isc Silicon NPN Power Transistor 2SC3968DESCRIPTIONLow Collector Saturation VoltageHigh Collector-Emitter Breakdown Voltage-: V = 400V (Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU

TransistorsHigh Voltage Switching Transistor(400V, 2A)2SC3969 / 2SC5161FFeatures FExternal dimensions (Units: mm)1) Low VCE(sat).VCE(sat) = 0.15V (Typ.)(IC / IB = 1A / 0.2A)2) High breakdown voltage.VCEO = 400V3) Fast switching.tr = 1.0s(IC = 0.8A)FStructureThree-layer, diffused planar typeNPN silicon transistor(96-698-C14)236Transistors 2SC3969 / 2SC5161

Transistor2SC3965Silicon NPN triple diffusion planer typeFor small TV video outputUnit: mm5.0 0.2 4.0 0.2FeaturesHigh collector to emitter voltage VCEO.Small collector output capacitance Cob.Allowing supply with the radial taping.0.7 0.1Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.15 +0.15Collector to base voltage VCBO 300 V0.45 0.1 0

JMnic Product SpecificationSilicon NPN Power Transistors 2SC3962 DESCRIPTION With TO-220C package High voltage High speed switching APPLICATIONS For switching regulator and general purpose applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNI

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3969 DESCRIPTION With TO-220C package Low collector saturation voltage High breakdown voltage Fast switching speed APPLICATIONS For high voltage switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2mounting base 3 Emitter Absolute maximum ratings (Tc=25

isc Silicon NPN Power Transistor 2SC3969DESCRIPTIONLow Collector Saturation VoltageHigh Collector-Emitter Breakdown Voltage: V = 400V (Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3962DESCRIPTIONLow Collector Saturation VoltageCollector-Emitter Breakdown Voltage-: V = 400V (Min)(BR)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in humidifier , DC/DC converter andgeneral purpose applicationsA