV. 0.425 1.25 0.1 0.425 High foward current transfer ratio hFE. S-Mini type package, allowing downsizing of the equipment and 1 automatic insertion through the tape packing and the magazine p

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with

2SC3927 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application Switching Regulator and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions MT-100(TO3P) Symbol 2SC3927 Unit Symbol Conditions 2SC3927 Unit 0.2 4.8 0.4 15.6 VCBO 900 V A 0.1 ICBO VCB=800V 100max 9.6 2.0 VCEO 550

2SC3928A SOT-23-3L Transistor(NPN) SOT-23-3L 1. BASE 2.92 2. EMITTER 0.35 1.17 3. COLLECTOR Features 2.80 1.60 Excellent hFE Linearity of DC forward current gain small collector to emitter saturation voltage 0.15 supper mini package easy mounting 1.90 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value U

SMD Type Transistors NPN Transistors 2SC3928A SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=200mA Collector Emitter Voltage VCEO=50V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Coll

SMD Type Transistors NPN Transistors 2SC3929A Features Low noise voltage NV. High foward current transfer ratio hFE. Complementary to 2SA1531A 1 Base 2 Emitter 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 55 Collector - Emitter Voltage VCEO 55 V Emitter - Base Voltage VEBO 5 Collector Current

isc Silicon NPN Power Transistor 2SC3927 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 550V(Min) (BR)CEO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER