Power Transistors2SC3942Silicon NPN triple diffusion planar typeFor color TV chroma outputUnit: mm10.0 0.2 4.2 0.25.5 0.2 2.7 0.2FeaturesHigh collector to emitter VCEO 3.1 0.1Small collector output capacitance CobFull-pack package which can be installed to the heat sink withone screw1.3 0.21.4 0.1+0.2Absolute Maximum Ratings (TC=25C)0.5 0.1

2SC3942(3DA3942) NPN /SILICON NPN TRANSISTOR : Purpose: Color TV chroma output applications. : Features: High V , small collector output capacitance. CEO/Absolute maximum ratings(Ta=25) Symbol Rating Unit V 300 V CBO V

isc Silicon NPN Power Transistor 2SC3942DESCRIPTIONHigh Collector-Emitter Breakdown Voltage: V = 300V(Min)(BR)CEOGood Linearity of hFELow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV chroma output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI

Transistor2SC3940, 2SC3940ASilicon NPN epitaxial planer typeFor low-frequency output amplification and driver amplificationUnit: mmComplementary to 2SA1534 and 2SA1534A5.0 0.2 4.0 0.2Features Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping.0.7 0.1Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector

Transistor2SC3940, 2SC3940ASilicon NPN epitaxial planer typeFor low-frequency output amplification and driver amplificationUnit: mmComplementary to 2SA1534 and 2SA1534A5.0 0.2 4.0 0.2Features Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping.0.7 0.1Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector

Power Transistors2SC3946Silicon NPN triple diffusion planar typeFor color TV horizontal deflection driverUnit: mm10.0 0.2 4.2 0.25.5 0.2 2.7 0.2FeaturesHigh collector to emitter VCEO 3.1 0.1Large collector power dissipation PCFull-pack package which can be installed to the heat sink withone screw1.3 0.21.4 0.1+0.2Absolute Maximum Ratings (TC=25C

Power Transistors2SC3943Silicon NPN epitaxial planar typeFor video amplifierUnit: mm10.0 0.2 4.2 0.25.5 0.2 2.7 0.2FeaturesSmall transition frequency fT 3.1 0.1Small collector output capacitance CobFull-pack package which can be installed to the heat sink withone screw1.3 0.21.4 0.1+0.2Absolute Maximum Ratings (TC=25C)0.5 0.10.8 0.1Pa

Transistor2SC3941Silicon NPN triple diffusion planer typeFor high breakdown voltage general amplificationUnit: mmFor small TV video output5.0 0.2 4.0 0.2Complementary to 2SB1221FeaturesHigh collector to emitter voltage VCEO.High transition frequency fT.Allowing supply with the radial taping.0.7 0.1Absolute Maximum Ratings (Ta=25C)+0.15 +0.15Parameter Symbol

Power Transistors2SC3944, 2SC3944ASilicon NPN epitaxial planar typeFor low-frequency driver and high power amplificationComplementary to 2SA1535 and 2SA1535AUnit: mmFeatures10.0 0.2 4.2 0.2Satisfactory foward current transfer ratio hFE vs. collector cur-5.5 0.2 2.7 0.2rent IC characteristicsHigh transition frequency fTMakes up a complementary pair with 2SA1535 an

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JMnic Product Specification Silicon NPN Power Transistors 2SC3949 DESCRIPTION With TO-3PML package High voltage ,high speed APPLICATIONS For TV horizontal output and power switching applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS MAX UN

JMnic Product SpecificationSilicon NPN Power Transistors 2SC3947 DESCRIPTION With TO-3PML package High voltage ,high speed APPLICATIONS For TV horizontal output and power switching applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS MAX UNI

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3949 DESCRIPTION With TO-3PML package High voltage ,high speed APPLICATIONS For TV horizontal output and power switching applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3944ADESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 180V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1535AGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor low frequency driver and high power amplification.AB

isc Silicon NPN Power Transistor 2SC3944DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 150V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1535Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor low frequency driver and high power amplification.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

isc Silicon NPN Power Transistor 2SC3947DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 500V(Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 850

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3944 2SC3944A DESCRIPTION With TO-220Fa package Complement to type 2SA1535/1535A High transition frequency APPLICATIONS For low-frequency driver and high power amplification Optimum for the driver-stage of a 60W to 100W output amplifier PINNING PIN DESCRIPTION1 Base 2 Collector