Справочник транзисторов. 2SC3982

 

Биполярный транзистор 2SC3982 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SC3982
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 150 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 1000 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 800 V
   Макcимальный постоянный ток коллектора (Ic): 10 A
   Предельная температура PN-перехода (Tj): 125 °C
   Статический коэффициент передачи тока (hfe): 45
   Корпус транзистора: TO218

 Аналоги (замена) для 2SC3982

 

 

2SC3982 Datasheet (PDF)

 ..1. Size:62K  panasonic
2sc3982.pdf

2SC3982
2SC3982

Power Transistors2SC3982, 2SC3982ASilicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm 3.3 0.220.0 0.5 5.0 0.33.0FeaturesHigh-speed switchingHigh collector to base voltage VCBOWide area of safe operation (ASO) 1.5Satisfactory linearity of foward current transfer ratio hFE1.52.0 0.3Absolute Maximum Ratings (TC=2

 8.1. Size:24K  sanyo
2sc3989.pdf

2SC3982
2SC3982

Ordering number:EN2556NPN Triple Diffused Planar Silicon Transistor2SC3989500V/25A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage, high reliability.unit:mm Fast switching speed (tf=0.1 s typ).2048B Adoption of MBIT process.[2SC3989]1 : Base2 : Collector3 : EmitterSANYO : TO-3PBLSpecificationsAbsolute Maximum Ratings

 8.2. Size:114K  sanyo
2sc3988.pdf

2SC3982
2SC3982

Ordering number:EN2232BNPN Triple Diffused Planar Silicon Transistor2SC3988500V/25A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage, high reliability.unit:mm Fast switching speed.2022A Wide ASO.[2SC3988] Adoption of MBIT process.1 : Base2 : Collector3 : EmitterSANYO : TO-3PBSpecificationsAbsolute Maximum Ratings at

 8.3. Size:90K  sanyo
2sc3986.pdf

2SC3982
2SC3982

Ordering number:EN2220BNPN Planar Silicon Darlington Transistor2SC3986Driver ApplicationsApplications Package Dimensions Suitable for use in switching of L load (motorunit:mmdrivers, printer hammer drivers, relay drivers).2041A[2SC3986]Features High DC current gain. Large current capacity and wide ASO. On-chip Zener diode of 60 10V between collectorand

 8.4. Size:83K  sanyo
2sc3987.pdf

2SC3982
2SC3982

Ordering number:EN2221BNPN Planar Silicon Darlington Transistor2SC3987Driver ApplicationsApplications Package Dimensions Suitable for use in switching of L load (motorunit:mmdrivers, printer hammer drivers, relay drivers).2041A[2SC3987]Features High DC current gain. Large current capacity and wide ASO. On-chip Zener diode of 60 10V between collectorand

 8.5. Size:60K  panasonic
2sc3981.pdf

2SC3982
2SC3982

Power Transistors2SC3981, 2SC3981ASilicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mmFeatures15.0 0.3 5.0 0.2High-speed switching11.0 0.2 3.2High collector to base voltage VCBOWide area of safe operation (ASO) 3.2 0.1Satisfactory linearity of foward current transfer ratio hFEFull-pack package which can be installed

 8.6. Size:59K  panasonic
2sc3980.pdf

2SC3982
2SC3982

Power Transistors2SC3980, 2SC3980ASilicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mmFeatures15.0 0.3 5.0 0.2High-speed switching11.0 0.2 3.2High collector to base voltage VCBOWide area of safe operation (ASO) 3.2 0.1Satisfactory linearity of foward current transfer ratio hFEFull-pack package which can be installed

 8.7. Size:119K  jmnic
2sc3988.pdf

2SC3982
2SC3982

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC3988 DESCRIPTION With TO-220Fa package High breakdown voltage high reliability. Wide ASO (Safe Operating Area) Fast switching speed APPLICATIONS 500V/25A Switching Regulator Applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterFig.1 simplified ou

 8.8. Size:211K  inchange semiconductor
2sc3981.pdf

2SC3982
2SC3982

isc Silicon NPN Power Transistor 2SC3981DESCRIPTION Collector-Base Breakdown Voltage-: V = 900V(Min.)(BR)CBOWide Area of Safe OperationHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNIT

 8.9. Size:211K  inchange semiconductor
2sc3980.pdf

2SC3982
2SC3982

isc Silicon NPN Power Transistor 2SC3980DESCRIPTION Collector-Base Breakdown Voltage-: V = 900V(Min.)(BR)CBOWide Area of Safe OperationHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNIT

 8.10. Size:216K  inchange semiconductor
2sc3989.pdf

2SC3982
2SC3982

isc Silicon NPN Power Transistor 2SC3989DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 500V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO

 8.11. Size:211K  inchange semiconductor
2sc3988.pdf

2SC3982
2SC3982

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3988 DESCRIPTION With TO-3PN package High breakdown voltage high reliability. Wide area of safe operation Fast switching speed APPLICATIONS 500V/25A switching regulator applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (

Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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