Справочник транзисторов. 2SC3960

 

Биполярный транзистор 2SC3960 - описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2SC3960

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 30 W

Макcимально допустимое напряжение коллектор-база (Ucb): 150 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100 V

Макcимальный постоянный ток коллектора (Ic): 5 A

Предельная температура PN-перехода (Tj): 150 °C

Статический коэффициент передачи тока (hfe): 40

Корпус транзистора: TO218

Аналоги (замена) для 2SC3960

 

 

2SC3960 Datasheet (PDF)

4.1. 2sc3969-220.pdf Size:94K _update

2SC3960
2SC3960

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3969 DESCRIPTION ·With TO-220C package ·Low collector saturation voltage ·High breakdown voltage ·Fast switching speed APPLICATIONS ·For high voltage switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings (Tc=25

4.2. 2sc3963.pdf Size:192K _toshiba

2SC3960
2SC3960



 4.3. 2sc3964.pdf Size:213K _toshiba

2SC3960
2SC3960



4.4. 2sc3969.pdf Size:120K _rohm

2SC3960
2SC3960

Transistors High Voltage Switching Transistor (400V, 2A) 2SC3969 / 2SC5161 FFeatures FExternal dimensions (Units: mm) 1) Low VCE(sat). VCE(sat) = 0.15V (Typ.) (IC / IB = 1A / 0.2A) 2) High breakdown voltage. VCEO = 400V 3) Fast switching. tr = 1.0s (IC = 0.8A) FStructure Three-layer, diffused planar type NPN silicon transistor (96-698-C14) 236 Transistors 2SC3969 / 2SC5161 FAb

 4.5. 2sc3965 e.pdf Size:40K _panasonic

2SC3960
2SC3960

Transistor 2SC3965 Silicon NPN triple diffusion planer type For small TV video output Unit: mm 5.0 0.2 4.0 0.2 Features High collector to emitter voltage VCEO. Small collector output capacitance Cob. Allowing supply with the radial taping. 0.7 0.1 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit +0.15 +0.15 Collector to base voltage VCBO 300 V 0.45 0.1 0.45 0.1

4.6. 2sc3962.pdf Size:146K _jmnic

2SC3960
2SC3960

JMnic Product Specification Silicon NPN Power Transistors 2SC3962 DESCRIPTION · ·With TO-220C package ·High voltage ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VC

4.7. 2sc3968.pdf Size:274K _inchange_semiconductor

2SC3960
2SC3960

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3968 DESCRIPTION ·Low Collector Saturation Voltage ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V (Min) ·High Switching Speed APPLICATIONS ·Designed for switching regulator applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 4

4.8. 2sc3969.pdf Size:231K _inchange_semiconductor

2SC3960
2SC3960

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3969 DESCRIPTION ·Low Collector Saturation Voltage ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V (Min) ·High Switching Speed APPLICATIONS ·Designed for switching regulator applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 4

4.9. 2sc3962.pdf Size:116K _inchange_semiconductor

2SC3960
2SC3960

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3962 DESCRIPTION Ў¤ With TO-220C package Ў¤ High voltage Ў¤ High speed switching APPLICATIONS Ў¤ For switching regulator and general purpose applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Ў¤ Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO V

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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