2SC3930 datasheet, аналоги, основные параметры
Наименование производителя: 2SC3930 📄📄
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.1 W
Макcимально допустимое напряжение коллектор-база (Ucb): 30 V
Макcимальный постоянный ток коллектора (Ic): 0.03 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 250 MHz
Статический коэффициент передачи тока (hFE): 50
Корпус транзистора: TO236
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Аналоги (замена) для 2SC3930
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2SC3930 даташит
..1. Size:52K panasonic
2sc3930.pdf 
Transistor 2SC3930 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm Complementary to 2SA1532 2.1 0.1 0.425 1.25 0.1 0.425 Features Optimum for RF amplification of FM/AM radios. 1 High transition frequency fT. S-Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine 2 packing. Ab
..2. Size:55K panasonic
2sc3930 e.pdf 
Transistor 2SC3930 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm Complementary to 2SA1532 2.1 0.1 0.425 1.25 0.1 0.425 Features Optimum for RF amplification of FM/AM radios. 1 High transition frequency fT. S-Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine 2 packing. Ab
..3. Size:185K secos
2sc3930.pdf 
2SC3930 0.03A , 30V NPN Silicon Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURE SOT-323 For high-frequency Amplification Complementary A L to 2SA1532 3 3 Optimum for RF amplification of FM/AM radios Top View C B High transition frequency fT 1 1 2 2 K E D CLASSIFI
..4. Size:840K htsemi
2sc3930.pdf 
2SC3930 TRANSISTOR (NPN) SOT-323 FEATURES For high-frequency Amplification Complementary to 2SA1532 Optimum for RF amplification of FM/AM radios High transition frequency fT 1.BASE 2.EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.COLLECTOR Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Bas
..5. Size:1121K kexin
2sc3930.pdf 
SMD Type Transistors NPN Transistors 2SC3930 Features Optimum for RF amplification of FM/AM radios. High transition frequency fT. Complementary to 2SA1532 1 Base 2 Emitter 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 20 V Emitter - Base Voltage VEBO 5 Colle
8.1. Size:60K panasonic
2sc3931 e.pdf 
Transistor 2SC3931 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm 2.1 0.1 0.425 1.25 0.1 0.425 Features Optimum for RF amplification of FM/AM radios. 1 High transition frequency fT. S-Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine 2 packing. Absolute Maximum Ratings (Ta
8.2. Size:36K panasonic
2sc3935.pdf 
Transistor 2SC3935 Silicon NPN epitaxial planer type For high-frequency amplification/oscillation/mixing Unit mm 2.1 0.1 0.425 1.25 0.1 0.425 Features High transition frequency fT. 1 Small collector output capacitance Cob and common base reverse transfer capacitance Crb. 3 S-Mini type package, allowing downsizing of the equipment and 2 automatic insertion through the tape p
8.3. Size:74K panasonic
2sc3932.pdf 
Transistors 2SC3932 Silicon NPN epitaxial planer type Unit mm For high-frequency amplification / oscillation / mixing 0.3+0.1 0.15+0.10 0.05 0.0 3 Features High transition frequency fT 1 2 S-mini type package, allowing downsizing of the equipment and (0.65) (0.65) automatic insertion through the tape packing and the magazine 1.3 0.1 2.0 0.2 packing. 10 Abs
8.4. Size:59K panasonic
2sc3936 e.pdf 
Transistor 2SC3936 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm 2.1 0.1 0.425 1.25 0.1 0.425 Features Optimum for RF amplification, oscillation, mixing, and IF of FM/ AM radios. 1 S-Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine 2 packing. Absolute Maximum Ratings (Ta=2
8.5. Size:40K panasonic
2sc3935 e.pdf 
Transistor 2SC3935 Silicon NPN epitaxial planer type For high-frequency amplification/oscillation/mixing Unit mm 2.1 0.1 0.425 1.25 0.1 0.425 Features High transition frequency fT. 1 Small collector output capacitance Cob and common base reverse transfer capacitance Crb. 3 S-Mini type package, allowing downsizing of the equipment and 2 automatic insertion through the tape p
8.6. Size:47K panasonic
2sc3939.pdf 
Transistor 2SC3939 Silicon NPN epitaxial planer type For low-frequency driver amplification Unit mm Complementary to 2SA1533 5.0 0.2 4.0 0.2 Features High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier. Allowing supply with the radial taping. 0.7 0.1 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratin
8.7. Size:37K panasonic
2sc3937.pdf 
Transistor 2SC3937 Silicon NPN epitaxial planer type For UHF band low-noise amplification Unit mm 2.1 0.1 0.425 1.25 0.1 0.425 Features Low noise figure NF. 1 High gain. High transition frequency fT. 3 S-Mini type package, allowing downsizing of the equipment and 2 automatic insertion through the tape packing and the magazine packing. Absolute Maximum Ratings (Ta=25 C)
8.8. Size:55K panasonic
2sc3936.pdf 
Transistor 2SC3936 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm 2.1 0.1 0.425 1.25 0.1 0.425 Features Optimum for RF amplification, oscillation, mixing, and IF of FM/ AM radios. 1 S-Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine 2 packing. Absolute Maximum Ratings (Ta=2
8.9. Size:50K panasonic
2sc3934 e.pdf 
Transistor 2SC3934 Silicon NPN epitaxial planer type For high-frequency wide-band low-noise amplification Unit mm 2.1 0.1 0.425 1.25 0.1 0.425 Features High transition frequency fT. 1 S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 3 packing. 2 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol R
8.10. Size:40K panasonic
2sc3937 e.pdf 
Transistor 2SC3937 Silicon NPN epitaxial planer type For UHF band low-noise amplification Unit mm 2.1 0.1 0.425 1.25 0.1 0.425 Features Low noise figure NF. 1 High gain. High transition frequency fT. 3 S-Mini type package, allowing downsizing of the equipment and 2 automatic insertion through the tape packing and the magazine packing. Absolute Maximum Ratings (Ta=25 C)
8.11. Size:46K panasonic
2sc3938 e.pdf 
Transistor 2SC3938 Silicon NPN epitaxial planer type For high speed switching Unit mm 2.1 0.1 0.425 1.25 0.1 0.425 Features High-speed switching. 1 Low collector to emitter saturation voltage VCE(sat). S-Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine 2 packing. Allowing pair use with 2SA1739. Abso
8.12. Size:46K panasonic
2sc3934.pdf 
Transistor 2SC3934 Silicon NPN epitaxial planer type For high-frequency wide-band low-noise amplification Unit mm 2.1 0.1 0.425 1.25 0.1 0.425 Features High transition frequency fT. 1 S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 3 packing. 2 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol R
8.13. Size:52K panasonic
2sc3933 e.pdf 
Transistor 2SC3933 Silicon NPN planer type For UHF amplification/mixing Unit mm 2.1 0.1 0.425 1.25 0.1 0.425 Features High power gain PG. 1 High transition frequency fT. S-Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine 2 packing. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit
8.14. Size:57K panasonic
2sc3932 e.pdf 
Transistor 2SC3932 Silicon NPN epitaxial planer type For high-frequency amplification/oscillation/mixing Unit mm 2.1 0.1 0.425 1.25 0.1 0.425 Features High transition frequency fT. 1 S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 3 packing. 2 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ra
8.15. Size:56K panasonic
2sc3931.pdf 
Transistor 2SC3931 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm 2.1 0.1 0.425 1.25 0.1 0.425 Features Optimum for RF amplification of FM/AM radios. 1 High transition frequency fT. S-Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine 2 packing. Absolute Maximum Ratings (Ta
8.16. Size:51K panasonic
2sc3939 e.pdf 
Transistor 2SC3939 Silicon NPN epitaxial planer type For low-frequency driver amplification Unit mm Complementary to 2SA1533 5.0 0.2 4.0 0.2 Features High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier. Allowing supply with the radial taping. 0.7 0.1 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratin
8.17. Size:42K panasonic
2sc3938.pdf 
Transistor 2SC3938 Silicon NPN epitaxial planer type For high speed switching Unit mm 2.1 0.1 0.425 1.25 0.1 0.425 Features High-speed switching. 1 Low collector to emitter saturation voltage VCE(sat). S-Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine 2 packing. Allowing pair use with 2SA1739. Abso
Другие транзисторы: 2SC3925, 2SC3926, 2SC3927, 2SC3928, 2SC3929, 2SC3929A, 2SC392A, 2SC393, BC548, 2SC3931, 2SC3932, 2SC3933, 2SC3934, 2SC3935, 2SC3936, 2SC3937, 2SC3938
