Справочник транзисторов. 2SC3976

 

Биполярный транзистор 2SC3976 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SC3976
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 150 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 800 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 500 V
   Макcимальный постоянный ток коллектора (Ic): 12 A
   Предельная температура PN-перехода (Tj): 125 °C
   Статический коэффициент передачи тока (hfe): 40
   Корпус транзистора: TOP3L

 Аналоги (замена) для 2SC3976

 

 

2SC3976 Datasheet (PDF)

 ..1. Size:62K  panasonic
2sc3976.pdf

2SC3976
2SC3976

Power Transistors2SC3976Silicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm 3.3 0.220.0 0.5 5.0 0.33.0FeaturesHigh-speed switchingHigh collector to base voltage VCBOWide area of safe operation (ASO) 1.5Satisfactory linearity of foward current transfer ratio hFE1.52.0 0.3Absolute Maximum Ratings (TC=25C)2.7

 8.1. Size:60K  panasonic
2sc3973.pdf

2SC3976
2SC3976

Power Transistors2SC3973, 2SC3973ASilicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm10.0 0.2 4.2 0.2Features5.5 0.2 2.7 0.2High-speed switchingHigh collector to base voltage VCBO 3.1 0.1Wide area of safe operation (ASO)Satisfactory linearity of foward current transfer ratio hFEFull-pack package which can be insta

 8.2. Size:60K  panasonic
2sc3971.pdf

2SC3976
2SC3976

Power Transistors2SC3971, 2SC3971ASilicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm10.0 0.2 4.2 0.2Features5.5 0.2 2.7 0.2High-speed switchingHigh collector to base voltage VCBO 3.1 0.1Wide area of safe operation (ASO)Satisfactory linearity of foward current transfer ratio hFEFull-pack package which can be insta

 8.3. Size:60K  panasonic
2sc3972.pdf

2SC3976
2SC3976

Power Transistors2SC3972, 2SC3972ASilicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm10.0 0.2 4.2 0.2Features5.5 0.2 2.7 0.2High-speed switchingHigh collector to base voltage VCBO 3.1 0.1Wide area of safe operation (ASO)Satisfactory linearity of foward current transfer ratio hFEFull-pack package which can be insta

 8.4. Size:59K  panasonic
2sc3979.pdf

2SC3976
2SC3976

Power Transistors2SC3979, 2SC3979ASilicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm10.0 0.2 4.2 0.2Features5.5 0.2 2.7 0.2High-speed switchingHigh collector to base voltage VCBOWide area of safe operation (ASO) 3.1 0.1Satisfactory linearity of foward current transfer ratio hFEFull-pack package which can be insta

 8.5. Size:60K  panasonic
2sc3978.pdf

2SC3976
2SC3976

Power Transistors2SC3978, 2SC3978ASilicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm10.0 0.2 4.2 0.2Features5.5 0.2 2.7 0.2High-speed switchingHigh collector to base voltage VCBO 3.1 0.1Wide area of safe operation (ASO)Satisfactory linearity of foward current transfer ratio hFEFull-pack package which can be insta

 8.6. Size:60K  panasonic
2sc3970.pdf

2SC3976
2SC3976

Power Transistors2SC3970, 2SC3970ASilicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm10.0 0.2 4.2 0.2Features5.5 0.2 2.7 0.2High-speed switchingHigh collector to base voltage VCBO 3.1 0.1Wide area of safe operation (ASO)Satisfactory linearity of foward current transfer ratio hFEFull-pack package which can be insta

 8.7. Size:60K  panasonic
2sc3977.pdf

2SC3976
2SC3976

Power Transistors2SC3977, 2SC3977ASilicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm10.0 0.2 4.2 0.2Features5.5 0.2 2.7 0.2High-speed switchingHigh collector to base voltage VCBO 3.1 0.1Wide area of safe operation (ASO)Satisfactory linearity of foward current transfer ratio hFEFull-pack package which can be insta

 8.8. Size:59K  panasonic
2sc3975.pdf

2SC3976
2SC3976

Power Transistors2SC3975Silicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm15.0 0.3 5.0 0.2Features11.0 0.2 3.2High-speed switchingHigh collector to base voltage VCBO 3.2 0.1Wide area of safe operation (ASO)Satisfactory linearity of foward current transfer ratio hFEFull-pack package which can be installed to the hea

 8.9. Size:59K  panasonic
2sc3974.pdf

2SC3976
2SC3976

Power Transistors2SC3974Silicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm15.0 0.3 5.0 0.2Features11.0 0.2 3.2High-speed switchingHigh collector to base voltage VCBO 3.2 0.1Wide area of safe operation (ASO)Satisfactory linearity of foward current transfer ratio hFEFull-pack package which can be installed to the hea

 8.10. Size:179K  jmnic
2sc3973.pdf

2SC3976
2SC3976

JMnic Product SpecificationSilicon NPN Power Transistors 2SC3973 2SC3973A DESCRIPTION With TO-220Fa package High breakdown voltage High speed switching Wide area of safe operation APPLICATIONS For high breakdown voltate ,high-speed switching applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol3 EmitterAb

 8.11. Size:181K  jmnic
2sc3972.pdf

2SC3976
2SC3976

JMnic Product SpecificationSilicon NPN Power Transistors 2SC3972 2SC3972A DESCRIPTION With TO-220Fa package High speed switching High VCBO Wide area of safe operation APPLICATIONS For high breakdown voltate ,high-speed switching applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol3 EmitterAbsolute maximu

 8.12. Size:147K  jmnic
2sc3979.pdf

2SC3976
2SC3976

Product Specification www.jmnic.com Silicon Power Transistors 2SC3979 DESCRIPTION With TO-220Fa package High breakdown voltage High speed switching Wide area of safe operation (SOA) Full-pack package which can be installed to the heak sink with one screw PINNING PIN DESCRIPTION1 Base 2 Collector3 emitterFig.1 simplified outline (TO-220Fa) and symbol ABS

 8.13. Size:181K  jmnic
2sc3970.pdf

2SC3976
2SC3976

JMnic Product Specification Silicon NPN Power Transistors 2SC3970 2SC3970A DESCRIPTION With TO-220Fa package High speed switching High VCBO Wide area of safe operation APPLICATIONS For high breakdown voltate ,high-speed switching applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol3 EmitterAbsolute maxim

 8.14. Size:211K  inchange semiconductor
2sc3973.pdf

2SC3976
2SC3976

isc Silicon NPN Power Transistor 2SC3973DESCRIPTION Collector-Base Breakdown Voltage-: V = 800V(Min.)(BR)CBOWide Area of Safe OperationHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNIT

 8.15. Size:117K  inchange semiconductor
2sc3973b.pdf

2SC3976
2SC3976

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3973B DESCRIPTION With TO-220Fa package High voltage,high speed Wide area of safe operation APPLICATIONS For high voltage,high speed switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220Fa) and symbol3 Emi

 8.16. Size:211K  inchange semiconductor
2sc3972.pdf

2SC3976
2SC3976

isc Silicon NPN Power Transistor 2SC3972DESCRIPTION Collector-Base Breakdown Voltage-: V = 800V(Min.)(BR)CBOWide Area of Safe OperationHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNIT

 8.17. Size:144K  inchange semiconductor
2sc3970 2sc3970a.pdf

2SC3976
2SC3976

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3970 2SC3970A DESCRIPTION With TO-220Fa package High speed switching High VCBO Wide area of safe operation APPLICATIONS For high breakdown voltate ,high-speed switching applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol3 Emitte

 8.18. Size:145K  inchange semiconductor
2sc3972 2sc3972a.pdf

2SC3976
2SC3976

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3972 2SC3972A DESCRIPTION With TO-220Fa package High speed switching High VCBO Wide area of safe operation APPLICATIONS For high breakdown voltate ,high-speed switching applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol3 Emitte

 8.19. Size:212K  inchange semiconductor
2sc3979.pdf

2SC3976
2SC3976

isc Silicon NPN Power Transistor 2SC3979DESCRIPTION Collector-Base Breakdown Voltage-: V = 900V(Min.)(BR)CBOWide Area of Safe OperationHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNIT

 8.20. Size:142K  inchange semiconductor
2sc3973 2sc3973a.pdf

2SC3976
2SC3976

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3973 2SC3973A DESCRIPTION With TO-220Fa package High breakdown voltage High speed switching Wide area of safe operation APPLICATIONS For high breakdown voltate ,high-speed switching applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and sym

 8.21. Size:212K  inchange semiconductor
2sc3970.pdf

2SC3976
2SC3976

isc Silicon NPN Power Transistor 2SC3970DESCRIPTION Collector-Base Breakdown Voltage-: V = 800V(Min.)(BR)CBOWide Area of Safe OperationHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNIT

 8.22. Size:210K  inchange semiconductor
2sc3975.pdf

2SC3976
2SC3976

isc Silicon NPN Power Transistor 2SC3975DESCRIPTION Collector-Base Breakdown Voltage-: V = 800V(Min.)(BR)CBOWide Area of Safe OperationHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNIT

 8.23. Size:211K  inchange semiconductor
2sc3974.pdf

2SC3976
2SC3976

isc Silicon NPN Power Transistor 2SC3974DESCRIPTION Collector-Base Breakdown Voltage-: V = 800V(Min.)(BR)CBOWide Area of Safe OperationHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNIT

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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