2SC3926 - Даташиты. Аналоги. Основные параметры

Ordering number:ENN2150BPNP/NPN Epitaxial Planar Silicon Transistors2SA1526/2SC3920Switching Applications (with Bias Resistance)Applications Package Dimensions Switching circuits, inverter circuits, interface circuits,unit:mmdriver circuits.2003B[2SA1526/2SC3920]5.0Features4.04.0 On-chip bias resistance : R1=10k , R2=10k . Large current capacity : IC

Ordering number:ENN2151CPNP/NPN Epitaxial Planar Silicon Transistors2SA1527/2SC3921Switching Applications (with Bias Resistance)Applications Package Dimensions Switching circuits, inverter circuits, interface circuits,unit:mmdriver circuits.2003B[2SA1527/2SC3921]5.0Features4.04.0 On-chip bias resistance : R1=4.7k , R2=4.7k . Large current capacity :

Ordering number:ENN2152BPNP/NPN Epitaxial Planar Silicon Transistors2SA1528/2SC3922Switching Applications (with Bias Resistance)Applications Package Dimensions Switching circuits, inverter circuits, interface circuits,unit:mmdirver circuits.2003B[2SA1528/2SC3922]5.0Features4.04.0 On-chip bias resistance : R1=2.2K , R2=10k . Large current capacity : I

Ordering number:ENN2153BPNP/NPN Epitaxial Planar Silicon Transistors2SA1529/2SC3923Switching Applications (with Bias Resistance)Applications Package Dimensions Switching circuits, inverter circuits, interface circuits,unit:mmdriver circuits.2003B[2SA1529/2SC3923]5.0Features4.04.0 On-chip bias resistance : R1=2.2k , R2=2.2k . Large current capacity :

Transistor2SC3929, 2SC3929ASilicon NPN epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SA1531 and 2SA1531AFeatures2.1 0.1 Low noise voltage NV.0.425 1.25 0.1 0.425 High foward current transfer ratio hFE. S-Mini type package, allowing downsizing of the equipment and1automatic insertion through the tape packing and the magazinep

Transistor2SC3929, 2SC3929ASilicon NPN epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SA1531 and 2SA1531AFeatures2.1 0.1 Low noise voltage NV.0.425 1.25 0.1 0.425 High foward current transfer ratio hFE. S-Mini type package, allowing downsizing of the equipment and1automatic insertion through the tape packing and the magazinep

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2SC3927Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor)Application : Switching Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-100(TO3P)Symbol 2SC3927 Unit Symbol Conditions 2SC3927Unit0.24.80.415.6VCBO 900 V A 0.1ICBO VCB=800V 100max9.6 2.0VCEO 550

2SC3928A SOT-23-3L Transistor(NPN)SOT-23-3L1. BASE 2.922. EMITTER 0.351.173. COLLECTOR Features2.80 1.60 Excellent hFE Linearity of DC forward current gain small collector to emitter saturation voltage 0.15supper mini package easy mounting 1.90 Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value U

SMD Type TransistorsNPN Transistors2SC3928ASOT-23Unit: mm2.9+0.1-0.1+0.10.4 -0.13 Features Collector Current Capability IC=200mA Collector Emitter Voltage VCEO=50V 1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Coll

SMD Type TransistorsNPN Transistors2SC3929A Features Low noise voltage NV. High foward current transfer ratio hFE. Complementary to 2SA1531A1 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 55 Collector - Emitter Voltage VCEO 55 V Emitter - Base Voltage VEBO 5 Collector Current

isc Silicon NPN Power Transistor 2SC3927DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 550V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER