Справочник транзисторов. 2SC3944

 

Биполярный транзистор 2SC3944 Даташит. Аналоги


   Наименование производителя: 2SC3944
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 40 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 150 V
   Макcимальный постоянный ток коллектора (Ic): 1 A
   Предельная температура PN-перехода (Tj): 125 °C
   Граничная частота коэффициента передачи тока (ft): 300 MHz
   Статический коэффициент передачи тока (hfe): 30
   Корпус транзистора: TO218
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2SC3944 Datasheet (PDF)

 ..1. Size:42K  panasonic
2sc3944.pdfpdf_icon

2SC3944

Power Transistors2SC3944, 2SC3944ASilicon NPN epitaxial planar typeFor low-frequency driver and high power amplificationComplementary to 2SA1535 and 2SA1535AUnit: mmFeatures10.0 0.2 4.2 0.2Satisfactory foward current transfer ratio hFE vs. collector cur-5.5 0.2 2.7 0.2rent IC characteristicsHigh transition frequency fTMakes up a complementary pair with 2SA1535 an

 ..2. Size:215K  inchange semiconductor
2sc3944.pdfpdf_icon

2SC3944

isc Silicon NPN Power Transistor 2SC3944DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 150V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1535Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor low frequency driver and high power amplification.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

 ..3. Size:80K  inchange semiconductor
2sc3944 2sc3944a.pdfpdf_icon

2SC3944

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3944 2SC3944A DESCRIPTION With TO-220Fa package Complement to type 2SA1535/1535A High transition frequency APPLICATIONS For low-frequency driver and high power amplification Optimum for the driver-stage of a 60W to 100W output amplifier PINNING PIN DESCRIPTION1 Base 2 Collector

 0.1. Size:210K  inchange semiconductor
2sc3944a.pdfpdf_icon

2SC3944

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3944ADESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 180V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1535AGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor low frequency driver and high power amplification.AB

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: MT3S111TU | BFG520-X | MJ2249 | HUN2241 | 3N103 | BD650F

 

 
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