Transistor2SC3930Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SA15322.1 0.10.425 1.25 0.1 0.425FeaturesOptimum for RF amplification of FM/AM radios. 1High transition frequency fT.S-Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazine2packing.Ab

Transistor2SC3930Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SA15322.1 0.10.425 1.25 0.1 0.425FeaturesOptimum for RF amplification of FM/AM radios. 1High transition frequency fT.S-Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazine2packing.Ab

2SC3930 0.03A , 30V NPN Silicon Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURE SOT-323 For high-frequency Amplification Complementary ALto 2SA1532 33 Optimum for RF amplification of FM/AM radios Top View C B High transition frequency fT 11 22K EDCLASSIFI

2SC3930TRANSISTOR (NPN)SOT-323 FEATURES For high-frequency Amplification Complementary to 2SA1532 Optimum for RF amplification of FM/AM radios High transition frequency fT 1.BASE 2.EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.COLLECTOR Symbol Parameter Value UnitsVCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Bas

SMD Type TransistorsNPN Transistors2SC3930 Features Optimum for RF amplification of FM/AM radios. High transition frequency fT. Complementary to 2SA15321 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 20 V Emitter - Base Voltage VEBO 5 Colle

Transistor2SC3931Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm2.1 0.10.425 1.25 0.1 0.425FeaturesOptimum for RF amplification of FM/AM radios. 1High transition frequency fT.S-Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazine2packing.Absolute Maximum Ratings (Ta

Transistor2SC3935Silicon NPN epitaxial planer typeFor high-frequency amplification/oscillation/mixingUnit: mm2.1 0.10.425 1.25 0.1 0.425FeaturesHigh transition frequency fT. 1Small collector output capacitance Cob and common base reversetransfer capacitance Crb.3S-Mini type package, allowing downsizing of the equipment and2automatic insertion through the tape p

Transistors2SC3932Silicon NPN epitaxial planer typeUnit: mmFor high-frequency amplification / oscillation / mixing0.3+0.1 0.15+0.100.050.03 Features High transition frequency fT 1 2 S-mini type package, allowing downsizing of the equipment and(0.65) (0.65)automatic insertion through the tape packing and the magazine1.30.12.00.2packing.10 Abs

Transistor2SC3936Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm2.1 0.10.425 1.25 0.1 0.425FeaturesOptimum for RF amplification, oscillation, mixing, and IF of FM/AM radios. 1S-Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazine2packing.Absolute Maximum Ratings (Ta=2

Transistor2SC3935Silicon NPN epitaxial planer typeFor high-frequency amplification/oscillation/mixingUnit: mm2.1 0.10.425 1.25 0.1 0.425FeaturesHigh transition frequency fT. 1Small collector output capacitance Cob and common base reversetransfer capacitance Crb.3S-Mini type package, allowing downsizing of the equipment and2automatic insertion through the tape p

Transistor2SC3939Silicon NPN epitaxial planer typeFor low-frequency driver amplificationUnit: mmComplementary to 2SA15335.0 0.2 4.0 0.2FeaturesHigh collector to emitter voltage VCEO.Optimum for the driver stage of a low-frequency and 25 to 30Woutput amplifier.Allowing supply with the radial taping.0.7 0.1Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratin

Transistor2SC3937Silicon NPN epitaxial planer typeFor UHF band low-noise amplificationUnit: mm2.1 0.10.425 1.25 0.1 0.425FeaturesLow noise figure NF. 1High gain.High transition frequency fT.3S-Mini type package, allowing downsizing of the equipment and2automatic insertion through the tape packing and the magazinepacking.Absolute Maximum Ratings (Ta=25C)

Transistor2SC3936Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm2.1 0.10.425 1.25 0.1 0.425FeaturesOptimum for RF amplification, oscillation, mixing, and IF of FM/AM radios. 1S-Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazine2packing.Absolute Maximum Ratings (Ta=2

Transistor2SC3934Silicon NPN epitaxial planer typeFor high-frequency wide-band low-noise amplificationUnit: mm2.1 0.10.425 1.25 0.1 0.425FeaturesHigh transition frequency fT. 1S-Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazine3packing.2Absolute Maximum Ratings (Ta=25C)Parameter Symbol R

Transistor2SC3937Silicon NPN epitaxial planer typeFor UHF band low-noise amplificationUnit: mm2.1 0.10.425 1.25 0.1 0.425FeaturesLow noise figure NF. 1High gain.High transition frequency fT.3S-Mini type package, allowing downsizing of the equipment and2automatic insertion through the tape packing and the magazinepacking.Absolute Maximum Ratings (Ta=25C)

Transistor2SC3938Silicon NPN epitaxial planer typeFor high speed switchingUnit: mm2.1 0.10.425 1.25 0.1 0.425FeaturesHigh-speed switching.1Low collector to emitter saturation voltage VCE(sat).S-Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazine2packing.Allowing pair use with 2SA1739.Abso

Transistor2SC3934Silicon NPN epitaxial planer typeFor high-frequency wide-band low-noise amplificationUnit: mm2.1 0.10.425 1.25 0.1 0.425FeaturesHigh transition frequency fT. 1S-Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazine3packing.2Absolute Maximum Ratings (Ta=25C)Parameter Symbol R

Transistor2SC3933Silicon NPN planer typeFor UHF amplification/mixingUnit: mm2.1 0.10.425 1.25 0.1 0.425FeaturesHigh power gain PG. 1High transition frequency fT.S-Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazine2packing.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit

Transistor2SC3932Silicon NPN epitaxial planer typeFor high-frequency amplification/oscillation/mixingUnit: mm2.1 0.10.425 1.25 0.1 0.425FeaturesHigh transition frequency fT. 1S-Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazine3packing.2Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ra

Transistor2SC3931Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm2.1 0.10.425 1.25 0.1 0.425FeaturesOptimum for RF amplification of FM/AM radios. 1High transition frequency fT.S-Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazine2packing.Absolute Maximum Ratings (Ta

Transistor2SC3939Silicon NPN epitaxial planer typeFor low-frequency driver amplificationUnit: mmComplementary to 2SA15335.0 0.2 4.0 0.2FeaturesHigh collector to emitter voltage VCEO.Optimum for the driver stage of a low-frequency and 25 to 30Woutput amplifier.Allowing supply with the radial taping.0.7 0.1Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratin

Transistor2SC3938Silicon NPN epitaxial planer typeFor high speed switchingUnit: mm2.1 0.10.425 1.25 0.1 0.425FeaturesHigh-speed switching.1Low collector to emitter saturation voltage VCE(sat).S-Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazine2packing.Allowing pair use with 2SA1739.Abso