2SC3984 datasheet, аналоги, основные параметры
Наименование производителя: 2SC3984 📄📄
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.3 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимальный постоянный ток коллектора (Ic): 0.45 A
Предельная температура PN-перехода (Tj): 100 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 180 MHz
Статический коэффициент передачи тока (hFE): 30
Корпус транзистора: TO92
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Аналоги (замена) для 2SC3984
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2SC3984 даташит
8.1. Size:24K sanyo
2sc3989.pdf 
Ordering number EN2556 NPN Triple Diffused Planar Silicon Transistor 2SC3989 500V/25A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high reliability. unit mm Fast switching speed (tf=0.1 s typ). 2048B Adoption of MBIT process. [2SC3989] 1 Base 2 Collector 3 Emitter SANYO TO-3PBL Specifications Absolute Maximum Ratings
8.2. Size:114K sanyo
2sc3988.pdf 
Ordering number EN2232B NPN Triple Diffused Planar Silicon Transistor 2SC3988 500V/25A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high reliability. unit mm Fast switching speed. 2022A Wide ASO. [2SC3988] Adoption of MBIT process. 1 Base 2 Collector 3 Emitter SANYO TO-3PB Specifications Absolute Maximum Ratings at
8.3. Size:90K sanyo
2sc3986.pdf 
Ordering number EN2220B NPN Planar Silicon Darlington Transistor 2SC3986 Driver Applications Applications Package Dimensions Suitable for use in switching of L load (motor unit mm drivers, printer hammer drivers, relay drivers). 2041A [2SC3986] Features High DC current gain. Large current capacity and wide ASO. On-chip Zener diode of 60 10V between collector and
8.4. Size:83K sanyo
2sc3987.pdf 
Ordering number EN2221B NPN Planar Silicon Darlington Transistor 2SC3987 Driver Applications Applications Package Dimensions Suitable for use in switching of L load (motor unit mm drivers, printer hammer drivers, relay drivers). 2041A [2SC3987] Features High DC current gain. Large current capacity and wide ASO. On-chip Zener diode of 60 10V between collector and
8.5. Size:60K panasonic
2sc3981.pdf 
Power Transistors 2SC3981, 2SC3981A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm Features 15.0 0.3 5.0 0.2 High-speed switching 11.0 0.2 3.2 High collector to base voltage VCBO Wide area of safe operation (ASO) 3.2 0.1 Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed
8.6. Size:62K panasonic
2sc3982.pdf 
Power Transistors 2SC3982, 2SC3982A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 3.3 0.2 20.0 0.5 5.0 0.3 3.0 Features High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) 1.5 Satisfactory linearity of foward current transfer ratio hFE 1.5 2.0 0.3 Absolute Maximum Ratings (TC=2
8.7. Size:59K panasonic
2sc3980.pdf 
Power Transistors 2SC3980, 2SC3980A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm Features 15.0 0.3 5.0 0.2 High-speed switching 11.0 0.2 3.2 High collector to base voltage VCBO Wide area of safe operation (ASO) 3.2 0.1 Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed
8.8. Size:119K jmnic
2sc3988.pdf 
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC3988 DESCRIPTION With TO-220Fa package High breakdown voltage high reliability. Wide ASO (Safe Operating Area) Fast switching speed APPLICATIONS 500V/25A Switching Regulator Applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified ou
8.9. Size:211K inchange semiconductor
2sc3981.pdf 
isc Silicon NPN Power Transistor 2SC3981 DESCRIPTION Collector-Base Breakdown Voltage- V = 900V(Min.) (BR)CBO Wide Area of Safe Operation High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT
8.10. Size:211K inchange semiconductor
2sc3980.pdf 
isc Silicon NPN Power Transistor 2SC3980 DESCRIPTION Collector-Base Breakdown Voltage- V = 900V(Min.) (BR)CBO Wide Area of Safe Operation High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT
8.11. Size:216K inchange semiconductor
2sc3989.pdf 
isc Silicon NPN Power Transistor 2SC3989 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 500V(Min) (BR)CEO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO
8.12. Size:211K inchange semiconductor
2sc3988.pdf 
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3988 DESCRIPTION With TO-3PN package High breakdown voltage high reliability. Wide area of safe operation Fast switching speed APPLICATIONS 500V/25A switching regulator applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (
Другие транзисторы: 2SC3978, 2SC3979, 2SC397D, 2SC398, 2SC3980, 2SC3981, 2SC3982, 2SC3983, BC639, 2SC3985, 2SC3986, 2SC3987, 2SC3988, 2SC3988L, 2SC3988M, 2SC3988N, 2SC3989
