Биполярный транзистор 2SC3965 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC3965
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 1 W
Макcимально допустимое напряжение коллектор-база (Ucb): 300 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 140 MHz
Статический коэффициент передачи тока (hfe): 25
Корпус транзистора: TO92
2SC3965 Datasheet (PDF)
2sc3965 e.pdf
Transistor2SC3965Silicon NPN triple diffusion planer typeFor small TV video outputUnit: mm5.0 0.2 4.0 0.2FeaturesHigh collector to emitter voltage VCEO.Small collector output capacitance Cob.Allowing supply with the radial taping.0.7 0.1Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.15 +0.15Collector to base voltage VCBO 300 V0.45 0.1 0
2sc3969.pdf
TransistorsHigh Voltage Switching Transistor(400V, 2A)2SC3969 / 2SC5161FFeatures FExternal dimensions (Units: mm)1) Low VCE(sat).VCE(sat) = 0.15V (Typ.)(IC / IB = 1A / 0.2A)2) High breakdown voltage.VCEO = 400V3) Fast switching.tr = 1.0s(IC = 0.8A)FStructureThree-layer, diffused planar typeNPN silicon transistor(96-698-C14)236Transistors 2SC3969 / 2SC5161
2sc3962.pdf
JMnic Product SpecificationSilicon NPN Power Transistors 2SC3962 DESCRIPTION With TO-220C package High voltage High speed switching APPLICATIONS For switching regulator and general purpose applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNI
2sc3969-220.pdf
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3969 DESCRIPTION With TO-220C package Low collector saturation voltage High breakdown voltage Fast switching speed APPLICATIONS For high voltage switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2mounting base 3 Emitter Absolute maximum ratings (Tc=25
2sc3969.pdf
isc Silicon NPN Power Transistor 2SC3969DESCRIPTIONLow Collector Saturation VoltageHigh Collector-Emitter Breakdown Voltage: V = 400V (Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE
2sc3968.pdf
isc Silicon NPN Power Transistor 2SC3968DESCRIPTIONLow Collector Saturation VoltageHigh Collector-Emitter Breakdown Voltage-: V = 400V (Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU
2sc3962.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3962DESCRIPTIONLow Collector Saturation VoltageCollector-Emitter Breakdown Voltage-: V = 400V (Min)(BR)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in humidifier , DC/DC converter andgeneral purpose applicationsA
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
